TFBGA Flash Memory 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

MTFC16GAPALBH-IT

Micron Technology

FLASH CARD

INDUSTRIAL

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

17179869184 words

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA153,14X14,20

.5 mm

85 Cel

3-STATE

16GX8

16G

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B153

3.6 V

1.1 mm

200 MHz

11.5 mm

137438953472 bit

2.7 V

e1

30

260

NAND TYPE

13 mm

2.7

MTFC16GAPALBH-ITTR

Micron Technology

FLASH CARD

INDUSTRIAL

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

17179869184 words

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA153,14X14,20

.5 mm

85 Cel

3-STATE

16GX8

16G

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B153

3.6 V

1.2 mm

200 MHz

11.5 mm

137438953472 bit

2.7 V

30

260

NAND TYPE

13 mm

2.7

M29W320EB70ZE6E

STMicroelectronics

FLASH

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

8K,64K

20 mA

2097152 words

3

YES

3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,32

8

Flash Memories

.8 mm

85 Cel

2MX16

2M

-40 Cel

8,63

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6 mm

Not Qualified

BOTTOM

33554432 bit

2.7 V

e1

NOR TYPE

.0001 Amp

8 mm

YES

70 ns

3

YES

S71WS256PC0HH3YR0

Infineon Technologies

FLASH

OTHER

84

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

16777216 words

1.8

FLASH+PSRAM

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA84,10X12,32

Other Memory ICs

.8 mm

85 Cel

16MX16

16M

-25 Cel

BOTTOM

R-PBGA-B84

1.95 V

1.2 mm

8 mm

Not Qualified

268435456 bit

1.7 V

11.6 mm

80 ns

1.8

MTFC8GAMALBH-AAT

Micron Technology

FLASH CARD

INDUSTRIAL

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

8589934592 words

8

GRID ARRAY, THIN PROFILE, FINE PITCH

.5 mm

105 Cel

8GX8

8G

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B153

3.6 V

1.2 mm

11.5 mm

68719476736 bit

2.7 V

e1

30

260

NAND TYPE

13 mm

2.7

MTFC64GAPALBH-IT

Micron Technology

FLASH CARD

INDUSTRIAL

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

68719476736 words

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA153,14X14,20

.5 mm

85 Cel

3-STATE

64GX8

64G

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B153

3.6 V

1.1 mm

200 MHz

11.5 mm

549755813888 bit

2.7 V

e1

30

260

NAND TYPE

13 mm

2.7

MTFC16GAPALBH-AATTR

Micron Technology

FLASH CARD

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

17179869184 words

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA153,14X14,20

.5 mm

105 Cel

16GX8

16G

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B153

3.6 V

1.2 mm

200 MHz

11.5 mm

137438953472 bit

2.7 V

e1

30

260

NAND TYPE

13 mm

S34ML16G202BHI000

Cypress Semiconductor

FLASH

INDUSTRIAL

63

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2147483648 words

3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

85 Cel

2GX8

2G

-40 Cel

BOTTOM

R-PBGA-B63

3

3.6 V

1.2 mm

9 mm

17179869184 bit

2.7 V

260

SLC NAND TYPE

11 mm

3

MTFC16GAPALBH-AAT

Micron Technology

FLASH CARD

INDUSTRIAL

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

17179869184 words

NO

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA153,14X14,20

.5 mm

105 Cel

16GX8

16G

-40 Cel

NO

TIN SILVER COPPER

YES

BOTTOM

HARDWARE

R-PBGA-B153

3.6 V

1.2 mm

200 MHz

11.5 mm

137438953472 bit

2.7 V

e1

30

260

NAND TYPE

13 mm

2.7

NO

MT29F8G08ABACAH4-IT:C

Micron Technology

FLASH

INDUSTRIAL

63

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

256K

35 mA

1073741824 words

3.3

NO

3/3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA63,10X12,32

Flash Memories

.8 mm

85 Cel

1GX8

1G

-40 Cel

4K

YES

YES

BOTTOM

R-PBGA-B63

3.6 V

1 mm

9 mm

Not Qualified

8589934592 bit

2.7 V

4K

SLC NAND TYPE

.0001 Amp

11 mm

NO

SST39VF3201C-70-4I-B3KE

Microchip Technology

FLASH

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

4K,32K

45 mA

2097152 words

3

YES

3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,32

Flash Memories

100

.8 mm

85 Cel

3-STATE

2MX16

2M

-40 Cel

8,63

YES

TIN SILVER COPPER

YES

BOTTOM

1

R-PBGA-B48

3

3.6 V

1.2 mm

100000 Write/Erase Cycles

6 mm

Not Qualified

BOTTOM

33554432 bit

2.7 V

BOTTOM BOOT-BLOCK

e1

260

NOR TYPE

.00005 Amp

8 mm

YES

70 ns

3

YES

MTFC32GAPALBH-IT

Micron Technology

FLASH CARD

INDUSTRIAL

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

34359738368 words

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA153,14X14,20

.5 mm

85 Cel

3-STATE

32GX8

32G

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

R-PBGA-B153

3.6 V

1.1 mm

200 MHz

11.5 mm

274877906944 bit

2.7 V

e1

30

260

NAND TYPE

13 mm

2.7

MTFC8GAMALBH-AITTR

Micron Technology

FLASH CARD

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q104

BALL

PARALLEL

SYNCHRONOUS

8589934592 words

NO

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA153,14X14,20

4

5

.5 mm

85 Cel

OPEN-DRAIN

8GX8

8G

-40 Cel

NO

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B153

3.6 V

1.2 mm

200 MHz

11.5 mm

68719476736 bit

2.7 V

e1

30

260

NAND TYPE

13 mm

2.7

NO

SST39VF1601-70-4C-B3KE

Microchip Technology

FLASH

COMMERCIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2K

35 mA

1048576 words

3

YES

3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,32

Flash Memories

100

.8 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

512

YES

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B48

3

3.6 V

1.2 mm

100000 Write/Erase Cycles

6 mm

Not Qualified

BOTTOM

16777216 bit

2.7 V

BOTTOM BOOT BLOCK

e1

NOR TYPE

.00002 Amp

8 mm

YES

70 ns

3

YES

S34MS16G202BHI000

Cypress Semiconductor

FLASH

INDUSTRIAL

63

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2147483648 words

1.8

8

GRID ARRAY, THIN PROFILE, FINE PITCH

4

.8 mm

85 Cel

2GX8

2G

-40 Cel

BOTTOM

R-PBGA-B63

3

1.95 V

1.2 mm

9 mm

17179869184 bit

1.7 V

260

SLC NAND TYPE

11 mm

1.8

M29W640GH70ZA6E

STMicroelectronics

FLASH

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

64K

10 mA

4194304 words

3

YES

3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,32

8

Flash Memories

.8 mm

85 Cel

4MX16

4M

-40 Cel

128

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6 mm

Not Qualified

67108864 bit

2.7 V

4/8

e1

NOR TYPE

.0001 Amp

8 mm

YES

70 ns

3

YES

MTFC8GAMALBH-AIT

Micron Technology

FLASH CARD

INDUSTRIAL

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

8589934592 words

8

GRID ARRAY, THIN PROFILE, FINE PITCH

.5 mm

85 Cel

8GX8

8G

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B153

3.6 V

1.2 mm

11.5 mm

68719476736 bit

2.7 V

e1

30

260

NAND TYPE

13 mm

2.7

MTFC32GAPALBH-AIT

Micron Technology

FLASH CARD

INDUSTRIAL

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

34359738368 words

8

GRID ARRAY, THIN PROFILE, FINE PITCH

.5 mm

85 Cel

32GX8

32G

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B153

3.6 V

1.2 mm

11.5 mm

274877906944 bit

2.7 V

e1

30

260

13 mm

2.7

MTFC128GAPALNS-AIT

Micron Technology

FLASH CARD

INDUSTRIAL

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

137438953472 words

8

GRID ARRAY, THIN PROFILE, FINE PITCH

.5 mm

85 Cel

128GX8

128G

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B153

3.6 V

1.2 mm

11.5 mm

1099511627776 bit

2.7 V

e1

30

260

13 mm

2.7

SST38VF6401-90-5I-B3KE

Microchip Technology

FLASH

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

TS 16949

BALL

PARALLEL

ASYNCHRONOUS

4K

50 mA

4194304 words

3

YES

3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,32

Flash Memories

100

.8 mm

85 Cel

3-STATE

4MX16

4M

-40 Cel

1K

YES

Tin/Silver/Copper (Sn/Ag/Cu)

YES

BOTTOM

1

R-PBGA-B48

3

3.6 V

1.2 mm

100000 Write/Erase Cycles

6 mm

Not Qualified

BOTTOM

67108864 bit

2.7 V

BOTTOM BOOT BLOCK

4

e1

40

260

NOR TYPE

.00003 Amp

8 mm

YES

90 ns

3

YES

MTFC16GAPALBH-AIT

Micron Technology

FLASH CARD

INDUSTRIAL

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

17179869184 words

8

GRID ARRAY, THIN PROFILE, FINE PITCH

.5 mm

85 Cel

16GX8

16G

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B153

3.6 V

1.2 mm

11.5 mm

137438953472 bit

2.7 V

e1

30

260

13 mm

2.7

M29W320ET70ZE6E

STMicroelectronics

FLASH

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

8K,64K

20 mA

2097152 words

3

YES

3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,32

8

Flash Memories

.8 mm

85 Cel

2MX16

2M

-40 Cel

8,63

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6 mm

Not Qualified

TOP

33554432 bit

2.7 V

e1

NOR TYPE

.0001 Amp

8 mm

YES

70 ns

3

YES

MTFC32GAPALBH-AAT

Micron Technology

FLASH CARD

INDUSTRIAL

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

34359738368 words

8

GRID ARRAY, THIN PROFILE, FINE PITCH

.5 mm

105 Cel

32GX8

32G

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B153

3.6 V

1.2 mm

11.5 mm

274877906944 bit

2.7 V

e1

30

260

13 mm

2.7

MTFC64GAPALBH-AAT

Micron Technology

FLASH CARD

INDUSTRIAL

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

68719476736 words

8

GRID ARRAY, THIN PROFILE, FINE PITCH

.5 mm

105 Cel

64GX8

64G

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B153

3.6 V

1.2 mm

11.5 mm

549755813888 bit

2.7 V

30

260

13 mm

2.7

M29W160ET70ZA6E

STMicroelectronics

FLASH

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

1048576 words

3

YES

3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,32

8

Flash Memories

.8 mm

85 Cel

1MX16

1M

-40 Cel

1,2,1,31

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6 mm

Not Qualified

TOP

16777216 bit

2.7 V

TOP BOOT BLOCK

e1

NOR TYPE

.0001 Amp

8 mm

YES

70 ns

3

YES

SST39LF402C-55-4C-B3KE

Microchip Technology

FLASH

COMMERCIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

8K,4K,16K,32K

30 mA

262144 words

3.3

YES

3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,32

Flash Memories

100

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

1,2,1,7

YES

TIN SILVER COPPER

YES

BOTTOM

1

R-PBGA-B48

3

3.6 V

1.2 mm

100000 Write/Erase Cycles

6 mm

Not Qualified

TOP

4194304 bit

3 V

TOP BOOT BLOCK

e1

40

260

NOR TYPE

.00002 Amp

8 mm

YES

55 ns

3.3

YES

SST39LF401C-55-4C-B3KE

Microchip Technology

FLASH

COMMERCIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

8K,4K,16K,32K

30 mA

262144 words

3.3

YES

3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,32

Flash Memories

100

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

1,2,1,7

YES

TIN SILVER COPPER

YES

BOTTOM

1

R-PBGA-B48

3

3.6 V

1.2 mm

100000 Write/Erase Cycles

6 mm

Not Qualified

BOTTOM

4194304 bit

3 V

BOTTOM BOOT BLOCK

e1

40

260

NOR TYPE

.00002 Amp

8 mm

YES

55 ns

3.3

YES

SST39VF3201C-70-4I-B3KE-T-125

Microchip Technology

FLASH

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

4K,32K

45 mA

2097152 words

3

YES

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,32

100

.8 mm

85 Cel

3-STATE

2MX16

2M

-40 Cel

8,63

YES

YES

BOTTOM

1

R-PBGA-B48

3.6 V

1.2 mm

100000 Write/Erase Cycles

6 mm

BOTTOM

33554432 bit

2.7 V

BOTTOM BOOT-BLOCK

NOR TYPE

.00005 Amp

8 mm

YES

70 ns

3

YES

SST39VF400A-70-4I-B3KE

Microchip Technology

FLASH

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2K

30 mA

262144 words

3

YES

3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,32

Flash Memories

100

.8 mm

85 Cel

3-STATE

256KX16

256K

-40 Cel

128

YES

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

1

R-PBGA-B48

3

3.6 V

1.2 mm

100000 Write/Erase Cycles

6 mm

Not Qualified

4194304 bit

2.7 V

e1

40

260

NOR TYPE

.00002 Amp

8 mm

YES

70 ns

3

YES

M29W320EB70ZE6F

STMicroelectronics

FLASH

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

8K,64K

20 mA

2097152 words

3

YES

3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,32

8

Flash Memories

.8 mm

85 Cel

2MX16

2M

-40 Cel

8,63

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6 mm

Not Qualified

BOTTOM

33554432 bit

2.7 V

e1

NOR TYPE

.0001 Amp

8 mm

YES

70 ns

3

YES

SST39VF402C-70-4I-B3KE

Microchip Technology

FLASH

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

8K,4K,16K,32K

30 mA

262144 words

3

YES

3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,32

Flash Memories

100

.8 mm

85 Cel

3-STATE

256KX16

256K

-40 Cel

1,2,1,7

YES

TIN SILVER COPPER

YES

BOTTOM

1

R-PBGA-B48

3

3.6 V

1.2 mm

100000 Write/Erase Cycles

6 mm

Not Qualified

TOP

4194304 bit

2.7 V

TOP BOOT BLOCK

e1

40

260

NOR TYPE

.00002 Amp

8 mm

YES

70 ns

3

YES

MTFC128GAPALNS-IT

Micron Technology

FLASH CARD

INDUSTRIAL

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

137438953472 words

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA153,14X14,20

.5 mm

85 Cel

3-STATE

128GX8

128G

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

R-PBGA-B153

3.6 V

1.1 mm

200 MHz

11.5 mm

1099511627776 bit

2.7 V

e1

30

260

NAND TYPE

13 mm

2.7

M29W160ET70ZA6F

STMicroelectronics

FLASH

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

1048576 words

3

YES

3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,32

8

Flash Memories

.8 mm

85 Cel

1MX16

1M

-40 Cel

1,2,1,31

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6 mm

Not Qualified

TOP

16777216 bit

2.7 V

TOP BOOT BLOCK

e1

NOR TYPE

.0001 Amp

8 mm

YES

70 ns

3

YES

MTFC8GAMALBH-IT

Micron Technology

FLASH CARD

INDUSTRIAL

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

8589934592 words

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA153,14X14,20

.5 mm

85 Cel

3-STATE

8GX8

8G

-40 Cel

BOTTOM

R-PBGA-B153

3.6 V

1.1 mm

200 MHz

11.5 mm

68719476736 bit

2.7 V

NAND TYPE

13 mm

2.7

SST39VF3201C-70-4I-B3KE-T-VAO

Microchip Technology

FLASH

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

PARALLEL

ASYNCHRONOUS

4K,32K

45 mA

2097152 words

3

YES

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,32

100

.8 mm

85 Cel

3-STATE

2MX16

2M

-40 Cel

8,63

YES

BOTTOM

1

R-PBGA-B48

3.6 V

1.2 mm

100000 Write/Erase Cycles

6 mm

BOTTOM

33554432 bit

2.7 V

BOTTOM BOOT BLOCK

NOR TYPE

.00005 Amp

8 mm

YES

70 ns

3

YES

AM29LV160DB90WCC

Advanced Micro Devices

FLASH

COMMERCIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

30 mA

1048576 words

3

YES

3/3.3

16

GRID ARRAY

BGA48,6X8,32

8

Flash Memories

20

.8 mm

70 Cel

1MX16

1M

0 Cel

1,2,1,31

YES

Tin/Lead (Sn/Pb)

YES

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

8 mm

Not Qualified

BOTTOM

16777216 bit

2.7 V

EMBEDDED ALGORITHMS; 20 YEARS DATA RETENTION; BOTTOM BOOT BLOCK

e0

NOR TYPE

.000005 Amp

9 mm

YES

90 ns

3

YES

AM29LV160DB-90WCC

Spansion

FLASH

COMMERCIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

30 mA

1048576 words

3

YES

3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,32

8

Flash Memories

.8 mm

70 Cel

1MX16

1M

0 Cel

1,2,1,31

YES

TIN LEAD

YES

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

8 mm

Not Qualified

BOTTOM

16777216 bit

2.7 V

BOTTOM BOOT BLOCK

e0

260

NOR TYPE

.000005 Amp

9 mm

YES

90 ns

3

YES

M29W800FT70ZA3SE

Micron Technology

FLASH

AUTOMOTIVE

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

524288 words

3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

8

.8 mm

125 Cel

512KX16

512K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6 mm

TOP

8388608 bit

3 V

TOP BOOT BLOCK

e1

8 mm

70 ns

3

MTFC128GAPALNS-AAT

Micron Technology

FLASH CARD

INDUSTRIAL

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

137438953472 words

8

GRID ARRAY, THIN PROFILE, FINE PITCH

.5 mm

105 Cel

128GX8

128G

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B153

3.6 V

1.2 mm

11.5 mm

1099511627776 bit

2.7 V

e1

30

260

13 mm

2.7

M29W320EB70ZE6

STMicroelectronics

FLASH

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

8K,64K

20 mA

2097152 words

3

YES

3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,32

8

Flash Memories

.8 mm

85 Cel

2MX16

2M

-40 Cel

8,63

YES

TIN LEAD

YES

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6 mm

Not Qualified

BOTTOM

33554432 bit

2.7 V

e0

NOR TYPE

.0001 Amp

8 mm

YES

70 ns

3

YES

MTFC4GLGDM-AITA

Micron Technology

FLASH CARD

INDUSTRIAL

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4294967296 words

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA153,14X14,20

.5 mm

85 Cel

4GX8

4G

-40 Cel

BOTTOM

R-PBGA-B153

3.6 V

1.374 mm

52 MHz

11.5 mm

34359738368 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

NAND TYPE

13 mm

NAND512W3A2BZA6E

STMicroelectronics

FLASH

INDUSTRIAL

63

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

16K

20 mA

67108864 words

3

NO

3/3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA63,10X12,32

Flash Memories

.8 mm

85 Cel

64MX8

64M

-40 Cel

4K

YES

YES

BOTTOM

R-PBGA-B63

3.6 V

1.05 mm

9 mm

Not Qualified

536870912 bit

2.7 V

512

NOT SPECIFIED

NOT SPECIFIED

SLC NAND TYPE

.00005 Amp

11 mm

12000 ns

3

NO

NAND512W3A2SZA6E

Micron Technology

FLASH

INDUSTRIAL

63

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

16K

20 mA

67108864 words

3

NO

3/3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA63,10X12,32

Flash Memories

.8 mm

85 Cel

64MX8

64M

-40 Cel

4K

YES

TIN SILVER COPPER NICKEL

YES

BOTTOM

R-PBGA-B63

3.6 V

1.05 mm

9 mm

Not Qualified

536870912 bit

2.7 V

512

e2

30

260

SLC NAND TYPE

.00005 Amp

11 mm

35 ns

3

NO

S29JL064H90BAI000

Cypress Semiconductor

FLASH

INDUSTRIAL

63

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

4194304 words

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

8

.8 mm

85 Cel

4MX16

4M

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B63

3

3.6 V

1.2 mm

11 mm

BOTTOM/TOP

67108864 bit

2.7 V

e0

260

NOR TYPE

12 mm

90 ns

3

SFEM064GB1ED1TO-I-6F-111-STD

Swissbit Ag

FLASH CARD

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

68719476736 words

3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

.5 mm

85 Cel

64GX8

64G

-40 Cel

BOTTOM

R-PBGA-B153

3.6 V

200 MHz

11.5 mm

549755813888 bit

2.7 V

TLC NAND TYPE

13 mm

3.3

M29W160ET70ZA6

STMicroelectronics

FLASH

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

1048576 words

3

YES

3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,32

8

Flash Memories

.8 mm

85 Cel

1MX16

1M

-40 Cel

1,2,1,31

YES

YES

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6 mm

Not Qualified

TOP

16777216 bit

2.7 V

TOP BOOT BLOCK

NOR TYPE

.0001 Amp

8 mm

YES

70 ns

3

YES

MTFC32GLXDM-WT

Micron Technology

Embedded MMC

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

80 mA

34359738368 words

1.8

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA153,14X14,20

.5 mm

85 Cel

OPEN-DRAIN

32GX8

32G

-25 Cel

BOTTOM

HARDWARE

R-PBGA-B153

1.95 V

1.2 mm

52 MHz

11.5 mm

274877906944 bit

1.65 V

NAND TYPE

13 mm

1.8

SDINBDG4-64G-XI2

Western Digital

FLASH CARD

INDUSTRIAL

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

68719476736 words

3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA153,14X14,20

.5 mm

85 Cel

64GX8

64G

-40 Cel

BOTTOM

R-PBGA-B153

3.6 V

1.2 mm

3000 Write/Erase Cycles

11 mm

549755813888 bit

2.7 V

MLC NAND TYPE

13.5 mm

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.