VFBGA Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29GL064S80BHB040	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	4194304 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8		20	.8 mm	105 Cel	3-STATE	4MX16	4M	-40 Cel	8,127			YES	BOTTOM	R-PBGA-B48	3	3.6 V	1 mm	100000 Write/Erase Cycles		6.15 mm			BOTTOM	67108864 bit	2.7 V		8/16				NOR TYPE	.0001 Amp	8.15 mm		80 ns	3	YES
S29WS512PABBAW003	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		32MX16	32M	-25 Cel	8, 510	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B84	3	1.95 V	1 mm			8 mm	Not Qualified		BOTTOM/TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1			NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
S29GL064N90BAI42	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		4MX16	4M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B48	3	3.6 V	1 mm			6.15 mm	Not Qualified			67108864 bit	2.7 V			e0			NOR TYPE		8.15 mm		90 ns	3
S29WS256P0SBFW200	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm			8 mm			BOTTOM/TOP	268435456 bit	1.7 V						NOR TYPE		11.6 mm		80 ns	1.8
S29WS064R0PBHW000	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,32K	66 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-25 Cel	4,127	YES		YES	BOTTOM	R-PBGA-B84		1.95 V	1 mm			8 mm	Not Qualified		TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE	.00007 Amp	11.6 mm	YES	80 ns	1.8	YES
S29WS512PABBAW300	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm			8 mm			BOTTOM/TOP	536870912 bit	1.7 V						NOR TYPE		11.6 mm		80 ns	1.8
S29WS128P0LBAW200	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		8MX16	8M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm			8 mm			BOTTOM/TOP	134217728 bit	1.7 V						NOR TYPE		11.6 mm		80 ns	1.8
S29WS512R0PBHW200	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm			8 mm			TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE, TOP BOOT BLOCK					NOR TYPE		11.6 mm		80 ns	1.8
S29WS256RAABHW220	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1 mm			8 mm			TOP	268435456 bit	1.7 V						NOR TYPE		11.6 mm		80 ns	1.8
S29WS128P0SBFW003	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	8,126	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B84	3	1.95 V	1 mm			8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1	40	260	NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
S29GL01GT11GHIV43	Infineon Technologies	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		64MX16	64M	-40 Cel					BOTTOM	R-PBGA-B56		3.6 V	1 mm			7 mm			BOTTOM/TOP	1073741824 bit	2.7 V						NOR TYPE		9 mm		110 ns	2.7
S29XS128RABBHW300	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16X8	16	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified			128 bit	1.7 V								7.7 mm			1.8
S29NS512PABBJW000	Infineon Technologies	FLASH	COMMERCIAL EXTENDED	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	64K	80 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,8X14,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-25 Cel	512	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64		1.95 V	1 mm			8 mm	Not Qualified		BOTTOM/TOP	536870912 bit	1.7 V			e1			NOR TYPE	.00007 Amp	9.2 mm	YES	80 ns	1.8	YES
S29NS064J0PBFW000	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,32K	60 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-25 Cel	4,127	YES	TIN SILVER COPPER NICKEL	YES	BOTTOM	R-PBGA-B44	3	1.95 V	1 mm			8 mm	Not Qualified	45 ms	TOP	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e2	40	260	NOR TYPE	.00004 Amp	9.2 mm	YES	65 ns	1.8
S29NS128N0SBJW002	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	60 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES	TIN SILVER COPPER NICKEL	YES	BOTTOM	R-PBGA-B44	3	1.95 V	1 mm			8 mm	Not Qualified		TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e2	40	260	NOR TYPE	.00007 Amp	9.2 mm	YES	80 ns	1.8	YES
S29NS256NBJW003	Infineon Technologies	FLASH	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16MX16	16M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	3	1.95 V	1 mm		66 MHz	9.95 mm	Not Qualified		BOTTOM/TOP	268435456 bit	1.7 V			e1			NOR TYPE		10.95 mm			1.8
S29NS512RAABJW003	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	64K	80 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,8X14,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-25 Cel	512	YES		YES	BOTTOM	R-PBGA-B64		1.95 V	1 mm			8 mm	Not Qualified			536870912 bit	1.7 V						NOR TYPE	.00004 Amp	9.2 mm	YES	80 ns	1.8	NO
S29NS512R0PBJW000	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	64K	80 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,8X14,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-25 Cel	512	YES		YES	BOTTOM	R-PBGA-B64		1.95 V	1 mm			8 mm	Not Qualified			536870912 bit	1.7 V						NOR TYPE	.00004 Amp	9.2 mm	YES	80 ns	1.8	NO
S29NS128R0PBJW003	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	80 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES		YES	BOTTOM	R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified		TOP	134217728 bit	1.7 V						NOR TYPE	.00004 Amp	7.7 mm	YES	80 ns	1.8	NO
S29NS256N0SBJW003	Infineon Technologies	FLASH	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	60 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,12X18,20		Flash Memories		.5 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES	TIN SILVER COPPER NICKEL	YES	BOTTOM	R-PBGA-B48	3	1.95 V	1 mm			9.95 mm	Not Qualified		TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e2	40	260	NOR TYPE	.00007 Amp	10.95 mm	YES	80 ns	1.8	YES
S29NS064J0LBAW002	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,32K	60 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-25 Cel	4,127	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B44	3	1.95 V	1 mm			8 mm	Not Qualified	80 ms	TOP	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE	.00004 Amp	9.2 mm	YES	70 ns	1.8
S29NS256N0PBJW002	Infineon Technologies	FLASH	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	60 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,12X18,20		Flash Memories		.5 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES	TIN SILVER COPPER NICKEL	YES	BOTTOM	R-PBGA-B48	3	1.95 V	1 mm			9.95 mm	Not Qualified		TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e2	40	260	NOR TYPE	.00007 Amp	10.95 mm	YES	80 ns	1.8	YES
S29NS128P0PBJW000	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		8MX16	8M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3	1.95 V	1 mm			6.2 mm			TOP	134217728 bit	1.7 V			e1	40	260	NOR TYPE		7.7 mm		80 ns	1.8
S29NS128R0PBJW000	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	80 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES		YES	BOTTOM	R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified		TOP	134217728 bit	1.7 V						NOR TYPE	.00004 Amp	7.7 mm	YES	80 ns	1.8	NO
S29NS128P0SBJW003	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	80 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	1.95 V	1 mm			6.2 mm	Not Qualified		TOP	134217728 bit	1.7 V			e1	40	260	NOR TYPE	.00007 Amp	7.7 mm	YES	80 ns	1.8	YES
S29NS512P0SBJW000	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	64K	80 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,8X14,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-25 Cel	512	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B64		1.95 V	1 mm			8 mm	Not Qualified			536870912 bit	1.7 V			e1			NOR TYPE	.00007 Amp	9.2 mm	YES	80 ns	1.8	YES
S29NS512R0PBJW003	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	64K	80 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,8X14,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-25 Cel	512	YES		YES	BOTTOM	R-PBGA-B64		1.95 V	1 mm			8 mm	Not Qualified			536870912 bit	1.7 V						NOR TYPE	.00004 Amp	9.2 mm	YES	80 ns	1.8	NO
S29NS064J0PBFW002	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,32K	60 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-25 Cel	4,127	YES	TIN SILVER COPPER NICKEL	YES	BOTTOM	R-PBGA-B44	3	1.95 V	1 mm			8 mm	Not Qualified	45 ms	TOP	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e2	40	260	NOR TYPE	.00004 Amp	9.2 mm	YES	65 ns	1.8
S29NS512P0PBJW03	Infineon Technologies	FLASH	COMMERCIAL EXTENDED	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		32MX16	32M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64		1.95 V	1 mm			8 mm	Not Qualified		BOTTOM/TOP	536870912 bit	1.7 V			e1			NOR TYPE		9.2 mm		80 ns	1.8
S29NS128NBJW003	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		8MX16	8M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B44	3	1.95 V	1 mm		66 MHz	8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	1.7 V			e1			NOR TYPE		9.2 mm			1.8
S29NS512PABBJW00	Infineon Technologies	FLASH	COMMERCIAL EXTENDED	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		32MX16	32M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64		1.95 V	1 mm			8 mm	Not Qualified		BOTTOM/TOP	536870912 bit	1.7 V			e1			NOR TYPE		9.2 mm		80 ns	1.8
S29NS512P0SBJW30	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B64		1.95 V	1 mm			8 mm	Not Qualified			536870912 bit	1.7 V						NOR TYPE		9.2 mm		80 ns	1.8
S29NS512PABBJW03	Infineon Technologies	FLASH	COMMERCIAL EXTENDED	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		32MX16	32M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64		1.95 V	1 mm			8 mm	Not Qualified		BOTTOM/TOP	536870912 bit	1.7 V			e1			NOR TYPE		9.2 mm		80 ns	1.8
S29NS512P0PBJW003	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	64K	80 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,8X14,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-25 Cel	512	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B64		1.95 V	1 mm			8 mm	Not Qualified			536870912 bit	1.7 V			e1	40	260	NOR TYPE	.00007 Amp	9.2 mm	YES	80 ns	1.8	YES
S29NS512P0PBJW000	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	64K	80 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,8X14,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-25 Cel	512	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B64		1.95 V	1 mm			8 mm	Not Qualified			536870912 bit	1.7 V			e1	40	260	NOR TYPE	.00007 Amp	9.2 mm	YES	80 ns	1.8	YES
S29NS512RAABJW000	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	64K	80 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,8X14,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-25 Cel	512	YES		YES	BOTTOM	R-PBGA-B64		1.95 V	1 mm			8 mm	Not Qualified			536870912 bit	1.7 V						NOR TYPE	.00004 Amp	9.2 mm	YES	80 ns	1.8	NO
S29NS256P0PBJW003	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16MX16	16M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3	1.95 V	1 mm			6.2 mm			TOP	268435456 bit	1.7 V			e1	40	260	NOR TYPE		7.7 mm		80 ns	1.8
S29NS256RAABJW003	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	80 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified		TOP	268435456 bit	1.7 V						NOR TYPE	.00004 Amp	7.7 mm	YES	80 ns	1.8	NO
S29NS064J0PBAW002	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,32K	60 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-25 Cel	4,127	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B44	3	1.95 V	1 mm			8 mm	Not Qualified	45 ms	TOP	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE	.00004 Amp	9.2 mm	YES	65 ns	1.8
S29NS512P0PBJW00	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		32MX16	32M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64		1.95 V	1 mm			8 mm	Not Qualified		BOTTOM/TOP	536870912 bit	1.7 V			e1			NOR TYPE		9.2 mm		80 ns	1.8
S29NS128RAABJW003	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	80 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES		YES	BOTTOM	R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified		TOP	134217728 bit	1.7 V						NOR TYPE	.00004 Amp	7.7 mm	YES	80 ns	1.8	NO
S29NS064J0PBJW002	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,32K	60 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-25 Cel	4,127	YES	TIN SILVER COPPER NICKEL	YES	BOTTOM	R-PBGA-B44	3	1.95 V	1 mm			8 mm	Not Qualified	45 ms	TOP	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e2	40	260	NOR TYPE	.00004 Amp	9.2 mm	YES	65 ns	1.8
S29NS128P0SBJW000	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	80 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	1.95 V	1 mm			6.2 mm	Not Qualified		TOP	134217728 bit	1.7 V			e1	40	260	NOR TYPE	.00007 Amp	7.7 mm	YES	80 ns	1.8	YES
S29NS256P0SBJW000	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16MX16	16M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3	1.95 V	1 mm			6.2 mm			TOP	268435456 bit	1.7 V			e1	40	260	NOR TYPE		7.7 mm		80 ns	1.8
S29NS128P0PBJW003	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	80 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	1.95 V	1 mm			6.2 mm	Not Qualified		TOP	134217728 bit	1.7 V			e1	40	260	NOR TYPE	.00007 Amp	7.7 mm	YES	80 ns	1.8	YES
S29NS064J0PBAW000	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,32K	60 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-25 Cel	4,127	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B44	3	1.95 V	1 mm			8 mm	Not Qualified	45 ms	TOP	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE	.00004 Amp	9.2 mm	YES	65 ns	1.8
S29GL512T10GHI010	Infineon Technologies	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		32MX16	32M	-40 Cel					BOTTOM	R-PBGA-B56	3	3.6 V	1 mm			7 mm				536870912 bit	2.7 V								9 mm		100 ns	2.7
S29NS064J0LBAW000	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,32K	60 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-25 Cel	4,127	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B44	3	1.95 V	1 mm			8 mm	Not Qualified	80 ms	TOP	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE	.00004 Amp	9.2 mm	YES	70 ns	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.