VFBGA Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S34ML01G100BHI013	Infineon Technologies	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	134217728 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63		3.6 V	1 mm		9 mm	Not Qualified			1073741824 bit	2.7 V		2K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	3	NO
S29PL127J70BFW062	Infineon Technologies	FLASH		64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X12,32			20	.8 mm	85 Cel	3-STATE	8MX16	8M	-25 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1 mm	100000 Write/Erase Cycles	8 mm		.00007 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	11.6 mm	YES	70 ns	3	YES
S29PL127J60TFA062	Infineon Technologies	FLASH		64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X12,32			20	.8 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1 mm	100000 Write/Erase Cycles	8 mm		.00006 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	11.6 mm	YES	60 ns	3	YES
S34ML04G200BHB010	Infineon Technologies	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	105 Cel		512MX8	512M	-40 Cel					BOTTOM	R-PBGA-B63		3.6 V	1 mm		9 mm				4294967296 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm			3
S29PL127J60BFA061	Infineon Technologies	FLASH		64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X12,32			20	.8 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1 mm	100000 Write/Erase Cycles	8 mm		.00006 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	11.6 mm	YES	60 ns	3	YES
S29PL127J60TFW041	Infineon Technologies	FLASH		80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32			20	.8 mm	85 Cel	3-STATE	8MX16	8M	-25 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B80		3.6 V	1 mm	100000 Write/Erase Cycles	8 mm		.00006 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	11 mm	YES	60 ns	3	YES
S29PL127J70BFI10	Infineon Technologies	FLASH	INDUSTRIAL	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8388608 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		8MX16	8M	-40 Cel					BOTTOM	R-PBGA-B80		3.6 V	1 mm		8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK					NOR TYPE		11 mm		70 ns	3
S34ML02G200BHA013	Infineon Technologies	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		256MX8	256M	-40 Cel					BOTTOM	R-PBGA-B63		3.6 V	1 mm		9 mm				2147483648 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm			3
S29PL127J60BFW061	Infineon Technologies	FLASH		64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X12,32			20	.8 mm	85 Cel	3-STATE	8MX16	8M	-25 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1 mm	100000 Write/Erase Cycles	8 mm		.00006 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	11.6 mm	YES	60 ns	3	YES
S34ML04G200BHI010	Infineon Technologies	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES		YES	BOTTOM	R-PBGA-B63		3.6 V	1 mm		9 mm	Not Qualified			4294967296 bit	2.7 V		2K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	3	NO
S29PL127J60BFA062	Infineon Technologies	FLASH		64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X12,32			20	.8 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1 mm	100000 Write/Erase Cycles	8 mm		.00006 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	11.6 mm	YES	60 ns	3	YES
S29PL127J70TFI063	Infineon Technologies	FLASH		64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X12,32			20	.8 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1 mm	100000 Write/Erase Cycles	8 mm		.00007 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	11.6 mm	YES	70 ns	3	YES
S29PL127J70TFI061	Infineon Technologies	FLASH		64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X12,32			20	.8 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1 mm	100000 Write/Erase Cycles	8 mm		.00007 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	11.6 mm	YES	70 ns	3	YES
S34ML02G200GHA000	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		256MX8	256M	-40 Cel					BOTTOM	R-PBGA-B67		3.6 V	1 mm		6.5 mm				2147483648 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		8 mm			3
S29PL127J70TFI060	Infineon Technologies	FLASH		64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X12,32			20	.8 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1 mm	100000 Write/Erase Cycles	8 mm		.00007 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	11.6 mm	YES	70 ns	3	YES
S29PL127J70BFI010	Infineon Technologies	FLASH	INDUSTRIAL	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-40 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1 mm		8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V		8	e1	40	260	NOR TYPE	.000005 Amp	11 mm	YES	70 ns	3	YES
S29PL127J70TFA061	Infineon Technologies	FLASH		64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X12,32			20	.8 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1 mm	100000 Write/Erase Cycles	8 mm		.00007 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	11.6 mm	YES	70 ns	3	YES
S29PL127J80BFA052	Infineon Technologies	FLASH		80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	1.8	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32			20	.8 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B80		1.95 V	1 mm	100000 Write/Erase Cycles	8 mm		.00008 ms	BOTTOM/TOP	134217728 bit	1.65 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	11 mm	YES	80 ns	1.8	YES
S29PL127J70TFI062	Infineon Technologies	FLASH		64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X12,32			20	.8 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1 mm	100000 Write/Erase Cycles	8 mm		.00007 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	11.6 mm	YES	70 ns	3	YES
S29PL127J70TFI041	Infineon Technologies	FLASH		80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32			20	.8 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B80		3.6 V	1 mm	100000 Write/Erase Cycles	8 mm		.00007 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	11 mm	YES	70 ns	3	YES
S29PL127J60TFI060	Infineon Technologies	FLASH		64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X12,32			20	.8 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1 mm	100000 Write/Erase Cycles	8 mm		.00006 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	11.6 mm	YES	60 ns	3	YES
S34ML01G200BHA010	Infineon Technologies	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM	R-PBGA-B63		3.6 V	1 mm		9 mm				1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm			3
S29PL127J80BFW053	Infineon Technologies	FLASH		80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	1.8	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32			20	.8 mm	85 Cel	3-STATE	8MX16	8M	-25 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B80		1.95 V	1 mm	100000 Write/Erase Cycles	8 mm		.00008 ms	BOTTOM/TOP	134217728 bit	1.65 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	11 mm	YES	80 ns	1.8	YES
S29PL64J60BFW15	Infineon Technologies	FLASH	OTHER	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4194304 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B56		3.6 V	1 mm		7 mm	Not Qualified		BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		9 mm		60 ns	3
S29JL032J70BHI323	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	8K,64K	45 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	YES	BOTTOM	R-PBGA-B48	3	3.6 V	1 mm		6.15 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.000005 Amp	8.15 mm	YES	70 ns	3	YES
S29AS016J70BFI013	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	30 mA	1048576 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		1MX16	1M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3	1.95 V	1 mm		6.15 mm	Not Qualified		TOP	16777216 bit	1.65 V	TOP BOOT BLOCK		e1	40	260	NOR TYPE	.00003 Amp	8.15 mm	YES	70 ns	1.8	YES
S29PL064J60BFW070	Infineon Technologies	FLASH		48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32			20	.8 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B48		3.6 V	1 mm	100000 Write/Erase Cycles	6.15 mm		.00006 ms	BOTTOM/TOP	67108864 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	8.15 mm	YES	60 ns	3	YES
S34ML01G200GHA010	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM	R-PBGA-B67		3.6 V	1 mm		6.5 mm				1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		8 mm			3
S29AL016J70BFN023	Infineon Technologies	FLASH	AUTOMOTIVE	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3	3.6 V	1 mm		6.15 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	70 ns	3	YES
S34ML02G200BHV013	Infineon Technologies	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	105 Cel		256MX8	256M	-40 Cel					BOTTOM	R-PBGA-B63		3.6 V	1 mm		9 mm				2147483648 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm			3
S29AL016J70BHN022	Infineon Technologies	FLASH	AUTOMOTIVE	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		1MX16	1M	-40 Cel					BOTTOM	R-PBGA-B48		3.6 V	1 mm		6.15 mm			BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		8.15 mm		70 ns	3
S34MS04G204BHB003	Infineon Technologies	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			268435456 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	105 Cel		256MX16	256M	-40 Cel					BOTTOM	R-PBGA-B63		1.95 V	1 mm		9 mm				4294967296 bit	1.7 V						SLC NAND TYPE		11 mm			1.8
S34MS01G204BHA000	Infineon Technologies	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		64MX16	64M	-40 Cel					BOTTOM	R-PBGA-B63		1.95 V	1 mm		9 mm				1073741824 bit	1.7 V						SLC NAND TYPE		11 mm			1.8
S29PL032J70BFW12	Infineon Technologies	FLASH	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories		.8 mm	85 Cel		2MX16	2M	-25 Cel	16,62	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3	3.6 V	1 mm		6.15 mm	Not Qualified		BOTTOM/TOP	33554432 bit	2.7 V		8	e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	70 ns	3	YES
S29PL127J70BFW002	Infineon Technologies	FLASH	OTHER	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1 mm		8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	11 mm	YES	70 ns	3	YES
S34MS04G104BHI013	Infineon Technologies	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	268435456 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		256MX16	256M	-40 Cel	4K	YES		YES	BOTTOM	R-PBGA-B63		1.95 V	1 mm		9 mm	Not Qualified			4294967296 bit	1.7 V		1K				SLC NAND TYPE	.00005 Amp	11 mm		45 ns	1.8	NO
S29PL127J60BFW13	Infineon Technologies	FLASH	OTHER	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8388608 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		8MX16	8M	-25 Cel					BOTTOM	R-PBGA-B80		3.6 V	1 mm		8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK					NOR TYPE		11 mm		60 ns	3
S29AS016J70BHIF43	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.5 mm	85 Cel		1MX16	1M	-40 Cel					BOTTOM	R-PBGA-B48		1.95 V	1 mm		4 mm			BOTTOM	16777216 bit	1.65 V						NOR TYPE		6 mm		70 ns	1.8
S29PL032J70BFI070	Infineon Technologies	FLASH		48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	2097152 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32			20	.8 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B48	3	3.6 V	1 mm	100000 Write/Erase Cycles	6.15 mm		.00007 ms	BOTTOM/TOP	33554432 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	8.15 mm	YES	70 ns	3	YES
S29PL127J70BFW00	Infineon Technologies	FLASH	OTHER	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1 mm		8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	11 mm	YES	70 ns	3	YES
S29PL064J55BFA101	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32			20	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		.000055 ms	BOTTOM/TOP	67108864 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	9 mm	YES	55 ns	3	YES
S29PL256N65GAWW00	Infineon Technologies	FLASH	COMMERCIAL EXTENDED	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	32K,128K	55 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		16MX16	16M	-25 Cel	8,126	YES		YES	BOTTOM	R-PBGA-B84		3.1 V	1 mm		8 mm	Not Qualified		BOTTOM/TOP	268435456 bit	2.7 V		8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00004 Amp	11.6 mm	YES	65 ns	3	YES
S29PL64J55BFI12	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4194304 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B48		3.6 V	1 mm		6.15 mm	Not Qualified		BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		8.15 mm		55 ns	3
S29PL032J60BFW121	Infineon Technologies	FLASH	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories		.8 mm	85 Cel		2MX16	2M	-25 Cel	16,62	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3	3.6 V	1 mm		6.15 mm	Not Qualified		BOTTOM/TOP	33554432 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	60 ns	3	YES
S34ML01G104BHB000	Infineon Technologies	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3.3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	105 Cel		64MX16	64M	-40 Cel					BOTTOM	R-PBGA-B63		3.6 V	1 mm		9 mm				1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm			3
S29PL032J55BFI101	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	2097152 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32			20	.8 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1 mm	100000 Write/Erase Cycles	7 mm		.000055 ms	BOTTOM/TOP	33554432 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	9 mm	YES	55 ns	3	YES
S29PL127N70GAW000	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		8MX16	8M	-25 Cel			TIN LEAD		BOTTOM	R-PBGA-B64	3	3.1 V	1 mm		8 mm	Not Qualified			134217728 bit	2.7 V			e0			NOR TYPE		11.6 mm		70 ns	3
S29PL127J65BFW01	Infineon Technologies	FLASH	OTHER	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES	1.8,3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	16,254	YES	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1 mm		8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	11 mm	YES	65 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.