VFBGA Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29NS064J0PBAW003	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,32K	60 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-25 Cel	4,127	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B44	3	1.95 V	1 mm			8 mm	Not Qualified	45 ms	TOP	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE	.00004 Amp	9.2 mm	YES	65 ns	1.8
S29NS064J0PBJW000	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,32K	60 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-25 Cel	4,127	YES	TIN SILVER COPPER NICKEL	YES	BOTTOM	R-PBGA-B44	3	1.95 V	1 mm			8 mm	Not Qualified	45 ms	TOP	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e2	40	260	NOR TYPE	.00004 Amp	9.2 mm	YES	65 ns	1.8
S29NS512P0SBJW03	Infineon Technologies	FLASH	COMMERCIAL EXTENDED	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		32MX16	32M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64		1.95 V	1 mm			8 mm	Not Qualified		BOTTOM/TOP	536870912 bit	1.7 V			e1			NOR TYPE		9.2 mm		80 ns	1.8
S29NS256R0SBJW000	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	80 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified		TOP	268435456 bit	1.7 V						NOR TYPE	.00004 Amp	7.7 mm	YES	80 ns	1.8	NO
S29NS256NBJW002	Infineon Technologies	FLASH	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16MX16	16M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	3	1.95 V	1 mm		66 MHz	9.95 mm	Not Qualified		BOTTOM/TOP	268435456 bit	1.7 V			e1			NOR TYPE		10.95 mm			1.8
S29NS064J0PBJW003	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,32K	60 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-25 Cel	4,127	YES	TIN SILVER COPPER NICKEL	YES	BOTTOM	R-PBGA-B44	3	1.95 V	1 mm			8 mm	Not Qualified	45 ms	TOP	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e2	40	260	NOR TYPE	.00004 Amp	9.2 mm	YES	65 ns	1.8
S29NS256N0SBJW000	Infineon Technologies	FLASH	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	60 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,12X18,20		Flash Memories		.5 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES	TIN SILVER COPPER NICKEL	YES	BOTTOM	R-PBGA-B48	3	1.95 V	1 mm			9.95 mm	Not Qualified		TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e2	40	260	NOR TYPE	.00007 Amp	10.95 mm	YES	80 ns	1.8	YES
S29NS512P0SBJW003	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	64K	80 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,8X14,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-25 Cel	512	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64		1.95 V	1 mm			8 mm	Not Qualified			536870912 bit	1.7 V			e1			NOR TYPE	.00007 Amp	9.2 mm	YES	80 ns	1.8	YES
S29NS128NBJW002	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		8MX16	8M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B44	3	1.95 V	1 mm		66 MHz	8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	1.7 V			e1			NOR TYPE		9.2 mm			1.8
S29NS128RAABJW000	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	80 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES		YES	BOTTOM	R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified		TOP	134217728 bit	1.7 V						NOR TYPE	.00004 Amp	7.7 mm	YES	80 ns	1.8	NO
S29NS512PABBJW003	Infineon Technologies	FLASH	COMMERCIAL EXTENDED	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	64K	80 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,8X14,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-25 Cel	512	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64		1.95 V	1 mm			8 mm	Not Qualified		BOTTOM/TOP	536870912 bit	1.7 V			e1			NOR TYPE	.00007 Amp	9.2 mm	YES	80 ns	1.8	YES
S29NS256R0PBJW000	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	80 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified		TOP	268435456 bit	1.7 V						NOR TYPE	.00004 Amp	7.7 mm	YES	80 ns	1.8	NO
S29NS256P0SBJW003	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16MX16	16M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3	1.95 V	1 mm			6.2 mm			TOP	268435456 bit	1.7 V			e1	40	260	NOR TYPE		7.7 mm		80 ns	1.8
S29NS512P0SBJW00	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		32MX16	32M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64		1.95 V	1 mm			8 mm	Not Qualified			536870912 bit	1.7 V			e1			NOR TYPE		9.2 mm		80 ns	1.8
S29NS512R0SBJW000	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	64K	80 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,8X14,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-25 Cel	512	YES		YES	BOTTOM	R-PBGA-B64		1.95 V	1 mm			8 mm	Not Qualified			536870912 bit	1.7 V						NOR TYPE	.00004 Amp	9.2 mm	YES	80 ns	1.8	NO
S29NS512P0PBJW30	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B64		1.95 V	1 mm			8 mm	Not Qualified			536870912 bit	1.7 V						NOR TYPE		9.2 mm		80 ns	1.8
S29NS256N0SBJW002	Infineon Technologies	FLASH	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	60 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,12X18,20		Flash Memories		.5 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES	TIN SILVER COPPER NICKEL	YES	BOTTOM	R-PBGA-B48	3	1.95 V	1 mm			9.95 mm	Not Qualified		TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e2	40	260	NOR TYPE	.00007 Amp	10.95 mm	YES	80 ns	1.8	YES
S29NS128R0SBJW000	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	80 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES		YES	BOTTOM	R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified		TOP	134217728 bit	1.7 V						NOR TYPE	.00004 Amp	7.7 mm	YES	80 ns	1.8	NO
S29NS256R0SBJW003	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	80 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified		TOP	268435456 bit	1.7 V						NOR TYPE	.00004 Amp	7.7 mm	YES	80 ns	1.8	NO
S29NS256R0PBJW003	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	80 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified		TOP	268435456 bit	1.7 V						NOR TYPE	.00004 Amp	7.7 mm	YES	80 ns	1.8	NO
S29NS256NBJW000	Infineon Technologies	FLASH	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16MX16	16M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	3	1.95 V	1 mm		66 MHz	9.95 mm	Not Qualified		BOTTOM/TOP	268435456 bit	1.7 V			e1			NOR TYPE		10.95 mm			1.8
S29NS128NBJW000	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		8MX16	8M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B44	3	1.95 V	1 mm		66 MHz	8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	1.7 V			e1			NOR TYPE		9.2 mm			1.8
S29NS256RAABJW000	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	80 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified		TOP	268435456 bit	1.7 V						NOR TYPE	.00004 Amp	7.7 mm	YES	80 ns	1.8	NO
S29NS256P0PBJW000	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16MX16	16M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3	1.95 V	1 mm			6.2 mm			TOP	268435456 bit	1.7 V			e1	40	260	NOR TYPE		7.7 mm		80 ns	1.8
S29NS128N0SBJW003	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	60 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES	TIN SILVER COPPER NICKEL	YES	BOTTOM	R-PBGA-B44	3	1.95 V	1 mm			8 mm	Not Qualified		TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e2	40	260	NOR TYPE	.00007 Amp	9.2 mm	YES	80 ns	1.8	YES
S29NS064J0LBAW003	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,32K	60 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-25 Cel	4,127	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B44	3	1.95 V	1 mm			8 mm	Not Qualified	80 ms	TOP	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE	.00004 Amp	9.2 mm	YES	70 ns	1.8
S29NS128R0SBJW003	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	80 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES		YES	BOTTOM	R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified		TOP	134217728 bit	1.7 V						NOR TYPE	.00004 Amp	7.7 mm	YES	80 ns	1.8	NO
S29NS512R0SBJW003	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	64K	80 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,8X14,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-25 Cel	512	YES		YES	BOTTOM	R-PBGA-B64		1.95 V	1 mm			8 mm	Not Qualified			536870912 bit	1.7 V						NOR TYPE	.00004 Amp	9.2 mm	YES	80 ns	1.8	NO
S29PL064J60BFW152	Infineon Technologies	FLASH	OTHER	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-25 Cel	16,126	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B56	3	3.6 V	1 mm			7 mm	Not Qualified		BOTTOM/TOP	67108864 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	9 mm	YES	60 ns	3	YES
S29PL127J70TFI000	Infineon Technologies	FLASH	INDUSTRIAL	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	TSSOP56,.8,20		Flash Memories		.8 mm	85 Cel		8MX16	8M	-40 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1 mm			8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	11 mm	YES	70 ns	3	YES
S34MS04G204GHI003	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		256MX16	256M	-40 Cel					BOTTOM	R-PBGA-B67		1.95 V	1 mm			6.5 mm				4294967296 bit	1.7 V						SLC NAND TYPE		8 mm			1.8
S29PL127J65BFW13	Infineon Technologies	FLASH	OTHER	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8388608 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		8MX16	8M	-25 Cel					BOTTOM	R-PBGA-B80		3.6 V	1 mm			8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK					NOR TYPE		11 mm		65 ns	3
S29JL064J70BHI000	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	8K,64K	45 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B48		3.6 V	1 mm			6.15 mm	Not Qualified		BOTTOM/TOP	67108864 bit	2.7 V	TOP BOOT BLOCK, BOTTOM BOOT BLOCK					NOR TYPE	.000005 Amp	8.15 mm	YES	70 ns	3	YES
S29AL016J70BFN040	Infineon Technologies	FLASH	AUTOMOTIVE	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3	3.6 V	1 mm			6.15 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e1	40	260	NOR TYPE	.000005 Amp	8.15 mm		70 ns	3	YES
S29PL127J70BFI041	Infineon Technologies	FLASH		80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32			20	.8 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B80		3.6 V	1 mm	100000 Write/Erase Cycles		8 mm		.00007 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	11 mm	YES	70 ns	3	YES
S34MS01G204BHI003	Infineon Technologies	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		64MX16	64M	-40 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			1073741824 bit	1.7 V		1K				SLC NAND TYPE	.00005 Amp	11 mm		45 ns	1.8	NO
S29PL127N65GAW002	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		8MX16	8M	-25 Cel			TIN LEAD		BOTTOM	R-PBGA-B64	3	3.1 V	1 mm			8 mm	Not Qualified			134217728 bit	2.7 V			e0			NOR TYPE		11.6 mm		65 ns	3
S29AL008J55BFNR23	Infineon Technologies	FLASH	AUTOMOTIVE	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	12 mA	524288 words	3.3	YES	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3	3.6 V	1 mm			6.15 mm	Not Qualified		BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK		e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	55 ns	3	YES
S34MS01G204GHI010	Infineon Technologies	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		64MX16	64M	-40 Cel					BOTTOM	R-PBGA-B67		1.95 V	1 mm			6.5 mm				1073741824 bit	1.7 V						SLC NAND TYPE		8 mm			1.8
S29PL129N65GFW002	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		8MX16	8M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3	3.1 V	1 mm			8 mm	Not Qualified			134217728 bit	2.7 V			e1			NOR TYPE		11.6 mm		65 ns	3
S29PL127J60TFA063	Infineon Technologies	FLASH		64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X12,32			20	.8 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1 mm	100000 Write/Erase Cycles		8 mm		.00006 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	11.6 mm	YES	60 ns	3	YES
S29PL127J70BFI042	Infineon Technologies	FLASH		80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32			20	.8 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B80		3.6 V	1 mm	100000 Write/Erase Cycles		8 mm		.00007 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	11 mm	YES	70 ns	3	YES
S29PL032J60BFI070	Infineon Technologies	FLASH		48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	2097152 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32			20	.8 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B48	3	3.6 V	1 mm	100000 Write/Erase Cycles		6.15 mm		.00006 ms	BOTTOM/TOP	33554432 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	8.15 mm	YES	60 ns	3	YES
S29PL064J55BFI150	Infineon Technologies	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	16,126	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B56	3	3.6 V	1 mm			7 mm	Not Qualified		BOTTOM/TOP	67108864 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	9 mm	YES	55 ns	3	YES
S29AL016J70BHN042	Infineon Technologies	FLASH	AUTOMOTIVE	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		1MX16	1M	-40 Cel					BOTTOM	R-PBGA-B48		3.6 V	1 mm			6.15 mm			BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		8.15 mm		70 ns	3
S34ML02G104BHI000	Infineon Technologies	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	40 mA	134217728 words	3.3	NO	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX16	128M	-40 Cel	2K	YES		YES	BOTTOM	R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			2147483648 bit	2.7 V		1K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	3	NO
S29PL127J70TFI042	Infineon Technologies	FLASH		80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32			20	.8 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B80		3.6 V	1 mm	100000 Write/Erase Cycles		8 mm		.00007 ms	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	11 mm	YES	70 ns	3	YES
S29PL127J60TFW002	Infineon Technologies	FLASH	OTHER	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	TSSOP56,.8,20		Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1 mm			8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	11 mm	YES	60 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.