RECTANGULAR Flash Memory 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S34MS16G202BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2147483648 words	1.8			8	GRID ARRAY, THIN PROFILE, FINE PITCH		4			.8 mm	85 Cel		2GX8	2G	-40 Cel					BOTTOM			R-PBGA-B63	3	1.95 V	1.2 mm			9 mm					17179869184 bit	1.7 V					260	SLC NAND TYPE		11 mm			1.8
SDCIT2/8GBSP	Kingston Technology Company	FLASH CARD				RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD					8589934592 words	3.3			8	UNCASED CHIP						85 Cel		8GX8	8G	-40 Cel					UPPER			R-XUUC-N				30000 Write/Erase Cycles							68719476736 bit							SLC NAND TYPE					3.3
SST26VF032B-104I/TD	Microchip Technology	EEPROM	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		30 mA	4194304 words	3		3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40		Flash Memories	100	1 mm	85 Cel		4MX8	4M	-40 Cel			TIN SILVER COPPER		BOTTOM	1	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified		SPI		33554432 bit	2.7 V			e1			NOR TYPE	.000045 Amp	8 mm			3
M25P10-AVMN6TP	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	131072 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.25		EEPROMs	20	1.27 mm	85 Cel		128KX8	128K	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified		SPI		1048576 bit	2.7 V	40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST		e4			NOR TYPE	.000005 Amp	4.9 mm			2.7
M29W640GH70ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM			R-PBGA-B48		3.6 V	1.2 mm			6 mm	Not Qualified				67108864 bit	2.7 V		4/8	e1			NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
MT29F4G08ABADAWP-IT:DTR	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		512MX8	512M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm					4294967296 bit	2.7 V			e3	30	260	SLC NAND TYPE		18.4 mm			3.3
MTFC8GAKAJCN-1MWTTR	Micron Technology	FLASH CARD	COMMERCIAL EXTENDED	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	OPEN-DRAIN	8GX8	8G	-25 Cel					BOTTOM			R-PBGA-B153		3.6 V	1 mm		52 MHz	11.5 mm					68719476736 bit	2.7 V				30	260	MLC NAND TYPE		13 mm
S26KS512SDPBHM020	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, VERY THIN PROFILE					1 mm	125 Cel		64MX8	64M	-40 Cel					BOTTOM			R-PBGA-B24	3	1.95 V	1 mm			6 mm					536870912 bit	1.7 V								8 mm		96 ns	1.8
SDINBDG4-16G-XI2	Western Digital	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		16GX8	16G	-40 Cel					BOTTOM			R-PBGA-B153		3.6 V	.8 mm	3000 Write/Erase Cycles		11 mm					137438953472 bit	2.7 V						MLC NAND TYPE		13.5 mm
SST25VF016B-50-4I-QAF	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		30 mA	16777216 words			3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL	1	SOFTWARE	R-XDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified		SPI		16777216 bit	2.7 V			e4			NOR TYPE	.00002 Amp	6 mm
AM29F010B-70JI	Intel	FLASH		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6			20	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES			QUAD			R-PQCC-J32		5.5 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm		.00007 ms			1048576 bit	4.5 V						NOR TYPE	.000005 Amp	13.97 mm		70 ns	5	YES
AT25SF128A-MHB-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		20 mA	16777216 words				8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.6 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI		134217728 bit	2.7 V			e4	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000025 Amp	6 mm
AT25SF641-MHB-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			67108864 words	1.8			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		64MX1	64M	-40 Cel					DUAL			R-PDSO-N8	1	1.95 V	.6 mm		104 MHz	5 mm					67108864 bit	1.65 V								6 mm			2.7
MT29F2G08ABAEAH4-IT:ETR	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B63		3.6 V	1 mm			9 mm					2147483648 bit	2.7 V			e1	30	260	SLC NAND TYPE		11 mm			2.7
S29GL512P10TFIR10	Cypress Semiconductor	FLASH	INDUSTRIAL	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	110 mA	536870912 words	3.3	YES	3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		512MX1	512M	-40 Cel	512	YES	MATTE TIN	YES	DUAL			R-PDSO-G56	3	3.6 V	1.2 mm			14 mm	Not Qualified				536870912 bit	3 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	100 ns	3	YES
SST39VF040-70-4I-NHE	Microchip Technology	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	4K	30 mA	524288 words	3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	100	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	128	YES	MATTE TIN		QUAD	1		R-PQCC-J32	3	3.6 V	2.8448 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified				4194304 bit	2.7 V			e3		245	NOR TYPE	.000015 Amp	13.97 mm		70 ns	3	YES
M29W160EB70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN/TIN BISMUTH	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e3/e6	NOT SPECIFIED	260	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
S25FL512SAGBHIC13	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	64094208 words	3		3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4	Flash Memories	20	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified		SPI		512753664 bit	2.7 V			e1			NOR TYPE	.0003 Amp	8 mm			3
SST25VF032B-80-4I-S2AF-T	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL			30 mA	4194304 words			3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel		4MX8	4M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				100000 Write/Erase Cycles	80 MHz		Not Qualified		SPI		33554432 bit				e4			NOR TYPE	.00002 Amp
AM29F400BT-90ED	Spansion	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,7	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	5.5 V	1.2 mm	1000000 Write/Erase Cycles		12 mm	Not Qualified			TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm		90 ns	5	YES
IS25LP080D-JNLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE		1			1.27 mm	105 Cel		1MX8	1M	-40 Cel			TIN		DUAL			R-PDSO-G8	1	3.6 V	1.75 mm		133 MHz	3.9 mm					8388608 bit	2.3 V			e3	10	260			4.9 mm			3
M25P10-AVMN6P	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	131072 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.25		EEPROMs	20	1.27 mm	85 Cel		128KX8	128K	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified		SPI		1048576 bit	2.7 V	40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST		e4			NOR TYPE	.000005 Amp	4.9 mm			2.7
MT25QU512ABB8ESF-0AAT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			536870912 words	1.8			1	SMALL OUTLINE					1.27 mm	105 Cel		512MX1	512M	-40 Cel					DUAL			R-PDSO-G16		2 V	2.65 mm		166 MHz	7.5 mm					536870912 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		10.3 mm			1.8
MT29F8G08ABBCAH4-IT:C	Micron Technology	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		256K	20 mA	1073741824 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		1GX8	1G	-40 Cel	4K	YES		YES	BOTTOM			R-PBGA-B63							Not Qualified				8589934592 bit			4K				SLC NAND TYPE	.00005 Amp			30 ns	1.8	NO
MTFC32GAPALNA-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words		NO		8	GRID ARRAY, THIN PROFILE	BGA100,10X15,40				1 mm	105 Cel		32GX8	32G	-40 Cel		NO	TIN SILVER COPPER	YES	BOTTOM		HARDWARE	R-PBGA-B100		3.6 V	1.2 mm		200 MHz	14 mm					274877906944 bit	2.7 V			e1	30	260	NAND TYPE		18 mm			2.7	NO
MTFC32GJDDQ-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL										GRID ARRAY, LOW PROFILE					1 mm								TIN SILVER COPPER		BOTTOM			R-PBGA-B100			1.4 mm			14 mm									e1			MLC NAND TYPE		18 mm			3.3
MX60LF8G18AC-TI	Macronix	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1073741824 words	3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		1GX8	1G	-40 Cel			TIN		DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm					8589934592 bit	2.7 V			e3			SLC NAND TYPE		18.4 mm			3
AT45DB642D-CNU-SL955	Atmel	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	67108864 words	3		3/3.3	1	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		64MX1	64M	-40 Cel			Matte Tin (Sn)		DUAL		HARDWARE	R-XDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	66 MHz	6 mm	Not Qualified		SPI		67108864 bit	2.7 V	ORGANIZED AS 8192 PAGES OF 1024 BYTES EACH		e3			NOR TYPE	.000015 Amp	8 mm			2.7
M25P32-VMW6TG	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	4194304 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		4MX8	4M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.5 mm	100000 Write/Erase Cycles	20 MHz	5.62 mm	Not Qualified		SPI		33554432 bit	2.7 V			e4			NOR TYPE	.00001 Amp	5.62 mm			2.7
S25FL512SAGBHVA10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	64094208 words	3		3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4	Flash Memories	20	1 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified		SPI		512753664 bit	2.7 V			e1			NOR TYPE	.0003 Amp	8 mm			3
SDCIT2/32GBSP	Kingston Technology Company	FLASH CARD				RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD					34359738368 words	3.3			8	UNCASED CHIP						85 Cel		32GX8	32G	-40 Cel					UPPER			R-XUUC-N				30000 Write/Erase Cycles							274877906944 bit							SLC NAND TYPE					3.3
SST39SF040-70-4I-NHE	Microchip Technology	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	100	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	128	YES	MATTE TIN		QUAD	1		R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified				4194304 bit	4.5 V			e3		245	NOR TYPE	.0001 Amp	13.97 mm		70 ns	5	YES
SST39VF040-70-4I-NHE-T	Microchip Technology	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	4K	30 mA	524288 words	3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	100	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	128	YES	MATTE TIN		QUAD	1		R-PQCC-J32	3	3.6 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified				4194304 bit	2.7 V			e3		245	NOR TYPE	.000015 Amp	13.97 mm		70 ns	3	YES
AT45DB161E-SSHD-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		26 mA	16777216 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		16MX1	16M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	85 MHz	3.9 mm	Not Qualified		SPI		16777216 bit	2.5 V			e4		260	NOR TYPE	.00001 Amp	4.925 mm			2.7
M25P80-VMN3TPB	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		15 mA	8388608 words			3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		8MX1	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	15 ms	SPI		8388608 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	4.9 mm			2.7
M28W160CB70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES	TIN/TIN BISMUTH		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V			e3/e6	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	NO
S34ML02G100TFI003	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	268435456 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified				2147483648 bit	2.7 V		2K	e3	30	260	SLC NAND TYPE	.00005 Amp	18.4 mm		25 ns	3	NO
SDCS2/128GB	Kingston Technology Company	FLASH CARD	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD					137438953472 words	3.3			8	UNCASED CHIP						85 Cel		128GX8	128G	-25 Cel					UPPER			R-XUUC-N			1 mm			11 mm					1099511627776 bit							NOR TYPE		15 mm			3.3
W25N02KVZEIR	Winbond Electronics	FLASH		8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		35 mA	268435456 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			10	1.27 mm	85 Cel	3-STATE	256MX8	256M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.8 mm	60000 Write/Erase Cycles	104 MHz	6 mm			SPI		2147483648 bit	2.7 V						SLC NAND TYPE	.00005 Amp	8 mm			3
AT25SF081B-SSHB-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16 mA	1048576 words	3			8	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	108 MHz	3.9 mm			SPI		8388608 bit	2.7 V						NOR TYPE	.00003 Amp	4.925 mm			3
IS25LP128-JLLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		14 mA	134217728 words	3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	1		20	1.27 mm	105 Cel		128MX1	128M	-40 Cel			Tin (Sn)		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	2.3 V			e3	10	260	NOR TYPE	.00006 Amp	8 mm			2.7
M25P40-VMN6TP	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	524288 words	3		2.5/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified		SPI		4194304 bit	2.7 V	40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST		e4	40	260	NOR TYPE	.00001 Amp	4.9 mm			2.7
S29GL064S70TFI070	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		8MX8	8M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			14 mm					67108864 bit	2.7 V			e3					18.4 mm		70 ns	3
S29GL256P11TFI010	Infineon Technologies	FLASH	INDUSTRIAL	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	110 mA	268435456 words	3	YES	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		256MX1	256M	-40 Cel	256	YES	MATTE TIN	YES	DUAL			R-PDSO-G56	3	3.6 V	1.2 mm			14 mm	Not Qualified				268435456 bit	2.7 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	110 ns	3	YES
SST25PF020B-80-4C-SAE	Microchip Technology	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	2097152 words			2.5/3.3	1	SMALL OUTLINE	SOP8,.23		Flash Memories	100	1.27 mm	70 Cel	3-STATE	2MX1	2M	0 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified		SPI		2097152 bit	2.3 V			e3	40	260	NOR TYPE	.00003 Amp	4.9 mm
EMMC16G-TB29-90F01	Kingston Technology Company	FLASH CARD			BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS			17179869184 words				8	GRID ARRAY								16GX8	16G						BOTTOM			R-PBGA-B											137438953472 bit							TLC NAND TYPE
IS25LP128F-RHLE-TR	Integrated Silicon Solution	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		30 mA	16777216 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1		20	1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	166 MHz	6 mm			SPI		134217728 bit	2.7 V	ALSO OPERATES WITH 133MHZ @ 2.3VMIN SUPPLY					NOR TYPE	.00007 Amp	8 mm			3
S29JL064J70TFI003	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	8K,64K	45 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	16,126	YES		YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM/TOP	67108864 bit	2.7 V	TOP BOOT BLOCK, BOTTOM BOOT BLOCK					NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.