RECTANGULAR Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S70FL01GSAGBHIC10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		200 mA	134217728 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		1073741824 bit	2.7 V						NOR TYPE	.0002 Amp	8 mm			3
AT25DF041B-SSHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			4194304 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel		4MX1	4M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8	1	3.6 V	1.75 mm		104 MHz	3.9 mm					4194304 bit	1.65 V			e4		260	NOR TYPE		4.925 mm			1.8
AT45DB081E-SHNHC-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16 mA	1048576 words	3		1.8/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.24 mm	Not Qualified		SPI		8388608 bit	2.3 V	IT ALSO OPERATES WITH 1.7V MIN WITH 85 MHZ FREQUENCY;256K-BIT EXTRA FLASH AVAILABLE		e4			NOR TYPE	.00004 Amp	5.29 mm			3
GLS29EE512-70-4I-NHE	Greenliant Systems	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS			65536 words	5			8	CHIP CARRIER					1.27 mm	85 Cel		64KX8	64K	-40 Cel					QUAD			R-PQCC-J32	3	5.5 V	3.556 mm			11.43 mm		10 ms			524288 bit	4.5 V								13.97 mm		70 ns	5
M25P16-VMW6TG	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.5 mm	100000 Write/Erase Cycles	75 MHz	5.62 mm	Not Qualified	15 ms	SPI		16777216 bit	2.7 V			e4			NOR TYPE	.00001 Amp	5.3 mm			2.7
MT25QL512ABB8E12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					536870912 bit	2.7 V			e1			NOR TYPE		8 mm			3
MTFC8GAMALBH-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		8GX8	8G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B153		3.6 V	1.2 mm			11.5 mm					68719476736 bit	2.7 V			e1	30	260	NAND TYPE		13 mm			2.7
MX25L3233FM2I-08Q	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		17 mA	4194304 words	3			8	SMALL OUTLINE	SOP8,.3	4		20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.23 mm			SPI		33554432 bit	2.65 V	ALSO ORGANISED AS 32MX1			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	5.28 mm			3
MX25L8006EM2I-12G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	4194304 words	3		3/3.3	2	SMALL OUTLINE	SOP8,.3	1	Flash Memories	20	1.27 mm	85 Cel		4MX2	4M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	86 MHz	5.23 mm	Not Qualified		SPI		8388608 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	5.28 mm			2.7
N25Q256A13ESF40F	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	268435456 words	3		3/3.3	1	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		256MX1	256M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI		268435456 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	10.3 mm			3
S25FL116K0XMFI040	Infineon Technologies	FLASH		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	2097152 words	3			8	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	108 MHz	3.9 mm			SPI		16777216 bit	2.7 V						NOR TYPE	.000005 Amp	4.9 mm			3
S25FL512SAGMFIR13	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	64094208 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4	4	Flash Memories	20	1.27 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified		SPI		512753664 bit	2.7 V			e3	30	260	NOR TYPE	.0003 Amp	10.3 mm			3
S29GL01GP11TFIR10	Cypress Semiconductor	FLASH	INDUSTRIAL	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	110 mA	1073741824 words	3.3	YES	3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		1GX1	1G	-40 Cel	1K	YES	Matte Tin (Sn)	YES	DUAL			R-PDSO-G56	3	3.6 V	1.2 mm			14 mm	Not Qualified				1073741824 bit	3 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	110 ns	3	YES
SST38VF6401-90-5I-B3KE-T	Microchip Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K	50 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM	1		R-PBGA-B48		3.6 V	1.2 mm	100000 Write/Erase Cycles		6 mm	Not Qualified			BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK	4	e1			NOR TYPE	.00003 Amp	8 mm	YES	90 ns	3	YES
W25N01GWZEIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			134217728 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		128MX8	128M	-40 Cel					DUAL			R-PDSO-N8		1.95 V	.8 mm		104 MHz	6 mm					1073741824 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		8 mm			1.8
EMMC16G-IB29-PZ90	Kingston Technology Company	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		16GX8	16G	-40 Cel		NO			BOTTOM			R-PBGA-B153		3.6 V	.8 mm	3000 Write/Erase Cycles	200 MHz	11.5 mm					137438953472 bit	2.7 V						TLC NAND TYPE		13 mm			3.3	NO
M25P128-VME6TGB	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		20 mA	16777216 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	10000 Write/Erase Cycles	50 MHz	6 mm	Not Qualified		SPI		134217728 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	8 mm			2.7
MT25QL128ABA8E12-0AAT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		35 mA		3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel		16MX8	16M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	2.7 V				30	260	NOR TYPE	.00008 Amp	8 mm			3
MT29F16G08ABABAWP-IT:B	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	512K	50 mA	2147483648 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		2GX8	2G	-40 Cel	4K	YES	Matte Tin (Sn)	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified				17179869184 bit	2.7 V		4K	e3	30	260	SLC NAND TYPE	.00005 Amp	18.4 mm		20 ns	2.7	NO
MT29F256G08AUCABH3-10ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA			NO	1.8,3/3.3		GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	85 Cel				-40 Cel	32K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified				274877906944 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
S25FL128SAGNFV000	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		100 mA	33554432 words	3		3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	2	Flash Memories	20	1.27 mm	105 Cel		32MX4	32M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	134217728 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1		e3			NOR TYPE	.0003 Amp	8 mm			3
S25FL256SAGBHBA00	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	3			4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		64MX4	64M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B24	3	3.6 V	1.2 mm		133 MHz	6 mm		500 ms			268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1		e1					8 mm			3
IS25LQ040B-JNLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			524288 words	3			8	SMALL OUTLINE		1			1.27 mm	105 Cel		512KX8	512K	-40 Cel			TIN		DUAL			R-PDSO-G8		3.6 V	1.75 mm		104 MHz	3.9 mm					4194304 bit	2.3 V	CLOCK FREQUENCY FOR READ MODE 33 MHZ		e3	30	260	NOR TYPE		4.9 mm			3
MT25QU512ABB8ESF-0SIT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			536870912 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel		512MX1	512M	-40 Cel					DUAL			R-PDSO-G16		2 V	2.5 mm		166 MHz	7.5 mm					536870912 bit	1.7 V				30	260	NOR TYPE		10.3 mm			1.8
MT29F2G08ABAEAWP:ETR	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		256MX8	256M	0 Cel			MATTE TIN		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm					2147483648 bit	2.7 V			e3	30	260	SLC NAND TYPE		18.4 mm			2.7
MT29F8G01ADAFD12-AAT:F	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		35 mA	1073741824 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2		10	1 mm	105 Cel	3-STATE	1GX8	1G	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		8589934592 bit	2.7 V	CONFIGURABLE AS 8G X 1					SLC NAND TYPE	.00005 Amp	8 mm			3.3
S25FL128LAGBHV020	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	2.7 V						NOR TYPE	.00006 Amp	8 mm			3
S25FL512SAGMFIG13	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	64094208 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4	4	Flash Memories	20	1.27 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified		SPI		512753664 bit	2.7 V			e3	30	260	NOR TYPE	.0003 Amp	10.3 mm			3
SDINBDG4-16G-I2	Western Digital	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		16GX8	16G	-25 Cel					BOTTOM			R-PBGA-B153		3.6 V	.8 mm	3000 Write/Erase Cycles		11 mm					137438953472 bit	2.7 V						MLC NAND TYPE		13.5 mm
SST26VF032BEUI-104I/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	33554432 words	3			1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	85 Cel	3-STATE	32MX1	32M	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm			SPI		33554432 bit	2.7 V						NOR TYPE	.000045 Amp	5.26 mm			3
AM29F040B-55JF	Spansion	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel		512KX8	512K	-40 Cel	8	YES	MATTE TIN		QUAD			R-PQCC-J32	3	5.25 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified				4194304 bit	4.75 V			e3	40	260	NOR TYPE	.000005 Amp	13.97 mm		55 ns	5	YES
M25P80-VMN6P	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	1048576 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		1MX8	1M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified	15 ms	SPI		8388608 bit	2.7 V			e4			NOR TYPE	.00001 Amp	4.9 mm			2.7
MT25QU01GBBB8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, THIN PROFILE		1			1 mm	125 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B24	3	2 V	1.2 mm		166 MHz	6 mm					1073741824 bit	1.7 V			e1	30	260			8 mm			1.8
MT25QU128ABA8E12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		128MX1	128M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					134217728 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MTFC32GAZAQDW-AAT	Micron Technology	FLASH CARD		100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40				1 mm	105 Cel		32GX8	32G	-40 Cel					BOTTOM			R-PBGA-B100		3.6 V	1.5 mm		200 MHz	14 mm					274877906944 bit	2.7 V						NAND TYPE		18 mm			3.3
S25FL128SAGBHIA10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	33554432 words	3		3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel		32MX4	32M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI		134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1					NOR TYPE	.0001 Amp	8 mm			3
S34MS01G200BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM			R-PBGA-B63	3	1.95 V	1 mm			9 mm					1073741824 bit	1.7 V					260	SLC NAND TYPE		11 mm			1.8
AM29F040B-70JF\T	Spansion	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS			524288 words	5			8	CHIP CARRIER					1.27 mm	85 Cel		512KX8	512K	-40 Cel			MATTE TIN		QUAD			R-PQCC-J32		5.5 V	3.55 mm			11.43 mm	Not Qualified				4194304 bit	4.5 V			e3			NOR TYPE		13.97 mm		70 ns	5
AT25SF641B-MHB-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		19 mA	67108864 words	3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	85 Cel	3-STATE	64MX1	64M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.6 mm	100000 Write/Erase Cycles	104 MHz	5 mm			SPI		67108864 bit	2.7 V			e4		260	NOR TYPE	.000025 Amp	6 mm			3
MT29F2G01ABAGDWB-IT:G	Micron Technology	FLASH		8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		35 mA	268435456 words	3.3			8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.3			10	1.27 mm	85 Cel		256MX8	256M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.65 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		2147483648 bit	2.7 V				30	260	SLC NAND TYPE	.00005 Amp	8 mm			3.3
MX29F800CTTI-70G	Macronix	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	50 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL			R-PDSO-G48		5.5 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			TOP	8388608 bit	4.5 V	TOP BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	18.4 mm		70 ns	5	YES
S25FL256SAGBHIA10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3		3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel		64MX4	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1		e1			NOR TYPE	.0001 Amp	8 mm			3
S70FL01GSAGMFI010	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		200 mA	134217728 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified		SPI		1073741824 bit	2.7 V			e3		260	NOR TYPE	.0002 Amp	10.3 mm			3
IS25LP032D-JNLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			4194304 words	3			8	SMALL OUTLINE					1.27 mm	105 Cel		4MX8	4M	-40 Cel					DUAL			R-PDSO-G8		3.6 V	1.75 mm		133 MHz	3.9 mm					33554432 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED			4.9 mm			3
MT25QL128ABB8ESF-0AUT	Micron Technology	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		35 mA	16777216 words	3			8	SMALL OUTLINE	SOP16,.4	1			1.27 mm	125 Cel		16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		134217728 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0002 Amp	10.3 mm			3
MT28FW02GBBA1HPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	105 Cel		128MX16	128M	-40 Cel					BOTTOM			R-PBGA-B64		3.6 V	1.4 mm			11 mm					2147483648 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm		105 ns	3
MTFC32GAPALBH-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B153		3.6 V	1.2 mm			11.5 mm					274877906944 bit	2.7 V			e1	30	260			13 mm			2.7
MX25U51245GXDI00	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		40 mA	67108864 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	166 MHz	6 mm			SPI		536870912 bit	1.65 V			e1			NOR TYPE	.00005 Amp	8 mm			1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.