SQUARE Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29GL032N90DFIS10	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8			1 mm	85 Cel		2MX16	2M	-40 Cel		NO		YES	BOTTOM		S-PBGA-B64		3.6 V	1.4 mm			9 mm					33554432 bit	2.7 V						NOR TYPE		9 mm		90 ns	3	NO
S29GL064N90DFIS10	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8			1 mm	85 Cel		4MX16	4M	-40 Cel		NO		YES	BOTTOM		S-PBGA-B64		3.6 V	1.4 mm			9 mm					67108864 bit	2.7 V						NOR TYPE		9 mm		90 ns	3	NO
S29GL032N90DFIS22	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8			1 mm	85 Cel		2MX16	2M	-40 Cel		NO		YES	BOTTOM		S-PBGA-B64		3.6 V	1.4 mm			9 mm					33554432 bit	2.7 V						NOR TYPE		9 mm		90 ns	3	NO
S28HS01GTGZBHM030	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS			1073741824 words	1.8			1	GRID ARRAY						125 Cel		1GX1	1G	-40 Cel					BOTTOM		S-PBGA-B24	3	2 V			200 MHz				SPI		1073741824 bit	1.7 V						NOR TYPE					1.8
S29GL01GS13DAEV13	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	60 mA	67108864 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			20	1 mm	125 Cel	3-STATE	64MX16	64M	-55 Cel	1K	YES		YES	BOTTOM		S-PBGA-B64		3.6 V	1.4 mm	100 Write/Erase Cycles		9 mm		.00006 ms			1073741824 bit	2.7 V		16				NOR TYPE	.0002 Amp	9 mm	YES	130 ns	3	YES
S29GL512S13DAEV10	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	60 mA	33554432 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			20	1 mm	125 Cel	3-STATE	32MX16	32M	-55 Cel	512	YES		YES	BOTTOM		S-PBGA-B64		3.6 V	1.4 mm	100 Write/Erase Cycles		9 mm		.00006 ms			536870912 bit	2.7 V		16				NOR TYPE	.0002 Amp	9 mm	YES	130 ns	3	YES
S29GL128S13DAEV23	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	60 mA	8388608 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			20	1 mm	125 Cel	3-STATE	8MX16	8M	-55 Cel	128	YES		YES	BOTTOM		S-PBGA-B64		3.6 V	1.4 mm	100 Write/Erase Cycles		9 mm		.00006 ms			134217728 bit	2.7 V		16				NOR TYPE	.0002 Amp	9 mm	YES	130 ns	3	YES
S26HL01GTFPBHI023	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm			SPI		1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm			3
S29GL064N90DFIS12	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8			1 mm	85 Cel		4MX16	4M	-40 Cel		NO		YES	BOTTOM		S-PBGA-B64		3.6 V	1.4 mm			9 mm					67108864 bit	2.7 V						NOR TYPE		9 mm		90 ns	3	NO
S29GL128S13DHEV20	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	60 mA	8388608 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			20	1 mm	125 Cel	3-STATE	8MX16	8M	-55 Cel	128	YES		YES	BOTTOM		S-PBGA-B64		3.6 V	1.4 mm	100 Write/Erase Cycles		9 mm		.00006 ms			134217728 bit	2.7 V		16				NOR TYPE	.0002 Amp	9 mm	YES	130 ns	3	YES
S26HS01GTGABHB023	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		2 V	1 mm	2560000 Write/Erase Cycles	200 MHz	8 mm			SPI		1073741824 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm			1.8
S26HL01GTFPBHA030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm			SPI		1073741824 bit	2.7 V						NOR TYPE		8 mm			3
S26HS02GTFPBHM050	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS			2147483648 words	1.8			1	GRID ARRAY						125 Cel		2GX1	2G	-40 Cel					BOTTOM		S-PBGA-B24	3	2 V			166 MHz						2147483648 bit	1.7 V						NOR TYPE					1.8
S28HL01GTFPBHI030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	134217728 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	300000 Write/Erase Cycles	166 MHz	8 mm			SPI		1073741824 bit	2.7 V						NOR TYPE	.00016 Amp	8 mm			3
S28HL01GTFPBHA030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		100 mA	134217728 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	300000 Write/Erase Cycles	166 MHz	8 mm			SPI		1073741824 bit	2.7 V						NOR TYPE	.00016 Amp	8 mm			3
S26HS01GTFPBHI020	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		2 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm			SPI		1073741824 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm			1.8
S29GL01GS13DAEV23	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	60 mA	67108864 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			20	1 mm	125 Cel	3-STATE	64MX16	64M	-55 Cel	1K	YES		YES	BOTTOM		S-PBGA-B64		3.6 V	1.4 mm	100 Write/Erase Cycles		9 mm		.00006 ms			1073741824 bit	2.7 V		16				NOR TYPE	.0002 Amp	9 mm	YES	130 ns	3	YES
S26HS01GTGABHV023	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		2 V	1 mm	2560000 Write/Erase Cycles	200 MHz	8 mm			SPI		1073741824 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm			1.8
S26HS01GTFPBHI030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		2 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm			SPI		1073741824 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm			1.8
S28HS01GTGZBHB030	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS			1073741824 words	1.8			1	GRID ARRAY						105 Cel		1GX1	1G	-40 Cel					BOTTOM		S-PBGA-B24	3	2 V			200 MHz				SPI		1073741824 bit	1.7 V						NOR TYPE					1.8
S28HS01GTGABHV030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		173 mA	134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	3-STATE	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		2 V	1 mm	300000 Write/Erase Cycles	200 MHz	8 mm			SPI		1073741824 bit	1.7 V						NOR TYPE	.000132 Amp	8 mm			1.8
S26HS01GTFPBHV020	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		2 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm			SPI		1073741824 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm			1.8
S29GL032N11DFIS20	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8			1 mm	85 Cel		2MX16	2M	-40 Cel		NO		YES	BOTTOM		S-PBGA-B64		3.6 V	1.4 mm			9 mm					33554432 bit	1.65 V						NOR TYPE		9 mm		110 ns	3	NO
S28HS01GTGABHI033	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		173 mA	134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		2 V	1 mm	300000 Write/Erase Cycles	200 MHz	8 mm			SPI		1073741824 bit	1.7 V						NOR TYPE	.00016 Amp	8 mm			1.8
S29GL032N11DFIS10	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8			1 mm	85 Cel		2MX16	2M	-40 Cel		NO		YES	BOTTOM		S-PBGA-B64		3.6 V	1.4 mm			9 mm					33554432 bit	1.65 V						NOR TYPE		9 mm		110 ns	3	NO
S29GL032N90DFIS13	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8			1 mm	85 Cel		2MX16	2M	-40 Cel		NO		YES	BOTTOM		S-PBGA-B64		3.6 V	1.4 mm			9 mm					33554432 bit	2.7 V						NOR TYPE		9 mm		90 ns	3	NO
S29GL01GT10DHA020	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		64MX16	64M	-40 Cel					BOTTOM		S-PBGA-B64	3	3.6 V	1.4 mm			9 mm					1073741824 bit	2.7 V	CAN ALSO ORGANISED AS 1GX1							9 mm		100 ns	2.7
S26HS01GTGABHI030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		2 V	1 mm	2560000 Write/Erase Cycles	200 MHz	8 mm			SPI		1073741824 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm			1.8
S29GL01GS13DHEV20	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	60 mA	67108864 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			20	1 mm	125 Cel	3-STATE	64MX16	64M	-55 Cel	1K	YES		YES	BOTTOM		S-PBGA-B64		3.6 V	1.4 mm	100 Write/Erase Cycles		9 mm		.00006 ms			1073741824 bit	2.7 V		16				NOR TYPE	.0002 Amp	9 mm	YES	130 ns	3	YES
S26HL01GTFPBHI030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm			SPI		1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm			3
S26HS02GTFPBHM040	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS			2147483648 words	1.8			1	GRID ARRAY						125 Cel		2GX1	2G	-40 Cel					BOTTOM		S-PBGA-B24	3	2 V			166 MHz						2147483648 bit	1.7 V						NOR TYPE					1.8
S29GL512S13DAEV13	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	60 mA	33554432 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			20	1 mm	125 Cel	3-STATE	32MX16	32M	-55 Cel	512	YES		YES	BOTTOM		S-PBGA-B64		3.6 V	1.4 mm	100 Write/Erase Cycles		9 mm		.00006 ms			536870912 bit	2.7 V		16				NOR TYPE	.0002 Amp	9 mm	YES	130 ns	3	YES
S29GL512S12DAE020	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	60 mA	33554432 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			20	1 mm	125 Cel	3-STATE	32MX16	32M	-55 Cel	512	YES		YES	BOTTOM		S-PBGA-B64		3.6 V	1.4 mm	100 Write/Erase Cycles		9 mm		.00006 ms			536870912 bit	2.7 V		16				NOR TYPE	.0002 Amp	9 mm	YES	120 ns	3	YES
S29GL512S10DKF013	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	60 mA	33554432 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			20	1 mm	105 Cel	3-STATE	32MX16	32M	-55 Cel	512	YES		YES	BOTTOM		S-PBGA-B64		3.6 V	1.4 mm	100 Write/Erase Cycles		9 mm		.00006 ms			536870912 bit	2.7 V		16				NOR TYPE	.0002 Amp	9 mm	YES	120 ns	3	YES
S29GL512S13DAEV20	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	60 mA	33554432 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			20	1 mm	125 Cel	3-STATE	32MX16	32M	-55 Cel	512	YES		YES	BOTTOM		S-PBGA-B64		3.6 V	1.4 mm	100 Write/Erase Cycles		9 mm		.00006 ms			536870912 bit	2.7 V		16				NOR TYPE	.0002 Amp	9 mm	YES	130 ns	3	YES
S29GL256S100DHI020	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			20	1 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES		YES	BOTTOM		S-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm		.00006 ms			268435456 bit	2.7 V		32				NAND TYPE	.0001 Amp	9 mm	YES	100 ns	3	YES
S26HS01GTFPBHA023	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		2 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm			SPI		1073741824 bit	1.7 V						NOR TYPE		8 mm			1.8
S29GL01GS120DHIV20	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			20	1 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM		S-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm		.00006 ms			1073741824 bit	2.7 V		32				NAND TYPE	.0001 Amp	9 mm	YES	120 ns	3	YES
S29GL512T10DHA023	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		32MX16	32M	-40 Cel					BOTTOM		S-PBGA-B64		3.6 V	1.4 mm			9 mm					536870912 bit	2.7 V	CAN ALSO BE ORGANISED AS 512MX1					NOR TYPE		9 mm		100 ns	2.7
S28HL01GTGABHB030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1		25	1 mm	105 Cel	3-STATE	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	2560000 Write/Erase Cycles	200 MHz	8 mm			SPI		1073741824 bit	2.7 V						NOR TYPE		8 mm			3
S29GL512T11DHV040	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	105 Cel		32MX16	32M	-40 Cel					BOTTOM		S-PBGA-B64		3.6 V	1.4 mm			9 mm				BOTTOM/TOP	536870912 bit	2.7 V						NOR TYPE		9 mm		110 ns	2.7
S29GL512T11DHAV23	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		32MX16	32M	-40 Cel					BOTTOM		S-PBGA-B64	3	3.6 V	1.4 mm			9 mm				BOTTOM/TOP	536870912 bit	2.7 V						NOR TYPE		9 mm		110 ns	2.7
S26HL01GTFPBHM010	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	125 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm			SPI		1073741824 bit	2.7 V						NOR TYPE		8 mm			3
S29GL01GT12DHV013	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	105 Cel		64MX16	64M	-40 Cel					BOTTOM		S-PBGA-B64		3.6 V	1.4 mm			9 mm					1073741824 bit	2.7 V	CAN ALSO ORGANISED AS 1GX1					NOR TYPE		9 mm		120 ns	2.7
S29GL064S80DHIV20	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	4194304 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		20	1 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	128			YES	BOTTOM		S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm					67108864 bit	2.7 V		8/16				NOR TYPE	.0001 Amp	9 mm		80 ns	3	YES
S29GL01GT13DHNV23	Infineon Technologies	FLASH	AUTOMOTIVE	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	125 Cel		64MX16	64M	-40 Cel					BOTTOM		S-PBGA-B64	3	3.6 V	1.4 mm			9 mm					1073741824 bit	2.7 V								9 mm		130 ns	2.7
S26HL01GTFPBHB033	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm			SPI		1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm			3
S29GL256S11DHIV10	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	33554432 words	3	YES	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		32MX8	32M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM		S-PBGA-B64	3	3.6 V	1.4 mm			9 mm	Not Qualified				268435456 bit	2.7 V		16	e1	30	260	NOR TYPE	.0001 Amp	9 mm	YES	110 ns	2.7	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.