SQUARE Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
S25HS02GTDPBHA053	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	2147483648 bit	1.7 V					NOR TYPE	.00004 Amp	8 mm	1.8
S25HS02GTFABHA053	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	130 mA	268435456 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	166 MHz	8 mm		SPI	2147483648 bit	1.7 V					NOR TYPE	.00004 Amp	8 mm	1.8
S25HL512TDPBHV010	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm		SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm	3
S25FL164K0XMFBQ13	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		16777216 words	3		4	SMALL OUTLINE		2			1.27 mm	105 Cel		16MX4	16M	-40 Cel		DUAL		S-PDSO-G8		3.6 V	2.159 mm			5.283 mm			67108864 bit	2.7 V	ALSO CONFIGURABLE AS 64M X 1		NOT SPECIFIED	NOT SPECIFIED			5.283 mm	3
S25HL512TDPBHB013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm		SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm	3
S25HS04GTDPBHA050	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	175 mA	4294967296 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	3-STATE	512MX8	512M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	4294967296 bit	1.7 V					NOR TYPE	.000065 Amp	8 mm	1.8
S25FL116K0XMFB010	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3		4	SMALL OUTLINE		2			1.27 mm	105 Cel		4MX4	4M	-40 Cel		DUAL		S-PDSO-G8		3.6 V	2.159 mm			5.283 mm			16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1						5.283 mm	3
S25FL132K0XMFB011	Infineon Technologies	FLASH		8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	25 mA	4194304 words	3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	105 Cel	3-STATE	4MX8	4M	-40 Cel		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.28 mm		SPI	33554432 bit	2.7 V					NOR TYPE	.00001 Amp	5.28 mm	3
S25HL02GTDPBHI053	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	2147483648 bit	2.7 V					NOR TYPE	.000041 Amp	8 mm	3
S25HS512TFABHI010	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm		SPI	536870912 bit	1.7 V					NOR TYPE	.00034 Amp	8 mm	1.8
S25FS064SDSMFA010	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	100 mA	8388608 words	1.8		8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	2 V	2.16 mm	100000 Write/Erase Cycles	80 MHz	5.28 mm		SPI	67108864 bit	1.7 V		e3			NOR TYPE	.0001 Amp	5.28 mm	1.8
S25HS02GTFABHM053	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	130 mA	268435456 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	125 Cel	3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	166 MHz	8 mm		SPI	2147483648 bit	1.7 V					NOR TYPE	.00011 Amp	8 mm	1.8
S25HS512TDPBHB013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm		SPI	536870912 bit	1.7 V					NOR TYPE	.00034 Amp	8 mm	1.8
S25HL512TFABHV010	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm		SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm	3
S25HL512TDPBHV013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm		SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm	3
S25HL01GTDPBHM033	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	125 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	8 mm	3
S25HS512TFABHB010	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm		SPI	536870912 bit	1.7 V					NOR TYPE	.00034 Amp	8 mm	1.8
S25HS02GTFABHB050	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	130 mA	268435456 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	166 MHz	8 mm		SPI	2147483648 bit	1.7 V					NOR TYPE	.000045 Amp	8 mm	1.8
S25HS02GTFABHI050	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	130 mA	268435456 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	166 MHz	8 mm		SPI	2147483648 bit	1.7 V					NOR TYPE	.00004 Amp	8 mm	1.8
S25HS512TDSBHV013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm		SPI	536870912 bit	1.7 V					NOR TYPE	.00034 Amp	8 mm	1.8
S25HS02GTDPBHB053	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	2147483648 bit	1.7 V					NOR TYPE	.000045 Amp	8 mm	1.8
S25FL116K0XMFB011	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3		4	SMALL OUTLINE		2			1.27 mm	105 Cel		4MX4	4M	-40 Cel		DUAL		S-PDSO-G8		3.6 V	2.159 mm			5.283 mm			16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1						5.283 mm	3
S25HS512TDPBHM010	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	125 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm		SPI	536870912 bit	1.7 V					NOR TYPE	.00034 Amp	8 mm	1.8
S25HL04GTDPBHA050	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	220 mA	4294967296 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	3-STATE	512MX8	512M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	4294967296 bit	2.7 V					NOR TYPE	.000065 Amp	8 mm	3
S25HL01GTFABHB030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm		SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	8 mm	3
S25FL116K0XMFIQ10	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3		4	SMALL OUTLINE		2			1.27 mm	85 Cel		4MX4	4M	-40 Cel	MATTE TIN	DUAL		S-PDSO-G8		3.6 V	2.159 mm		108 MHz	5.283 mm			16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1	e3			NOR TYPE		5.283 mm	3
S25FS128SAGMFB101	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	100 mA	16777216 words	1.8		8	SMALL OUTLINE	SOP8,.3			2	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI	134217728 bit	1.7 V		e3			NOR TYPE	.0003 Amp	5.28 mm	1.8
S25HL02GTDPBHB053	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	2147483648 bit	2.7 V					NOR TYPE	.000045 Amp	8 mm	3
S25HS01GTDPBHB030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	72 mA	134217728 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	1073741824 bit	1.7 V					NOR TYPE	.00051 Amp	8 mm	1.8
S25HS01GTFABHA033	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	72 mA	134217728 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm		SPI	1073741824 bit	1.7 V					NOR TYPE	.00051 Amp	8 mm	1.8
S25HS512TFABHB013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm		SPI	536870912 bit	1.7 V					NOR TYPE	.00034 Amp	8 mm	1.8
S25HS01GTDPBHB033	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	72 mA	134217728 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	1073741824 bit	1.7 V					NOR TYPE	.00051 Amp	8 mm	1.8
S25FL116K0XMFA010	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3		4	SMALL OUTLINE		2			1.27 mm	85 Cel		4MX4	4M	-40 Cel		DUAL		S-PDSO-G8		3.6 V	2.159 mm			5.283 mm			16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1		NOT SPECIFIED	NOT SPECIFIED			5.283 mm	3
S25HL01GTDPBHA033	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	8 mm	3
S25FL128LDPMFV011	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.28 mm		SPI	134217728 bit	2.7 V					NOR TYPE	.00006 Amp	5.28 mm	3
S25HL01GTFABHI033	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm		SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	8 mm	3
S25HS512TDPBHI013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm		SPI	536870912 bit	1.7 V					NOR TYPE	.00034 Amp	8 mm	1.8
S25FL064LABNFI013	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		16777216 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	85 Cel		16MX4	16M	-40 Cel	MATTE TIN	DUAL		S-PDSO-N8	3	3.6 V	.6 mm		108 MHz	4 mm			67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH	e3					4 mm	3
S25FS064SDSMFI013	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16777216 words	1.8		4	SMALL OUTLINE		2			1.27 mm	85 Cel		16MX4	16M	-40 Cel	MATTE TIN	DUAL		S-PDSO-G8	3	2 V	2.159 mm		80 MHz	5.283 mm			67108864 bit	1.7 V	IT ALSO HAVE MEMORY WIDTH X 1	e3					5.283 mm	1.8
S25FL164K0XMFV010	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3	3/3.3	4	SMALL OUTLINE	SOP8,.3	2	Flash Memories	20	1.27 mm	105 Cel		16MX4	16M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.159 mm	100000 Write/Erase Cycles	108 MHz	5.283 mm	Not Qualified	SPI	67108864 bit	2.7 V	ALSO CONFIGURABLE AS 64M X 1	e3			NOR TYPE	.000005 Amp	5.283 mm	3
S25HS512TFABHV010	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm		SPI	536870912 bit	1.7 V					NOR TYPE	.00034 Amp	8 mm	1.8
S25HS512TDPBHA010	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24		2 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm		SPI	536870912 bit	1.7 V					NOR TYPE	.00034 Amp	8 mm	1.8
S25HL02GTDPBHA053	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	2147483648 bit	2.7 V					NOR TYPE	.000041 Amp	8 mm	3
S25HS04GTDPBHV050	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	175 mA	4294967296 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	3-STATE	512MX8	512M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	4294967296 bit	1.7 V					NOR TYPE	.000065 Amp	8 mm	1.8
S25HL512TFABHM013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	125 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm		SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm	3
S25HL01GTFABHV030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm		SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	8 mm	3
S25FL132K0XNFI040	Infineon Technologies	FLASH	INDUSTRIAL	8	VSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		8388608 words	3		4	SMALL OUTLINE, VERY THIN PROFILE		2			.8 mm	85 Cel		8MX4	8M	-40 Cel		DUAL		S-PDSO-N8		3.6 V	.6 mm		108 MHz	4 mm			33554432 bit	2.7 V	ALSO CONFIGURABLE AS 32M X 1		NOT SPECIFIED	NOT SPECIFIED			4 mm	3
S25FL128LAGMFI013	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI	134217728 bit	2.7 V		e3			NOR TYPE	.00006 Amp	5.28 mm	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.