SQUARE Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S25FL064LABMFB010	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE		2			1.27 mm	105 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL		S-PDSO-G8	3	3.6 V	2.16 mm		108 MHz	5.28 mm				67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH	e3					5.28 mm			3
S25FL128LAGMFB010	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		134217728 bit	2.7 V		e3			NOR TYPE	.00006 Amp	5.28 mm			3
S29AL016J70FFI023	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN SILVER COPPER	YES	BOTTOM		S-PBGA-B64	3	3.6 V	1.4 mm			9 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK	e1			NOR TYPE	.000005 Amp	9 mm	YES	70 ns	3	YES
S25FS064SAGMFI010	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	SMALL OUTLINE		2			1.27 mm	85 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL		S-PDSO-G8	3	2 V	2.159 mm		133 MHz	5.283 mm				67108864 bit	1.7 V	IT ALSO HAVE MEMORY WIDTH X 1	e3					5.283 mm			1.8
S25HS02GTFABHM050	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		130 mA	268435456 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	125 Cel	3-STATE	256MX8	256M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	166 MHz	8 mm		SPI		2147483648 bit	1.7 V					NOR TYPE	.00011 Amp	8 mm			1.8
S25HL02GTFABHB050	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		130 mA	268435456 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1.2 mm	2560000 Write/Erase Cycles	166 MHz	8 mm		SPI		2147483648 bit	2.7 V					NOR TYPE	.000045 Amp	8 mm			3
S25FS128SDSMFI1D1	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			33554432 words	1.8			4	SMALL OUTLINE		2			1.27 mm	85 Cel		32MX4	32M	-40 Cel			MATTE TIN		DUAL		S-PDSO-G8	3	2 V	2.159 mm		80 MHz	5.283 mm				134217728 bit	1.7 V		e3					5.283 mm			1.8
S25FL064LABMFA010	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE		2			1.27 mm	85 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL		S-PDSO-G8	3	3.6 V	2.16 mm		108 MHz	5.28 mm				67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH	e3					5.28 mm			3
S25HS04GTDPBHI050	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		175 mA	4294967296 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	3-STATE	512MX8	512M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI		4294967296 bit	1.7 V					NOR TYPE	.000065 Amp	8 mm			1.8
S25FL064LABNFV013	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2		2	.8 mm	105 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL		S-PDSO-N8	3	3.6 V	.6 mm		108 MHz	4 mm			BOTTOM/TOP	67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH	e3					4 mm			3
S25FS064SAGMFA010	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS		100 mA	8388608 words	1.8			8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		67108864 bit	1.7 V					NOR TYPE	.0001 Amp	5.28 mm			1.8
S25FS064SAGMFV010	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	SMALL OUTLINE		2			1.27 mm	105 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL		S-PDSO-G8	3	2 V	2.159 mm		133 MHz	5.283 mm				67108864 bit	1.7 V	IT ALSO HAVE MEMORY WIDTH X 1	e3					5.283 mm			1.8
S25FL064LABNFN043	Infineon Technologies	FLASH	AUTOMOTIVE	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	125 Cel		16MX4	16M	-40 Cel					DUAL		S-PDSO-N8		3.6 V	.6 mm		108 MHz	4 mm				67108864 bit	2.7 V	IT IS ALSO CONFIGURED AS 64M X 1				NOR TYPE		4 mm			3
S25HS02GTFABHV050	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		130 mA	268435456 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	166 MHz	8 mm		SPI		2147483648 bit	1.7 V					NOR TYPE	.000045 Amp	8 mm			1.8
S25FL064LABMFI040	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS			8388608 words	3			8	SMALL OUTLINE		1			1.27 mm	85 Cel		8MX8	8M	-40 Cel					DUAL		S-PDSO-G8		3.6 V	2.16 mm		108 MHz	5.28 mm				67108864 bit	2.7 V							5.28 mm			3
S25FL127SABMFA103	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3			8	SMALL OUTLINE	SOP8,.3	4		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.28 mm		SPI		134217728 bit	2.7 V					NOR TYPE	.0001 Amp	5.28 mm			3
S25FS064SAGMFB013	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS		100 mA	8388608 words	1.8			8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		67108864 bit	1.7 V		e3			NOR TYPE	.0003 Amp	5.28 mm			1.8
S25FS128SDSMFV1D3	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			33554432 words	1.8			4	SMALL OUTLINE		2			1.27 mm	105 Cel		32MX4	32M	-40 Cel					DUAL		S-PDSO-G8		2 V	2.159 mm		80 MHz	5.283 mm				134217728 bit	1.7 V							5.283 mm			1.8
S25FL064LABNFA013	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	85 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL		S-PDSO-N8	3	3.6 V	.6 mm		108 MHz	4 mm				67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH	e3					4 mm			3
S25FL128LDPMFV013	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.28 mm		SPI		134217728 bit	2.7 V					NOR TYPE	.00006 Amp	5.28 mm			3
S29AL016J55FFIR10	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3.3	YES	3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	BOTTOM		S-PBGA-B64		3.6 V	1.4 mm			9 mm	Not Qualified		TOP	16777216 bit	3 V	TOP BOOT BLOCK				NOR TYPE	.000005 Amp	9 mm	YES	55 ns	3	YES
S25FS128SAGMFB103	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		100 mA	16777216 words	1.8			8	SMALL OUTLINE	SOP8,.3			2	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		134217728 bit	1.7 V		e3			NOR TYPE	.0003 Amp	5.28 mm			1.8
S25FS064SAGMFA013	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS		100 mA	8388608 words	1.8			8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		67108864 bit	1.7 V					NOR TYPE	.0001 Amp	5.28 mm			1.8
S25FS128SAGMFM100	Infineon Technologies	FLASH		8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		100 mA	16777216 words	1.8			8	SMALL OUTLINE	SOP8,.3			2	1.27 mm	125 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		134217728 bit	1.7 V					NOR TYPE	.0003 Amp	5.28 mm			1.8
S25FS064SAGMFA011	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS		100 mA	8388608 words	1.8			8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		67108864 bit	1.7 V					NOR TYPE	.0001 Amp	5.28 mm			1.8
S25FS064SDSMFN011	Infineon Technologies	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	SMALL OUTLINE		2			1.27 mm	125 Cel		16MX4	16M	-40 Cel					DUAL		S-PDSO-G8		2 V	2.159 mm		80 MHz	5.283 mm				67108864 bit	1.7 V	IT ALSO HAVE MEMORY WIDTH X 1						5.283 mm			1.8
S29AL016J70FFA020	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		1MX16	1M	-40 Cel					BOTTOM		S-PBGA-B64		3.6 V	1.4 mm			9 mm				16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			9 mm		70 ns	3
S25FL128LAGMFA011	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		134217728 bit	2.7 V					NOR TYPE	.00006 Amp	5.28 mm			3
S25FL064LABNFA043	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	85 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL		S-PDSO-N8	3	3.6 V	.6 mm		108 MHz	4 mm				67108864 bit	2.7 V	IT IS ALSO CONFIGURED AS 64M X 1	e3					4 mm			3
S25FL128LDPMFI013	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.28 mm		SPI		134217728 bit	2.7 V					NOR TYPE	.00006 Amp	5.28 mm			3
S25FS064SDSMFA011	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS		100 mA	8388608 words	1.8			8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		2 V	2.16 mm	100000 Write/Erase Cycles	80 MHz	5.28 mm		SPI		67108864 bit	1.7 V					NOR TYPE	.0001 Amp	5.28 mm			1.8
S25HL02GTDPBHV053	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		110 mA	268435456 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI		2147483648 bit	2.7 V					NOR TYPE	.000045 Amp	8 mm			3
S25FL064LABNFV010	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	105 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL		S-PDSO-N8	3	3.6 V	.6 mm		108 MHz	4 mm				67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH	e3					4 mm			3
S25FL064LABMFA013	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE		2			1.27 mm	85 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL		S-PDSO-G8	3	3.6 V	2.16 mm		108 MHz	5.28 mm				67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH	e3					5.28 mm			3
S25HS04GTDPBHB050	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		175 mA	4294967296 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	3-STATE	512MX8	512M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI		4294967296 bit	1.7 V					NOR TYPE	.000065 Amp	8 mm			1.8
S25FS128SDSMFB1D3	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		100 mA	16777216 words	1.8			8	SMALL OUTLINE	SOP8,.3			2	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0003 Amp	5.28 mm			1.8
S25FL128LDPMFA013	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.28 mm		SPI		134217728 bit	2.7 V					NOR TYPE	.00006 Amp	5.28 mm			3
S25FS128SAGMFA100	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		100 mA	16777216 words	1.8			8	SMALL OUTLINE	SOP8,.3			2	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0003 Amp	5.28 mm			1.8
S25FL128LDPMFM011	Infineon Technologies	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	125 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.28 mm		SPI		134217728 bit	2.7 V					NOR TYPE	.00006 Amp	5.28 mm			3
S25FS064SDSMFB010	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS		100 mA	8388608 words	1.8			8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	2 V	2.16 mm	100000 Write/Erase Cycles	80 MHz	5.28 mm		SPI		67108864 bit	1.7 V		e3			NOR TYPE	.0003 Amp	5.28 mm			1.8
S25HL02GTFABHM050	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		130 mA	268435456 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	125 Cel	3-STATE	256MX8	256M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1.2 mm	2560000 Write/Erase Cycles	166 MHz	8 mm		SPI		2147483648 bit	2.7 V					NOR TYPE	.00011 Amp	8 mm			3
S25FL128LDPMFB010	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.28 mm		SPI		134217728 bit	2.7 V					NOR TYPE	.00006 Amp	5.28 mm			3
S25FS064SDSMFV010	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	SMALL OUTLINE		2			1.27 mm	105 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL		S-PDSO-G8	3	2 V	2.159 mm		80 MHz	5.283 mm				67108864 bit	1.7 V	IT ALSO HAVE MEMORY WIDTH X 1	e3					5.283 mm			1.8
S25FL064LABNFV011	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	105 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL		S-PDSO-N8	3	3.6 V	.6 mm		108 MHz	4 mm				67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH	e3					4 mm			3
S25FL064LABNFM043	Infineon Technologies	FLASH	AUTOMOTIVE	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	125 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL		S-PDSO-N8	3	3.6 V	.6 mm		108 MHz	4 mm				67108864 bit	2.7 V	IT IS ALSO CONFIGURED AS 64M X 1	e3					4 mm			3
S25FS064SDSMFV011	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	SMALL OUTLINE		2			1.27 mm	105 Cel		16MX4	16M	-40 Cel					DUAL		S-PDSO-G8		2 V	2.159 mm		80 MHz	5.283 mm				67108864 bit	1.7 V	IT ALSO HAVE MEMORY WIDTH X 1						5.283 mm			1.8
S29AL016J55FFNR10	Infineon Technologies	FLASH	AUTOMOTIVE	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3.3	YES	3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	BOTTOM		S-PBGA-B64		3.6 V	1.4 mm			9 mm	Not Qualified		TOP	16777216 bit	3 V	TOP BOOT BLOCK				NOR TYPE	.000005 Amp	9 mm	YES	55 ns	3	YES
S25HL04GTDPBHV053	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		220 mA	4294967296 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	3-STATE	512MX8	512M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI		4294967296 bit	2.7 V					NOR TYPE	.000065 Amp	8 mm			3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.