SQUARE Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S25HS02GTDPBHA050	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		110 mA	268435456 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	3-STATE	256MX8	256M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI		2147483648 bit	1.7 V						NOR TYPE	.00004 Amp	8 mm			1.8
S25FS064SAGMFN011	Infineon Technologies	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	SMALL OUTLINE		2			1.27 mm	125 Cel		16MX4	16M	-40 Cel					DUAL		S-PDSO-G8		2 V	2.159 mm		133 MHz	5.283 mm				67108864 bit	1.7 V	IT ALSO HAVE MEMORY WIDTH X 1							5.283 mm			1.8
S25FL032P0XMFB013	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			1	SMALL OUTLINE					1.27 mm	105 Cel		32MX1	32M	-40 Cel			MATTE TIN		DUAL		S-PDSO-G8	3	3.6 V	2.16 mm		104 MHz	5.28 mm				33554432 bit	2.7 V			e3					5.28 mm			3
S25FS128SDSMFV103	Infineon Technologies	FLASH		8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	16777216 words	1.8			8	SMALL OUTLINE	SOP8,.3			2	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		134217728 bit	1.7 V						NOR TYPE	.0003 Amp	5.28 mm			1.8
S29AL016J55FFIR23	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3.3	YES	3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	BOTTOM		S-PBGA-B64		3.6 V	1.4 mm			9 mm	Not Qualified		BOTTOM	16777216 bit	3 V	BOTTOM BOOT BLOCK					NOR TYPE	.000005 Amp	9 mm	YES	55 ns	3	YES
S29AL016J55FFAR20	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		1MX16	1M	-40 Cel					BOTTOM		S-PBGA-B64	3	3.6 V	1.4 mm			9 mm				16777216 bit	3 V								9 mm		55 ns	3
S25HL02GTFABHM053	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		130 mA	268435456 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	125 Cel	3-STATE	256MX8	256M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1.2 mm	2560000 Write/Erase Cycles	166 MHz	8 mm		SPI		2147483648 bit	2.7 V						NOR TYPE	.00011 Amp	8 mm			3
S25FS064SDSMFI010	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	SMALL OUTLINE		2			1.27 mm	85 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL		S-PDSO-G8	3	2 V	2.159 mm		80 MHz	5.283 mm				67108864 bit	1.7 V	IT ALSO HAVE MEMORY WIDTH X 1		e3					5.283 mm			1.8
S25FS128SDSMFB1D0	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		100 mA	16777216 words	1.8			8	SMALL OUTLINE	SOP8,.3			2	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		134217728 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0003 Amp	5.28 mm			1.8
S25HS04GTDPBHA053	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		175 mA	4294967296 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	3-STATE	512MX8	512M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI		4294967296 bit	1.7 V						NOR TYPE	.000065 Amp	8 mm			1.8
S25FL064LABMFV040	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL			60 mA	8388608 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	105 Cel		8MX8	8M	-40 Cel					DUAL		R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.28 mm		SPI		67108864 bit	2.7 V						NOR TYPE	.00003 Amp	5.28 mm			3
S25FL128LAGMFV011	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		134217728 bit	2.7 V						NOR TYPE	.00006 Amp	5.28 mm			3
S29AL016J55FFIR13	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3.3	YES	3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	BOTTOM		S-PBGA-B64		3.6 V	1.4 mm			9 mm	Not Qualified		TOP	16777216 bit	3 V	TOP BOOT BLOCK					NOR TYPE	.000005 Amp	9 mm	YES	55 ns	3	YES
AM29LV640DU120RPCEN	Infineon Technologies	FLASH	MILITARY	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		32K	30 mA	4194304 words		YES	3.3,3/5	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	125 Cel		4MX16	4M	-55 Cel	128	YES		YES	BOTTOM		S-PBGA-B64							Not Qualified			67108864 bit							NOR TYPE	.000005 Amp		YES	120 ns		YES
S25FS128SDSMFA1D0	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		100 mA	16777216 words	1.8			8	SMALL OUTLINE	SOP8,.3			2	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		134217728 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0003 Amp	5.28 mm			1.8
S25HS02GTDPBHV050	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		110 mA	268435456 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI		2147483648 bit	1.7 V			e1			NOR TYPE	.000045 Amp	8 mm			1.8
S25FS128SAGMFA103	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		100 mA	16777216 words	1.8			8	SMALL OUTLINE	SOP8,.3			2	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		134217728 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0003 Amp	5.28 mm			1.8
S25HL04GTDPBHV050	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		220 mA	4294967296 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	3-STATE	512MX8	512M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI		4294967296 bit	2.7 V						NOR TYPE	.000065 Amp	8 mm			3
S25FL127SABMFA100	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3			8	SMALL OUTLINE	SOP8,.3	4		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.28 mm		SPI		134217728 bit	2.7 V						NOR TYPE	.0001 Amp	5.28 mm			3
S25FL032P0XMFA011	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel		32MX1	32M	-40 Cel					DUAL		S-PDSO-G8		3.6 V	2.16 mm		104 MHz	5.28 mm				33554432 bit	2.7 V						NOR TYPE		5.28 mm			3
S29AL016J55FFNR13	Infineon Technologies	FLASH	AUTOMOTIVE	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3.3	YES	3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	BOTTOM		S-PBGA-B64		3.6 V	1.4 mm			9 mm	Not Qualified		TOP	16777216 bit	3 V	TOP BOOT BLOCK					NOR TYPE	.000005 Amp	9 mm	YES	55 ns	3	YES
S25FL128LAGMFB011	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		134217728 bit	2.7 V						NOR TYPE	.00006 Amp	5.28 mm			3
S25FL032P0XBFI000	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			38 mA	4194304 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		4MX8	4M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24				100000 Write/Erase Cycles	80 MHz		Not Qualified	SPI		33554432 bit							NOR TYPE	.00001 Amp
S25FL064P0XBFI000	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		64MX1	64M	-40 Cel					BOTTOM		S-PBGA-B24		3.6 V	1.2 mm		104 MHz	6 mm	Not Qualified			67108864 bit	2.7 V						NOR TYPE		8 mm			3
S25HS02GTDPBHI053	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		110 mA	268435456 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	3-STATE	256MX8	256M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		2 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI		2147483648 bit	1.7 V						NOR TYPE	.00004 Amp	8 mm			1.8
S29AL016J70FFN012	Infineon Technologies	FLASH	AUTOMOTIVE	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	BOTTOM		S-PBGA-B64		3.6 V	1.4 mm			9 mm	Not Qualified		TOP	16777216 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE	.000005 Amp	9 mm	YES	70 ns	3	YES
AM29DL640G120PCIN	Infineon Technologies	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		8K,64K	45 mA	4194304 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	16,126	YES	TIN LEAD	YES	BOTTOM		S-PBGA-B64	3						Not Qualified		BOTTOM/TOP	67108864 bit				e0		260	NOR TYPE	.000005 Amp		YES	120 ns		YES
S29AL016J55FFAR13	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		1MX16	1M	-40 Cel					BOTTOM		S-PBGA-B64		3.6 V	1.4 mm			9 mm				16777216 bit	3 V				NOT SPECIFIED	NOT SPECIFIED			9 mm		55 ns	3
S25FL127SABMFB100	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3			8	SMALL OUTLINE	SOP8,.3	4		20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.28 mm		SPI		134217728 bit	2.7 V			e3			NOR TYPE	.0003 Amp	5.28 mm			3
S25FL128LDPMFI010	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.28 mm		SPI		134217728 bit	2.7 V						NOR TYPE	.00006 Amp	5.28 mm			3
S25FL064LABNFN040	Infineon Technologies	FLASH	AUTOMOTIVE	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	125 Cel		16MX4	16M	-40 Cel					DUAL		S-PDSO-N8		3.6 V	.6 mm		108 MHz	4 mm				67108864 bit	2.7 V	IT IS ALSO CONFIGURED AS 64M X 1					NOR TYPE		4 mm			3
S25FL064LABMFN013	Infineon Technologies	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE		2			1.27 mm	125 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL		S-PDSO-G8		3.6 V	2.16 mm		108 MHz	5.28 mm				67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH		e3			NOR TYPE		5.28 mm			3
S25FL064LABMFA011	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE		2			1.27 mm	85 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL		S-PDSO-G8	3	3.6 V	2.16 mm		108 MHz	5.28 mm				67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH		e3					5.28 mm			3
S29AL016J70FFN023	Infineon Technologies	FLASH	AUTOMOTIVE	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	BOTTOM		S-PBGA-B64		3.6 V	1.4 mm			9 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE	.000005 Amp	9 mm	YES	70 ns	3	YES
S25FL064LABMFM011	Infineon Technologies	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE		2			1.27 mm	125 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL		S-PDSO-G8	3	3.6 V	2.16 mm		108 MHz	5.28 mm				67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH		e3					5.28 mm			3
S25FS128SAGMFB100	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		100 mA	16777216 words	1.8			8	SMALL OUTLINE	SOP8,.3			2	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		134217728 bit	1.7 V			e3			NOR TYPE	.0003 Amp	5.28 mm			1.8
S25FS128SDSMFM1D3	Infineon Technologies	FLASH		8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		100 mA	16777216 words	1.8			8	SMALL OUTLINE	SOP8,.3			2	1.27 mm	125 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		134217728 bit	1.7 V						NOR TYPE	.0003 Amp	5.28 mm			1.8
S25FL064LABMFB013	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE		2			1.27 mm	105 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL		S-PDSO-G8	3	3.6 V	2.16 mm		108 MHz	5.28 mm				67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH		e3					5.28 mm			3
AT45DB161E-SSHFHA-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		22 mA	2097152 words	3			8	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	85 MHz	3.9 mm		SPI		16777216 bit	2.3 V			e4			NOR TYPE	.00005 Amp	4.925 mm
AT45DB161E-SSHFHC-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		22 mA	2097152 words	3			8	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	85 MHz	3.9 mm		SPI		16777216 bit	2.3 V			e4			NOR TYPE	.00005 Amp	4.925 mm
AT25QL128A-SUE-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		27 mA	16777216 words	1.8			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		134217728 bit	1.7 V						NOR TYPE	.00007 Amp	5.28 mm			1.8
AT45DQ161-CCUF-T	Renesas Electronics	FLASH	INDUSTRIAL	9	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			16777216 words	3			1	GRID ARRAY, VERY THIN PROFILE					1 mm	85 Cel		16MX1	16M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		S-PBGA-B9		3.6 V	.6 mm		100 MHz	6 mm				16777216 bit	2.5 V	IT ALSO OPERATES AT FREQUENCY 85 MHZ AT 2.3 TO 3.6 V SUPPLY VOLTAGE		e1					6 mm			3
AT45DQ321-CCUF-T	Renesas Electronics	FLASH	INDUSTRIAL	9	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			33554432 words	3			1	GRID ARRAY, VERY THIN PROFILE					1 mm	85 Cel		32MX1	32M	-40 Cel					BOTTOM		S-PBGA-B9		3.6 V	.6 mm		104 MHz	6 mm				33554432 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED			6 mm			3
AT45DB161E-SHFHC-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		22 mA	2097152 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	85 MHz	5.24 mm		SPI		16777216 bit	2.3 V			e4			NOR TYPE	.00005 Amp	5.29 mm
AT45DB161E-SHFHA-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		22 mA	2097152 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	85 MHz	5.24 mm		SPI		16777216 bit	2.3 V			e4			NOR TYPE	.00005 Amp	5.29 mm
AT45DQ161-CCUF	Renesas Electronics	FLASH		8	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		26 mA	2097152 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA9,3X3,40			20	1 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B9		3.6 V	.6 mm	100000 Write/Erase Cycles	85 MHz	6 mm		SPI		16777216 bit	2.3 V						NOR TYPE	.000015 Amp	6 mm			3
AT25SL321-SUE-T	Renesas Electronics	FLASH		8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	4194304 words	1.8			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	2 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.28 mm		SPI		33554432 bit	1.7 V						NOR TYPE	.00005 Amp	5.28 mm			1.8
K8P2815UQB-EI4BT	Samsung	FLASH	INDUSTRIAL	64	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA64,8X8,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-40 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM		S-PBGA-B64	3						Not Qualified		BOTTOM/TOP	134217728 bit			8	e1		260	NOR TYPE	.00003 Amp		YES	60 ns		YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.