SQUARE Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Parallel or Serial	Sector Size (Words)	Maximum Supply Current	No. of Words	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Ready or Busy	Terminal Position	JESD-30 Code	Qualification	Boot Block	Memory Density	Page Size (words)	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M29DW256G60ZA1F	Micron Technology	FLASH	COMMERCIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	32K,128K	10 mA	16777216 words	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	16MX16	16M	0 Cel	8,126	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified	BOTTOM/TOP	268435456 bit				NOR TYPE	.0001 Amp	YES	60 ns		YES
M29W160EB80ZS3SE	Micron Technology	FLASH	AUTOMOTIVE	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,8K,32K,64K	10 mA	1048576 words	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	125 Cel	1MX16	1M	-40 Cel	1,2,1,31	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified	BOTTOM	16777216 bit				NOR TYPE	.0001 Amp	YES	80 ns		YES
RC28F640P30T85A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	28 mA	4194304 words	NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	4,63	YES		BOTTOM	S-PBGA-B64	Not Qualified	TOP	67108864 bit	4			NOR TYPE	.000035 Amp	YES	85 ns		NO
RC28F640J3D75D	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	80 mA	4194304 words	NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	64	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified		67108864 bit	4/8	30	235	NOR TYPE	.00012 Amp	YES	75 ns		NO
M29DW127G60NF6F	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K,256K	15 mA	8388608 words	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	8,62	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified	BOTTOM/TOP	134217728 bit	8/16			NOR TYPE	.0001 Amp	YES	60 ns		YES
M29W160EB80ZS3SF	Micron Technology	FLASH	AUTOMOTIVE	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,8K,32K,64K	10 mA	1048576 words	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	125 Cel	1MX16	1M	-40 Cel	1,2,1,31	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified	BOTTOM	16777216 bit				NOR TYPE	.0001 Amp	YES	80 ns		YES
M29W128GL70ZA6DE	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	20 mA	8388608 words	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified		134217728 bit	8/16			NOR TYPE	.0001 Amp	YES	70 ns		YES
M29W128GSL70ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	20 mA	8388608 words	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified		134217728 bit	8/16			NOR TYPE	.0001 Amp	YES	70 ns		YES
RC28F128J3D75B	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	80 mA	8388608 words	NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified		134217728 bit	4/8	30	235	NOR TYPE	.00012 Amp	YES	75 ns		NO
RC28F640P30B85A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	28 mA	4194304 words	NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	4,63	YES		BOTTOM	S-PBGA-B64	Not Qualified	BOTTOM	67108864 bit	4			NOR TYPE	.000035 Amp	YES	85 ns		NO
M29W160EB80ZS3S	Micron Technology	FLASH	AUTOMOTIVE	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,8K,32K,64K	10 mA	1048576 words	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	125 Cel	1MX16	1M	-40 Cel	1,2,1,31	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified	BOTTOM	16777216 bit				NOR TYPE	.0001 Amp	YES	80 ns		YES
RC28F256P30T85B	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	51 mA	16777216 words	NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES		BOTTOM	S-PBGA-B64	Not Qualified	TOP	268435456 bit	4			NOR TYPE	.000115 Amp	YES	85 ns		NO
RC28F320J3D75D	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	80 mA	2097152 words	NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	32	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified		33554432 bit	4/8	30	235	NOR TYPE	.00012 Amp	YES	75 ns		NO
M29W128GL6AZS6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	20 mA	8388608 words	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified		134217728 bit	8/16			NOR TYPE	.0001 Amp	YES	60 ns		YES
RC28F320J3D-75	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	54 mA	2097152 words	NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	32	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified		33554432 bit	4/8			NOR TYPE	.00012 Amp	YES	75 ns		NO
M29DW256G60ZS6F	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	32K,128K	10 mA	16777216 words	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	8,126	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified	BOTTOM/TOP	268435456 bit				NOR TYPE	.0001 Amp	YES	60 ns		YES
M29W128GSL70ZA6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	20 mA	8388608 words	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified		134217728 bit	8/16			NOR TYPE	.0001 Amp	YES	70 ns		YES
M29DW128F6AZA6	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	8K,64K	20 mA	8388608 words	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified	BOTTOM/TOP	134217728 bit	8/16			NOR TYPE	.0001 Amp	YES	60 ns		YES
RC28F320J3F75D	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	80 mA	2097152 words	NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	32	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified		33554432 bit	4/8	30	235	NOR TYPE	.00012 Amp	YES	75 ns		NO
RC28F640J3D75B	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	80 mA	4194304 words	NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	64	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified		67108864 bit	4/8	30	235	NOR TYPE	.00012 Amp	YES	75 ns		NO
RC28F640P30BF65B	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	50 mA	4194304 words	NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	4,63	YES		BOTTOM	S-PBGA-B64	Not Qualified	BOTTOM	67108864 bit	8			NOR TYPE	.000055 Amp	YES	65 ns		NO
M29DW256G60ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	32K,128K	10 mA	16777216 words	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	8,126	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified	BOTTOM/TOP	268435456 bit				NOR TYPE	.0001 Amp	YES	60 ns		YES
M29DW128F6AZA6F	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	8K,64K	20 mA	8388608 words	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified	BOTTOM/TOP	134217728 bit	8/16			NOR TYPE	.0001 Amp	YES	60 ns		YES
RC28F640J3D75A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	80 mA	4194304 words	NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	64	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified		67108864 bit	4/8	30	235	NOR TYPE	.00012 Amp	YES	75 ns		NO
RC48F4400P0VB00A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	51 mA	33554432 words	NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	8, 510	YES		BOTTOM	S-PBGA-B64	Not Qualified	BOTTOM	536870912 bit	4			NOR TYPE	.000005 Amp	YES	85 ns		NO
RC28F256P30T85A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	51 mA	16777216 words	NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES		BOTTOM	S-PBGA-B64	Not Qualified	TOP	268435456 bit	4			NOR TYPE	.000115 Amp	YES	85 ns		NO
M29W128GSH70ZA6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	20 mA	8388608 words	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified		134217728 bit	8/16			NOR TYPE	.0001 Amp	YES	70 ns		YES
M29W128GSH70ZS6F	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	20 mA	8388608 words	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified		134217728 bit	8/16			NOR TYPE	.0001 Amp	YES	70 ns		YES
M29DW127G70NF6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K,256K	15 mA	8388608 words	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	8,62	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified	BOTTOM/TOP	134217728 bit	8/16			NOR TYPE	.0001 Amp	YES	70 ns		YES
RC28F00BM29EWL	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	31 mA	134217728 words	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	128MX16	128M	-40 Cel	2K	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified	BOTTOM/TOP	2147483648 bit	16/32			NOR TYPE	.00048 Amp	YES	100 ns		YES
RC28F128P33BF60B	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	28 mA	8388608 words	NO	2.5/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	4,127	YES		BOTTOM	S-PBGA-B64	Not Qualified	BOTTOM	134217728 bit	8			NOR TYPE	.002 Amp	YES	60 ns		NO
M29W128GH6AZS6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	20 mA	8388608 words	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified		134217728 bit	8/16			NOR TYPE	.0001 Amp	YES	60 ns		YES
M29DW128F6AZA6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	8K,64K	20 mA	8388608 words	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified	BOTTOM/TOP	134217728 bit	8/16			NOR TYPE	.0001 Amp	YES	60 ns		YES
M29DW127G70ZA6F	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K,256K	15 mA	8388608 words	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	8,62	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified	BOTTOM/TOP	134217728 bit	8/16			NOR TYPE	.0001 Amp	YES	70 ns		YES
RC28F320J3D75B	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	80 mA	2097152 words	NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	32	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified		33554432 bit	4/8	30	235	NOR TYPE	.00012 Amp	YES	75 ns		NO
M29W128GSH70ZA6F	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	20 mA	8388608 words	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified		134217728 bit	8/16			NOR TYPE	.0001 Amp	YES	70 ns		YES
M29DW256G70ZS1F	Micron Technology	FLASH	COMMERCIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	32K,128K	10 mA	16777216 words	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	16MX16	16M	0 Cel	8,126	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified	BOTTOM/TOP	268435456 bit				NOR TYPE	.0001 Amp	YES	70 ns	3	YES
M29W160EB80ZS3ST	Micron Technology	FLASH	AUTOMOTIVE	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,8K,32K,64K	10 mA	1048576 words	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	125 Cel	1MX16	1M	-40 Cel	1,2,1,31	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified	BOTTOM	16777216 bit				NOR TYPE	.0001 Amp	YES	80 ns		YES
RC28F128J3D75A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	80 mA	8388608 words	NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified		134217728 bit	4/8	30	235	NOR TYPE	.00012 Amp	YES	75 ns		NO
M29DW127G60ZA6F	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K,256K	15 mA	8388608 words	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	8,62	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified	BOTTOM/TOP	134217728 bit	8/16			NOR TYPE	.0001 Amp	YES	60 ns		YES
M29DW127G70ZA6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K,256K	15 mA	8388608 words	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	8,62	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified	BOTTOM/TOP	134217728 bit	8/16			NOR TYPE	.0001 Amp	YES	70 ns		YES
RC28F128J3D-75	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	54 mA	8388608 words	NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified		134217728 bit	4/8			NOR TYPE	.00012 Amp	YES	75 ns		NO
RC28F256J3D95A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	80 mA	16777216 words	NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified		268435456 bit	4/8	30	235	NOR TYPE	.00012 Amp	YES			NO
RC28F128P30B85A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	51 mA	8388608 words	NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	4,127	YES		BOTTOM	S-PBGA-B64	Not Qualified	BOTTOM	134217728 bit	4			NOR TYPE	.000075 Amp	YES	85 ns		NO
M29DW256G70ZA1E	Micron Technology	FLASH	COMMERCIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	32K,128K	10 mA	16777216 words	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	16MX16	16M	0 Cel	8,126	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified	BOTTOM/TOP	268435456 bit				NOR TYPE	.0001 Amp	YES	70 ns	3	YES
RC28F256J3D-95	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	54 mA	16777216 words	NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified		268435456 bit	4/8			NOR TYPE	.00012 Amp	YES			NO
M29DW127G60ZA6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K,256K	15 mA	8388608 words	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	8,62	YES	YES	BOTTOM	S-PBGA-B64	Not Qualified	BOTTOM/TOP	134217728 bit	8/16			NOR TYPE	.0001 Amp	YES	60 ns		YES
RC28F640P30B85B	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	16K,64K	28 mA	4194304 words	NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	4,63	YES		BOTTOM	S-PBGA-B64	Not Qualified	BOTTOM	67108864 bit	4			NOR TYPE	.000035 Amp	YES	85 ns		NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.