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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8P6415UQB-EI4B	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	S-PBGA-B64	3				Not Qualified	BOTTOM/TOP	67108864 bit			8			260	NOR TYPE	.00003 Amp		YES	60 ns		YES
K8P6415UQB-EC4C	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	S-PBGA-B64	3				Not Qualified	BOTTOM/TOP	67108864 bit			8			260	NOR TYPE	.00003 Amp		YES	65 ns		YES
K8A2815ETM-LI7B	Samsung	FLASH	INDUSTRIAL	64	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,8X8,32		Flash Memories	.8 mm	85 Cel	8MX16	8M	-40 Cel	8, 255	YES		YES	BOTTOM	S-PBGA-B64					Not Qualified	TOP	134217728 bit							NOR TYPE	.00005 Amp		YES	90 ns		YES
K8P2815UQB-EE4BT	Samsung	FLASH	OTHER	64	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA64,8X8,32		Flash Memories	.8 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES		YES	BOTTOM	S-PBGA-B64	3				Not Qualified	BOTTOM/TOP	134217728 bit			8			260	NOR TYPE	.00003 Amp		YES	60 ns		YES
K8P3315UQB-EI4C0	Samsung	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64					Not Qualified	BOTTOM/TOP	33554432 bit			8				NOR TYPE	.00003 Amp		YES	65 ns		YES
K8A2815ETM-TC7B0	Samsung	FLASH	COMMERCIAL	64	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	70 Cel	8MX16	8M	0 Cel			TIN LEAD		BOTTOM	S-PBGA-B64		1.95 V	1 mm	9 mm	Not Qualified		134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0					9 mm		90 ns	1.8
K8P3315UQB-EI4BT	Samsung	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64					Not Qualified	BOTTOM/TOP	33554432 bit			8				NOR TYPE	.00003 Amp		YES	60 ns		YES
K8P2815UQB-EE4CT	Samsung	FLASH	OTHER	64	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA64,8X8,32		Flash Memories	.8 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES		YES	BOTTOM	S-PBGA-B64	3				Not Qualified	BOTTOM/TOP	134217728 bit			8			260	NOR TYPE	.00003 Amp		YES	65 ns		YES
K8A2815ETM-LI7B0	Samsung	FLASH	INDUSTRIAL	64	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel	8MX16	8M	-40 Cel			TIN SILVER COPPER		BOTTOM	S-PBGA-B64	2	1.95 V	1 mm	9 mm	Not Qualified		134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1					9 mm		90 ns	1.8
K8A2815EBM-TI7B	Samsung	FLASH	INDUSTRIAL	64	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,8X8,32		Flash Memories	.8 mm	85 Cel	8MX16	8M	-40 Cel	8, 255	YES	Tin/Lead (Sn/Pb)	YES	BOTTOM	S-PBGA-B64					Not Qualified	BOTTOM	134217728 bit				e0			NOR TYPE	.00005 Amp		YES	90 ns		YES
K8P2815UQB-EI4DT	Samsung	FLASH	INDUSTRIAL	64	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA64,8X8,32		Flash Memories	.8 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	S-PBGA-B64	3				Not Qualified	BOTTOM/TOP	134217728 bit			8			260	NOR TYPE	.00003 Amp		YES	70 ns		YES
K8A2815EBM-LI7C0	Samsung	FLASH	INDUSTRIAL	64	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel	8MX16	8M	-40 Cel			TIN SILVER COPPER		BOTTOM	S-PBGA-B64	2	1.95 V	1 mm	9 mm	Not Qualified		134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1					9 mm		70 ns	1.8
K8A2815EBM-TI7C0	Samsung	FLASH	INDUSTRIAL	64	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel	8MX16	8M	-40 Cel			TIN LEAD		BOTTOM	S-PBGA-B64		1.95 V	1 mm	9 mm	Not Qualified		134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0					9 mm		70 ns	1.8
K8P3315UQB-EI4B0	Samsung	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64					Not Qualified	BOTTOM/TOP	33554432 bit			8				NOR TYPE	.00003 Amp		YES	60 ns		YES
K8P3215UQB-EE4CT	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64	3				Not Qualified	BOTTOM/TOP	33554432 bit			8			260	NOR TYPE	.00003 Amp		YES	65 ns		YES
K8P2815UQB-EE4DT	Samsung	FLASH	OTHER	64	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA64,8X8,32		Flash Memories	.8 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES		YES	BOTTOM	S-PBGA-B64	3				Not Qualified	BOTTOM/TOP	134217728 bit			8			260	NOR TYPE	.00003 Amp		YES	70 ns		YES
K8P6415UQB-EI4CT	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	S-PBGA-B64	3				Not Qualified	BOTTOM/TOP	67108864 bit			8			260	NOR TYPE	.00003 Amp		YES	65 ns		YES
K8A2815EBM-TC7B0	Samsung	FLASH	COMMERCIAL	64	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	70 Cel	8MX16	8M	0 Cel			TIN LEAD		BOTTOM	S-PBGA-B64		1.95 V	1 mm	9 mm	Not Qualified		134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0					9 mm		90 ns	1.8
K8P6415UQB-EI4BT	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	S-PBGA-B64	3				Not Qualified	BOTTOM/TOP	67108864 bit			8			260	NOR TYPE	.00003 Amp		YES	60 ns		YES
K8P3315UQB-EE4CT	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64					Not Qualified	BOTTOM/TOP	33554432 bit			8				NOR TYPE	.00003 Amp		YES	65 ns		YES
K8A2815EBM-LI7B	Samsung	FLASH	INDUSTRIAL	64	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,8X8,32		Flash Memories	.8 mm	85 Cel	8MX16	8M	-40 Cel	8, 255	YES		YES	BOTTOM	S-PBGA-B64					Not Qualified	BOTTOM	134217728 bit							NOR TYPE	.00005 Amp		YES	90 ns		YES
K8A2815EBM-LI7C	Samsung	FLASH	INDUSTRIAL	64	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,8X8,32		Flash Memories	.8 mm	85 Cel	8MX16	8M	-40 Cel	8, 255	YES		YES	BOTTOM	S-PBGA-B64					Not Qualified	BOTTOM	134217728 bit							NOR TYPE	.00005 Amp		YES	70 ns		YES
K8P6415UQB-EC4D	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	S-PBGA-B64	3				Not Qualified	BOTTOM/TOP	67108864 bit			8			260	NOR TYPE	.00003 Amp		YES	70 ns		YES
K8P6415UQB-EE4D	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	S-PBGA-B64	3				Not Qualified	BOTTOM/TOP	67108864 bit			8			260	NOR TYPE	.00003 Amp		YES	70 ns		YES
K8P6415UQB-EE4B	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	S-PBGA-B64	3				Not Qualified	BOTTOM/TOP	67108864 bit			8			260	NOR TYPE	.00003 Amp		YES	60 ns		YES
K8A2815ETM-LI7C0	Samsung	FLASH	INDUSTRIAL	64	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel	8MX16	8M	-40 Cel			TIN SILVER COPPER		BOTTOM	S-PBGA-B64	2	1.95 V	1 mm	9 mm	Not Qualified		134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1					9 mm		70 ns	1.8
K8P3315UQB-EC4C0	Samsung	FLASH	COMMERCIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	2MX16	2M	0 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64					Not Qualified	BOTTOM/TOP	33554432 bit			8				NOR TYPE	.00003 Amp		YES	65 ns		YES
K8P3215UQB-EC4BT	Samsung	FLASH	COMMERCIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	2MX16	2M	0 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64	3				Not Qualified	BOTTOM/TOP	33554432 bit			8			260	NOR TYPE	.00003 Amp		YES	60 ns		YES
K9F4G08U0F-5HB00	Samsung	FLASH	INDUSTRIAL	63	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	105 Cel	512MX8	512M	-40 Cel					BOTTOM	S-PBGA-B63		3.6 V	1 mm	9 mm			4294967296 bit	2.7 V						SLC NAND TYPE		11 mm			2.7
K8A2815ETM-LC7B	Samsung	FLASH	COMMERCIAL	64	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,8X8,32		Flash Memories	.8 mm	70 Cel	8MX16	8M	0 Cel	8, 255	YES		YES	BOTTOM	S-PBGA-B64					Not Qualified	TOP	134217728 bit							NOR TYPE	.00005 Amp		YES	90 ns		YES
K8P3215UQB-EC4AT	Samsung	FLASH	COMMERCIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	2MX16	2M	0 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64	3				Not Qualified	BOTTOM/TOP	33554432 bit			8			260	NOR TYPE	.00003 Amp		YES	55 ns		YES
K8A2815ETM-TC7B	Samsung	FLASH	COMMERCIAL	64	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,8X8,32		Flash Memories	.8 mm	70 Cel	8MX16	8M	0 Cel	8, 255	YES	Tin/Lead (Sn/Pb)	YES	BOTTOM	S-PBGA-B64					Not Qualified	TOP	134217728 bit				e0			NOR TYPE	.00005 Amp		YES	90 ns		YES
K8P3215UQB-EI4CT	Samsung	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64	3				Not Qualified	BOTTOM/TOP	33554432 bit			8			260	NOR TYPE	.00003 Amp		YES	65 ns		YES
K8P3315UQB-EI4CT	Samsung	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64					Not Qualified	BOTTOM/TOP	33554432 bit			8				NOR TYPE	.00003 Amp		YES	65 ns		YES
K8A2815ETM-TC7C	Samsung	FLASH	COMMERCIAL	64	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,8X8,32		Flash Memories	.8 mm	70 Cel	8MX16	8M	0 Cel	8, 255	YES	Tin/Lead (Sn/Pb)	YES	BOTTOM	S-PBGA-B64					Not Qualified	TOP	134217728 bit				e0			NOR TYPE	.00005 Amp		YES	70 ns		YES
K8P6415UQB-EC4CT	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	S-PBGA-B64	3				Not Qualified	BOTTOM/TOP	67108864 bit			8			260	NOR TYPE	.00003 Amp		YES	65 ns		YES
K8P2815UQB-EI4CT	Samsung	FLASH	INDUSTRIAL	64	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA64,8X8,32		Flash Memories	.8 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	S-PBGA-B64	3				Not Qualified	BOTTOM/TOP	134217728 bit			8			260	NOR TYPE	.00003 Amp		YES	65 ns		YES
K8P3315UQB-EC4CT	Samsung	FLASH	COMMERCIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	2MX16	2M	0 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64					Not Qualified	BOTTOM/TOP	33554432 bit			8				NOR TYPE	.00003 Amp		YES	65 ns		YES
K8P3315UQB-EI4D0	Samsung	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64					Not Qualified	BOTTOM/TOP	33554432 bit			8				NOR TYPE	.00003 Amp		YES	70 ns		YES
K8P3215UQB-EI4AT	Samsung	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64	3				Not Qualified	BOTTOM/TOP	33554432 bit			8			260	NOR TYPE	.00003 Amp		YES	55 ns		YES
K8A2815EBM-LC7C	Samsung	FLASH	COMMERCIAL	64	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,8X8,32		Flash Memories	.8 mm	70 Cel	8MX16	8M	0 Cel	8, 255	YES		YES	BOTTOM	S-PBGA-B64					Not Qualified	BOTTOM	134217728 bit							NOR TYPE	.00005 Amp		YES	70 ns		YES
K8P3315UQB-EC4B0	Samsung	FLASH	COMMERCIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	2MX16	2M	0 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64					Not Qualified	BOTTOM/TOP	33554432 bit			8				NOR TYPE	.00003 Amp		YES	60 ns		YES
K8A2815ETM-TI7B0	Samsung	FLASH	INDUSTRIAL	64	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel	8MX16	8M	-40 Cel			TIN LEAD		BOTTOM	S-PBGA-B64		1.95 V	1 mm	9 mm	Not Qualified		134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0					9 mm		90 ns	1.8
K8P3315UQB-EE4C0	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64					Not Qualified	BOTTOM/TOP	33554432 bit			8				NOR TYPE	.00003 Amp		YES	65 ns		YES
K9F4G08U0F-5FB00	Samsung	FLASH	INDUSTRIAL	63	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel	512MX8	512M	-40 Cel					BOTTOM	S-PBGA-B63		3.6 V	1 mm	9 mm			4294967296 bit	2.7 V						SLC NAND TYPE		11 mm			2.7
PC48F4400P0VB0EB	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	31 mA	33554432 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	8, 510	YES			BOTTOM	S-PBGA-B64					Not Qualified	BOTTOM/TOP	536870912 bit							NOR TYPE	.00042 Amp		YES	100 ns		NO
M29W128GSL70ZS6F	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES		YES	BOTTOM	S-PBGA-B64					Not Qualified		134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
RC28F320J3D75A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	80 mA	2097152 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	32	YES		YES	BOTTOM	S-PBGA-B64					Not Qualified		33554432 bit			4/8		30	235	NOR TYPE	.00012 Amp		YES	75 ns		NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.