SQUARE Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
N25Q128A23ESE40G	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			134217728 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel	128MX1	128M	-40 Cel					DUAL		S-PDSO-G8	3.6 V	2.16 mm		108 MHz	5.285 mm				134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			5.285 mm			3
N25Q064A13E12D0G	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			20 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	108 MHz		Not Qualified	SPI		67108864 bit						NOR TYPE	.0001 Amp
M25PX16-VZM6PBA	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	2097152 words			2.5/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		16777216 bit						NOR TYPE	.00001 Amp
M25P32SVMW6TPB	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			4194304 words	3			8	SMALL OUTLINE					1.27 mm	85 Cel	4MX8	4M	-40 Cel					DUAL		S-PDSO-G8	3.6 V	2.16 mm		75 MHz	5.285 mm				33554432 bit	2.7 V					NOR TYPE		5.285 mm			2.7
N25Q128A31ESEH0F	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			134217728 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel	128MX1	128M	-40 Cel					DUAL		S-PDSO-G8	2 V	2.16 mm		108 MHz	5.285 mm				134217728 bit	1.7 V					NOR TYPE		5.285 mm			1.8
M25PX32SOVMW3TB	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			4194304 words	3			8	SMALL OUTLINE					1.27 mm	125 Cel	4MX8	4M	-40 Cel					DUAL		S-PDSO-G8	3.6 V	2.16 mm		75 MHz	5.285 mm				33554432 bit	2.7 V							5.285 mm			2.7
MT28F128J3FK-12ET	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	80 mA	8388608 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	Tin/Lead (Sn/Pb)	YES	BOTTOM		S-PBGA-B64						Not Qualified			134217728 bit		4/8	e0			NOR TYPE	.00012 Amp		YES	120 ns		NO
N25Q032A31ESEH0E	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			33554432 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel	32MX1	32M	-40 Cel					DUAL		S-PDSO-G8	2 V	2.16 mm		108 MHz	5.285 mm				33554432 bit	1.7 V					NOR TYPE		5.285 mm			1.8
N25Q064A43ESEH0E	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			67108864 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel	64MX1	64M	-40 Cel					DUAL		S-PDSO-G8	3.6 V	2.16 mm		108 MHz	5.285 mm				67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			5.285 mm			3
M25PX16-VZM6F	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	2097152 words			2.5/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		16777216 bit						NOR TYPE	.00001 Amp
M25PX32STVZM3EBA	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	4194304 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	125 Cel	4MX8	4M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		33554432 bit						NOR TYPE	.00001 Amp
N25Q032A11ESEH0E	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			33554432 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel	32MX1	32M	-40 Cel					DUAL		S-PDSO-G8	2 V	2.16 mm		108 MHz	5.285 mm				33554432 bit	1.7 V					NOR TYPE		5.285 mm			1.8
PC28F128J3D75B	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	80 mA	8388608 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES		YES	BOTTOM		S-PBGA-B64						Not Qualified			134217728 bit		4/8		30	260	NOR TYPE	.00012 Amp		YES	75 ns		NO
N25Q032A31ESE40E	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			33554432 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel	32MX1	32M	-40 Cel					DUAL		S-PDSO-G8	2 V	2.16 mm		108 MHz	5.285 mm				33554432 bit	1.7 V					NOR TYPE		5.285 mm			1.8
N25Q128A31ESEH0E	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			134217728 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel	128MX1	128M	-40 Cel					DUAL		S-PDSO-G8	2 V	2.16 mm		108 MHz	5.285 mm				134217728 bit	1.7 V					NOR TYPE		5.285 mm			1.8
M25PX32SVZM3EBA	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	4194304 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	125 Cel	4MX8	4M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		33554432 bit						NOR TYPE	.00001 Amp
N25Q064A13ESEDFF	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		20 mA	8388608 words	3			8	SMALL OUTLINE	SOP8,.3	1			1.27 mm	85 Cel	8MX8	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.285 mm		SPI		67108864 bit	2.7 V					NOR TYPE	.0001 Amp	5.285 mm			3
N25Q064A13E12D0F	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			20 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	108 MHz		Not Qualified	SPI		67108864 bit						NOR TYPE	.0001 Amp
N25Q064A33ESEA0E	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			67108864 words	3			1	SMALL OUTLINE					1.27 mm	125 Cel	64MX1	64M	-40 Cel					DUAL		S-PDSO-G8	3.6 V	2.16 mm		108 MHz	5.285 mm				67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			5.285 mm			3
MT28F640J3FK-115MET	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	80 mA	4194304 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	4MX16	4M	-40 Cel	64	YES	Tin/Lead (Sn/Pb)	YES	BOTTOM		S-PBGA-B64						Not Qualified			67108864 bit		4/8	e0			NOR TYPE	.00012 Amp		YES	115 ns		NO
M25PX64-VZM6TPB	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories		1 mm	85 Cel	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		67108864 bit						NOR TYPE	.00001 Amp
M25PX16SOVZM6E	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	2097152 words			2.5/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		16777216 bit						NOR TYPE	.00001 Amp
M25PE40-VMW6TP	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		15 mA	524288 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel	512KX8	512K	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3.6 V	2.16 mm	100000 Write/Erase Cycles	75 MHz	5.285 mm	Not Qualified	SPI		4194304 bit	2.7 V			30	260	NOR TYPE	.00001 Amp	5.285 mm			2.7
N25Q128A23ESE40E	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			134217728 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel	128MX1	128M	-40 Cel					DUAL		S-PDSO-G8	3.6 V	2.16 mm		108 MHz	5.285 mm				134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			5.285 mm			3
N25Q064A43ESEA0F	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			67108864 words	3			1	SMALL OUTLINE					1.27 mm	125 Cel	64MX1	64M	-40 Cel					DUAL		S-PDSO-G8	3.6 V	2.16 mm		108 MHz	5.285 mm				67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			5.285 mm			3
N25Q064A13ESEH0G	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			67108864 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel	64MX1	64M	-40 Cel					DUAL		S-PDSO-G8	3.6 V	2.16 mm		108 MHz	5.285 mm				67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			5.285 mm			3
N25Q128A23ESEA0G	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			134217728 words	3			1	SMALL OUTLINE					1.27 mm	125 Cel	128MX1	128M	-40 Cel					DUAL		S-PDSO-G8	3.6 V	2.16 mm		108 MHz	5.285 mm				134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			5.285 mm			3
N25Q128A41ESEH0E	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			134217728 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel	128MX1	128M	-40 Cel					DUAL		S-PDSO-G8	2 V	2.16 mm		108 MHz	5.285 mm				134217728 bit	1.7 V					NOR TYPE		5.285 mm			1.8
PC28F640P30B85A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	28 mA	4194304 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	4MX16	4M	-40 Cel	4,63	YES			BOTTOM		S-PBGA-B64						Not Qualified		BOTTOM	67108864 bit		4				NOR TYPE	.000035 Amp		YES	85 ns		NO
PC28F640J3D75B	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	80 mA	4194304 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	4MX16	4M	-40 Cel	64	YES		YES	BOTTOM		S-PBGA-B64						Not Qualified			67108864 bit		4/8		30	260	NOR TYPE	.00012 Amp		YES	75 ns		NO
M25P32-VMW6TPB	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		20 mA	4194304 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel	4MX8	4M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3.6 V	2.16 mm	100000 Write/Erase Cycles	75 MHz	5.285 mm	Not Qualified	SPI		33554432 bit	2.7 V			30	260	NOR TYPE	.00001 Amp	5.285 mm			2.7
N25Q064A13ESEDFE	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		20 mA	8388608 words	3			8	SMALL OUTLINE	SOP8,.3	1			1.27 mm	85 Cel	8MX8	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.285 mm		SPI		67108864 bit	2.7 V					NOR TYPE	.0001 Amp	5.285 mm			3
N25Q128A11ESE40E	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			134217728 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel	128MX1	128M	-40 Cel					DUAL		S-PDSO-G8	2 V	2.16 mm		108 MHz	5.285 mm				134217728 bit	1.7 V			30	260	NOR TYPE		5.285 mm			1.8
PC28F640J3D75D	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	80 mA	4194304 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	4MX16	4M	-40 Cel	64	YES		YES	BOTTOM		S-PBGA-B64						Not Qualified			67108864 bit		4/8		30	260	NOR TYPE	.00012 Amp		YES	75 ns		NO
M25PX32STVMW6EBA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			4194304 words	3			8	SMALL OUTLINE					1.27 mm	85 Cel	4MX8	4M	-40 Cel					DUAL		S-PDSO-G8	3.6 V	2.16 mm		75 MHz	5.285 mm				33554432 bit	2.7 V					NOR TYPE		5.285 mm			2.7
N25Q128A43ESEH0E	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			134217728 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel	128MX1	128M	-40 Cel					DUAL		S-PDSO-G8	3.6 V	2.16 mm		108 MHz	5.285 mm				134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			5.285 mm			3
M25PE80VMW6P	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		15 mA	1048576 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel	1MX8	1M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3.6 V	2.16 mm	100000 Write/Erase Cycles	75 MHz	5.285 mm	Not Qualified	SPI		8388608 bit	2.7 V			30	260	NOR TYPE	.00001 Amp	5.285 mm			2.7
N25Q064A13ESEH0F	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		20 mA	67108864 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel	64MX1	64M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.285 mm	Not Qualified	SPI		67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	5.285 mm			3
M25PX64STVZM3TPBA	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories		1 mm	125 Cel	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		67108864 bit						NOR TYPE	.00001 Amp
M25PX32-VZM3EA	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	4194304 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	125 Cel	4MX8	4M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		33554432 bit						NOR TYPE	.00001 Amp
N25Q064A33E12DFF	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			20 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	108 MHz		Not Qualified	SPI		67108864 bit						NOR TYPE	.0001 Amp
N25Q128A43ESEH0F	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			134217728 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel	128MX1	128M	-40 Cel					DUAL		S-PDSO-G8	3.6 V	2.16 mm		108 MHz	5.285 mm				134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			5.285 mm			3
N25Q128A11ESEH0G	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			134217728 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel	128MX1	128M	-40 Cel					DUAL		S-PDSO-G8	2 V	2.16 mm		108 MHz	5.285 mm				134217728 bit	1.7 V					NOR TYPE		5.285 mm			1.8
M25PX16-VZM6G	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	2097152 words			2.5/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		16777216 bit						NOR TYPE	.00001 Amp
N25Q032A31ESEA0F	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			33554432 words	1.8			1	SMALL OUTLINE					1.27 mm	125 Cel	32MX1	32M	-40 Cel					DUAL		S-PDSO-G8	2 V	2.16 mm		108 MHz	5.285 mm				33554432 bit	1.7 V					NOR TYPE		5.285 mm			1.8
N25Q064A23ESEA0F	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			67108864 words	3			1	SMALL OUTLINE					1.27 mm	125 Cel	64MX1	64M	-40 Cel					DUAL		S-PDSO-G8	3.6 V	2.16 mm		108 MHz	5.285 mm				67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			5.285 mm			3
N25Q128A21B1240E	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			20 mA	16777216 words	1.8		1.8	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	16MX8	16M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	108 MHz		Not Qualified	SPI		134217728 bit						NOR TYPE	.00001 Amp
M25PE80VMW6TP	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		15 mA	1048576 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel	1MX8	1M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3.6 V	2.16 mm	100000 Write/Erase Cycles	75 MHz	5.285 mm	Not Qualified	SPI		8388608 bit	2.7 V					NOR TYPE	.00001 Amp	5.285 mm			2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.