SQUARE Flash Memory 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

RC28F640P30TF65A

Micron Technology

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

16K,64K

50 mA

4194304 words

NO

1.8,1.8/3.3

16

GRID ARRAY

BGA64,8X8,40

Flash Memories

1 mm

85 Cel

4MX16

4M

-40 Cel

4,63

YES

BOTTOM

S-PBGA-B64

Not Qualified

TOP

67108864 bit

8

NOR TYPE

.000055 Amp

YES

65 ns

NO

RC28F256P30B85D

Micron Technology

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

16K,64K

51 mA

16777216 words

NO

1.8,1.8/3.3

16

GRID ARRAY

BGA64,8X8,40

Flash Memories

1 mm

85 Cel

16MX16

16M

-40 Cel

4,255

YES

BOTTOM

S-PBGA-B64

Not Qualified

BOTTOM

268435456 bit

4

NOR TYPE

.000115 Amp

YES

85 ns

NO

M29DW256G60ZA1E

Micron Technology

FLASH

COMMERCIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

32K,128K

10 mA

16777216 words

YES

3/3.3

16

GRID ARRAY

BGA64,8X8,40

Flash Memories

1 mm

70 Cel

16MX16

16M

0 Cel

8,126

YES

YES

BOTTOM

S-PBGA-B64

Not Qualified

BOTTOM/TOP

268435456 bit

NOR TYPE

.0001 Amp

YES

60 ns

YES

M29DW256G60ZA6F

Micron Technology

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

32K,128K

10 mA

16777216 words

YES

3/3.3

16

GRID ARRAY

BGA64,8X8,40

Flash Memories

1 mm

85 Cel

16MX16

16M

-40 Cel

8,126

YES

YES

BOTTOM

S-PBGA-B64

Not Qualified

BOTTOM/TOP

268435456 bit

NOR TYPE

.0001 Amp

YES

60 ns

YES

M45PE40-VMW6TP

Micron Technology

FLASH

INDUSTRIAL

8

SOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

15 mA

262144 words

3

3/3.3

8

SMALL OUTLINE

SOP8,.3

Flash Memories

20

1.27 mm

85 Cel

256KX8

256K

-40 Cel

DUAL

HARDWARE/SOFTWARE

S-PDSO-G8

3.6 V

2.16 mm

100000 Write/Erase Cycles

75 MHz

5.285 mm

Not Qualified

SPI

2097152 bit

2.7 V

30

260

NOR TYPE

.00001 Amp

5.285 mm

2.7

RC28F256P30B85A

Micron Technology

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

16K,64K

51 mA

16777216 words

NO

1.8,1.8/3.3

16

GRID ARRAY

BGA64,8X8,40

Flash Memories

1 mm

85 Cel

16MX16

16M

-40 Cel

4,255

YES

BOTTOM

S-PBGA-B64

Not Qualified

BOTTOM

268435456 bit

4

NOR TYPE

.000115 Amp

YES

85 ns

NO

M29DW256G60ZS1F

Micron Technology

FLASH

COMMERCIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

32K,128K

10 mA

16777216 words

YES

3/3.3

16

GRID ARRAY

BGA64,8X8,40

Flash Memories

1 mm

70 Cel

16MX16

16M

0 Cel

8,126

YES

YES

BOTTOM

S-PBGA-B64

Not Qualified

BOTTOM/TOP

268435456 bit

NOR TYPE

.0001 Amp

YES

60 ns

YES

M29DW127G60NF6E

Micron Technology

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

64K,256K

15 mA

8388608 words

YES

3/3.3

16

GRID ARRAY

BGA64,8X8,40

8

Flash Memories

1 mm

85 Cel

8MX16

8M

-40 Cel

8,62

YES

YES

BOTTOM

S-PBGA-B64

Not Qualified

BOTTOM/TOP

134217728 bit

8/16

NOR TYPE

.0001 Amp

YES

60 ns

YES

RC28F640P30T85B

Micron Technology

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

16K,64K

28 mA

4194304 words

NO

1.8,1.8/3.3

16

GRID ARRAY

BGA64,8X8,40

Flash Memories

1 mm

85 Cel

4MX16

4M

-40 Cel

4,63

YES

BOTTOM

S-PBGA-B64

Not Qualified

BOTTOM

67108864 bit

4

NOR TYPE

.000035 Amp

YES

85 ns

NO

PC48F4400P0VB00D

Micron Technology

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

16K,64K

51 mA

33554432 words

NO

1.8,1.8/3.3

16

GRID ARRAY

BGA64,8X8,40

Flash Memories

1 mm

85 Cel

32MX16

32M

-40 Cel

8, 510

YES

BOTTOM

S-PBGA-B64

Not Qualified

BOTTOM

536870912 bit

4

NOR TYPE

.000005 Amp

YES

85 ns

NO

M29DW256G60ZA6E

Micron Technology

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

32K,128K

10 mA

16777216 words

YES

3/3.3

16

GRID ARRAY

BGA64,8X8,40

Flash Memories

1 mm

85 Cel

16MX16

16M

-40 Cel

8,126

YES

YES

BOTTOM

S-PBGA-B64

Not Qualified

BOTTOM/TOP

268435456 bit

NOR TYPE

.0001 Amp

YES

60 ns

YES

RC28F256P33BFB

Micron Technology

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

16K,64K

31 mA

16777216 words

NO

2.5/3.3

16

GRID ARRAY

BGA64,8X8,40

Flash Memories

1 mm

85 Cel

16MX16

16M

-40 Cel

4,255

YES

BOTTOM

S-PBGA-B64

Not Qualified

BOTTOM

268435456 bit

NOR TYPE

.00021 Amp

YES

95 ns

NO

M29W128GSL70ZA6F

Micron Technology

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

20 mA

8388608 words

YES

3/3.3

16

GRID ARRAY

BGA64,8X8,40

8

Flash Memories

1 mm

85 Cel

8MX16

8M

-40 Cel

128

YES

YES

BOTTOM

S-PBGA-B64

Not Qualified

134217728 bit

8/16

NOR TYPE

.0001 Amp

YES

70 ns

YES

PC48F4400P0VB00B

Micron Technology

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

16K,64K

51 mA

33554432 words

NO

1.8,1.8/3.3

16

GRID ARRAY

BGA64,8X8,40

Flash Memories

1 mm

85 Cel

32MX16

32M

-40 Cel

8, 510

YES

BOTTOM

S-PBGA-B64

Not Qualified

BOTTOM

536870912 bit

4

NOR TYPE

.000005 Amp

YES

85 ns

NO

PC48F4400P0VB0EB

Micron Technology

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

16K,64K

31 mA

33554432 words

NO

1.8,1.8/3.3

16

GRID ARRAY

BGA64,8X8,40

Flash Memories

1 mm

85 Cel

32MX16

32M

-40 Cel

8, 510

YES

BOTTOM

S-PBGA-B64

Not Qualified

BOTTOM/TOP

536870912 bit

NOR TYPE

.00042 Amp

YES

100 ns

NO

M29W128GSL70ZS6F

Micron Technology

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

20 mA

8388608 words

YES

3/3.3

16

GRID ARRAY

BGA64,8X8,40

8

Flash Memories

1 mm

85 Cel

8MX16

8M

-40 Cel

128

YES

YES

BOTTOM

S-PBGA-B64

Not Qualified

134217728 bit

8/16

NOR TYPE

.0001 Amp

YES

70 ns

YES

RC28F320J3D75A

Micron Technology

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

80 mA

2097152 words

NO

3/3.3

16

GRID ARRAY

BGA64,8X8,40

8

Flash Memories

1 mm

85 Cel

2MX16

2M

-40 Cel

32

YES

YES

BOTTOM

S-PBGA-B64

Not Qualified

33554432 bit

4/8

30

235

NOR TYPE

.00012 Amp

YES

75 ns

NO

M29DW256G60ZA1F

Micron Technology

FLASH

COMMERCIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

32K,128K

10 mA

16777216 words

YES

3/3.3

16

GRID ARRAY

BGA64,8X8,40

Flash Memories

1 mm

70 Cel

16MX16

16M

0 Cel

8,126

YES

YES

BOTTOM

S-PBGA-B64

Not Qualified

BOTTOM/TOP

268435456 bit

NOR TYPE

.0001 Amp

YES

60 ns

YES

M29W160EB80ZS3SE

Micron Technology

FLASH

AUTOMOTIVE

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

16K,8K,32K,64K

10 mA

1048576 words

YES

3/3.3

16

GRID ARRAY

BGA64,8X8,40

8

Flash Memories

1 mm

125 Cel

1MX16

1M

-40 Cel

1,2,1,31

YES

YES

BOTTOM

S-PBGA-B64

Not Qualified

BOTTOM

16777216 bit

NOR TYPE

.0001 Amp

YES

80 ns

YES

RC28F640P30T85A

Micron Technology

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

16K,64K

28 mA

4194304 words

NO

1.8,1.8/3.3

16

GRID ARRAY

BGA64,8X8,40

Flash Memories

1 mm

85 Cel

4MX16

4M

-40 Cel

4,63

YES

BOTTOM

S-PBGA-B64

Not Qualified

TOP

67108864 bit

4

NOR TYPE

.000035 Amp

YES

85 ns

NO

RC28F640J3D75D

Micron Technology

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

80 mA

4194304 words

NO

3/3.3

16

GRID ARRAY

BGA64,8X8,40

8

Flash Memories

1 mm

85 Cel

4MX16

4M

-40 Cel

64

YES

YES

BOTTOM

S-PBGA-B64

Not Qualified

67108864 bit

4/8

30

235

NOR TYPE

.00012 Amp

YES

75 ns

NO

M29DW127G60NF6F

Micron Technology

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

64K,256K

15 mA

8388608 words

YES

3/3.3

16

GRID ARRAY

BGA64,8X8,40

8

Flash Memories

1 mm

85 Cel

8MX16

8M

-40 Cel

8,62

YES

YES

BOTTOM

S-PBGA-B64

Not Qualified

BOTTOM/TOP

134217728 bit

8/16

NOR TYPE

.0001 Amp

YES

60 ns

YES

M29W160EB80ZS3SF

Micron Technology

FLASH

AUTOMOTIVE

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

16K,8K,32K,64K

10 mA

1048576 words

YES

3/3.3

16

GRID ARRAY

BGA64,8X8,40

8

Flash Memories

1 mm

125 Cel

1MX16

1M

-40 Cel

1,2,1,31

YES

YES

BOTTOM

S-PBGA-B64

Not Qualified

BOTTOM

16777216 bit

NOR TYPE

.0001 Amp

YES

80 ns

YES

M29W128GL70ZA6DE

Micron Technology

FLASH

INDUSTRIAL

64

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

20 mA

8388608 words

YES

3/3.3

16

GRID ARRAY

BGA64,8X8,40

8

Flash Memories

1 mm

85 Cel

8MX16

8M

-40 Cel

128

YES

YES

BOTTOM

S-PBGA-B64

Not Qualified

134217728 bit

8/16

NOR TYPE

.0001 Amp

YES

70 ns

YES

M25PX64SVZM6GB

Micron Technology

FLASH

INDUSTRIAL

24

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

SERIAL

15 mA

8388608 words

3/3.3

8

GRID ARRAY

BGA24,5X5,40

Flash Memories

1 mm

85 Cel

8MX8

8M

-40 Cel

BOTTOM

HARDWARE/SOFTWARE

S-PBGA-B24

100000 Write/Erase Cycles

75 MHz

Not Qualified

SPI

67108864 bit

NOR TYPE

.00001 Amp

N25Q032A11ESEA0F

Micron Technology

FLASH

AUTOMOTIVE

8

SOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

4194304 words

1.8

8

SMALL OUTLINE

1.27 mm

125 Cel

4MX8

4M

-40 Cel

DUAL

S-PDSO-G8

2 V

2.16 mm

108 MHz

5.285 mm

33554432 bit

1.7 V

30

260

5.285 mm

1.8

M25PX32-VMW6EA

Micron Technology

FLASH

INDUSTRIAL

8

SOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

4194304 words

3

8

SMALL OUTLINE

1.27 mm

85 Cel

4MX8

4M

-40 Cel

DUAL

S-PDSO-G8

3.6 V

2.16 mm

75 MHz

5.285 mm

33554432 bit

2.7 V

NOR TYPE

5.285 mm

2.7

N25Q064A13ESE40G

Micron Technology

FLASH

INDUSTRIAL

8

SOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

20 mA

1048576 words

3

3/3.3

64

SMALL OUTLINE

SOP8,.3

Flash Memories

20

1.27 mm

85 Cel

1MX64

1M

-40 Cel

DUAL

HARDWARE/SOFTWARE

S-PDSO-G8

3.6 V

2.16 mm

100000 Write/Erase Cycles

108 MHz

5.285 mm

Not Qualified

SPI

67108864 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

5.285 mm

3

M25PX16STVZM3EB

Micron Technology

FLASH

AUTOMOTIVE

24

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

SERIAL

15 mA

2097152 words

3/3.3

8

GRID ARRAY

BGA24,5X5,40

Flash Memories

20

1 mm

125 Cel

2MX8

2M

-40 Cel

BOTTOM

HARDWARE/SOFTWARE

S-PBGA-B24

100000 Write/Erase Cycles

75 MHz

Not Qualified

SPI

16777216 bit

NOR TYPE

.00001 Amp

N25Q064A33E12D0G

Micron Technology

FLASH

INDUSTRIAL

24

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

SERIAL

20 mA

8388608 words

3/3.3

8

GRID ARRAY

BGA24,5X5,40

Flash Memories

20

1 mm

85 Cel

8MX8

8M

-40 Cel

BOTTOM

HARDWARE/SOFTWARE

S-PBGA-B24

100000 Write/Erase Cycles

108 MHz

Not Qualified

SPI

67108864 bit

NOR TYPE

.0001 Amp

M25PX16SOVZM6P

Micron Technology

FLASH

INDUSTRIAL

24

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

SERIAL

15 mA

2097152 words

2.5/3.3

8

GRID ARRAY

BGA24,5X5,40

Flash Memories

20

1 mm

85 Cel

2MX8

2M

-40 Cel

BOTTOM

HARDWARE/SOFTWARE

S-PBGA-B24

100000 Write/Erase Cycles

75 MHz

Not Qualified

SPI

16777216 bit

NOR TYPE

.00001 Amp

M25PX64-VZM6G

Micron Technology

FLASH

INDUSTRIAL

24

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

SERIAL

15 mA

8388608 words

3/3.3

8

GRID ARRAY

BGA24,5X5,40

Flash Memories

1 mm

85 Cel

8MX8

8M

-40 Cel

BOTTOM

HARDWARE/SOFTWARE

S-PBGA-B24

100000 Write/Erase Cycles

75 MHz

Not Qualified

SPI

67108864 bit

NOR TYPE

.00001 Amp

N25Q064A43ESE40G

Micron Technology

FLASH

INDUSTRIAL

8

SOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

67108864 words

3

1

SMALL OUTLINE

1.27 mm

85 Cel

64MX1

64M

-40 Cel

DUAL

S-PDSO-G8

3.6 V

2.16 mm

108 MHz

5.285 mm

67108864 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

5.285 mm

3

M25PX64SVZM3TGA

Micron Technology

FLASH

AUTOMOTIVE

24

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

SERIAL

15 mA

8388608 words

3/3.3

8

GRID ARRAY

BGA24,5X5,40

Flash Memories

1 mm

125 Cel

8MX8

8M

-40 Cel

BOTTOM

HARDWARE/SOFTWARE

S-PBGA-B24

100000 Write/Erase Cycles

75 MHz

Not Qualified

SPI

67108864 bit

NOR TYPE

.00001 Amp

M25PX64SOVZM3TGA

Micron Technology

FLASH

AUTOMOTIVE

24

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

SERIAL

15 mA

8388608 words

3/3.3

8

GRID ARRAY

BGA24,5X5,40

Flash Memories

1 mm

125 Cel

8MX8

8M

-40 Cel

BOTTOM

HARDWARE/SOFTWARE

S-PBGA-B24

100000 Write/Erase Cycles

75 MHz

Not Qualified

SPI

67108864 bit

NOR TYPE

.00001 Amp

N25Q064A13ESE4MF

Micron Technology

FLASH

INDUSTRIAL

8

SOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

67108864 words

3

1

SMALL OUTLINE

1.27 mm

85 Cel

64MX1

64M

-40 Cel

DUAL

S-PDSO-G8

3.6 V

2.16 mm

108 MHz

5.285 mm

67108864 bit

2.7 V

NOR TYPE

5.285 mm

2.7

M25PX16-VZM6E

Micron Technology

FLASH

INDUSTRIAL

24

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

SERIAL

15 mA

2097152 words

2.5/3.3

8

GRID ARRAY

BGA24,5X5,40

Flash Memories

20

1 mm

85 Cel

2MX8

2M

-40 Cel

BOTTOM

HARDWARE/SOFTWARE

S-PBGA-B24

100000 Write/Erase Cycles

75 MHz

Not Qualified

SPI

16777216 bit

NOR TYPE

.00001 Amp

M25PX32-VMW3T

Micron Technology

FLASH

AUTOMOTIVE

8

SOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

4194304 words

3

8

SMALL OUTLINE

1.27 mm

125 Cel

4MX8

4M

-40 Cel

DUAL

S-PDSO-G8

3.6 V

2.16 mm

75 MHz

5.285 mm

33554432 bit

2.7 V

5.285 mm

2.7

M25PX32SOVMW6TA

Micron Technology

FLASH

INDUSTRIAL

8

SOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

4194304 words

3

8

SMALL OUTLINE

1.27 mm

85 Cel

4MX8

4M

-40 Cel

DUAL

S-PDSO-G8

3.6 V

2.16 mm

75 MHz

5.285 mm

33554432 bit

2.7 V

5.285 mm

2.7

N25Q064A13ESEA0F

Micron Technology

FLASH

AUTOMOTIVE

8

SOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

67108864 words

3

1

SMALL OUTLINE

1.27 mm

125 Cel

64MX1

64M

-40 Cel

DUAL

S-PDSO-G8

3.6 V

2.16 mm

108 MHz

5.285 mm

67108864 bit

2.7 V

NOR TYPE

5.285 mm

3

N25Q128A21T1240F

Micron Technology

FLASH

INDUSTRIAL

24

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

SERIAL

20 mA

16777216 words

1.8

1.8

8

GRID ARRAY

BGA24,5X5,40

Flash Memories

20

1 mm

85 Cel

16MX8

16M

-40 Cel

BOTTOM

HARDWARE/SOFTWARE

S-PBGA-B24

100000 Write/Erase Cycles

108 MHz

Not Qualified

SPI

134217728 bit

NOR TYPE

.00001 Amp

N25Q032A41ESE40E

Micron Technology

FLASH

INDUSTRIAL

8

SOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

33554432 words

1.8

1

SMALL OUTLINE

1.27 mm

85 Cel

32MX1

32M

-40 Cel

DUAL

S-PDSO-G8

2 V

2.16 mm

108 MHz

5.285 mm

33554432 bit

1.7 V

NOR TYPE

5.285 mm

1.8

M25PX32SOVZM6E

Micron Technology

FLASH

INDUSTRIAL

24

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

SERIAL

15 mA

4194304 words

3/3.3

8

GRID ARRAY

BGA24,5X5,40

Flash Memories

20

1 mm

85 Cel

4MX8

4M

-40 Cel

BOTTOM

HARDWARE/SOFTWARE

S-PBGA-B24

100000 Write/Erase Cycles

75 MHz

Not Qualified

SPI

33554432 bit

NOR TYPE

.00001 Amp

M25PX32SOVMW3E

Micron Technology

FLASH

AUTOMOTIVE

8

SOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

4194304 words

3

8

SMALL OUTLINE

1.27 mm

125 Cel

4MX8

4M

-40 Cel

DUAL

S-PDSO-G8

3.6 V

2.16 mm

75 MHz

5.285 mm

33554432 bit

2.7 V

NOR TYPE

5.285 mm

2.7

M25PX32-VMW6TA

Micron Technology

FLASH

INDUSTRIAL

8

SOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

4194304 words

3

8

SMALL OUTLINE

1.27 mm

85 Cel

4MX8

4M

-40 Cel

DUAL

S-PDSO-G8

3.6 V

2.16 mm

75 MHz

5.285 mm

33554432 bit

2.7 V

5.285 mm

2.7

M25PX32-VZM3FA

Micron Technology

FLASH

AUTOMOTIVE

24

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

SERIAL

15 mA

4194304 words

3/3.3

8

GRID ARRAY

BGA24,5X5,40

Flash Memories

20

1 mm

125 Cel

4MX8

4M

-40 Cel

BOTTOM

HARDWARE/SOFTWARE

S-PBGA-B24

100000 Write/Erase Cycles

75 MHz

Not Qualified

SPI

33554432 bit

NOR TYPE

.00001 Amp

N25Q032A41ESEH0G

Micron Technology

FLASH

INDUSTRIAL

8

SOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

33554432 words

1.8

1

SMALL OUTLINE

1.27 mm

85 Cel

32MX1

32M

-40 Cel

DUAL

S-PDSO-G8

2 V

2.16 mm

108 MHz

5.285 mm

33554432 bit

1.7 V

NOR TYPE

5.285 mm

1.8

N25Q032A41ESEA0G

Micron Technology

FLASH

AUTOMOTIVE

8

SOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

33554432 words

1.8

1

SMALL OUTLINE

1.27 mm

125 Cel

32MX1

32M

-40 Cel

DUAL

S-PDSO-G8

2 V

2.16 mm

108 MHz

5.285 mm

33554432 bit

1.7 V

NOR TYPE

5.285 mm

1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.