COMMERCIAL Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MT29F64G08AFAAAWP:A	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		1M	50 mA	8589934592 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		8GX8	8G	0 Cel	8K	YES		YES	DUAL			R-PDSO-G48							Not Qualified				68719476736 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MZ-V7S2T0BW	Samsung	FLASH MODULE	COMMERCIAL		SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD					2000000000000 words				8	MICROELECTRONIC ASSEMBLY						70 Cel		2TX8	2T	0 Cel					SINGLE			R-XSMA-N											16000000000000 bit							MLC NAND TYPE
SSDPE2KX040T801	Intel	FLASH	COMMERCIAL			RECTANGULAR			1	CMOS						4398046511104 words				8							70 Cel		4TX8	4T	0 Cel																			35184372088832 bit							TLC NAND TYPE
SST25PF020B-80-4C-QAE	Microchip Technology	FLASH	COMMERCIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		30 mA	2097152 words			2.5/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	100	1.27 mm	70 Cel	3-STATE	2MX1	2M	0 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	80 MHz	5 mm	Not Qualified		SPI		2097152 bit	2.3 V			e3			NOR TYPE	.00003 Amp	6 mm
SST25VF080B-50-4C-QAF-T	Microchip Technology	FLASH	COMMERCIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		30 mA	8388608 words			3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	100	1.27 mm	70 Cel	3-STATE	8MX1	8M	0 Cel			NICKEL PALLADIUM GOLD		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified		SPI		8388608 bit	2.7 V			e4			NOR TYPE	.00003 Amp	6 mm
SST39SF020A-55-4C-WHE	Microchip Technology	FLASH	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		Flash Memories	100	.5 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	64	YES	MATTE TIN		DUAL	1		R-PDSO-G32	3	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified				2097152 bit	4.5 V			e3	40	260	NOR TYPE	.0001 Amp	12.4 mm		55 ns	5	YES
SST39SF040-55-4C-NHE	Microchip Technology	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	100	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	128	YES	MATTE TIN		QUAD	1		R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified				4194304 bit	4.5 V			e3	40	245	NOR TYPE	.0001 Amp	13.97 mm		55 ns	5	YES
SST39VF010-70-4C-NHE	Microchip Technology	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	30 mA	131072 words	3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	100	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	32	YES	Matte Tin (Sn)		QUAD	1		R-PQCC-J32	3	3.6 V	2.8448 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified				1048576 bit	2.7 V			e3	40	245	NOR TYPE	.000015 Amp	13.97 mm		70 ns	3	YES
SST39VF3201-70-4C-EKE-T	Microchip Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K	35 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	100	.5 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	1K	YES	MATTE TIN		DUAL	1		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
AM29F010B-70JC	Spansion	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel		128KX8	128K	0 Cel	8	YES	TIN LEAD		QUAD			R-PQCC-J32	3	5.5 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified				1048576 bit	4.5 V			e0		240	NOR TYPE	.000005 Amp	13.97 mm		70 ns	5	YES
AM29F400BB-70EC	Spansion	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL			R-PDSO-G48	3	5.5 V	1.2 mm	1000000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.000005 Amp	18.4 mm		70 ns	5	YES
AM29F800BB-70ED	Spansion	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	5.5 V	1.2 mm	1000000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.001 Amp	18.4 mm		70 ns	5	YES
AM29F800BB-90ECT	Advanced Micro Devices	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			16	SMALL OUTLINE, THIN PROFILE		8		20	.5 mm	70 Cel		512KX16	512K	0 Cel					DUAL			R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	MINIMUM 1,000,000 PROGRAM/ERASE CYCLES PER SECTOR; 20-YEAR DATA RETENTION; BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		90 ns	5
AM29F800BB-90EC\T	Spansion	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			16	SMALL OUTLINE, THIN PROFILE		8		20	.5 mm	70 Cel		512KX16	512K	0 Cel			TIN LEAD		DUAL			R-PDSO-G48	3	5.5 V	1.2 mm			12 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	MINIMUM 1,000,000 PROGRAM/ERASE CYCLES PER SECTOR; 20-YEAR DATA RETENTION; BOTTOM BOOT BLOCK		e0			NOR TYPE		18.4 mm		90 ns	5
AM29LV160DT-70EC	Spansion	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		1MX16	1M	0 Cel	1,2,1,31	YES	TIN LEAD	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e0		260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
AM29LV160DT70EC	Advanced Micro Devices	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		1MX16	1M	0 Cel	1,2,1,31	YES	Tin/Lead (Sn/Pb)	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			TOP	16777216 bit	2.7 V	MIN 1000K WRITE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
CAT28F001L-12T	Onsemi	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	70 Cel		128KX8	128K	0 Cel	1,2,1	YES	TIN		DUAL			R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified			TOP	1048576 bit	4.5 V	TOP BOOT BLOCK		e3		260	NOR TYPE	.000001 Amp	42.03 mm		120 ns	12	NO
H27U1G8F2BTR-BC	Sk Hynix	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	30 mA	134217728 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		128MX8	128M	0 Cel	1K	YES		YES	DUAL			R-PDSO-G48							Not Qualified				1073741824 bit			2K				SLC NAND TYPE	.00005 Amp			20 ns		NO
K9F1G08U0C-PCB0000	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		128MX8	128M	0 Cel					DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm					1073741824 bit	2.7 V	CONTAINS ADDITIONAL 32M BIT SPARE MEMORY					SLC NAND TYPE		18.4 mm			2.7
LH28F320SKTD-ZR	Sharp Corporation	FLASH	COMMERCIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	70 Cel		2MX16	2M	0 Cel					DUAL			R-PDSO-G56		3.6 V	1.19 mm			14 mm	Not Qualified				33554432 bit	2.7 V						NOR TYPE		18.4 mm		120 ns	3
M28F512-15XB1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		YES	TIN LEAD		DUAL			R-PDIP-T32		5.25 V	5.08 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified				524288 bit	4.75 V			e0			NOR TYPE	.0001 Amp	41.91 mm		15 ns	12	NO
MT29F64G08AECABH1-10Z:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		1M	50 mA	8589934592 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel		8GX8	8G	0 Cel	8K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified				68719476736 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F64G08AKCBBH2-12:B	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	70 Cel		8GX8	8G	0 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B100		3.6 V	1.2 mm			12 mm					68719476736 bit	2.7 V			e1	30	260	SLC NAND TYPE		18 mm			2.7
SST25VF020B-80-4C-SAE-T	Microchip Technology	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		30 mA	2097152 words			3/3.3	1	SMALL OUTLINE	SOP8,.23		Flash Memories	100	1.27 mm	70 Cel	3-STATE	2MX1	2M	0 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	3.9 mm	Not Qualified		SPI		2097152 bit	2.7 V			e3	40	260	NOR TYPE	.00002 Amp	4.9 mm
SST25VF032B-50-4C-S2AF	Microchip Technology	FLASH	COMMERCIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			1	SMALL OUTLINE					1.27 mm	70 Cel		32MX1	32M	0 Cel			NICKEL PALLADIUM GOLD		DUAL			S-PDSO-G8		3.6 V	2.16 mm		50 MHz	5.275 mm	Not Qualified				33554432 bit	2.7 V			e4			NOR TYPE		5.275 mm			2.7
SST25VF040B-50-4C-SAF	Microchip Technology	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		30 mA	4194304 words			3/3.3	1	SMALL OUTLINE	SOP8,.23		Flash Memories	100	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel			Matte Tin (Sn)		DUAL	1	SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	10000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified		SPI		4194304 bit	2.7 V			e3			NOR TYPE	.00002 Amp	4.9 mm
SST39SF010A-70-4C-WHE-T	Microchip Technology	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		Flash Memories	100	.5 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	32	YES			DUAL	1		R-PDSO-G32		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified				1048576 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	12.4 mm		70 ns	5	YES
SST39VF1682-70-4C-EKE	Microchip Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	2097152 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	100	.5 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	512	YES	MATTE TIN	YES	DUAL	1		R-PDSO-G48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e3	40	260	NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
AM29F200BB-70ED	Spansion	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		128KX16	128K	0 Cel	1,2,1,3	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	5.5 V	1.2 mm	1000000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm		70 ns	5	YES
AM29F800BB-55SC	Spansion	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL			R-PDSO-G44	3	5.5 V	2.8 mm	1000000 Write/Erase Cycles		13.3 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.001 Amp	28.2 mm		55 ns	5	YES
CAT28F001L-90B	Onsemi	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	70 Cel		128KX8	128K	0 Cel	1,2,1	YES	TIN		DUAL			R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified			BOTTOM	1048576 bit	4.5 V	BOTTOM BOOT BLOCK		e3		260	NOR TYPE	.000001 Amp	42.03 mm		90 ns	12	NO
MT29F32G08AECBBH1-12:B	Micron Technology	FLASH	COMMERCIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, VERY THIN PROFILE					1 mm	70 Cel		4GX8	4G	0 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B100		3.6 V	1 mm			12 mm					34359738368 bit	2.7 V			e1	30	260	SLC NAND TYPE		18 mm			2.7
MTFDCAE004SAJ-1N1	Micron Technology	FLASH	COMMERCIAL			RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED										MICROELECTRONIC ASSEMBLY															UNSPECIFIED			R-XXMA-X							Not Qualified									30	260						5
SST25VF040B-50-4C-QAF-T	Microchip Technology	FLASH	COMMERCIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		30 mA	4194304 words			3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	100	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel			NICKEL PALLADIUM GOLD		DUAL	1	SOFTWARE	R-XDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified		SPI		4194304 bit	2.7 V			e4			NOR TYPE	.00003 Amp	6 mm
SST25VF040B-50-4C-SAF-T	Microchip Technology	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		30 mA	4194304 words			3/3.3	1	SMALL OUTLINE	SOP8,.23		Flash Memories	100	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel			MATTE TIN		DUAL	1	SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified		SPI		4194304 bit	2.7 V			e3			NOR TYPE	.00003 Amp	4.9 mm
SST39VF6401B-70-4C-B1KE-T	Microchip Technology	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K	35 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	2K	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	1		R-PBGA-B48		3.6 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			BOTTOM	67108864 bit	2.7 V			e1			NOR TYPE	.00002 Amp	10 mm	YES	70 ns	3	YES
E28F008SA-120	Intel	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	50 mA	1048576 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	16	YES	TIN LEAD	YES	DUAL			R-PDSO-G40		5.5 V	1.2 mm			10 mm	Not Qualified				8388608 bit	4.5 V	DEEP POWER-DOWN		e0			NOR TYPE	.0000012 Amp	18.4 mm		120 ns	12	NO
AT45D011-SC	Microchip Technology	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		50 mA	1048576 words	5		5	1	SMALL OUTLINE	SOP8,.3		Flash Memories		1.27 mm	70 Cel		1MX1	1M	0 Cel			TIN LEAD		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm		15 MHz	5.27 mm	Not Qualified		SPI		1048576 bit	4.5 V	HARDWARE DATA PROTECTION		e0		240	NOR TYPE	.00002 Amp	5.31 mm			5
E28F016SA-100	Intel	FLASH	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	1048576 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	32	YES		YES	DUAL			R-PDSO-G56		5.5 V	1.2 mm			14 mm	Not Qualified				16777216 bit	4.5 V	ALSO CAN BE CONFIGURED AS 1M X 16	128/256				NOR TYPE	.000005 Amp	18.4 mm		100 ns	12	NO
N28F020-150	Rochester Electronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			262144 words	5			8	CHIP CARRIER					1.27 mm	70 Cel		256KX8	256K	0 Cel			TIN LEAD		QUAD			R-PQCC-J32		5.5 V	3.56 mm			11.43 mm					2097152 bit	4.5 V	100000 ERASE/PROGRAM CYCLES		e0			NOR TYPE		13.97 mm		150 ns	12
AT29C040A-12PC	Atmel	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	256	40 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	2K	NO	TIN LEAD		DUAL			R-PDIP-T32		5.5 V	4.826 mm			15.24 mm	Not Qualified	10 ms		BOTTOM/TOP	4194304 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	256	e0			NOR TYPE	.0001 Amp	42.037 mm		120 ns	5	YES
AT29C256-12JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	Tin/Lead (Sn/Pb)		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm	Not Qualified	10 ms			262144 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	64	e0	12	225	NOR TYPE	.0003 Amp	13.97 mm		120 ns	5	YES
AT29C257-70JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		NO	TIN LEAD		QUAD			R-PQCC-J32	2	5.25 V	3.56 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms			262144 bit	4.75 V	HARDWARE AND SOFTWARE DATA PROTECTION; 10000 CYCLES TYPICAL ENDURANCE	64	e0		225	NOR TYPE	.0003 Amp	13.97 mm		70 ns	5	YES
AT29C257-90JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		NO	Tin/Lead (Sn/Pb)		QUAD			R-PQCC-J32	2	5.5 V	3.56 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms			262144 bit	4.5 V	HARDWARE AND SOFTWARE DATA PROTECTION; 10000 CYCLES TYPICAL ENDURANCE	64	e0	30	225	NOR TYPE	.0003 Amp	13.97 mm		90 ns	5	YES
AT45DB081B-TC	Atmel	FLASH	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		35 mA	1081344 words	3		3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		Flash Memories		.55 mm	70 Cel		1081344X8	1081344	0 Cel			TIN LEAD		DUAL		HARDWARE	R-PDSO-G28	3	3.6 V	1.2 mm		20 MHz	8 mm	Not Qualified		SPI		8650752 bit	2.7 V	ORGANIZED AS 4096 PAGES OF 264 BYTES EACH		e0		240	NOR TYPE	.00001 Amp	11.8 mm			2.7
EPC16QC100	Intel	EEPROM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		90 mA	16777216 words	3.3		3.3	1	FLATPACK	QFP100,.7X.9		Flash Memories		.65 mm	70 Cel	3-STATE	16MX1	16M	0 Cel			TIN LEAD		QUAD			R-PQFP-G100	3	3.6 V	2.15 mm	100000 Write/Erase Cycles	66.7 MHz	14 mm	Not Qualified				16777216 bit	3 V			e0				.00015 Amp	20 mm
P28F001BX-B120	Intel	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1,2,1	YES	TIN LEAD		DUAL			R-PDIP-T32		5.5 V	4.83 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified			BOTTOM	1048576 bit	4.5 V	DEEP POWER-DOWN; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000001 Amp	41.91 mm		120 ns	12	NO
AM29F016D-70E4D	Spansion	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	2097152 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		2MX8	2M	0 Cel	32	YES	MATTE TIN	YES	DUAL			R-PDSO-G40	3	5.5 V	1.2 mm			10 mm	Not Qualified				16777216 bit	4.5 V			e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	5	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.