COMMERCIAL Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MZ-V7S500B/AM	Samsung	FLASH MODULE	COMMERCIAL		SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD					500000000000 words				8	MICROELECTRONIC ASSEMBLY						70 Cel			500GX8	500G					SINGLE			R-XSMA-N										4000000000000 bit						MLC NAND TYPE
N28F001BX-T120	Intel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel		3-STATE	128KX8	128K	1,2,1	YES	TIN LEAD		QUAD			R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified		TOP	1048576 bit	4.5 V	DEEP POWER-DOWN; TOP BOOT BLOCK	e0			NOR TYPE	.000001 Amp	13.97 mm		120 ns	12	NO
P28F001BX-T150	Intel	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	70 Cel		3-STATE	128KX8	128K	1,2,1	YES	TIN LEAD		DUAL			R-PDIP-T32		5.5 V	4.83 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified		TOP	1048576 bit	4.5 V	DEEP POWER-DOWN; TOP BOOT BLOCK	e0			NOR TYPE	.000001 Amp	41.91 mm		150 ns	12	NO
PA28F008SA-85	Intel	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	50 mA	1048576 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63		Flash Memories		1.27 mm	70 Cel		3-STATE	1MX8	1M	16	YES	TIN LEAD	YES	DUAL			R-PDSO-G44		5.5 V	2.95 mm			13.3 mm	Not Qualified			8388608 bit	4.5 V	DEEP POWER-DOWN	e0			NOR TYPE	.0000012 Amp	28.2 mm		85 ns	12	NO
PA28F400BX-B60	Intel	FLASH	COMMERCIAL	40	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	NO LEAD	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		3-STATE	256KX16	256K	1,2,1,3	YES			DUAL			R-PDSO-N40		5.5 V	2.95 mm			13.3 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK				NOR TYPE	.0000012 Amp	28.2 mm		60 ns	12	NO
SST25VF020-20-4C-SAE	Microchip Technology	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		30 mA	2097152 words			3/3.3	1	SMALL OUTLINE	SOP8,.23		Flash Memories	100	1.27 mm	70 Cel		3-STATE	2MX1	2M			MATTE TIN		DUAL	1	SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	20 MHz	3.9 mm	Not Qualified	SPI		2097152 bit	2.7 V		e3	40	260	NOR TYPE	.000015 Amp	4.9 mm
SST39LF400A-55-4C-B3KE	Microchip Technology	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K	30 mA	262144 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	70 Cel		3-STATE	256KX16	256K	128	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	1		R-PBGA-B48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		6 mm	Not Qualified			4194304 bit	3 V		e1	40	260	NOR TYPE	.00002 Amp	8 mm	YES	55 ns	3.3	YES
SST39SF010A-55-4C-NHE-T	Microchip Technology	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	100	1.27 mm	70 Cel		3-STATE	128KX8	128K	32	YES			QUAD	1		R-PQCC-J32		5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			1048576 bit	4.5 V					NOR TYPE	.0001 Amp	13.97 mm		55 ns	5	YES
SST39VF040-70-4C-WHE-T	Microchip Technology	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	30 mA	524288 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		Flash Memories	100	.5 mm	70 Cel		3-STATE	512KX8	512K	128	YES	MATTE TIN		DUAL	1		R-PDSO-G32	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			4194304 bit	2.7 V		e3	40	260	NOR TYPE	.000015 Amp	12.4 mm		70 ns	3	YES
SST39VF800A-70-4C-EKE	Microchip Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K	30 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	100	.5 mm	70 Cel		3-STATE	512KX16	512K	256	YES	MATTE TIN		DUAL	1		R-PDSO-G48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			8388608 bit	2.7 V		e3	40	260	NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
SST39VF800A-70-4C-EKE-T	Microchip Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K	30 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	100	.5 mm	70 Cel		3-STATE	512KX16	512K	256	YES	MATTE TIN		DUAL	1		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			8388608 bit	2.7 V		e3			NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
TMS28F800ZT80BDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel			1MX8	1M					DUAL			R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified		TOP	8388608 bit	4.5 V	CONFG AS 512K X 16; TOP BOOT BLOCK				NOR TYPE		18.4 mm		80 ns	3
TMS28F008LB12CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel			1MX8	1M					DUAL			R-PDSO-G40		3.6 V	1.2 mm			10 mm	Not Qualified		BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK				NOR TYPE		18.4 mm		120 ns	3
TMS28F008ASYB70CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			16	SMALL OUTLINE					1.27 mm	70 Cel			512KX16	512K					DUAL			R-PDSO-G44		3.6 V	2.625 mm			13.3 mm			BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK						28.2 mm		70 ns	3
TMS28F004AFT80BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		3-STATE	512KX8	512K	1,2,1,3	YES			DUAL			R-PDSO-G40		5.5 V	1.2 mm	10000 Write/Erase Cycles		10 mm	Not Qualified		TOP	4194304 bit	4.5 V	USER-SELECTABLE 5V OR 12 V VPP; TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm		80 ns	5	NO
TMS28F800AEYB12CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	70 Cel			1MX8	1M					DUAL			R-PDSO-G40		5.5 V	1.2 mm			10 mm			BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK						18.4 mm		120 ns	5
TMS28F002AFB60BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		3-STATE	256KX8	256K	1,2,1,1	YES			DUAL			R-PDSO-G40		5.5 V	1.2 mm	10000 Write/Erase Cycles		10 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm		60 ns	5	NO
TMS28F200AFB60BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		3-STATE	256KX8	256K	1,2,1,1	YES			DUAL			R-PDSO-G44		5.5 V	2.63 mm	10000 Write/Erase Cycles		13.3 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V	CAN BE CONFG AS 128K X 16; BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm		60 ns	5	NO
TMS28F008AZYT80CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	70 Cel			512KX16	512K					DUAL			R-PDSO-G40		3.6 V	1.2 mm			10 mm			TOP	8388608 bit	2.7 V	TOP BOOT BLOCK						18.4 mm		80 ns	3
TMS28F010A-12C3DDL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel		3-STATE	128KX8	128K		YES			DUAL			R-PDSO-G32		5.5 V	1.2 mm	1000 Write/Erase Cycles		8 mm	Not Qualified			1048576 bit	4.5 V	1000 PROGRAM/ERASE CYCLES		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm		120 ns	12	NO
TMS28F008AVB-120CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE					1.27 mm	70 Cel			1MX8	1M					DUAL			R-PDSO-G40		3.6 V	1.2 mm			10 mm	Not Qualified		BOTTOM	8388608 bit	2.7 V	100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK				NOR TYPE		18.4 mm		120 ns	3
TMS28F010B-90C5FML4	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel		3-STATE	128KX8	128K		YES			QUAD			R-PQCC-J32		5.5 V	3.56 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm		90 ns	12	NO
TMS28F210-15C3DBWL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20		Flash Memories		.5 mm	70 Cel		3-STATE	64KX16	64K		YES			DUAL			R-PDSO-G40		5.5 V	1.2 mm	1000 Write/Erase Cycles		10 mm	Not Qualified			1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	12.4 mm		150 ns	12	NO
TMS28F512-17C3FML	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel			64KX8	64K		YES			QUAD			R-PQCC-J32		5.5 V	3.56 mm	1000 Write/Erase Cycles		11.43 mm	Not Qualified			524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm		170 ns	12	NO
TMS28F800ASYT12BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	70 Cel			1MX8	1M					DUAL			R-PDSO-G40		5.5 V	1.2 mm			10 mm			TOP	8388608 bit	4.5 V	TOP BOOT BLOCK						18.4 mm		120 ns	5
TMS28F800AVYB80BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE					1.27 mm	70 Cel			1MX8	1M					DUAL			R-PDSO-G44		3.6 V	2.625 mm			13.3 mm			BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK						28.2 mm		80 ns	3
TMS28F400AFT70CDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		3-STATE	512KX8	512K	1,2,1,3	YES			DUAL			R-PDSO-G48		5.5 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified		TOP	4194304 bit	4.5 V	CAN BE CONFG AS 256K X 16; TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm		70 ns	5	NO
TMS29VF040-20C5DDL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	3.3	YES	3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel		3-STATE	512KX8	512K	8	YES			DUAL			R-PDSO-G32		3.6 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			4194304 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm		200 ns	3	YES
TMS28F008LT10BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel			1MX8	1M					DUAL			R-PDSO-G40		3.6 V	1.2 mm			10 mm	Not Qualified		TOP	8388608 bit	3 V	TOP BOOT BLOCK				NOR TYPE		18.4 mm		100 ns	3
TMS28F008ASYB12BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	70 Cel			512KX16	512K					DUAL			R-PDSO-G40		5.5 V	1.2 mm			10 mm			BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK						18.4 mm		120 ns	5
TMS28F800ASYT10BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	70 Cel			1MX8	1M					DUAL			R-PDSO-G40		5.5 V	1.2 mm			10 mm			TOP	8388608 bit	4.5 V	TOP BOOT BLOCK						18.4 mm		100 ns	5
TMS29F002RB70CFML	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			262144 words	5			8	CHIP CARRIER					1.27 mm	70 Cel			256KX8	256K					QUAD			R-PQCC-J32		5.5 V	3.56 mm			11.43 mm	Not Qualified			2097152 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O				NOR TYPE		13.97 mm		70 ns	5
TMS28F400AMB60BDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3.3	NO	3.3/5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		3-STATE	256KX16	256K	1,2,1,3	YES			DUAL			R-PDSO-G48		3.6 V	1.2 mm	10000 Write/Erase Cycles		12 mm	Not Qualified		BOTTOM	4194304 bit	3 V	ALSO OPERATES AT 5V SUPPLY; BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm		110 ns	12	NO
TMS28F020-17C5DDL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.8		Flash Memories		.5 mm	70 Cel		3-STATE	256KX8	256K		YES			TRIPLE			R-PTSO-G32		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			2097152 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm		170 ns	12	NO
TMS28F400ASB60CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	3.3	NO	3.3/5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		3-STATE	512KX8	512K	1,2,1,3	YES			DUAL			R-PDSO-G44		3.6 V	2.63 mm	100000 Write/Erase Cycles		13.3 mm	Not Qualified		BOTTOM	4194304 bit	3 V	CAN BE CONFG AS 256K X 16; BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm		110 ns	5	NO
TMS28F800EB70BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE					1.27 mm	70 Cel			1MX8	1M					DUAL			R-PDSO-G44		3.6 V	2.63 mm			13.3 mm	Not Qualified		BOTTOM	8388608 bit	2.7 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK				NOR TYPE		28.2 mm		100 ns	3
TMS28F002AST80BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3.3	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		3-STATE	256KX8	256K	1,2,1,1	YES			DUAL			R-PDSO-G40		3.6 V	1.2 mm	10000 Write/Erase Cycles		10 mm	Not Qualified		TOP	2097152 bit	3 V	USER-SELECTABLE 5V OR 12 V VPP; TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm		150 ns	5	NO
TMS28F800ALYT10CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	70 Cel			1MX8	1M					DUAL			R-PDSO-G40		5.5 V	1.2 mm			10 mm			TOP	8388608 bit	4.5 V	TOP BOOT BLOCK						18.4 mm		100 ns	5
TMS28F010A-12C3NL4	Texas Instruments	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE					2.54 mm	70 Cel		3-STATE	128KX8	128K					DUAL			R-PDIP-T32		5.5 V	5.08 mm			15.24 mm	Not Qualified			1048576 bit	4.5 V	1000 PROGRAM/ERASE CYCLES				NOR TYPE		41.4 mm		120 ns	12
TMS28F512-17C2FML	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel			64KX8	64K		YES			QUAD			R-PQCC-J32		5.5 V	3.56 mm	100 Write/Erase Cycles		11.43 mm	Not Qualified			524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm		170 ns	12	NO
TMS28F512-15C4DUL4	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel	YES		64KX8	64K		YES			DUAL			R-PDSO-G32		5.5 V	1.2 mm	10000 Write/Erase Cycles		8 mm	Not Qualified			524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm		150 ns	12	NO
TMS28F210-17C3NL4	Texas Instruments	FLASH	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	IN-LINE	DIP40,.6		Flash Memories		2.54 mm	70 Cel		3-STATE	64KX16	64K		YES			DUAL			R-PDIP-T40		5.5 V	5.08 mm	1000 Write/Erase Cycles		15.24 mm	Not Qualified			1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	52.455 mm		170 ns	12	NO
TMS28F002AEB80BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		3-STATE	256KX8	256K	1,2,1,1	YES			DUAL			R-PDSO-G40		3.6 V	1.2 mm	10000 Write/Erase Cycles		10 mm	Not Qualified		BOTTOM	2097152 bit	2.7 V	USER-SELECTABLE 5V OR 12 V VPP; BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm		150 ns	5	NO
TMS28F512A-15C3FML	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel		3-STATE	64KX8	64K		YES			QUAD			R-PQCC-J32		5.5 V	3.56 mm	1000 Write/Erase Cycles		11.43 mm	Not Qualified			524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm		150 ns	12	NO
TMS29LF008B-100CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	1048576 words	3.3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel			1MX8	1M	1,2,1,15	YES		YES	DUAL			R-PDSO-G40		3.6 V	1.2 mm	100000 Write/Erase Cycles		10 mm	Not Qualified		BOTTOM	8388608 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm		100 ns	3	YES
TMS28F002AFB80CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		3-STATE	256KX8	256K	1,2,1,1	YES			DUAL			R-PDSO-G40		5.5 V	1.2 mm	100000 Write/Erase Cycles		10 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm		80 ns	5	NO
TMS29F002B-80BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSOP40,.79		Flash Memories		.5 mm	70 Cel			256KX8	256K	1,2,1,3	YES			DUAL			R-PDSO-G40		5.5 V	1.2 mm	10000 Write/Erase Cycles		10 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.4 mm		80 ns	5	YES
TMS28F400AET70CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	3	NO	3/5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		3-STATE	512KX8	512K	1,2,1,3	YES			DUAL			R-PDSO-G44		3.6 V	2.63 mm	100000 Write/Erase Cycles		13.3 mm	Not Qualified		TOP	4194304 bit	2.7 V	CAN BE CONFG AS 256K X 16; TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm		130 ns	5	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.