COMMERCIAL Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
AM29LV002BT-90EC	Spansion	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories	20	.5 mm	70 Cel		256KX8	256K	1,2,1,3	YES	TIN LEAD	YES	DUAL			R-PDSO-G40	3	3.6 V	1.2 mm			10 mm	Not Qualified			TOP	2097152 bit	2.7 V	MIN 1000K WRITE CYCLES; 20 YEAR DATA RETENTION; TOP BOOT BLOCK		e0		260	NOR TYPE	.000005 Amp	18.4 mm		90 ns	3	YES
AM29LV040B-90JD	Spansion	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	30 mA	524288 words	3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel		512KX8	512K	8	YES	MATTE TIN		QUAD			R-PQCC-J32	3	3.6 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified				4194304 bit	2.7 V			e3	40	260	NOR TYPE	.000005 Amp	13.97 mm		90 ns	3	YES
AM29F010B-90PC	Spansion	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	70 Cel		128KX8	128K	8	YES	TIN LEAD		DUAL			R-PDIP-T32	3	5.5 V	5.715 mm	1000000 Write/Erase Cycles		15.24 mm	Not Qualified				1048576 bit	4.5 V			e0		260	NOR TYPE	.000005 Amp	42.037 mm		90 ns	5	YES
AM29F040B-55JC	Spansion	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel		512KX8	512K	8	YES	TIN LEAD		QUAD			R-PQCC-J32	3	5.25 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified				4194304 bit	4.75 V			e0		260	NOR TYPE	.000005 Amp	13.97 mm		55 ns	5	YES
AM29F800BB-90ED	Spansion	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		512KX16	512K	1,2,1,15	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	5.5 V	1.2 mm	1000000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.001 Amp	18.4 mm		90 ns	5	YES
AM29LV010B-55JD	Spansion	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	3			8	CHIP CARRIER				20	1.27 mm	70 Cel		128KX8	128K			MATTE TIN		QUAD			R-PQCC-J32	3	3.6 V	3.556 mm			11.43 mm	Not Qualified				1048576 bit	2.7 V	MINIMUM 1000K WRITE CYCLES; 20 YEAR DATA RETENTION		e3	40	260			13.97 mm		55 ns	3
CAT28F512L-12	Catalyst Semiconductor	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	70 Cel		64KX8	64K		YES	MATTE TIN		DUAL			R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified				524288 bit	4.5 V			e3			NOR TYPE	.00001 Amp	42.03 mm		120 ns	12	NO
CAT28F512L12	Onsemi	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	70 Cel		64KX8	64K		YES	TIN		DUAL			R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified				524288 bit	4.5 V			e3			NOR TYPE	.00001 Amp	42.03 mm		120 ns	12	NO
MX29F040CQC-70G	Macronix	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	50 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel		512KX8	512K	8	YES	Tin (Sn)		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified				4194304 bit	4.5 V			e3	40	260	NOR TYPE	.000005 Amp	14.05 mm		70 ns	5	YES
SST27SF512-70-3C-NHE	Microchip Technology	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			65536 words	5			8	CHIP CARRIER					1.27 mm	70 Cel		64KX8	64K			MATTE TIN		QUAD			R-PQCC-J32		5.5 V	3.556 mm			11.43 mm	Not Qualified				524288 bit	4.5 V			e3			NOR TYPE		13.97 mm		70 ns	12
SST39VF040-70-4C-NHE	Microchip Technology	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	30 mA	524288 words	3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	100	1.27 mm	70 Cel	3-STATE	512KX8	512K	128	YES	MATTE TIN		QUAD	1		R-PQCC-J32	3	3.6 V	2.8448 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified				4194304 bit	2.7 V			e3		245	NOR TYPE	.000015 Amp	13.97 mm		70 ns	3	YES
AM29LV400BT90SC	Spansion	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		256KX16	256K	1,2,1,7	YES	TIN LEAD	YES	DUAL			R-PDSO-G44	3	3.6 V	2.8 mm	1000000 Write/Erase Cycles		13.3 mm	Not Qualified			TOP	4194304 bit	2.7 V	TOP BOOT BLOCK		e0		260	NOR TYPE	.000005 Amp	28.2 mm		90 ns	3	YES
MT29F16G08ABACAWP:C	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		512K	50 mA	2147483648 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		2GX8	2G	4K	YES		YES	DUAL			R-PDSO-G48							Not Qualified				17179869184 bit			4K				SLC NAND TYPE	.00005 Amp			20 ns		NO
MT29F32G08ABCABH1-10Z:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		1M	50 mA	4294967296 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel		4GX8	4G	4K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified				34359738368 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
WDS500G3X0C	Western Digital	FLASH MODULE	COMMERCIAL		SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD					536870912000 words				8	MICROELECTRONIC ASSEMBLY						70 Cel		500GX8	500G					SINGLE			R-XSMA-N			2.38 mm	300 Write/Erase Cycles		22 mm					4294967296000 bit							NAND TYPE		80 mm
AM29F040B-120JD	Spansion	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel		512KX8	512K	8	YES	MATTE TIN		QUAD			R-PQCC-J32	3	5.5 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified				4194304 bit	4.5 V			e3	40	260	NOR TYPE	.000005 Amp	13.97 mm		120 ns	5	YES
AM29F400BB-55ED	Spansion	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		256KX16	256K	1,2,1,7	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	5.25 V	1.2 mm	1000000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	4194304 bit	4.75 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm		55 ns	5	YES
MT29F4G08ABADAWP:D	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	35 mA	4294967296 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		4GX8	4G	4K	YES	MATTE TIN	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified				34359738368 bit	2.7 V		2K	e3	30	260	SLC NAND TYPE	.0001 Amp	18.4 mm		25 ns	3.3	NO
SST39SF020A-70-4C-NHE	Microchip Technology	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	35 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	100	1.27 mm	70 Cel	3-STATE	256KX8	256K	64	YES	Matte Tin (Sn)		QUAD	1		R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified				2097152 bit	4.5 V			e3	40	245	NOR TYPE	.0001 Amp	13.97 mm		70 ns	5	YES
SST39VF3201B-70-4C-EKE	Microchip Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K	45 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20		Flash Memories		.5 mm	70 Cel	3-STATE	2MX16	2M	1K	YES	Matte Tin (Sn) - annealed		DUAL	1		R-PDSO-G48	3	3.6 V	1.2 mm	10000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
SST39SF020A-70-4C-WHE	Microchip Technology	FLASH	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		Flash Memories	100	.5 mm	70 Cel	3-STATE	256KX8	256K	64	YES	Matte Tin (Sn)		DUAL	1		R-PDSO-G32	3	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified				2097152 bit	4.5 V			e3	40	260	NOR TYPE	.0001 Amp	12.4 mm		70 ns	5	YES
AM29F800BB-90EC	Spansion	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		512KX16	512K	1,2,1,15	YES	TIN LEAD	YES	DUAL			R-PDSO-G48	3	5.5 V	1.2 mm	1000000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.001 Amp	18.4 mm		90 ns	5	YES
CAT28F001G-12BT	Onsemi	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel		128KX8	128K	1,2,1	YES	TIN		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			BOTTOM	1048576 bit	4.5 V	BOTTOM BOOT BLOCK		e3		260	NOR TYPE	.000001 Amp	13.97 mm		120 ns	12	NO
EPC4QC100N	Intel	EEPROM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		90 mA	4194304 words	3.3		3.3	1	FLATPACK			Flash Memories			70 Cel	3-STATE	4MX1	4M			MATTE TIN		QUAD			R-PQFP-G100	3	3.6 V		100000 Write/Erase Cycles	66.7 MHz		Not Qualified				4194304 bit	3 V			e3			NOR TYPE	.00015 Amp
H27U518S2CTR-BC	Sk Hynix	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K	30 mA	67108864 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		64MX8	64M	4K	YES		YES	DUAL			R-PDSO-G48							Not Qualified				536870912 bit			512				SLC NAND TYPE	.00005 Amp			18 ns		NO
SST25VF080B-50-4C-QAF	Microchip Technology	FLASH	COMMERCIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		30 mA	8388608 words			3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	100	1.27 mm	70 Cel	3-STATE	8MX1	8M			NICKEL PALLADIUM GOLD		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified		SPI		8388608 bit	2.7 V			e4			NOR TYPE	.00003 Amp	6 mm
SST39LF800A-55-4C-EKE	Microchip Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K	30 mA	524288 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	100	.5 mm	70 Cel	3-STATE	512KX16	512K	256	YES	Matte Tin (Sn) - annealed		DUAL	1		R-PDSO-G48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified				8388608 bit	3 V			e3	40	260	NOR TYPE	.00002 Amp	18.4 mm	YES	55 ns	3.3	YES
SST39VF3201-70-4C-EKE	Microchip Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K	35 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	100	.5 mm	70 Cel	3-STATE	2MX16	2M	1K	YES	Matte Tin (Sn) - annealed		DUAL	1		R-PDSO-G48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
K9F1208U0C-PCB0	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	67108864 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		64MX8	64M	4K	YES	TIN BISMUTH	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified				536870912 bit	2.7 V		512	e6		260		.00005 Amp	18.4 mm		30 ns	3.3	NO
K9F5608U0D-PCB0	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K	25 mA	33554432 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		32MX8	32M	2K	YES	TIN BISMUTH	YES	DUAL			R-PDSO-G48	3						Not Qualified				268435456 bit			512	e6		260		.00005 Amp			30 ns		NO
MT29F2G08ABAEAH4:E	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	268435456 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		256MX8	256M	2K	YES		YES	BOTTOM			R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified				2147483648 bit	2.7 V		2K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.0001 Amp	11 mm		25 ns	2.7	NO
SQF-SMSM2-64G-SBC	Advantech	FLASH MODULE	COMMERCIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL				68719476736 words				8	MICROELECTRONIC ASSEMBLY						70 Cel		64GX8	64G					SINGLE			R-XSMA-N52			4.2 mm			30 mm					549755813888 bit							MLC NAND TYPE		50.8 mm
A25L032M-F	Amic Technology	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			26 mA	4194304 words			3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	70 Cel		4MX8	4M					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				100000 Write/Erase Cycles	100 MHz		Not Qualified		SPI		33554432 bit					NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000015 Amp				2.7
AT29LV020-20JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	256	15 mA	262144 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel	3-STATE	256KX8	256K	1K	NO	TIN LEAD		QUAD			R-PQCC-J32	2	3.6 V	3.556 mm			11.43 mm	Not Qualified	20 ms		BOTTOM/TOP	2097152 bit	3 V			e0		225	NOR TYPE	.00004 Amp	13.97 mm		200 ns	3	YES
EPC4QC100	Intel	EEPROM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		90 mA	4194304 words	3.3		3.3	1	FLATPACK	QFP100,.7X.9		Flash Memories		.65 mm	70 Cel	3-STATE	4MX1	4M			TIN LEAD		QUAD			R-PQFP-G100	3	3.6 V	3.4 mm	100000 Write/Erase Cycles	66.7 MHz	14 mm	Not Qualified				4194304 bit	3 V			e0				.00015 Amp	20 mm
CAT28F512H-12	Catalyst Semiconductor	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel		64KX8	64K		YES	MATTE TIN		DUAL			R-PDSO-G32	2A	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified				524288 bit	4.5 V			e3			NOR TYPE	.00001 Amp	18.4 mm		120 ns	12	NO
CAT28F512H12	Onsemi	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel		64KX8	64K		YES	TIN		DUAL			R-PDSO-G32	2A	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified				524288 bit	4.5 V			e3			NOR TYPE	.00001 Amp	18.4 mm		120 ns	12	NO
MT29F4G08ABBDAH4:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	536870912 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		512MX8	512M	4K	YES		YES	BOTTOM			R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified				4294967296 bit	1.7 V		2K		30	260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns		NO
A29040B-70F	Amic Technology	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	70 Cel		512KX8	512K	8	YES			DUAL			R-PDIP-T32		5.5 V	5.334 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified				4194304 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	41.91 mm		70 ns	5	YES
MT29F16G08ABABAWP:B	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	512K	50 mA	2147483648 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		2GX8	2G	4K	YES	MATTE TIN	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified				17179869184 bit	2.7 V		4K	e3			SLC NAND TYPE	.00005 Amp	18.4 mm		20 ns	2.7	NO
MT29F32G08CBABAWP:B	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		1M	50 mA	4294967296 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		4GX8	4G	4K	YES		YES	DUAL			R-PDSO-G48							Not Qualified				34359738368 bit			4K				MLC NAND TYPE	.00005 Amp			20 ns		NO
SST39VF400A-70-4C-EKE	Microchip Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K	30 mA	262144 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	100	.5 mm	70 Cel	3-STATE	256KX16	256K	128	YES	Matte Tin (Sn) - annealed		DUAL	1		R-PDSO-G48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified				4194304 bit	2.7 V			e3	40	260	NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
AM29F040B-120JC	Spansion	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel		512KX8	512K	8	YES	TIN LEAD		QUAD			R-PQCC-J32	3	5.5 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified				4194304 bit	4.5 V			e0		260	NOR TYPE	.000005 Amp	13.97 mm		120 ns	5	YES
AM29LV017B-70REC	Spansion	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	30 mA	2097152 words	3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		2MX8	2M	32	YES		YES	DUAL			R-PDSO-G40	1	3.6 V	1.2 mm			10 mm	Not Qualified				16777216 bit	2.7 V						NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
AM29LV160DB-70EC	Spansion	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		1MX16	1M	1,2,1,31	YES	TIN LEAD	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
AM29LV160DB70EC	Advanced Micro Devices	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		1MX16	1M	1,2,1,31	YES	Tin/Lead (Sn/Pb)	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V	MIN 1000K WRITE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
AT29C010A-12TC	Atmel	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,112K,8K	50 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel	3-STATE	128KX8	128K	1,1,1	NO	TIN LEAD		DUAL			R-PDSO-G32	3	5.5 V	1.2 mm			8 mm	Not Qualified	10 ms		BOTTOM/TOP	1048576 bit	4.5 V			e0		240	NOR TYPE	.00003 Amp	18.4 mm		120 ns	5	YES
GLS29EE010-70-4C-NHE	Greenliant Systems	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	70 Cel		128KX8	128K		NO			QUAD			R-PQCC-J32	3	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms			1048576 bit	4.5 V		128					.00005 Amp	13.97 mm		70 ns	5	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.