COMMERCIAL Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
AT29C040A-12TC	Atmel	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	256	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	2K	NO	TIN LEAD		DUAL		R-PDSO-G32	3	5.5 V	1.2 mm			8 mm	Not Qualified	10 ms		BOTTOM/TOP	4194304 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	256	e0		240	NOR TYPE	.0001 Amp	18.4 mm		120 ns	5	YES
AT29C1024-70JC	Atmel	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		60 mA	65536 words	5	YES	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories		1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		NO	TIN LEAD		QUAD		S-PQCC-J44	2	5.5 V	4.57 mm	10000 Write/Erase Cycles		16.5862 mm	Not Qualified	10 ms			1048576 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	128	e0		225	NOR TYPE	.0002 Amp	16.5862 mm		70 ns	5	YES
AT29LV010A-15JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	128	15 mA	131072 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1K	NO	TIN LEAD		QUAD		R-PQCC-J32	2	3.6 V	3.56 mm			11.43 mm	Not Qualified	20 ms			1048576 bit	3 V			e0		225	NOR TYPE	.00004 Amp	13.97 mm		150 ns	3	YES
AT45DB321-TC	Microchip Technology	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		35 mA	33554432 words	3		3/3.3	1	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel		32MX1	32M	0 Cel			TIN LEAD		DUAL	HARDWARE	R-PDSO-G32	3	3.6 V	1.2 mm		13 MHz	8 mm	Not Qualified		SPI		33554432 bit	2.7 V	HARDWARE DATA PROTECTION; SPI SERIAL INTERFACE		e0		240	NOR TYPE	.00001 Amp	18.4 mm			2.7
AT49F1614-90TC	Atmel	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,32K,64K	80 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		1MX16	1M	0 Cel	8,2,30	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	4.5 V	CONFIGURABLE AS 2M X 8		e0			NOR TYPE	.003 Amp	18.4 mm		90 ns	5	YES
AT49LV002-90TC	Atmel	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	50 mA	262144 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,1	YES	TIN LEAD		DUAL		R-PDSO-G32	3	3.6 V	1.2 mm			8 mm	Not Qualified			BOTTOM	2097152 bit	3 V			e0		240	NOR TYPE	.00005 Amp	18.4 mm		90 ns	3	YES
DD28F032SA-70	Intel	FLASH	COMMERCIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	64 mA	4194304 words	5	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	16	Flash Memories		.5 mm	70 Cel		4MX8	4M	0 Cel	64	YES	Tin/Lead (Sn/Pb)	YES	DUAL		R-PDSO-G56		5.5 V	1.2 mm			14 mm	Not Qualified				33554432 bit	3 V		128/256	e0			NOR TYPE	.00001 Amp	18.4 mm		70 ns	3	NO
E28F800B5B70	Intel	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	70 mA	1048576 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		1MX8	1M	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G48		5.5 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	CONFG AS 512K X 16; USER SELECTABLE AS 5V OR 12V VPP; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000008 Amp	18.4 mm		80 ns	5	NO
K9F2808U0M-YCB0	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	16777216 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		16MX8	16M	0 Cel	1K	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified				134217728 bit	2.7 V		512	e0			SLC NAND TYPE	.00005 Amp	18.4 mm		35 ns	2.7	NO
MT28F004B5VG-8B	Micron Technology	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		512KX8	512K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G40		5.5 V	1.2 mm			10 mm	Not Qualified			BOTTOM	4194304 bit	4.5 V	100000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F008B3VG-10T	Micron Technology	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	30 mA	1048576 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		1MX8	1M	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G40		3.6 V	1.2 mm			10 mm	Not Qualified			TOP	8388608 bit	3 V	100,000 ERASE CYCLES, USER SELECTABLE VPP=3.3V/5V/12V; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		100 ns	3	NO
MT28F800B3SG-9T	Micron Technology	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	25 mA	524288 words	3.3	NO	3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G44		3.6 V	2.8 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified			TOP	8388608 bit	3 V	100,000 ERASE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	28.02 mm		90 ns	3	NO
MT29F1G08ABAEAWP:E	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		128MX8	128M	0 Cel			Matte Tin (Sn)		DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm					1073741824 bit	2.7 V			e3	NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		18.4 mm			2.7
MT29F256G08AUCABJ3-10Z:A	Micron Technology	FLASH	COMMERCIAL	132			PLASTIC/EPOXY	YES		CMOS		PARALLEL		1M	50 mA			NO	1.8,3/3.3			BGA132,11X17,40		Flash Memories			70 Cel				0 Cel	32K	YES		YES										Not Qualified				274877906944 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F32G08CBACAWP-Z:C	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4294967296 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		4GX8	4G	0 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm					34359738368 bit	2.7 V				30	260	MLC NAND TYPE		18.4 mm			3.3
MT29F8G08ABACAH4:C	Micron Technology	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	256K	35 mA	1073741824 words	3.3	NO	3/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		1GX8	1G	0 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified				8589934592 bit	2.7 V		4K				SLC NAND TYPE	.0001 Amp	11 mm				NO
MZ-V7S500BW	Samsung	FLASH MODULE	COMMERCIAL		SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD					500000000000 words				8	MICROELECTRONIC ASSEMBLY						70 Cel		500GX8	500G	0 Cel					SINGLE		R-XSMA-N											4000000000000 bit							MLC NAND TYPE
N28F001BX-B120	Intel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1,2,1	YES	TIN LEAD		QUAD		R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			BOTTOM	1048576 bit	4.5 V	DEEP POWER-DOWN; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000001 Amp	13.97 mm		120 ns	12	NO
N28F256A-120	Intel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		YES	TIN LEAD		QUAD		R-PQCC-J32		5.5 V	3.55 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified				262144 bit	4.5 V	100000 ERASE/PROGRAM CYCLES		e0			NOR TYPE	.0001 Amp	13.97 mm		120 ns	12	NO
PA28F400B5B60	Intel	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	70 mA	524288 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		512KX8	512K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G44		5.5 V	2.95 mm	100000 Write/Erase Cycles		13.3 mm	Not Qualified			BOTTOM	4194304 bit	4.5 V	CONFG AS 256K X 16; USER SELECTABLE AS 5V OR 12V VPP; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000008 Amp	28.2 mm		70 ns	5	NO
PA28F400B5T80	Intel	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	70 mA	524288 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		512KX8	512K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G44		5.5 V	2.95 mm	100000 Write/Erase Cycles		13.3 mm	Not Qualified			TOP	4194304 bit	4.5 V	CONFG AS 256K X 16; USER SELECTABLE AS 5V OR 12V VPP; TOP BOOT BLOCK		e0			NOR TYPE	.000008 Amp	28.2 mm		80 ns	5	NO
SSDSC2BX480G4	Intel	FLASH	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		480GX8	480G	0 Cel					SINGLE		R-XSMA-N22		5.25 V	7 mm			69.85 mm					4123168604160 bit	4.75 V	ALSO OPERATES @ 12V NOM, AVAILABLE 2.5INCH @ 100GB, 1.8INCH @ 800GB, LG-MAX			NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		100.45 mm			5
AM29LV010B-90JC	Spansion	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K	30 mA	131072 words	3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	20	1.27 mm	70 Cel		128KX8	128K	0 Cel	8	YES	TIN LEAD		QUAD		R-PQCC-J32	3	3.6 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified				1048576 bit	2.7 V	MINIMUM 1000K WRITE CYCLES; 20 YEAR DATA RETENTION		e0		260	NOR TYPE	.000005 Amp	13.97 mm		90 ns	3	YES
AT29C010-12PC	Atmel	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	128	50 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1K	NO	TIN LEAD		DUAL		R-PDIP-T32		5.5 V	5.59 mm			15.24 mm	Not Qualified				1048576 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION		e0			NOR TYPE	.0001 Amp	42.05 mm		120 ns	5	YES
AT29C010A-12PC	Atmel	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,112K,8K	50 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1,1,1	NO	TIN LEAD		DUAL		R-PDIP-T32		5.5 V	4.826 mm			15.24 mm	Not Qualified	10 ms		BOTTOM/TOP	1048576 bit	4.5 V			e0			NOR TYPE	.0001 Amp	42.037 mm		120 ns	5	YES
AT29C010A-70JCT/R	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER					1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel			TIN LEAD		QUAD		R-PQCC-J32	2	5.25 V	3.55 mm			11.43 mm	Not Qualified				1048576 bit	4.75 V			e0			NOR TYPE		13.97 mm		70 ns	5
AT29C040A-10TC	Atmel	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	256	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel		512KX8	512K	0 Cel	2K	NO	TIN LEAD		DUAL		R-PDSO-G32	3	5.5 V	1.2 mm			8 mm	Not Qualified	10 ms		BOTTOM/TOP	4194304 bit	4.5 V		256	e0		240	NOR TYPE	.0001 Amp	18.4 mm		100 ns	5	YES
AT29C256-25JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	TIN LEAD		QUAD		R-PQCC-J32	2	5.5 V	3.55 mm			11.43 mm	Not Qualified				262144 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	64	e0		225	NOR TYPE	.0003 Amp	13.97 mm		250 ns	5	YES
AT29C256-70JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	TIN LEAD		QUAD		R-PQCC-J32	2	5.25 V	3.556 mm			11.43 mm	Not Qualified	10 ms			262144 bit	4.75 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	64	e0		225	NOR TYPE	.0003 Amp	13.97 mm		70 ns	5	YES
AT29C257-70JCT/R	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			32768 words	5			8	CHIP CARRIER					1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel			TIN LEAD		QUAD		R-PQCC-J32	2	5.25 V	3.55 mm			11.43 mm	Not Qualified				262144 bit	4.75 V			e0			NOR TYPE		13.97 mm		70 ns	5
AT29C512-70JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	128	50 mA	65536 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	512	NO	TIN LEAD		QUAD		R-PQCC-J32	2	5.25 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms			524288 bit	4.75 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	128	e0		225	NOR TYPE	.0001 Amp	13.97 mm		70 ns	5	YES
AT45DB041B-SC-2.5	Atmel	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		10 mA	4194304 words	2.7		2.7/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories		1.27 mm	70 Cel		4MX1	4M	0 Cel			TIN LEAD		DUAL	HARDWARE	R-PDSO-G8	1	3.6 V	2.16 mm		15 MHz	5.24 mm	Not Qualified		SPI		4194304 bit	2.5 V	ORGANIZED AS 2048 PAGES OF 264 BYTES EACH		e0		240	NOR TYPE	.00001 Amp	5.29 mm			2.7
AT45DB321C-TC	Atmel	FLASH	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		50 mA	33554432 words	3		3/3.3	1	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		Flash Memories		.55 mm	70 Cel		32MX1	32M	0 Cel			TIN LEAD		DUAL	HARDWARE	R-PDSO-G28	3	3.6 V	1.2 mm		40 MHz	8 mm	Not Qualified		SPI		33554432 bit	2.7 V	ORGANISED AS 8192 PAGES OF 528 BYTES EACH		e0			NOR TYPE	.000015 Amp	11.8 mm			2.7
AT49BV020-12TC	Atmel	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,248K	50 mA	262144 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel		256KX8	256K	0 Cel	1,1	YES	TIN LEAD		DUAL		R-PDSO-G32	3	3.6 V	1.2 mm			8 mm	Not Qualified			BOTTOM	2097152 bit	2.7 V			e0		240	NOR TYPE	.00005 Amp	18.4 mm		120 ns	2.7	YES
AT49F002NT-90PC	Atmel	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	90 mA	262144 words	5	YES	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,1	YES	TIN LEAD		DUAL		R-PDIP-T32	1	5.5 V	5.59 mm			15.24 mm	Not Qualified			TOP	2097152 bit	4.5 V	HARDWARE DATA PROTECTION		e0			NOR TYPE	.0001 Amp	42.05 mm		90 ns	5	YES
AT49LV001-90JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	50 mA	131072 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel		128KX8	128K	0 Cel	1,2,1,1	YES	TIN LEAD		QUAD		R-PQCC-J32	2	3.6 V	3.556 mm			11.43 mm	Not Qualified			BOTTOM	1048576 bit	3 V			e0		225	NOR TYPE	.00005 Amp	13.97 mm		90 ns	3	YES
AT49LV1614-90TC	Atmel	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,32K,64K	50 mA	1048576 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		1MX16	1M	0 Cel	8,2,30	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	3 V			e0			NOR TYPE	.00001 Amp	18.4 mm		90 ns	3	YES
E28F002BC-T80	Intel	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	1,2,1,1	YES	TIN LEAD		DUAL		R-PDSO-G40		5.5 V	1.2 mm	100000 Write/Erase Cycles		10 mm	Not Qualified			TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.000008 Amp	18.4 mm		80 ns	12	NO
E28F002BX-T80	Intel	FLASH	COMMERCIAL	40	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	NO LEAD	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	1,2,1,1	YES			DUAL		R-PDSO-N40		5.25 V	1.2 mm	100000 Write/Erase Cycles		10 mm	Not Qualified			TOP	2097152 bit	4.75 V	BOTTOM BOOT BLOCK					NOR TYPE	.0000012 Amp	18.4 mm		80 ns	12	NO
K9F1G08U0D-SCB0	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	35 mA	134217728 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		128MX8	128M	0 Cel	1K	YES		YES	DUAL		R-PDSO-G48							Not Qualified				1073741824 bit			2K				SLC NAND TYPE	.00008 Amp			20 ns	2.7	NO
MBM29F033C-70PTN	Spansion	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	45 mA	4194304 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		4MX8	4M	-20 Cel	64	YES	TIN LEAD	YES	DUAL		R-PDSO-G40		5.25 V	1.2 mm			10 mm	Not Qualified				33554432 bit	4.75 V			e0			NOR TYPE	.000005 Amp	18.4 mm		70 ns	5	YES
MBM29LV800B-12PFTN	Fujitsu	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	35 mA	1048576 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		1MX8	1M	0 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	8388608 bit	2.7 V	CAN ALSO BE CONFIGURABLE AS 512K X 16 ;100K PROGRAM/ERASE CYCLE MIN		e0			NOR TYPE	.000005 Amp	18.4 mm		120 ns	3	YES
MBM29PL160BD-75PFTN	Spansion	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,224K,256K	70 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		1MX16	1M	-20 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V	ALSO CONFIGURABLE AS 2M X 8	8/16	e0			NOR TYPE	.000005 Amp	18.4 mm	YES	75 ns	3	YES
MT28F016S5VG-9	Micron Technology	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	50 mA	2097152 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		2MX8	2M	0 Cel	32	YES	TIN LEAD	YES	DUAL		R-PDSO-G40		5.5 V	1.2 mm			10 mm	Not Qualified				16777216 bit	4.5 V	DEEP POWER DOWN; USER CONFIGURABLE 5V OR 12V VPP		e0			NOR TYPE	.00001 Amp	18.4 mm		90 ns	5	NO
MT29F4G16ABADAH4:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	35 mA	268435456 words	3.3	NO	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		256MX16	256M	0 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified				4294967296 bit	2.7 V		1K		30	260	SLC NAND TYPE	.0001 Amp	11 mm		25 ns		NO
MZ-M6E250BW	Samsung	FLASH MODULE	COMMERCIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD		ASYNCHRONOUS			268435456000 words				8	MICROELECTRONIC ASSEMBLY						70 Cel		250GX8	250G	0 Cel					UNSPECIFIED		R-XXMA-N											2147483648000 bit							MLC NAND TYPE
MZ-V7S1T0BW	Samsung	FLASH MODULE	COMMERCIAL		SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD					1000000000000 words				8	MICROELECTRONIC ASSEMBLY						70 Cel		1TX8	1T	0 Cel					SINGLE		R-XSMA-N											8000000000000 bit							MLC NAND TYPE
MZ-V7S250BW	Samsung	FLASH MODULE	COMMERCIAL		SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD					250000000000 words				8	MICROELECTRONIC ASSEMBLY						70 Cel		250GX8	250G	0 Cel					SINGLE		R-XSMA-N											2000000000000 bit							MLC NAND TYPE

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.