INDUSTRIAL Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MX25R6435FZAIH0	Macronix	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	85 Cel		16MX4	16M	-40 Cel					DUAL			S-PDSO-N8		3.6 V	.6 mm		80 MHz	4 mm					67108864 bit	1.65 V	ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT		NOT SPECIFIED	NOT SPECIFIED			4 mm			1.8
S25FL256SAGMFI001	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3		3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel		64MX4	64M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1	e3		260	NOR TYPE	.0001 Amp	10.3 mm			3
SDINBDG4-8G-XI2	Western Digital	FLASH CARD	INDUSTRIAL		VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					8589934592 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH						85 Cel		8GX8	8G	-40 Cel					BOTTOM					3.6 V	.8 mm	3000 Write/Erase Cycles		11.5 mm					68719476736 bit	2.7 V					MLC NAND TYPE		13 mm
AT45DB081E-SHN-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16 mA	1048576 words	3		1.8/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.24 mm	Not Qualified		SPI		8388608 bit	2.3 V	IT ALSO OPERATES WITH 1.7V MIN WITH 85 MHZ FREQUENCY;256K-BIT EXTRA FLASH AVAILABLE	e4			NOR TYPE	.00004 Amp	5.29 mm			3
S25FL128SAGBHI200	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	33554432 words	3		3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel		32MX4	32M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI		134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE	.0001 Amp	8 mm			3
MT25QL128ABA8ESF-0SITTR	Micron Technology	FLASH	INDUSTRIAL	16	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		35 mA		3			1	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel		16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.29 mm			SPI		134217728 bit	2.7 V					NOR TYPE	.00005 Amp	5.29 mm			3
W25Q32JVZPIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			4194304 words	3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	85 Cel		4MX8	4M	-40 Cel			PURE TIN		DUAL			R-PDSO-N8		3.6 V	.8 mm		133 MHz	5 mm					33554432 bit	3 V	2.7V NOMINAL AVAILABLE WITH 104MHZ			260			6 mm			3
AT45DB641E-SHN2B-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			67108864 words	2.3			1	SMALL OUTLINE					1.27 mm	85 Cel		64MX1	64M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8	1	3.6 V	2.16 mm		85 MHz	5.24 mm					67108864 bit	1.7 V		e4			NOR TYPE		5.29 mm			1.8
AT25SF081-SSHD-T	Dialog Semiconductor	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		16 mA	8388608 words	3			1	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI		8388608 bit	2.5 V	ALSO OPERATES WITH 2.3VMIN SUPPLY		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000025 Amp	4.925 mm			3
MT25QL128ABA1EW7-0SITTR	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			134217728 words	3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		128MX1	128M	-40 Cel					DUAL			R-PDSO-N8		3.6 V	.8 mm		133 MHz	5 mm					134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			6 mm			3
S25FL256SAGMFI000	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3		3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel		64MX4	64M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	500 ms	SPI		268435456 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1	e3			NOR TYPE	.0001 Amp	10.3 mm			3
EPCS1SI8N	Intel	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	131072 words	3.3		3.3	1	SMALL OUTLINE			Flash Memories			85 Cel	3-STATE	128KX8	128K	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL			R-PDSO-G8	3	3.6 V		100000 Write/Erase Cycles	40 MHz		Not Qualified				1048576 bit	2.7 V		e4	30	260		.00005 Amp
S25FL064LABMFI010	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE		2			1.27 mm	85 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL			S-PDSO-G8	3	3.6 V	2.16 mm		108 MHz	5.28 mm					67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH	e3		260			5.28 mm			3
S25FS128SDSNFI100	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		100 mA	16777216 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			2	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI		134217728 bit	1.7 V		e3			NOR TYPE	.0003 Amp	6 mm			1.8
MX25R6435FZAIL0	Macronix	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	85 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL			S-PDSO-N8	3	3.6 V	.6 mm		33 MHz	4 mm					67108864 bit	1.65 V	ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT	e3					4 mm			3
SST26VF032B-104V/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		30 mA	4194304 words	3			8	SMALL OUTLINE	SOP8,.3			100	1.27 mm	105 Cel		4MX8	4M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm			SPI		33554432 bit	2.7 V		e3	40	260	NOR TYPE	.000045 Amp	5.26 mm			3
S25FL256SAGMFI003	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3		3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel		64MX4	64M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1	e3			NOR TYPE	.0001 Amp	10.3 mm			3
W25Q128JVEIM	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	4		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00006 Amp	8 mm			3.3
W25Q64JVZPIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	8388608 words	3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	1		20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI		67108864 bit	3 V	IT ALSO OPERATES AT 2.7V @ 104MHZ		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	6 mm			3.3
IS25LP128-JBLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		14 mA	134217728 words	3			1	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	105 Cel	3-STATE	128MX1	128M	-40 Cel			TIN		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			4-WIRE		134217728 bit	2.3 V		e3				.000065 Amp	5.28 mm			2.7
W25Q16JLSNIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			2097152 words	3			8	SMALL OUTLINE		1			1.27 mm	85 Cel		2MX8	2M	-40 Cel					DUAL			R-PDSO-G8		3.6 V	1.75 mm		104 MHz	3.9 mm					16777216 bit	2.7 V	IT ALSO OPERATES AT FREQUENCY 50 MHZ AT SUPPLY VOLTAGE 2.3 TO 2.7 V		NOT SPECIFIED	NOT SPECIFIED			4.9 mm			2.7
AT45DB161E-SHD-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		26 mA	16777216 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		16MX1	16M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	85 MHz	5.24 mm	Not Qualified		SPI		16777216 bit	2.5 V		e4			NOR TYPE	.00001 Amp	5.29 mm			2.7
SST26VF032BT-104I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		30 mA	4194304 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	100	1.27 mm	85 Cel		4MX8	4M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified		SPI		33554432 bit	2.7 V		e3			NOR TYPE	.000045 Amp	6 mm			3
S29JL032J70TFI320	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	8K,64K	45 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
W25Q16JVZPIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			2097152 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		2MX8	2M	-40 Cel			TIN		DUAL			R-PDSO-N8		3.6 V	.8 mm		133 MHz	5 mm					16777216 bit	2.7 V		e3					6 mm			3
M25P40-VMN6TPBA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL			15 mA	524288 words			2.5/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				100000 Write/Erase Cycles	50 MHz		Not Qualified		SPI		4194304 bit				30	260	NOR TYPE	.00001 Amp				3
M25P16-VMN6TPBA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified		SPI		16777216 bit	2.7 V			30	260	NOR TYPE	.00001 Amp	4.9 mm			2.7
M25P40-VMN6TPBATR	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			524288 words	2.7			8	SMALL OUTLINE					1.27 mm	85 Cel		512KX8	512K	-40 Cel					DUAL			R-PDSO-G8		3.6 V	1.75 mm		50 MHz	3.9 mm					4194304 bit	2.3 V			30	260	NOR TYPE		4.9 mm			3
S25FL127SABMFI101	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3	4	Flash Memories	20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.28 mm	Not Qualified		SPI		134217728 bit	2.7 V		e3		260	NOR TYPE	.0001 Amp	5.28 mm			3
SST26VF032B-104V/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		30 mA	4194304 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			100	1.27 mm	105 Cel		4MX8	4M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm			SPI		33554432 bit	2.7 V		e3			NOR TYPE	.000045 Amp	6 mm			3
W25Q16JVUXIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			2097152 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel		2MX8	2M	-40 Cel					DUAL			R-PDSO-N8		3.6 V	.6 mm		133 MHz	2 mm					16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			3 mm			3
MX25L3233FM2I-08G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		17 mA	4194304 words	3			8	SMALL OUTLINE	SOP8,.3	4		20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel			TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.23 mm			SPI		33554432 bit	2.65 V	ALSO ORGANISED AS 32MX1	e3			NOR TYPE	.00005 Amp	5.28 mm			3
W25Q80DVSNIGT	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE		1			1.27 mm	85 Cel		1MX8	1M	-40 Cel			TIN		DUAL			R-PDSO-G8		3.6 V	1.75 mm		104 MHz	3.9 mm					8388608 bit	2.7 V		e3					4.85 mm			3
MX25R6435FM2IL0	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	SMALL OUTLINE		2			1.27 mm	85 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G8	3	3.6 V	2.16 mm		33 MHz	5.23 mm					67108864 bit	1.65 V	ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT	e3					5.28 mm			3
S29GL064S70TFI040	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		8MX8	8M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			14 mm					67108864 bit	2.7 V		e3					18.4 mm		70 ns	3
AT45DB641E-SHN-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			67108864 words	2.3			1	SMALL OUTLINE					1.27 mm	85 Cel		64MX1	64M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8	1	3.6 V	2.16 mm		85 MHz	5.24 mm					67108864 bit	1.7 V		e4					5.29 mm			1.8
AT45DB321D-SU-SL954	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		17 mA	33554432 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		32MX1	32M	-40 Cel			Matte Tin (Sn)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.24 mm	Not Qualified		SPI		33554432 bit	2.7 V	ORGANIZED AS 8192 PAGES OF 512 BYTES EACH	e3			NOR TYPE	.00001 Amp	5.29 mm			2.7
W25Q128JWSIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	16777216 words	1.8			8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		1.95 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	5.28 mm			1.8
AT45DB321E-SHFHA-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel		32MX1	32M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8	1	3.6 V	2.16 mm		85 MHz	5.24 mm					33554432 bit	2.3 V		e4					5.29 mm			3
W25Q80DVUXIETR	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	1048576 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	1		20	.5 mm	85 Cel		1MX8	1M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.6 mm	100000 Write/Erase Cycles	104 MHz	2 mm			SPI		8388608 bit	2.7 V					NOR TYPE	.00005 Amp	3 mm			3
MX25V1635FM1I	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			4194304 words	3			4	SMALL OUTLINE		2			1.27 mm	85 Cel		4MX4	4M	-40 Cel					DUAL			R-PDSO-G8		3.6 V	1.75 mm		80 MHz	3.9 mm					16777216 bit	2.3 V	ALSO IT CAN BE CONFIGURED AS 16M X 1 BIT		NOT SPECIFIED	NOT SPECIFIED			4.9 mm			3
SST25VF080B-50-4I-S2AF	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	8388608 words			3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.275 mm	Not Qualified		SPI		8388608 bit	2.7 V		e4		260	NOR TYPE	.00003 Amp	5.275 mm
M25P128-VMF6PB	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	16777216 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	10000 Write/Erase Cycles	50 MHz	7.5 mm	Not Qualified		SPI		134217728 bit	2.7 V			30	260	NOR TYPE	.0001 Amp	10.3 mm			2.7
MT25QL01GBBB8ESF-0SIT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			1073741824 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel		1GX1	1G	-40 Cel					DUAL			R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.5 mm					1073741824 bit	2.7 V			30	260			10.3 mm			3
S25FL128SAGMFI003	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	33554432 words	3		3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel		32MX4	32M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	500 ms	SPI	BOTTOM	134217728 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1	e3	30	260	NOR TYPE	.0001 Amp	10.3 mm			3
W25Q64JVSSIM	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	8388608 words	3.3			8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI		67108864 bit	3 V	IT ALSO OPERATES AT 2.7V @ 104MHZ		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	5.28 mm			3.3
AT45DB041E-SHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16 mA	4194304 words	3		1.8/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	85 MHz	5.24 mm	Not Qualified		SPI		4194304 bit	2.3 V		e4		260	NOR TYPE	.00004 Amp	5.29 mm			3
S25FL128SAGMFI000	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	33554432 words	3		3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel		32MX4	32M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	500 ms	SPI	BOTTOM	134217728 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1	e3	30	260	NOR TYPE	.0001 Amp	10.3 mm			3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.