Infineon Technologies Flash Memory 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29CL016J1JQFI120	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	FLATPACK					.8 mm	85 Cel		512KX32	512K	-40 Cel			MATTE TIN		QUAD		R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified		TOP	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e3			NOR TYPE		20 mm		54 ns	3.3
S70WS512N00BAWA30	Infineon Technologies
S29WS064J1ABAW010	Infineon Technologies	FLASH	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K		4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA80,8X10,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM		R-PBGA-B80							Not Qualified		BOTTOM/TOP	67108864 bit							NOR TYPE	.00005 Amp		YES	45 ns		YES
S29CL016J0JQAI130	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	FLATPACK					.8 mm	85 Cel		512KX32	512K	-40 Cel			TIN LEAD		QUAD		R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified		TOP	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0			NOR TYPE		20 mm		54 ns	3.3
S28HL01GTFPBHV030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	134217728 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	3-STATE	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	300000 Write/Erase Cycles	166 MHz	8 mm		SPI		1073741824 bit	2.7 V						NOR TYPE	.00032 Amp	8 mm			3
S28HL01GTGABHV010	Infineon Technologies	FLASH
S29CD016J0MQFM112	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6		FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES	MATTE TIN	YES	QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified		BOTTOM	16777216 bit	2.5 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S70WS512N00BAWA33	Infineon Technologies
S29WS256P0LBAW003	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		16MX16	16M	-25 Cel	8,254	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B84	3	1.95 V	1 mm			8 mm	Not Qualified		BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1			NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
S29CD016J0MFAI103	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified		TOP	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29CL032J1JFFM013	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified		BOTTOM	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	3.3	YES
S29CD016J1JFAM132	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified		BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29WS256P0PBFW003	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		16MX16	16M	-25 Cel	8,254	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B84	3	1.95 V	1 mm			8 mm	Not Qualified		BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1	40	260	NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
S29CD016J0JQFM102	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6		FLATPACK	BGA80,8X10,40		Flash Memories		.8 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES	MATTE TIN	YES	QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified		TOP	16777216 bit	2.5 V	TOP BOOT BLOCK		e3			NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29CD016J0JQFM023	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES	MATTE TIN	YES	QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified		TOP	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e3	40	260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29GL064N90FFIR42	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	60 mA	4194304 words	3.3	YES	3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified		BOTTOM	67108864 bit	3 V		8/16	e1	30	260	NOR TYPE	.000005 Amp	13 mm	YES	90 ns	3	YES
S29CD032J0JFFI030	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified		BOTTOM	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29CL016J0MQAM013	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	QUAD		R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified		BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	3.3	YES
S28HL512TGABHM013	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1		25	1 mm	125 Cel	3-STATE	64MX8	64M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	1280000 Write/Erase Cycles	200 MHz	6 mm		SPI		536870912 bit	2.7 V						NOR TYPE		8 mm			3
S29CL016J0PQFM010	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES	MATTE TIN	YES	QUAD		R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified		BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	3.3	YES
S29CL016J0PQFM100	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	FLATPACK					.8 mm	125 Cel		512KX32	512K	-40 Cel			MATTE TIN		QUAD		R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified		TOP	16777216 bit	3 V	TOP BOOT BLOCK		e3			NOR TYPE		20 mm		54 ns	3.3
S29CD032J0PFAM022	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified		TOP	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29CD032J0JQAM003	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified		TOP	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29CL032J1JQAM023	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	QUAD		R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified		TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	3.3	YES
S29CL032J0JFAI102	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			32	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		1MX32	1M	-40 Cel			TIN LEAD		BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified		TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0			NOR TYPE		13 mm		54 ns	3.3
S29GL01GT10FHI023	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		64MX16	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm				1073741824 bit	2.7 V			e1	30	260			13 mm		100 ns	2.7
S29WS256P0SBFW003	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		16MX16	16M	-25 Cel	8,254	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B84	3	1.95 V	1 mm			8 mm	Not Qualified		BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1	40	260	NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
S29GL064M11TFIR0	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	8388608 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		8MX8	8M	-40 Cel	128	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			67108864 bit	3 V	IT ALSO OPERATES AT 2.7 TO 3.6 V SUPPLY FULL VOLTAGE RANGE	8	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	110 ns	3	YES
S29WS128POLBFW000	Infineon Technologies	FLASH	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	80 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	8,126	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B84	3						Not Qualified		BOTTOM/TOP	134217728 bit			8	e1	40	260	NOR TYPE	.000005 Amp		YES	13.5 ns		YES
S29CL016J0MFAI022	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified		TOP	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	3.3	YES
S29CL032J0RFFM002	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified		TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	48 ns	3.3	YES
S29CL032J0JBAM002	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B80		3.6 V	1.4 mm			9 mm	Not Qualified		TOP	33554432 bit	3 V			e0			NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29CD016J0PQAM023	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified		TOP	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29CL032J0RFAI002	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified		TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	13 mm	YES	48 ns	3.3	YES
S29CD016J1JFAI032	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified		BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29CL016J0JQFM123	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	FLATPACK					.8 mm	125 Cel		512KX32	512K	-40 Cel			MATTE TIN		QUAD		R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified		TOP	16777216 bit	3 V	TOP BOOT BLOCK		e3			NOR TYPE		20 mm		54 ns	3.3
S29CD032J0PFAI012	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified		BOTTOM	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29CD016J0MQAI030	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified		BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29CD016J0JBAM120	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			524288 words	2.6			32	GRID ARRAY, LOW PROFILE					1 mm	125 Cel		512KX32	512K	-40 Cel			TIN LEAD		BOTTOM		R-PBGA-B80		2.75 V	1.4 mm			9 mm				16777216 bit	2.5 V			e0					11 mm		54 ns	2.7
S29CL032J0RFFI103	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			32	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		1MX32	1M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified		TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1			NOR TYPE		13 mm		48 ns	3.3
S29CL016J0PFFI033	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified		BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	3.3	YES
S29GL064M11TAIR2	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	4194304 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	TIN LEAD	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm			14 mm	Not Qualified			67108864 bit	3 V	IT ALSO OPERATES AT 2.7 TO 3.6 V SUPPLY FULL VOLTAGE RANGE	4/8	e0		260	NOR TYPE	.000005 Amp	18.4 mm	YES	110 ns	3	YES
S29CD016J1MQAI022	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	2.6			32	FLATPACK					.8 mm	85 Cel		512KX32	512K	-40 Cel			TIN LEAD		QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified		TOP	16777216 bit	2.5 V			e0			NOR TYPE		20 mm		54 ns	2.7
S29CD016J0PFFM012	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified		BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29GL512S10DHIV10	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			8	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		S-PBGA-B64	3	3.6 V	1.4 mm			9 mm				536870912 bit	2.7 V			e1	30	260	NOR TYPE		9 mm		100 ns	2.7
S29GL256P11FAIR22	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			1	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		256MX1	256M	-40 Cel			TIN LEAD		BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified			268435456 bit	3 V			e0			NOR TYPE		13 mm		110 ns	3
S29CL032J1JFAI120	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			32	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		1MX32	1M	-40 Cel			TIN LEAD		BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified		TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0			NOR TYPE		13 mm		54 ns	3.3
S29CL016J0PFFI120	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		512KX32	512K	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified		TOP	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1					13 mm		54 ns	3.3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.