Infineon Technologies Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29NS064N0LBFW000	Infineon Technologies	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	60 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-25 Cel	4,63	YES		YES	BOTTOM		R-PBGA-B44							Not Qualified			TOP	67108864 bit						NOR TYPE	.00004 Amp		YES	80 ns		YES
S29CD016J1MFAI132	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	2.6			32	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		512KX32	512K	-40 Cel			TIN LEAD		BOTTOM		R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified			TOP	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e0			NOR TYPE		13 mm		54 ns	2.7
S26HL01GTGABHB003	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	2560000 Write/Erase Cycles	200 MHz	8 mm			SPI		1073741824 bit	2.7 V					NOR TYPE		8 mm			3
S28HS512TFPBHM0300	Infineon Technologies	FLASH																																																											1.8
S29CD016J0JQAM102	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6		FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified			TOP	16777216 bit	2.5 V	TOP BOOT BLOCK	e0			NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29CL016J0PFAI01	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	GRID ARRAY					1 mm	85 Cel		512KX32	512K	-40 Cel					BOTTOM		R-PBGA-B80		3.6 V	1.4 mm		66 MHz	11 mm	Not Qualified	.000065 ms		BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						13 mm		54 ns	3.3
S29CL016J0MQAI130	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	FLATPACK					.8 mm	85 Cel		512KX32	512K	-40 Cel			TIN LEAD		QUAD		R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified			TOP	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e0			NOR TYPE		20 mm		54 ns	3.3
S29CD032J1JBFI003	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		1MX32	1M	-40 Cel	16,62	YES		YES	BOTTOM		R-PBGA-B80		2.75 V	1.4 mm			9 mm	Not Qualified			TOP	33554432 bit	2.5 V					NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29VS064RAABHI013	Infineon Technologies	FLASH	INDUSTRIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL		8K,32K		4194304 words	1.8	YES		16	GRID ARRAY, FINE PITCH	BGA44,8X14,20	1			.5 mm	85 Cel		4MX16	4M	-40 Cel	4,127	YES		YES	BOTTOM		R-PBGA-B44		1.95 V	1 mm		104 MHz	5 mm				BOTTOM	67108864 bit	1.7 V					NOR TYPE	.00007 Amp	7.5 mm	YES		1.8	YES
S26HS512TFPBHM010	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	125 Cel	OPEN-DRAIN	64MX8	64M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24		2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	6 mm			SPI		536870912 bit	1.7 V					NOR TYPE		8 mm			1.8
S29CL016J0MQFI03	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	FLATPACK					.8 mm	85 Cel		512KX32	512K	-40 Cel					QUAD		R-PQFP-G80		3.6 V	3.35 mm		56 MHz	14 mm	Not Qualified	.000065 ms		BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						20 mm		54 ns	3.3
S29CD016J0MQFI133	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES	MATTE TIN	YES	QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified			BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK	e3	40	260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29CD032J1JQAI133	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	2.6			32	FLATPACK					.8 mm	85 Cel		1MX32	1M	-40 Cel			TIN LEAD		QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified			TOP	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e0			NOR TYPE		20 mm		54 ns	2.7
S29GL064N90FFI32	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		4MX16	4M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				67108864 bit	2.7 V		e1					13 mm		90 ns	3
S29CD016J0JFFI113	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified			BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK	e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29GL128P10TFCR23	Infineon Technologies	FLASH	OTHER	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		128MX1	128M	0 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				134217728 bit	3 V					NOR TYPE		18.4 mm		100 ns	3
S29GL512T13FHVV23	Infineon Technologies	FLASH
S29CD032J1JQAM022	Infineon Technologies	FLASH		80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES		32	FLATPACK	QFP80,.7X.9,32			20	.8 mm	125 Cel	3-STATE	1MX32	1M	-40 Cel	16,62	YES		YES	QUAD		R-PQFP-G80		2.75 V	3.35 mm	1000000 Write/Erase Cycles	40 MHz	14 mm		.00006 ms		TOP	33554432 bit	2.5 V					NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.6	YES
S29CD032J0PBAM022	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES		YES	BOTTOM		R-PBGA-B80		2.75 V	1.4 mm			9 mm	Not Qualified			TOP	33554432 bit	2.5 V					NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29CL032J1MQAI032	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			32	FLATPACK					.8 mm	85 Cel		1MX32	1M	-40 Cel			TIN LEAD		QUAD		R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified			BOTTOM	33554432 bit	3 V	TOP BOOT BLOCK	e0			NOR TYPE		20 mm		54 ns	3.3
S29CL016J0MBAI013	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,32		Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B80		3.6 V	1.4 mm			9 mm	Not Qualified			BOTTOM	16777216 bit	3 V		e0			NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S28HL512TFPBHV0100	Infineon Technologies	FLASH																																																											3
S26HL01GTFPBHI000	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm			SPI		1073741824 bit	2.7 V					NOR TYPE		8 mm			3
S29CL016J1JDGH037	Infineon Technologies	FLASH	AUTOMOTIVE	74	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	UNCASED CHIP						145 Cel		512KX32	512K	-40 Cel					UPPER		R-XUUC-N74		3.6 V					Not Qualified			BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK				NOR TYPE				54 ns	3.3
S29CL016J0PBFI012	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,32		Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES		YES	BOTTOM		R-PBGA-B80		3.6 V	1.4 mm			9 mm	Not Qualified			BOTTOM	16777216 bit	3 V					NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29CL032J0MBAM002	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES		YES	BOTTOM		R-PBGA-B80		3.6 V	1.4 mm			9 mm	Not Qualified			TOP	33554432 bit	3 V					NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29CD032J0JFFI02	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	16,62	YES		YES	BOTTOM		R-PBGA-B80		2.75 V	1.4 mm		40 MHz	11 mm	Not Qualified	.000065 ms		TOP	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29XS256R0PBHW13	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY					.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified			BOTTOM	268435456 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						7.7 mm		80 ns	1.8
S26HS256TFPBHI013	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	OPEN-DRAIN	32MX8	32M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24		2 V	1 mm	640000 Write/Erase Cycles	166 MHz	6 mm			SPI		268435456 bit	1.7 V					NOR TYPE		8 mm			1.8
S29GL512T12TFA020	Infineon Technologies	FLASH
S29CD032J0RFFM030	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified			BOTTOM	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK	e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	48 ns	2.7	YES
S29CD016J0MQFM03	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES		YES	QUAD		R-PQFP-G80		2.75 V	3.35 mm		56 MHz	14 mm	Not Qualified	.000065 ms		BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29CL016J0PQAM02	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	FLATPACK					.8 mm	125 Cel		512KX32	512K	-40 Cel					QUAD		R-PQFP-G80		3.6 V	3.35 mm		66 MHz	14 mm	Not Qualified	.000065 ms		TOP	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						20 mm		54 ns	3.3
S29GL064N11TFAV63	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		4MX16	4M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm				BOTTOM/TOP	67108864 bit	2.7 V					NOR TYPE		18.4 mm		110 ns	3
S29GL512T13DHV043	Infineon Technologies	FLASH
S29CL016J0JFFM01	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	GRID ARRAY					1 mm	125 Cel		512KX32	512K	-40 Cel					BOTTOM		R-PBGA-B80		3.6 V	1.4 mm		40 MHz	11 mm	Not Qualified	.000065 ms		BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						13 mm		54 ns	3.3
S29CL032J0RFAM00	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	GRID ARRAY					1 mm	125 Cel		512KX32	512K	-40 Cel					BOTTOM		R-PBGA-B80		3.6 V	1.4 mm		75 MHz	11 mm	Not Qualified	.000065 ms		TOP	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						13 mm		54 ns	3.3
S29GL064N90BFA040	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B48	3	3.6 V	1 mm			6.15 mm					67108864 bit	2.7 V							8.15 mm		90 ns	3
S29GL01GT10TFBV43	Infineon Technologies	FLASH
S29WS01GS0PWHW020	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.65 mm	85 Cel		64MX16	64M	-25 Cel					BOTTOM		R-PBGA-B186		1.95 V	1.2 mm			11 mm	Not Qualified				1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE						13 mm		115 ns	1.8
S29GL512T12DHI033	Infineon Technologies	FLASH
S29CD032J1JBFM002	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES		YES	BOTTOM		R-PBGA-B80		2.75 V	1.4 mm			9 mm	Not Qualified			TOP	33554432 bit	2.5 V					NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29CD016J0JBAI002	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B80		2.75 V	1.4 mm			9 mm	Not Qualified			TOP	16777216 bit	2.5 V		e0			NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29CD016J0PFFM112	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified			BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK	e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29GL064N11DFAV20	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM		S-PBGA-B64		3.6 V	1.4 mm			9 mm				BOTTOM/TOP	67108864 bit	2.7 V					NOR TYPE		9 mm		110 ns	3
S29GL512T11TFIV33	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		32MX16	32M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G56	3	3.6 V	1.2 mm			14 mm					536870912 bit	2.7 V		e3					18.4 mm		110 ns	2.7
S29CD016J0MQFM022	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6		FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES	MATTE TIN	YES	QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified			TOP	16777216 bit	2.5 V		e3			NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29CD032J0RQAI032	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6		FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	85 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified			BOTTOM	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e0			NOR TYPE	.00006 Amp	20 mm	YES	48 ns	2.7	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.