Infineon Technologies Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29GL032N90BFA040	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		2MX16	2M	-40 Cel					BOTTOM		R-PBGA-B48	3	3.6 V	1 mm			6.15 mm					33554432 bit	2.7 V							8.15 mm		90 ns	3
S29CL032J0PFFI122	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			32	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		1MX32	1M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified				33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e1			NOR TYPE		13 mm		54 ns	3.3
S29CD032J0MQAI020	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	85 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified			TOP	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e0		260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29VS128R0SBHW003	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS	32K,128K	76 mA	16777216 words	1.8	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20			10	.5 mm	85 Cel	3-STATE	16MX8	16M	-25 Cel	4,127	YES			BOTTOM		R-PBGA-B44		1.95 V	1 mm	100000 Write/Erase Cycles		6.2 mm	Not Qualified			TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00004 Amp	7.7 mm	YES	80 ns	1.8	NO
S29CD016J0JBFM012	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,32		Flash Memories		1 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES		YES	BOTTOM		R-PBGA-B80		2.75 V	1.4 mm			9 mm	Not Qualified			BOTTOM	16777216 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S26HL512TGABHI030	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	OPEN-DRAIN	64MX8	64M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	1280000 Write/Erase Cycles	200 MHz	6 mm			SPI		536870912 bit	2.7 V					NOR TYPE		8 mm			3
S28HL512TFPBHM0333	Infineon Technologies	FLASH																																																											3
S28HS256TGABHV0130	Infineon Technologies	FLASH																																																											1.8
S29CL032J1JFFI122	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			32	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		1MX32	1M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified				33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e1			NOR TYPE		13 mm		54 ns	3.3
S29GL512T13FAI043	Infineon Technologies	FLASH
S29NS064N0SBFW003	Infineon Technologies	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	60 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-25 Cel	4,63	YES		YES	BOTTOM		R-PBGA-B44							Not Qualified			TOP	67108864 bit						NOR TYPE	.00004 Amp		YES	80 ns		YES
S29GL512T11FHBV20	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			8	GRID ARRAY, LOW PROFILE		1			1 mm	105 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm					536870912 bit	2.7 V							13 mm		110 ns	2.7
S29GL064S70TFI013	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		8MX8	8M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm				BOTTOM/TOP	67108864 bit	2.7 V					NOR TYPE		18.4 mm		70 ns	3
S29CL032J1JQFM03	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	FLATPACK					.8 mm	125 Cel		512KX32	512K	-40 Cel					QUAD		R-PQFP-G80		3.6 V	3.35 mm		40 MHz	14 mm	Not Qualified	.000065 ms		BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						20 mm		54 ns	3.3
S29CL032J1JFAI132	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			32	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		1MX32	1M	-40 Cel			TIN LEAD		BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified			TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e0			NOR TYPE		13 mm		54 ns	3.3
S29CL016J0PQAM010	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	QUAD		R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified			BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK	e0		260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	3.3	YES
S29CL016J1JFFI133	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		512KX32	512K	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified			TOP	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e1			NOR TYPE		13 mm		54 ns	3.3
S28HL512TGABHI0100	Infineon Technologies	FLASH																																																											3
S29CD032J0PFFM02	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	2.6			32	GRID ARRAY					1 mm	125 Cel		512KX32	512K	-40 Cel					BOTTOM		R-PBGA-B80		2.75 V	1.4 mm		66 MHz	11 mm	Not Qualified	.000065 ms		TOP	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						13 mm		54 ns	2.7
S29CL032J0RBFM033	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES		YES	BOTTOM		R-PBGA-B80		3.6 V	1.4 mm			9 mm	Not Qualified			BOTTOM	33554432 bit	3 V					NOR TYPE	.00006 Amp	11 mm	YES	48 ns	2.7	YES
S29GL256P90FFIV12	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3			1	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		256MX1	256M	-40 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm	Not Qualified				268435456 bit	2.7 V					NOR TYPE		13 mm		90 ns	3
S29GL256N11TAIV22	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		16MX16	16M	-40 Cel			TIN LEAD		DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm					268435456 bit	2.7 V		e0			NOR TYPE		18.4 mm		110 ns	3
S29WS01GS0SWHW310	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.65 mm	85 Cel		64MX16	64M	-25 Cel					BOTTOM		R-PBGA-B186		1.95 V	1.2 mm			11 mm	Not Qualified				1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE						13 mm		115 ns	1.8
S29GL128P11TACR10	Infineon Technologies	FLASH	OTHER	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		128MX1	128M	0 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				134217728 bit	3 V					NOR TYPE		18.4 mm		110 ns	3
S29CD032J1JFFI023	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified			TOP	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29CL032J1JFFM03	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	GRID ARRAY					1 mm	125 Cel		512KX32	512K	-40 Cel					BOTTOM		R-PBGA-B80		3.6 V	1.4 mm		40 MHz	11 mm	Not Qualified	.000065 ms		BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						13 mm		54 ns	3.3
S29WS256R0PBHW220	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM		R-PBGA-B84		1.95 V	1 mm			8 mm				TOP	268435456 bit	1.7 V					NOR TYPE		11.6 mm		80 ns	1.8
S29GL01GT13TFAV33	Infineon Technologies	FLASH
S29CL016J0PQFM113	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	FLATPACK					.8 mm	125 Cel		512KX32	512K	-40 Cel			MATTE TIN		QUAD		R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified			BOTTOM	16777216 bit	3 V	TOP BOOT BLOCK	e3			NOR TYPE		20 mm		54 ns	3.3
S29GL064S80TFAV63	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		4MX16	4M	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm					67108864 bit	2.7 V							18.4 mm		80 ns	3
S29CD032J1MFFI030	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	2.6			32	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		1MX32	1M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified			TOP	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e1			NOR TYPE		13 mm		54 ns	2.7
S26HL01GTFPBHA000	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm			SPI		1073741824 bit	2.7 V					NOR TYPE		8 mm			3
S29CL016J0PFFI112	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		512KX32	512K	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified			BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK	e1			NOR TYPE		13 mm		54 ns	3.3
S29GL064S80TFV060	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	105 Cel		8MX8	8M	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			14 mm					67108864 bit	2.7 V							18.4 mm		80 ns	3
S29CD032J0MBFI030	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		1MX32	1M	-40 Cel	16,62	YES		YES	BOTTOM		R-PBGA-B80		2.75 V	1.4 mm			9 mm	Not Qualified			BOTTOM	33554432 bit	2.5 V					NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29GL512T10FHA023	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		32MX16	32M	-40 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm					536870912 bit	2.7 V	CAN ALSO BE ORGANISED AS 512MX1				NOR TYPE		13 mm		100 ns	2.7
S29CL032J0JQAI03	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	85 Cel		512KX32	512K	-40 Cel	16,62	YES		YES	QUAD		R-PQFP-G80		3.6 V	3.35 mm		40 MHz	14 mm	Not Qualified	.000065 ms		BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE	.00006 Amp	20 mm	YES	54 ns	3.3	YES
S26HL01GTGABHV013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	2560000 Write/Erase Cycles	200 MHz	8 mm			SPI		1073741824 bit	2.7 V					NOR TYPE		8 mm			3
S28HS01GTFPBHM0333	Infineon Technologies	FLASH																																																											1.8
S29CD032J0MFAI103	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	2.6			32	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		1MX32	1M	-40 Cel			TIN LEAD		BOTTOM		R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified			TOP	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e0			NOR TYPE		13 mm		54 ns	2.7
S29CD032J1MFAI030	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	2.6			32	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		1MX32	1M	-40 Cel			TIN LEAD		BOTTOM		R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified			TOP	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e0			NOR TYPE		13 mm		54 ns	2.7
S29CD032J0JFFI132	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	2.6			32	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		1MX32	1M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified			TOP	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e1			NOR TYPE		13 mm		54 ns	2.7
S29CL032J0MQFM01	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	FLATPACK					.8 mm	125 Cel		512KX32	512K	-40 Cel					QUAD		R-PQFP-G80		3.6 V	3.35 mm		56 MHz	14 mm	Not Qualified	.000065 ms		BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						20 mm		54 ns	3.3
S29GL01GT12FHAV10	Infineon Technologies	FLASH
S29GL512T12TFAV30	Infineon Technologies	FLASH
S29CL032J0PQAI033	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	85 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	QUAD		R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified			BOTTOM	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK	e0		260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	3.3	YES
S29GL064N11TFAV10	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		4MX16	4M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm				BOTTOM/TOP	67108864 bit	2.7 V					NOR TYPE		18.4 mm		110 ns	3
S29CD032J0PQAI133	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	2.6			32	FLATPACK					.8 mm	85 Cel		1MX32	1M	-40 Cel			TIN LEAD		QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified			TOP	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e0			NOR TYPE		20 mm		54 ns	2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.