Macronix Flash Memory 227

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MX25L6406EM2I-12GF	Macronix	FLASH																																																									3
MX25L6406EM2I-12GTR	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		25 mA	8388608 words	3.3			8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	85 Cel		8MX8	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	86 MHz	5.23 mm		SPI		67108864 bit	2.7 V					NOR TYPE	.00002 Amp	5.28 mm			3.3
MX25L1606EM2I-12G/TR	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		25 mA	2097152 words	3			8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	85 Cel		2MX8	2M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	86 MHz	5.23 mm		SPI		16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	5.28 mm			3
MX25R1635FZUIH0	Macronix	FLASH	INDUSTRIAL	8	HVBCC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	SERIAL	SYNCHRONOUS			4194304 words	1.8			4	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE		2			.5 mm	85 Cel		4MX4	4M	-40 Cel					BOTTOM		R-PBCC-B8		3.6 V	.6 mm		80 MHz	2 mm				16777216 bit	1.65 V	ALSO CONFIGURABLE AS 16MX1		NOT SPECIFIED	NOT SPECIFIED			3 mm			1.8
MX25L51245GZ2I-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			134217728 words	3			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		128MX4	128M	-40 Cel			TIN		DUAL		R-PDSO-N8	3	3.6 V	.8 mm		104 MHz	6 mm				536870912 bit	2.7 V	CAN BE ORGNISED AS 512 MBIT X 1	e3					8 mm			2.7
MX25L4006EM1I-12G/TR	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		20 mA	524288 words	3.3			8	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	86 MHz	3.9 mm		SPI		4194304 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000025 Amp	4.9 mm			2.7
MX25R3235FZNIL0	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		6 mA	4194304 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	2		20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	80 MHz	5 mm		SPI		33554432 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000024 Amp	6 mm			1.8
MX60LF8G18AC-TI	Macronix	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1073741824 words	3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		1GX8	1G	-40 Cel			TIN		DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm				8589934592 bit	2.7 V		e3			SLC NAND TYPE		18.4 mm			3
MX25L1606EZUI-12G	Macronix	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		25 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.15,32	1	Flash Memories	20	.8 mm	85 Cel		2MX8	2M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	S-PDSO-N8	3	3.6 V	.6 mm	100000 Write/Erase Cycles	86 MHz	4 mm	Not Qualified	SPI		16777216 bit	2.7 V		e3	40	260	NOR TYPE	.00002 Amp	4 mm			3
MX25L3233FM2I-08Q	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		17 mA	4194304 words	3			8	SMALL OUTLINE	SOP8,.3	4		20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.23 mm		SPI		33554432 bit	2.65 V	ALSO ORGANISED AS 32MX1		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	5.28 mm			3
MX25L8006EM2I-12G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		20 mA	4194304 words	3		3/3.3	2	SMALL OUTLINE	SOP8,.3	1	Flash Memories	20	1.27 mm	85 Cel		4MX2	4M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	86 MHz	5.23 mm	Not Qualified	SPI		8388608 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	5.28 mm			2.7
MX29F800CTTI-70G	Macronix	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	50 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified		TOP	8388608 bit	4.5 V	TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	18.4 mm		70 ns	5	YES
MX25U51245GXDI00	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		40 mA	67108864 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	166 MHz	6 mm		SPI		536870912 bit	1.65 V		e1			NOR TYPE	.00005 Amp	8 mm			1.8
MX25L3206EM2I-12G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3.3		3/3.3	2	SMALL OUTLINE	SOP8,.31	1	Flash Memories	20	1.27 mm	85 Cel	TOTEM POLE	16MX2	16M	-40 Cel			TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	86 MHz	5.23 mm	Not Qualified	3-WIRE		33554432 bit	2.7 V		e3			NOR TYPE	.00004 Amp	5.28 mm			3.3
MX25L51245GMI-10G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			134217728 words	3			4	SMALL OUTLINE		2			1.27 mm	85 Cel		128MX4	128M	-40 Cel			Matte Tin (Sn)		DUAL		R-PDSO-G16	3	3.6 V	2.65 mm		104 MHz	7.52 mm				536870912 bit	2.7 V	CAN BE ORGNISED AS 512 MBIT X 1	e3	40	260			10.3 mm			2.7
MX25L3233FM1I-08Q	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		17 mA	4194304 words	3			8	SMALL OUTLINE	SOP8,.25	4		20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	133 MHz	3.9 mm		SPI		33554432 bit	2.65 V	ALSO ORGANISED AS 32MX1		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	4.9 mm			3
MX25L12835FMI-10G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		25 mA	33554432 words	3		3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel		32MX4	32M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.52 mm	Not Qualified	SPI		134217728 bit	2.7 V	IT ALSO CONFIGURED AS 128M X 1	e3			NOR TYPE	.00002 Amp	10.3 mm			3
MX25L25645GXDI-08G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		25 mA	33554432 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	120 MHz	6 mm		SPI		268435456 bit	2.7 V		e1			NOR TYPE	.00002 Amp	8 mm			3
MX25V8035FZUI	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			2097152 words	3			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.5 mm	85 Cel		2MX4	2M	-40 Cel					DUAL		R-PDSO-N8		3.6 V	.6 mm		108 MHz	2 mm				8388608 bit	2.3 V	ALSO IT CAN BE CONFIGURED AS 8M X 1 BIT		NOT SPECIFIED	NOT SPECIFIED			3 mm			3
MX25V1635FZNQ	Macronix	FLASH																																																									3
MX25L512EMI-10G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		20 mA	262144 words	3		3/3.3	2	SMALL OUTLINE	SOP8,.25	1	Flash Memories	20	1.27 mm	85 Cel		256KX2	256K	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm	Not Qualified	SPI		524288 bit	2.7 V		e3			NOR TYPE	.00001 Amp	4.9 mm			2.7
MX25R1635FM1IL0	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			4194304 words	1.8			4	SMALL OUTLINE		2			1.27 mm	85 Cel		4MX4	4M	-40 Cel			TIN		DUAL		R-PDSO-G8		3.6 V	1.75 mm		80 MHz	3.9 mm				16777216 bit	1.65 V	IT IS ALSO CONFIGURED AS 16M X 1	e3					4.9 mm			3
MX25L51245GXDI-08G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			134217728 words	3			4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		128MX4	128M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		166 MHz	6 mm				536870912 bit	2.7 V	ALSO CONFIGURED WITH 1-BIT WIDTH		NOT SPECIFIED	NOT SPECIFIED			8 mm			3
MX25L12835FZ2I-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		25 mA	33554432 words	3		3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	2	Flash Memories	20	1.27 mm	85 Cel		32MX4	32M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified	SPI		134217728 bit	2.7 V	IT ALSO CONFIGURED AS 128M X 1	e3			NOR TYPE	.00002 Amp	8 mm			3
MX25UM51345GXDI00	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, THIN PROFILE		1			1 mm	85 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24		2 V	1.2 mm		200 MHz	6 mm				536870912 bit	1.65 V							8 mm			1.8
MX66L2G45GXRI00	Macronix	FLASH	INDUSTRIAL	24	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		130 mA	268435456 words	3			8	GRID ARRAY, LOW PROFILE	BGA24,5X5,40	4		20	1 mm	85 Cel	3-STATE	256MX8	256M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.3 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		2147483648 bit	2.7 V	IT CAN ALSO CONFIGURED AS 1G X 2 AND 2G X 1		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0006 Amp	8 mm			3
MX25V1006FM1I/TR	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		20 mA	131072 words	3.3			8	SMALL OUTLINE	SOP8,.25	1		20	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel					DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	3.9 mm		SPI		1048576 bit	2.7 V	ALSO OPERATES AT 2.3-2.7V@50MHZ		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000001 Amp	4.9 mm			3.3
MX25L12845GM2I-10G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			4	SMALL OUTLINE		2			1.27 mm	85 Cel		32MX4	32M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G8	3	3.6 V	2.16 mm		104 MHz	5.23 mm				134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1	e3					5.28 mm			3
MX25U6435FM2I-10G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	1.8		1.8	4	SMALL OUTLINE	SOP8,.3	2	Flash Memories	10	1.27 mm	85 Cel		16MX4	16M	-40 Cel			Matte Tin (Sn)		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	2 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.23 mm	Not Qualified	SPI		67108864 bit	1.65 V	CAN BE ORGANISED AS 64 MBIT X 1	e3	40	260	NOR TYPE	.00002 Amp	5.28 mm			1.8
MX25V1006FM1I	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			524288 words	3.3			2	SMALL OUTLINE		1			1.27 mm	85 Cel		512KX2	512K	-40 Cel			TIN		DUAL		R-PDSO-G8		3.6 V	1.75 mm		80 MHz	3.9 mm				1048576 bit	2.7 V	ALSO OPERATES 2.3-2.7V SUP @ 50MHZ	e3					4.9 mm			3.3
MX25L6433FM2I-08Q	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		17 mA	8388608 words	3.3			8	SMALL OUTLINE	SOP8,.3	2		20	1.27 mm	85 Cel		8MX8	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.23 mm		SPI		67108864 bit	2.65 V	ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	5.28 mm			3.3
MX25U12835FM2I-10G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			33554432 words	1.8			4	SMALL OUTLINE		2			1.27 mm	85 Cel		32MX4	32M	-40 Cel					DUAL		R-PDSO-G8		2 V	2.16 mm		104 MHz	5.23 mm				134217728 bit	1.65 V	IT CAN ALSO BE CONFIGURABLE AS 128MX1		NOT SPECIFIED	NOT SPECIFIED			5.28 mm			1.8
MX25U12835FZ2I-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		20 mA	33554432 words	1.8		1.8	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	2	Flash Memories	10	1.27 mm	85 Cel		32MX4	32M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified	SPI		134217728 bit	1.65 V	CAN BE ORGANISED AS 128 MBIT X 1	e3			NOR TYPE	.00002 Amp	8 mm			1.8
MX25L1606EMI-12G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		25 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4	1	Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	86 MHz	7.52 mm	Not Qualified	SPI		16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	10.3 mm			3
MX25U3235FM2I-10G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		25 mA	8388608 words	1.8		1.8	4	SMALL OUTLINE	SOP8,.3	2	Flash Memories	10	1.27 mm	85 Cel		8MX4	8M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	2 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.23 mm	Not Qualified	SPI		33554432 bit	1.65 V	CAN BE ORGANISED AS 32 MBIT X 1	e3			NOR TYPE	.00002 Amp	5.28 mm			1.8
MX25L3233FZNI-08Q	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		17 mA	4194304 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	4		20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm		SPI		33554432 bit	2.65 V	ALSO ORGANISED AS 32MX1		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	6 mm			3
MX25L12833FMI-10G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			16777216 words	3			8	SMALL OUTLINE		4			1.27 mm	85 Cel		16MX8	16M	-40 Cel			TIN		DUAL		R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.52 mm				134217728 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 64M X 2 AND 128M X 1	e3					10.3 mm			3
MX25L12835FZNI-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		25 mA	33554432 words	3		3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	2	Flash Memories	20	1.27 mm	85 Cel		32MX4	32M	-40 Cel			TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified	SPI		134217728 bit	2.7 V	IT ALSO CONFIGURED AS 128M X 1	e3			NOR TYPE	.00002 Amp	6 mm			3
MX25V1635FM2I	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			4194304 words	3			4	SMALL OUTLINE		2			1.27 mm	85 Cel		4MX4	4M	-40 Cel					DUAL		R-PDSO-G8		3.6 V	2.16 mm		80 MHz	5.23 mm				16777216 bit	2.3 V	ALSO IT CAN BE CONFIGURED AS 16M X 1 BIT		NOT SPECIFIED	NOT SPECIFIED			5.28 mm			3
MX66L1G45GMI-08G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			268435456 words	3			4	SMALL OUTLINE		2			1.27 mm	85 Cel		256MX4	256M	-40 Cel					DUAL		R-PDSO-G16		3.6 V	2.65 mm		166 MHz	7.52 mm				1073741824 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 1G X 1 BIT		NOT SPECIFIED	NOT SPECIFIED			10.3 mm			3
MX25L12845GMI-08G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			4	SMALL OUTLINE		2			1.27 mm	85 Cel		32MX4	32M	-40 Cel					DUAL		R-PDSO-G16		3.6 V	2.65 mm		120 MHz	7.52 mm				134217728 bit	2.7 V	CAN BE ORGANISED AS 128 M X 1		NOT SPECIFIED	NOT SPECIFIED			10.3 mm			3
MX25V1635FZUI	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			4194304 words	3			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.5 mm	85 Cel		4MX4	4M	-40 Cel					DUAL		R-PDSO-N8		3.6 V	.6 mm		80 MHz	2 mm				16777216 bit	2.3 V	ALSO IT CAN BE CONFIGURED AS 16M X 1 BIT		NOT SPECIFIED	NOT SPECIFIED			3 mm			3
MX30LF1G18AC-XKI	Macronix	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			131072 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128KX8	128K	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm				1048576 bit	2.7 V		e1			SLC NAND TYPE		11 mm			3
MX66L1G45GMI-10G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			268435456 words	3			4	SMALL OUTLINE		2			1.27 mm	85 Cel		256MX4	256M	-40 Cel			TIN		DUAL		R-PDSO-G16		3.6 V	2.65 mm		104 MHz	7.52 mm				1073741824 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 1G X 1 BIT	e3					10.3 mm			2.7
MX29LV160DBTI-70G	Macronix	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	MATTE TIN	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK	e3			NOR TYPE	.000015 Amp	18.4 mm	YES	70 ns	3	YES
MX25L12845GM2I-08G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			4	SMALL OUTLINE		2			1.27 mm	85 Cel		32MX4	32M	-40 Cel			TIN		DUAL		R-PDSO-G8		3.6 V	2.16 mm		120 MHz	5.23 mm				134217728 bit	2.7 V	CAN BE ORGANISED AS 128 M X 1	e3					5.28 mm			3
MX25L25645GMI-08G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		25 mA	33554432 words	3			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel			TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	120 MHz	7.52 mm		SPI		268435456 bit	2.7 V		e3			NOR TYPE	.00002 Amp	10.3 mm			3
MX25L6406EMI-12G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		25 mA	8388608 words	3.3		3/3.3	8	SMALL OUTLINE	SOP16,.4	1	Flash Memories	20	1.27 mm	85 Cel		8MX8	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	86 MHz	7.52 mm	Not Qualified	SPI		67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	10.3 mm			3.3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.