Macronix Flash Memory 227

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

MX25L25673GZNI-08G

Macronix

FLASH

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

30 mA

33554432 words

3

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.25

4

20

1.27 mm

85 Cel

3-STATE

32MX8

32M

-40 Cel

DUAL

SOFTWARE

R-PDSO-N8

3.6 V

.8 mm

100000 Write/Erase Cycles

133 MHz

5 mm

SPI

268435456 bit

2.7 V

ALSO ORGANISED AS 128MbX2 AND 256Mbx1

NOR TYPE

.0001 Amp

6 mm

3

MX25L3206EZUI-12G

Macronix

FLASH

INDUSTRIAL

8

HVSON

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

25 mA

16777216 words

3.3

3/3.3

2

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.15,32

1

Flash Memories

20

.8 mm

85 Cel

16MX2

16M

-40 Cel

Matte Tin (Sn) - annealed

DUAL

HARDWARE/SOFTWARE

S-PDSO-N8

3

3.6 V

.6 mm

100000 Write/Erase Cycles

86 MHz

4 mm

Not Qualified

SPI

33554432 bit

2.7 V

e3

40

260

NOR TYPE

.00002 Amp

4 mm

3.3

MX25L51245GXDJ-10G

Macronix

FLASH

INDUSTRIAL

24

TBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

134217728 words

3

4

GRID ARRAY, THIN PROFILE

2

1 mm

105 Cel

128MX4

128M

-40 Cel

BOTTOM

R-PBGA-B24

3.6 V

1.2 mm

104 MHz

6 mm

536870912 bit

2.7 V

ALSO CONFIGURED WITH 1-BIT WIDTH

NOT SPECIFIED

NOT SPECIFIED

8 mm

3

MX25L6445EM2I-10G

Macronix

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

25 mA

16777216 words

3

3/3.3

4

SMALL OUTLINE

SOP8,.3

2

Flash Memories

20

1.27 mm

85 Cel

16MX4

16M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

3.6 V

2.16 mm

100000 Write/Erase Cycles

104 MHz

5.23 mm

Not Qualified

5 ms

SPI

67108864 bit

2.7 V

ALSO CONFIGURABLE AS 64M X 1, 20 YEAR DATA RETENTION

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.00002 Amp

5.28 mm

3

MX25R1635FM2IH1

Macronix

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

4194304 words

1.8

4

SMALL OUTLINE

2

1.27 mm

85 Cel

4MX4

4M

-40 Cel

DUAL

R-PDSO-G8

3.6 V

2.16 mm

80 MHz

5.23 mm

16777216 bit

1.65 V

IT IS ALSO CONFIGURED AS 16M X 1

5.28 mm

3

MX25R2035FZUIL0

Macronix

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

524288 words

1.8

4

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

2

.5 mm

85 Cel

512KX4

512K

-40 Cel

DUAL

R-PDSO-N8

3.6 V

.6 mm

80 MHz

2 mm

2097152 bit

1.65 V

IT IS ALSO CONFIGURED AS 2M X 1

NOT SPECIFIED

NOT SPECIFIED

3 mm

3

MX25R3235FM2IL0

Macronix

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

6 mA

4194304 words

1.8

8

SMALL OUTLINE

SOP8,.3

2

20

1.27 mm

85 Cel

3-STATE

4MX8

4M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

3.6 V

1.75 mm

100000 Write/Erase Cycles

80 MHz

5.23 mm

SPI

33554432 bit

1.65 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000024 Amp

5.28 mm

1.8

MX25R4035FM1IL0

Macronix

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

1048576 words

1.8

4

SMALL OUTLINE

2

1.27 mm

85 Cel

1MX4

1M

-40 Cel

TIN

DUAL

R-PDSO-G8

3.6 V

1.75 mm

104 MHz

3.9 mm

4194304 bit

1.65 V

IT IS ALSO CONFIGURED AS 4M X 1

e3

4.9 mm

3

MX25R4035FZUIL0

Macronix

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

1048576 words

1.8

4

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

2

.5 mm

85 Cel

1MX4

1M

-40 Cel

DUAL

R-PDSO-N8

3.6 V

.6 mm

104 MHz

2 mm

4194304 bit

1.65 V

IT IS ALSO CONFIGURED AS 4M X 1

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

3 mm

3

MX25R8035FM1IL0TR

Macronix

FLASH

1.8

MX25U12835FMI-10G

Macronix

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

20 mA

33554432 words

1.8

1.8

4

SMALL OUTLINE

SOP16,.4

2

Flash Memories

10

1.27 mm

85 Cel

32MX4

32M

-40 Cel

MATTE TIN

DUAL

HARDWARE/SOFTWARE

R-PDSO-G16

3

2 V

2.65 mm

100000 Write/Erase Cycles

104 MHz

7.52 mm

Not Qualified

SPI

134217728 bit

1.65 V

CAN BE ORGANISED AS 128 MBIT X 1

e3

NOR TYPE

.00002 Amp

10.3 mm

1.8

MX25V16066M2I02

Macronix

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

15 mA

2097152 words

3

8

SMALL OUTLINE

SOP8,.3

2

20

1.27 mm

85 Cel

3-STATE

2MX8

2M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

3.6 V

2.16 mm

100000 Write/Erase Cycles

80 MHz

5.23 mm

SPI

16777216 bit

2.7 V

ALSO AVAILABLE WITH 2.3VMIN@50MHZ

NOR TYPE

.00002 Amp

5.28 mm

3

MX25V20066M1I02

Macronix

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

15 mA

262144 words

3

8

SMALL OUTLINE

SOP8,.25

20

1.27 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

DUAL

HARDWARE

R-PDSO-G8

3.6 V

1.75 mm

100000 Write/Erase Cycles

80 MHz

3.9 mm

SPI

2097152 bit

2.7 V

ALSO AVAILABLE WITH 2.3VMIN@50MHZ

NOR TYPE

.00002 Amp

4.9 mm

3

MX29F800CBMI-70G

Macronix

FLASH

INDUSTRIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

50 mA

524288 words

5

YES

5

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

85 Cel

512KX16

512K

-40 Cel

1,2,1,15

YES

TIN

YES

DUAL

R-PDSO-G44

5.5 V

3 mm

100000 Write/Erase Cycles

12.6 mm

Not Qualified

BOTTOM

8388608 bit

4.5 V

BOTTOM BOOT BLOCK

e3

NOR TYPE

.00005 Amp

28.5 mm

70 ns

5

YES

MX29F800CBTI-70GTR

Macronix

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

16

SMALL OUTLINE, THIN PROFILE

8

.5 mm

85 Cel

512KX16

512K

-40 Cel

MATTE TIN

DUAL

R-PDSO-G48

3

5.5 V

1.2 mm

12 mm

BOTTOM

8388608 bit

4.5 V

BOTTOM BOOT BLOCK

e3

NOR TYPE

18.4 mm

70 ns

5

MX29GL320EBTI-70G

Macronix

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8K,64K

100 mA

2097152 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

2MX16

2M

-40 Cel

8,63

YES

TIN

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM

33554432 bit

2.7 V

BOTTOM BOOT BLOCK

8/16

e3

NOR TYPE

.0001 Amp

18.4 mm

YES

70 ns

3

YES

MX29LV320EBTI-70G

Macronix

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8K,64K

30 mA

2097152 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

2MX16

2M

-40 Cel

8,63

YES

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM

33554432 bit

2.7 V

BOTTOM BOOT BLOCK

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000015 Amp

18.4 mm

YES

70 ns

3

YES

MX29LV640ETTI-70G

Macronix

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4194304 words

3

16

SMALL OUTLINE, THIN PROFILE

8

.5 mm

85 Cel

4MX16

4M

-40 Cel

MATTE TIN

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

67108864 bit

2.7 V

TOP BOOT BLOCK

e3

18.4 mm

70 ns

3

MX30LF1G08AA-TI

Macronix

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

128K

30 mA

134217728 words

3.3

NO

3/3.3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

Flash Memories

.5 mm

85 Cel

128MX8

128M

-40 Cel

1K

YES

MATTE TIN

YES

DUAL

R-PDSO-G48

3

3.6 V

1.2 mm

12 mm

Not Qualified

1073741824 bit

2.7 V

2K

e3

30

260

SLC NAND TYPE

.00005 Amp

18.4 mm

25 ns

3.3

NO

MX35LF2GE4AB-MI

Macronix

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

30 mA

268435456 words

3

3/3.3

8

SMALL OUTLINE

SOP16,.4

Flash Memories

10

1.27 mm

85 Cel

3-STATE

256MX8

256M

-40 Cel

MATTE TIN

DUAL

HARDWARE

R-PDSO-G16

3

3.6 V

2.65 mm

100000 Write/Erase Cycles

104 MHz

7.52 mm

Not Qualified

SPI

2147483648 bit

2.7 V

e3

SLC NAND TYPE

.00005 Amp

10.3 mm

3

MX25L12845EMI-10G

Macronix

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

25 mA

33554432 words

3

3/3.3

4

SMALL OUTLINE

SOP16,.4

2

Flash Memories

20

1.27 mm

85 Cel

32MX4

32M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G16

3.6 V

2.65 mm

100000 Write/Erase Cycles

104 MHz

7.52 mm

Not Qualified

5 ms

SPI

134217728 bit

2.7 V

ALSO CONFIGURABLE AS 128M X 1, 20 YEAR DATA RETENTION

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.00004 Amp

10.3 mm

3

MX25L3206EZNI-12G

Macronix

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

25 mA

16777216 words

3.3

3/3.3

2

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.25

1

Flash Memories

20

1.27 mm

85 Cel

16MX2

16M

-40 Cel

MATTE TIN

DUAL

HARDWARE/SOFTWARE

R-PDSO-N8

3

3.6 V

.8 mm

100000 Write/Erase Cycles

86 MHz

5 mm

Not Qualified

SPI

33554432 bit

2.7 V

e3

NOR TYPE

.00002 Amp

6 mm

3.3

MX25L3233FMI-08G

Macronix

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

17 mA

4194304 words

3

8

SMALL OUTLINE

SOP16,.4

4

20

1.27 mm

85 Cel

3-STATE

4MX8

4M

-40 Cel

TIN

DUAL

HARDWARE/SOFTWARE

R-PDSO-G16

3.6 V

2.65 mm

100000 Write/Erase Cycles

133 MHz

7.52 mm

SPI

33554432 bit

2.65 V

ALSO ORGANISED AS 32MX1

e3

NOR TYPE

.00005 Amp

10.3 mm

3

MX25U12835FBBI-10G

Macronix

FLASH

INDUSTRIAL

23

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

33554432 words

1.8

4

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2

.5 mm

85 Cel

32MX4

32M

-40 Cel

BOTTOM

R-PBGA-B23

2 V

.52 mm

104 MHz

134217728 bit

1.65 V

IT CAN ALSO BE CONFIGURABLE AS 128MX1

NOT SPECIFIED

NOT SPECIFIED

1.8

MX25U12835FXDI-10G

Macronix

FLASH

INDUSTRIAL

24

TBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

33554432 words

1.8

4

GRID ARRAY, THIN PROFILE

2

1 mm

85 Cel

32MX4

32M

-40 Cel

BOTTOM

R-PBGA-B24

2 V

1.2 mm

104 MHz

6 mm

134217728 bit

1.65 V

IT CAN ALSO BE CONFIGURABLE AS 128MX1

NOT SPECIFIED

NOT SPECIFIED

8 mm

1.8

MX25U12835FZNI-08G

Macronix

FLASH

INDUSTRIAL

8

VSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

27 mA

33554432 words

1.8

1.8

4

SMALL OUTLINE, VERY THIN PROFILE

SOLCC8,.25

2

Flash Memories

10

1.27 mm

85 Cel

32MX4

32M

-40 Cel

MATTE TIN

DUAL

HARDWARE/SOFTWARE

R-PDSO-N8

3

2 V

.8 mm

100000 Write/Erase Cycles

133 MHz

5 mm

Not Qualified

SPI

134217728 bit

1.65 V

ALSO CONFIGURABLE AS 128M X 1

e3

NOR TYPE

.00002 Amp

6 mm

1.8

MX25U12872FM2I02

Macronix

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

25 mA

16777216 words

1.8

8

SMALL OUTLINE

SOP8,.3

4

20

1.27 mm

85 Cel

3-STATE

16MX8

16M

-40 Cel

DUAL

HARDWARE

R-PDSO-G8

2 V

2.16 mm

100000 Write/Erase Cycles

133 MHz

5.23 mm

SPI

134217728 bit

1.65 V

IT ALSO CAN BE CONFIGURED AS 64M X 2

NOR TYPE

.000005 Amp

5.28 mm

1.8

MX25U3235FBAI-10G

Macronix

FLASH

INDUSTRIAL

12

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

8388608 words

1.8

4

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2

.5 mm

85 Cel

8MX4

8M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B12

3

2 V

.48 mm

104 MHz

33554432 bit

1.65 V

ALSO IT CAN BE CONFIGURED AS 32M X 1 BIT

e1

1.8

MX25U6432FM2I02

Macronix

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

8388608 words

1.8

8

SMALL OUTLINE

4

1.27 mm

85 Cel

8MX8

8M

-40 Cel

DUAL

R-PDSO-G8

2 V

2.16 mm

133 MHz

5.23 mm

67108864 bit

1.65 V

32M X 2BIT

NOT SPECIFIED

NOT SPECIFIED

5.28 mm

1.8

MX25U8035FZUI

Macronix

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

1048576 words

1.8

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

4

.5 mm

85 Cel

1MX8

1M

-40 Cel

DUAL

R-PDSO-N8

2 V

.6 mm

108 MHz

2 mm

8388608 bit

1.65 V

IT CAN ALSO BE CONFIGURED AS 4M X 2 AND 8M X 1

NOT SPECIFIED

NOT SPECIFIED

3 mm

1.8

MX29LV400CBTI-70G

Macronix

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

30 mA

4194304 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

4MX16

4M

-40 Cel

1,2,1,7

YES

Tin (Sn)

YES

DUAL

R-PDSO-G48

3

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM

67108864 bit

2.7 V

e3

NOR TYPE

.000005 Amp

18.4 mm

YES

70 ns

3

YES

MX30LF1G28AD-TI

Macronix

FLASH

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

128K

50 mA

134217728 words

3

NO

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

10

.5 mm

85 Cel

3-STATE

128MX8

128M

-40 Cel

1K

NO

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

60000 Write/Erase Cycles

12 mm

.00002 ms

1073741824 bit

2.7 V

2K

SLC NAND TYPE

.00005 Amp

18.4 mm

3

NO

MX25L1606EZUI-12GTR

Macronix

FLASH

INDUSTRIAL

8

HVSON

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

25 mA

2097152 words

3

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.15,32

1

20

.8 mm

85 Cel

2MX8

2M

-40 Cel

MATTE TIN

DUAL

HARDWARE/SOFTWARE

S-PDSO-N8

3

3.6 V

.6 mm

100000 Write/Erase Cycles

86 MHz

4 mm

SPI

16777216 bit

2.7 V

e3

40

260

NOR TYPE

.00002 Amp

4 mm

3

MX25R8035FM2IH0

Macronix

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2097152 words

1.8

4

SMALL OUTLINE

2

1.27 mm

85 Cel

2MX4

2M

-40 Cel

DUAL

R-PDSO-G8

3.6 V

2.16 mm

104 MHz

5.23 mm

8388608 bit

1.65 V

IT IS ALSO CONFIGURED AS 8M X 1

NOT SPECIFIED

NOT SPECIFIED

5.28 mm

1.8

MX25U6432FBBI02

Macronix

FLASH

INDUSTRIAL

8

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

25 mA

8388608 words

1.8

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA14,4X6,20

2

20

.5 mm

85 Cel

8MX8

8M

-40 Cel

BOTTOM

HARDWARE/SOFTWARE

R-PBGA-B14

2 V

.45 mm

133 MHz

67108864 bit

1.65 V

64MX1BIT

NOR TYPE

.000005 Amp

1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.