Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Sector Size (Words) | Maximum Supply Current | No. of Words | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Toggle Bit | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | No. of Sectors/Size | Command User Interface | Terminal Finish | Ready or Busy | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Maximum Write Cycle Time (tWC) | Serial Bus Type | Boot Block | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | Page Size (words) | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Type | Maximum Standby Current | Length | Common Flash Interface | Maximum Access Time | Programming Voltage (V) | Data Polling |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Macronix |
FLASH |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
30 mA |
33554432 words |
3 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.25 |
4 |
20 |
1.27 mm |
85 Cel |
3-STATE |
32MX8 |
32M |
-40 Cel |
DUAL |
SOFTWARE |
R-PDSO-N8 |
3.6 V |
.8 mm |
100000 Write/Erase Cycles |
133 MHz |
5 mm |
SPI |
268435456 bit |
2.7 V |
ALSO ORGANISED AS 128MbX2 AND 256Mbx1 |
NOR TYPE |
.0001 Amp |
6 mm |
3 |
||||||||||||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
8 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
25 mA |
16777216 words |
3.3 |
3/3.3 |
2 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.15,32 |
1 |
Flash Memories |
20 |
.8 mm |
85 Cel |
16MX2 |
16M |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
HARDWARE/SOFTWARE |
S-PDSO-N8 |
3 |
3.6 V |
.6 mm |
100000 Write/Erase Cycles |
86 MHz |
4 mm |
Not Qualified |
SPI |
33554432 bit |
2.7 V |
e3 |
40 |
260 |
NOR TYPE |
.00002 Amp |
4 mm |
3.3 |
|||||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
24 |
TBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
SERIAL |
SYNCHRONOUS |
134217728 words |
3 |
4 |
GRID ARRAY, THIN PROFILE |
2 |
1 mm |
105 Cel |
128MX4 |
128M |
-40 Cel |
BOTTOM |
R-PBGA-B24 |
3.6 V |
1.2 mm |
104 MHz |
6 mm |
536870912 bit |
2.7 V |
ALSO CONFIGURED WITH 1-BIT WIDTH |
NOT SPECIFIED |
NOT SPECIFIED |
8 mm |
3 |
||||||||||||||||||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
25 mA |
16777216 words |
3 |
3/3.3 |
4 |
SMALL OUTLINE |
SOP8,.3 |
2 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
16MX4 |
16M |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-G8 |
3.6 V |
2.16 mm |
100000 Write/Erase Cycles |
104 MHz |
5.23 mm |
Not Qualified |
5 ms |
SPI |
67108864 bit |
2.7 V |
ALSO CONFIGURABLE AS 64M X 1, 20 YEAR DATA RETENTION |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.00002 Amp |
5.28 mm |
3 |
||||||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
4194304 words |
1.8 |
4 |
SMALL OUTLINE |
2 |
1.27 mm |
85 Cel |
4MX4 |
4M |
-40 Cel |
DUAL |
R-PDSO-G8 |
3.6 V |
2.16 mm |
80 MHz |
5.23 mm |
16777216 bit |
1.65 V |
IT IS ALSO CONFIGURED AS 16M X 1 |
5.28 mm |
3 |
||||||||||||||||||||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
524288 words |
1.8 |
4 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
2 |
.5 mm |
85 Cel |
512KX4 |
512K |
-40 Cel |
DUAL |
R-PDSO-N8 |
3.6 V |
.6 mm |
80 MHz |
2 mm |
2097152 bit |
1.65 V |
IT IS ALSO CONFIGURED AS 2M X 1 |
NOT SPECIFIED |
NOT SPECIFIED |
3 mm |
3 |
||||||||||||||||||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
6 mA |
4194304 words |
1.8 |
8 |
SMALL OUTLINE |
SOP8,.3 |
2 |
20 |
1.27 mm |
85 Cel |
3-STATE |
4MX8 |
4M |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-G8 |
3.6 V |
1.75 mm |
100000 Write/Erase Cycles |
80 MHz |
5.23 mm |
SPI |
33554432 bit |
1.65 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.000024 Amp |
5.28 mm |
1.8 |
||||||||||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
1048576 words |
1.8 |
4 |
SMALL OUTLINE |
2 |
1.27 mm |
85 Cel |
1MX4 |
1M |
-40 Cel |
TIN |
DUAL |
R-PDSO-G8 |
3.6 V |
1.75 mm |
104 MHz |
3.9 mm |
4194304 bit |
1.65 V |
IT IS ALSO CONFIGURED AS 4M X 1 |
e3 |
4.9 mm |
3 |
||||||||||||||||||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
1048576 words |
1.8 |
4 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
2 |
.5 mm |
85 Cel |
1MX4 |
1M |
-40 Cel |
DUAL |
R-PDSO-N8 |
3.6 V |
.6 mm |
104 MHz |
2 mm |
4194304 bit |
1.65 V |
IT IS ALSO CONFIGURED AS 4M X 1 |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
3 mm |
3 |
|||||||||||||||||||||||||||||||
Macronix |
FLASH |
1.8 |
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
20 mA |
33554432 words |
1.8 |
1.8 |
4 |
SMALL OUTLINE |
SOP16,.4 |
2 |
Flash Memories |
10 |
1.27 mm |
85 Cel |
32MX4 |
32M |
-40 Cel |
MATTE TIN |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-G16 |
3 |
2 V |
2.65 mm |
100000 Write/Erase Cycles |
104 MHz |
7.52 mm |
Not Qualified |
SPI |
134217728 bit |
1.65 V |
CAN BE ORGANISED AS 128 MBIT X 1 |
e3 |
NOR TYPE |
.00002 Amp |
10.3 mm |
1.8 |
||||||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
15 mA |
2097152 words |
3 |
8 |
SMALL OUTLINE |
SOP8,.3 |
2 |
20 |
1.27 mm |
85 Cel |
3-STATE |
2MX8 |
2M |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-G8 |
3.6 V |
2.16 mm |
100000 Write/Erase Cycles |
80 MHz |
5.23 mm |
SPI |
16777216 bit |
2.7 V |
ALSO AVAILABLE WITH 2.3VMIN@50MHZ |
NOR TYPE |
.00002 Amp |
5.28 mm |
3 |
|||||||||||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
15 mA |
262144 words |
3 |
8 |
SMALL OUTLINE |
SOP8,.25 |
20 |
1.27 mm |
85 Cel |
3-STATE |
256KX8 |
256K |
-40 Cel |
DUAL |
HARDWARE |
R-PDSO-G8 |
3.6 V |
1.75 mm |
100000 Write/Erase Cycles |
80 MHz |
3.9 mm |
SPI |
2097152 bit |
2.7 V |
ALSO AVAILABLE WITH 2.3VMIN@50MHZ |
NOR TYPE |
.00002 Amp |
4.9 mm |
3 |
||||||||||||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
44 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16K,8K,32K,64K |
50 mA |
524288 words |
5 |
YES |
5 |
16 |
SMALL OUTLINE |
SOP44,.63 |
8 |
Flash Memories |
1.27 mm |
85 Cel |
512KX16 |
512K |
-40 Cel |
1,2,1,15 |
YES |
TIN |
YES |
DUAL |
R-PDSO-G44 |
5.5 V |
3 mm |
100000 Write/Erase Cycles |
12.6 mm |
Not Qualified |
BOTTOM |
8388608 bit |
4.5 V |
BOTTOM BOOT BLOCK |
e3 |
NOR TYPE |
.00005 Amp |
28.5 mm |
70 ns |
5 |
YES |
|||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
8 |
.5 mm |
85 Cel |
512KX16 |
512K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G48 |
3 |
5.5 V |
1.2 mm |
12 mm |
BOTTOM |
8388608 bit |
4.5 V |
BOTTOM BOOT BLOCK |
e3 |
NOR TYPE |
18.4 mm |
70 ns |
5 |
|||||||||||||||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
8K,64K |
100 mA |
2097152 words |
3 |
YES |
3/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.8,20 |
8 |
Flash Memories |
.5 mm |
85 Cel |
2MX16 |
2M |
-40 Cel |
8,63 |
YES |
TIN |
YES |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
BOTTOM |
33554432 bit |
2.7 V |
BOTTOM BOOT BLOCK |
8/16 |
e3 |
NOR TYPE |
.0001 Amp |
18.4 mm |
YES |
70 ns |
3 |
YES |
||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
8K,64K |
30 mA |
2097152 words |
3 |
YES |
3/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.8,20 |
8 |
Flash Memories |
.5 mm |
85 Cel |
2MX16 |
2M |
-40 Cel |
8,63 |
YES |
YES |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
BOTTOM |
33554432 bit |
2.7 V |
BOTTOM BOOT BLOCK |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.000015 Amp |
18.4 mm |
YES |
70 ns |
3 |
YES |
|||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4194304 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
8 |
.5 mm |
85 Cel |
4MX16 |
4M |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
TOP |
67108864 bit |
2.7 V |
TOP BOOT BLOCK |
e3 |
18.4 mm |
70 ns |
3 |
||||||||||||||||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
48 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
128K |
30 mA |
134217728 words |
3.3 |
NO |
3/3.3 |
8 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP48,.8,20 |
Flash Memories |
.5 mm |
85 Cel |
128MX8 |
128M |
-40 Cel |
1K |
YES |
MATTE TIN |
YES |
DUAL |
R-PDSO-G48 |
3 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
1073741824 bit |
2.7 V |
2K |
e3 |
30 |
260 |
SLC NAND TYPE |
.00005 Amp |
18.4 mm |
25 ns |
3.3 |
NO |
|||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
30 mA |
268435456 words |
3 |
3/3.3 |
8 |
SMALL OUTLINE |
SOP16,.4 |
Flash Memories |
10 |
1.27 mm |
85 Cel |
3-STATE |
256MX8 |
256M |
-40 Cel |
MATTE TIN |
DUAL |
HARDWARE |
R-PDSO-G16 |
3 |
3.6 V |
2.65 mm |
100000 Write/Erase Cycles |
104 MHz |
7.52 mm |
Not Qualified |
SPI |
2147483648 bit |
2.7 V |
e3 |
SLC NAND TYPE |
.00005 Amp |
10.3 mm |
3 |
|||||||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
25 mA |
33554432 words |
3 |
3/3.3 |
4 |
SMALL OUTLINE |
SOP16,.4 |
2 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
32MX4 |
32M |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-G16 |
3.6 V |
2.65 mm |
100000 Write/Erase Cycles |
104 MHz |
7.52 mm |
Not Qualified |
5 ms |
SPI |
134217728 bit |
2.7 V |
ALSO CONFIGURABLE AS 128M X 1, 20 YEAR DATA RETENTION |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.00004 Amp |
10.3 mm |
3 |
||||||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
25 mA |
16777216 words |
3.3 |
3/3.3 |
2 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.25 |
1 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
16MX2 |
16M |
-40 Cel |
MATTE TIN |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
3 |
3.6 V |
.8 mm |
100000 Write/Erase Cycles |
86 MHz |
5 mm |
Not Qualified |
SPI |
33554432 bit |
2.7 V |
e3 |
NOR TYPE |
.00002 Amp |
6 mm |
3.3 |
|||||||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
17 mA |
4194304 words |
3 |
8 |
SMALL OUTLINE |
SOP16,.4 |
4 |
20 |
1.27 mm |
85 Cel |
3-STATE |
4MX8 |
4M |
-40 Cel |
TIN |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-G16 |
3.6 V |
2.65 mm |
100000 Write/Erase Cycles |
133 MHz |
7.52 mm |
SPI |
33554432 bit |
2.65 V |
ALSO ORGANISED AS 32MX1 |
e3 |
NOR TYPE |
.00005 Amp |
10.3 mm |
3 |
|||||||||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
23 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
SERIAL |
SYNCHRONOUS |
33554432 words |
1.8 |
4 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
2 |
.5 mm |
85 Cel |
32MX4 |
32M |
-40 Cel |
BOTTOM |
R-PBGA-B23 |
2 V |
.52 mm |
104 MHz |
134217728 bit |
1.65 V |
IT CAN ALSO BE CONFIGURABLE AS 128MX1 |
NOT SPECIFIED |
NOT SPECIFIED |
1.8 |
||||||||||||||||||||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
24 |
TBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
SERIAL |
SYNCHRONOUS |
33554432 words |
1.8 |
4 |
GRID ARRAY, THIN PROFILE |
2 |
1 mm |
85 Cel |
32MX4 |
32M |
-40 Cel |
BOTTOM |
R-PBGA-B24 |
2 V |
1.2 mm |
104 MHz |
6 mm |
134217728 bit |
1.65 V |
IT CAN ALSO BE CONFIGURABLE AS 128MX1 |
NOT SPECIFIED |
NOT SPECIFIED |
8 mm |
1.8 |
||||||||||||||||||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
8 |
VSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
27 mA |
33554432 words |
1.8 |
1.8 |
4 |
SMALL OUTLINE, VERY THIN PROFILE |
SOLCC8,.25 |
2 |
Flash Memories |
10 |
1.27 mm |
85 Cel |
32MX4 |
32M |
-40 Cel |
MATTE TIN |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
3 |
2 V |
.8 mm |
100000 Write/Erase Cycles |
133 MHz |
5 mm |
Not Qualified |
SPI |
134217728 bit |
1.65 V |
ALSO CONFIGURABLE AS 128M X 1 |
e3 |
NOR TYPE |
.00002 Amp |
6 mm |
1.8 |
||||||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
25 mA |
16777216 words |
1.8 |
8 |
SMALL OUTLINE |
SOP8,.3 |
4 |
20 |
1.27 mm |
85 Cel |
3-STATE |
16MX8 |
16M |
-40 Cel |
DUAL |
HARDWARE |
R-PDSO-G8 |
2 V |
2.16 mm |
100000 Write/Erase Cycles |
133 MHz |
5.23 mm |
SPI |
134217728 bit |
1.65 V |
IT ALSO CAN BE CONFIGURED AS 64M X 2 |
NOR TYPE |
.000005 Amp |
5.28 mm |
1.8 |
|||||||||||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
12 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
SERIAL |
SYNCHRONOUS |
8388608 words |
1.8 |
4 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
2 |
.5 mm |
85 Cel |
8MX4 |
8M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B12 |
3 |
2 V |
.48 mm |
104 MHz |
33554432 bit |
1.65 V |
ALSO IT CAN BE CONFIGURED AS 32M X 1 BIT |
e1 |
1.8 |
|||||||||||||||||||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
8388608 words |
1.8 |
8 |
SMALL OUTLINE |
4 |
1.27 mm |
85 Cel |
8MX8 |
8M |
-40 Cel |
DUAL |
R-PDSO-G8 |
2 V |
2.16 mm |
133 MHz |
5.23 mm |
67108864 bit |
1.65 V |
32M X 2BIT |
NOT SPECIFIED |
NOT SPECIFIED |
5.28 mm |
1.8 |
||||||||||||||||||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
1048576 words |
1.8 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
4 |
.5 mm |
85 Cel |
1MX8 |
1M |
-40 Cel |
DUAL |
R-PDSO-N8 |
2 V |
.6 mm |
108 MHz |
2 mm |
8388608 bit |
1.65 V |
IT CAN ALSO BE CONFIGURED AS 4M X 2 AND 8M X 1 |
NOT SPECIFIED |
NOT SPECIFIED |
3 mm |
1.8 |
||||||||||||||||||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16K,8K,32K,64K |
30 mA |
4194304 words |
3 |
YES |
3/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.8,20 |
8 |
Flash Memories |
.5 mm |
85 Cel |
4MX16 |
4M |
-40 Cel |
1,2,1,7 |
YES |
Tin (Sn) |
YES |
DUAL |
R-PDSO-G48 |
3 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
BOTTOM |
67108864 bit |
2.7 V |
e3 |
NOR TYPE |
.000005 Amp |
18.4 mm |
YES |
70 ns |
3 |
YES |
|||||||||||||||||
|
Macronix |
FLASH |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
128K |
50 mA |
134217728 words |
3 |
NO |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.8,20 |
10 |
.5 mm |
85 Cel |
3-STATE |
128MX8 |
128M |
-40 Cel |
1K |
NO |
YES |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
60000 Write/Erase Cycles |
12 mm |
.00002 ms |
1073741824 bit |
2.7 V |
2K |
SLC NAND TYPE |
.00005 Amp |
18.4 mm |
3 |
NO |
|||||||||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
8 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
25 mA |
2097152 words |
3 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.15,32 |
1 |
20 |
.8 mm |
85 Cel |
2MX8 |
2M |
-40 Cel |
MATTE TIN |
DUAL |
HARDWARE/SOFTWARE |
S-PDSO-N8 |
3 |
3.6 V |
.6 mm |
100000 Write/Erase Cycles |
86 MHz |
4 mm |
SPI |
16777216 bit |
2.7 V |
e3 |
40 |
260 |
NOR TYPE |
.00002 Amp |
4 mm |
3 |
||||||||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
2097152 words |
1.8 |
4 |
SMALL OUTLINE |
2 |
1.27 mm |
85 Cel |
2MX4 |
2M |
-40 Cel |
DUAL |
R-PDSO-G8 |
3.6 V |
2.16 mm |
104 MHz |
5.23 mm |
8388608 bit |
1.65 V |
IT IS ALSO CONFIGURED AS 8M X 1 |
NOT SPECIFIED |
NOT SPECIFIED |
5.28 mm |
1.8 |
||||||||||||||||||||||||||||||||
|
Macronix |
FLASH |
INDUSTRIAL |
8 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
SERIAL |
SYNCHRONOUS |
25 mA |
8388608 words |
1.8 |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA14,4X6,20 |
2 |
20 |
.5 mm |
85 Cel |
8MX8 |
8M |
-40 Cel |
BOTTOM |
HARDWARE/SOFTWARE |
R-PBGA-B14 |
2 V |
.45 mm |
133 MHz |
67108864 bit |
1.65 V |
64MX1BIT |
NOR TYPE |
.000005 Amp |
1.8 |
Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.
Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.
There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.
Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.