Macronix Flash Memory 227

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MX25R8035FZUIH1	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			2097152 words	1.8			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.5 mm	85 Cel		2MX4	2M	-40 Cel					DUAL		R-PDSO-N8		3.6 V	.6 mm		104 MHz	2 mm					8388608 bit	1.65 V	IT IS ALSO CONFIGURED AS 8M X 1		NOT SPECIFIED	NOT SPECIFIED			3 mm			1.8
MX25U12843GBBI00	Macronix	FLASH
MX29LV040CQI-90G	Macronix	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	30 mA	524288 words	3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel		512KX8	512K	-40 Cel	8	YES	Tin (Sn)		QUAD		R-PQCC-J32		3.6 V	3.55 mm			11.43 mm	Not Qualified				4194304 bit	2.7 V		e3			NOR TYPE	.000005 Amp	14.05 mm	YES	90 ns	3	YES
MX66L1G45GXDI-08G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			268435456 words	3			4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		256MX4	256M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		166 MHz	6 mm					1073741824 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 1G X 1 BIT		NOT SPECIFIED	NOT SPECIFIED			8 mm			3
MX25L25635FZ2I-10GTR	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			67108864 words	3			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		64MX4	64M	-40 Cel					DUAL		R-PDSO-N8		3.6 V	.8 mm		104 MHz	6 mm					268435456 bit	2.7 V	ALSO HAVING 1-BIT MEMORY WIDTH						8 mm			3
MX25L25735FMI-10G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		25 mA	67108864 words	3		3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel		64MX4	64M	-40 Cel			TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.52 mm	Not Qualified		SPI		268435456 bit	2.7 V	CAN BE ORGNISED AS 256 MBIT X 1	e3			NOR TYPE	.00002 Amp	10.3 mm			3
MX25L6433FXCI-08G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		17 mA	16777216 words	3			4	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	2		20	1 mm	85 Cel		16MX4	16M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		67108864 bit	2.65 V	ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT	e1	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	8 mm			3
MX25L6433FZNI-08Q	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		17 mA	8388608 words	3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	2		20	1.27 mm	85 Cel		8MX8	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI		67108864 bit	2.65 V	ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	6 mm			3.3
MX25U2033EM1I-12G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		25 mA	536870912 words	1.8		1.8	4	SMALL OUTLINE	SOP8,.25	2	Flash Memories	20	1.27 mm	85 Cel		512MX4	512M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	2 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	3.9 mm	Not Qualified		SPI		2147483648 bit	1.65 V	CAN BE ORGANISED AS 2 MBIT X 1	e3			NOR TYPE	.000008 Amp	4.9 mm			1.8
MX25UM25645GMI00	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			33554432 words	1.8			8	SMALL OUTLINE		1			1.27 mm	85 Cel		32MX8	32M	-40 Cel					DUAL		R-PDSO-G16		2 V	2.65 mm		133 MHz	7.52 mm					268435456 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			10.3 mm			1.8
MX29F400CBTI-70G	Macronix	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	50 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	5.5 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified	70 ms		BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm		70 ns	5	YES
MX29LV800CBXEI-70G	Macronix	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		8MX16	8M	-40 Cel	1,2,1,15	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48		3.6 V	1.3 mm			6 mm	Not Qualified			BOTTOM	134217728 bit	2.7 V		e1			NOR TYPE	.000005 Amp	8 mm	YES	70 ns	3	YES
MX66L51235FMI-10G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		40 mA	134217728 words	3		3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel		128MX4	128M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.52 mm	Not Qualified		SPI		536870912 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 512M X 1 BIT	e3			NOR TYPE	.00004 Amp	10.3 mm			3
MX66L51235FXDI-10G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		40 mA	134217728 words	3		3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel		128MX4	128M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified		SPI		536870912 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 512M X 1 BIT		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00004 Amp	8 mm			3
MX25L3206EMI-12G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3.3		3/3.3	2	SMALL OUTLINE	SOP16,.4	1	Flash Memories	20	1.27 mm	85 Cel		16MX2	16M	-40 Cel			TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	86 MHz	7.52 mm	Not Qualified		SPI		33554432 bit	2.7 V		e3			NOR TYPE	.00002 Amp	10.3 mm			3.3
MX25L8006EM1J-12G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		20 mA	1048576 words	3			8	SMALL OUTLINE	SOP8,.25	1		20	1.27 mm	105 Cel		1MX8	1M	-40 Cel					DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm		86 MHz	3.9 mm			SPI		8388608 bit	2.7 V						.000025 Amp	4.9 mm			3
MX25R8035FBDIL0	Macronix	FLASH	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			2097152 words	1.8			4	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		2				85 Cel		2MX4	2M	-40 Cel					BOTTOM		R-PBGA-B8		3.6 V	.52 mm		104 MHz						8388608 bit	1.65 V	IT IS ALSO CONFIGURED AS 8M X 1		NOT SPECIFIED	NOT SPECIFIED						1.8
MX25U12832FZNJ02	Macronix	FLASH
MX25U25645GBFI00	Macronix
MX25U25645GMI00	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			33554432 words	1.8			8	SMALL OUTLINE		4			1.27 mm	85 Cel		32MX8	32M	-40 Cel					DUAL		R-PDSO-G16		2 V	2.65 mm		166 MHz	7.52 mm					268435456 bit	1.65 V	IT CAN ALSO BE CONFIGURED AS 128M X 2 AND 256M X 1						10.3 mm			1.8
MX25U51245GBFI0A	Macronix	FLASH		68	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		40 mA	67108864 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X10,20			20	.4 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B68		2 V	.44 mm	100000 Write/Erase Cycles	166 MHz				SPI		536870912 bit	1.65 V					NOR TYPE	.00005 Amp				1.8
MX25U51245GMI00	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		40 mA	67108864 words	1.8			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		2 V	2.65 mm	100000 Write/Erase Cycles	166 MHz	7.52 mm			SPI		536870912 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	10.3 mm			1.8
MX25UM51245GMI00	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			67108864 words	1.8			8	SMALL OUTLINE		1			1.27 mm	85 Cel		64MX8	64M	-40 Cel					DUAL		R-PDSO-G16		2 V	2.65 mm		133 MHz	7.52 mm					536870912 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			10.3 mm			1.8
MX25UM51245GXDIH0	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, THIN PROFILE		1			1 mm	85 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24		2 V	1.2 mm		250 MHz	6 mm					536870912 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm			1.8
MX25UM51345GBEI00	Macronix
MX25V1635FM2I/TR	Macronix	FLASH																																																			NOT SPECIFIED	NOT SPECIFIED						3
MX29F400CTTI-70G	Macronix	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	50 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	Tin (Sn)	YES	DUAL		R-PDSO-G48	3	5.5 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified	70 ms		TOP	4194304 bit	4.5 V	TOP BOOT BLOCK	e3			NOR TYPE	.000005 Amp	18.4 mm		70 ns	5	YES
MX25L12845GXDI-08G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			33554432 words	3			4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		32MX4	32M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		120 MHz	6 mm					134217728 bit	2.7 V	CAN BE ORGANISED AS 128 M X 1		NOT SPECIFIED	NOT SPECIFIED			8 mm			3
MX25L12845GZ2I-08G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			33554432 words	3			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		32MX4	32M	-40 Cel					DUAL		R-PDSO-N8		3.6 V	.8 mm		120 MHz	6 mm					134217728 bit	2.7 V	CAN BE ORGANISED AS 128 M X 1		NOT SPECIFIED	NOT SPECIFIED			8 mm			3
MX25L2006EM1I-12G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		20 mA	1048576 words	3		3/3.3	2	SMALL OUTLINE	SOP8,.25	1	Flash Memories	20	1.27 mm	85 Cel		1MX2	1M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	86 MHz	3.9 mm	Not Qualified		SPI		2097152 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	4.9 mm			2.7
MX25L25735FZ2I-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		25 mA	67108864 words	3		3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	2	Flash Memories	20	1.27 mm	85 Cel		64MX4	64M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified		SPI		268435456 bit	2.7 V	CAN BE ORGNISED AS 256 MBIT X 1		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	8 mm			3
MX25L32356M1I03	Macronix	FLASH		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		17 mA	4194304 words	3			8	SMALL OUTLINE	SOP8,.25	4		20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel					DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	133 MHz	3.9 mm			SPI		33554432 bit	2.65 V	16MX2BIT MEMORYCONFIGURATION IS ALSO AVAILABLE				NOR TYPE	.00002 Amp	4.9 mm			3
MX25L3235EZNI-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		35 mA	8388608 words	3.3		3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	2	Flash Memories	20	1.27 mm	85 Cel		8MX4	8M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified		SPI		33554432 bit	2.7 V	IT ALSO CONFIGURED AS 32M X 1	e3			NOR TYPE	.00004 Amp	6 mm			2.7
MX25L6433FM2J-08G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		25 mA	8388608 words	3			8	SMALL OUTLINE	SOP8,.3	4		20	1.27 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel					DUAL	HARDWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.23 mm			SPI		67108864 bit	2.65 V	32MX2BIT		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	5.28 mm			3
MX25L6435EXCI-10G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			16777216 words	3.3		3/3.3	4	GRID ARRAY, THIN PROFILE		2	Flash Memories	20	1 mm	85 Cel		16MX4	16M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified		SPI		67108864 bit	2.7 V	IT ALSO CONFIGURED AS 64M X 1		40	260	NOR TYPE		8 mm			2.7
MX25LM51245GMI00	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			67108864 words	3			8	SMALL OUTLINE		1			1.27 mm	85 Cel		64MX8	64M	-40 Cel					DUAL		R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.52 mm					536870912 bit	2.7 V							10.3 mm			3
MX25R4035FM1IL0/T&R	Macronix	FLASH																																TIN																										3
MX25U12832FMI02	Macronix	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	1.8			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		2 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.52 mm			SPI		134217728 bit	1.65 V					NOR TYPE	.000005 Amp	10.3 mm			1.8
MX25U12832FZ4I02	Macronix	FLASH		8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		25 mA	16777216 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	1.65 V					NOR TYPE	.000005 Amp	8 mm			1.8
MX25U25643GM2I00	Macronix	FLASH
MX25U51245GMI	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			134217728 words	1.8			4	SMALL OUTLINE		2			1.27 mm	85 Cel		128MX4	128M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G16	3	2 V	2.65 mm		133 MHz	7.52 mm					536870912 bit	1.7 V	ALSO IT CAN BE CONFIGURED AS 512M X 1 BIT	e3			NOR TYPE		10.3 mm			1.8
MX25U51245GMI00/TR	Macronix	FLASH																																																			NOT SPECIFIED	NOT SPECIFIED						1.8
MX25U51245GXDI0A	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		40 mA	67108864 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	166 MHz	6 mm			SPI		536870912 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	8 mm			1.8
MX25U51245GXDI54	Macronix	FLASH	INDUSTRIAL	24	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		35 mA	67108864 words	1.8			8	GRID ARRAY, LOW PROFILE	BGA24,5X5,40	4		20	1 mm	85 Cel		64MX8	64M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm			SPI		536870912 bit	1.65 V	IT CAN ALSO CONFIGURED AS 256M X 2 AND 512M X 1				NOR TYPE	.00018 Amp	8 mm			1.8
MX25V4035FZUITR	Macronix	FLASH																																																										3
MX29LV320ETTI-70G	Macronix	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	30 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin (Sn)	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			TOP	33554432 bit	2.7 V	TOP BOOT BLOCK	e3			NOR TYPE	.000015 Amp	18.4 mm	YES	70 ns	3	YES
MX25L12845GMI-10G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			4	SMALL OUTLINE		2			1.27 mm	85 Cel		32MX4	32M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G16	3	3.6 V	2.65 mm		104 MHz	7.52 mm					134217728 bit	2.7 V	CAN BE ORGANISED AS 128 MBIT X 1	e3					10.3 mm			3
MX25L12845GXCI-08G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			33554432 words	3			4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		32MX4	32M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		120 MHz	6 mm					134217728 bit	2.7 V	CAN BE ORGANISED AS 128 M X 1		NOT SPECIFIED	NOT SPECIFIED			8 mm			3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.