Macronix Flash Memory 227

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MX29LV160DTTI-70G	Macronix	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		TOP	16777216 bit	2.7 V	TOP BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000015 Amp	18.4 mm	YES	70 ns	3	YES
MX29LV640EBXEI-70G	Macronix	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH		8			.8 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B48		3.6 V	1.3 mm			6 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED			8 mm		70 ns	3
MX25U12832FZNI02	Macronix	FLASH		8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		25 mA	16777216 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm		SPI		134217728 bit	1.65 V						NOR TYPE	.000005 Amp	6 mm			1.8
MX66L1G45GXDI-10G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			268435456 words	3			4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		256MX4	256M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		104 MHz	6 mm				1073741824 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 1G X 1 BIT		e1					8 mm			2.7
MX66U2G45GXRI00	Macronix	FLASH	INDUSTRIAL	24	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			8	GRID ARRAY, LOW PROFILE		4			1 mm	85 Cel		256MX8	256M	-40 Cel					BOTTOM		R-PBGA-B24		2 V	1.3 mm		133 MHz	8 mm				2147483648 bit	1.65 V	IT CAN ALSO CONFIGURED AS 1G X 2 AND 2G X 1							6 mm			1.8
MX25R3235FBDIL0	Macronix	FLASH	INDUSTRIAL	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		6 mA	4194304 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA12,5X7,14/8	2		20	.35 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B12		3.6 V	.52 mm	100000 Write/Erase Cycles	80 MHz			SPI		33554432 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000024 Amp				1.8
MX25U12835FZNI-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		20 mA	33554432 words	1.8		1.8	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	2	Flash Memories	10	1.27 mm	85 Cel		32MX4	32M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified	SPI		134217728 bit	1.65 V	CAN BE ORGANISED AS 128 MBIT X 1		e3			NOR TYPE	.00002 Amp	6 mm			1.8
MX66L51235FZ2I-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		40 mA	134217728 words	3		3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	2	Flash Memories	20	1.27 mm	85 Cel		128MX4	128M	-40 Cel			TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified	SPI		536870912 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 512M X 1 BIT		e3			NOR TYPE	.00004 Amp	8 mm			3
MX25L6406EZNI-12G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		25 mA	8388608 words	3.3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	1	Flash Memories	20	1.27 mm	85 Cel		8MX8	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	86 MHz	6 mm	Not Qualified	SPI		67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	8 mm			3.3
MX25L6433FZ2I-08G	Macronix	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		17 mA	8388608 words	3.3			8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.3	2		20	1.27 mm	85 Cel		8MX8	8M	-40 Cel			TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		67108864 bit	2.65 V	ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT		e3			NOR TYPE	.00002 Amp	8 mm			3.3
MX25LM25645GXDI00	Macronix
MX25U12832FM2I02	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	1.8			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.23 mm		SPI		134217728 bit	1.65 V						NOR TYPE	.000005 Amp	5.28 mm			1.8
MX29F040CQC-70G	Macronix	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	50 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel		512KX8	512K	0 Cel	8	YES	Tin (Sn)		QUAD		R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			4194304 bit	4.5 V			e3	40	260	NOR TYPE	.000005 Amp	14.05 mm		70 ns	5	YES
MX29F040CTI-70G	Macronix	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	50 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel		512KX8	512K	-40 Cel	8	YES	Tin/Bismuth (Sn/Bi)		DUAL		R-PDSO-G32	3	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			4194304 bit	4.5 V			e6	40	260	NOR TYPE	.000005 Amp	18.4 mm		70 ns	5	YES
MX29LV320EBXEI-70G	Macronix	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	30 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM		R-PBGA-B48		3.6 V	1.3 mm			6 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e1	10	260	NOR TYPE	.000015 Amp	8 mm	YES	70 ns	3	YES
MX25L12835FMI-10GTUBE	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			4	SMALL OUTLINE		2			1.27 mm	85 Cel		32MX4	32M	-40 Cel					DUAL		R-PDSO-G16		3.6 V	2.65 mm		104 MHz	7.52 mm				134217728 bit	2.7 V	ALSO HAVING 1-BIT MEMORY WIDTH			NOT SPECIFIED	NOT SPECIFIED			10.3 mm			3
MX25R3235FM2IH0	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		6 mA	4194304 words	1.8			8	SMALL OUTLINE	SOP8,.3	2		20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	5.23 mm		SPI		33554432 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000024 Amp	5.28 mm			1.8
MX25R8035FM1IL0	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			2097152 words	1.8			4	SMALL OUTLINE		2			1.27 mm	85 Cel		2MX4	2M	-40 Cel					DUAL		R-PDSO-G8		3.6 V	1.75 mm		104 MHz	3.9 mm				8388608 bit	1.65 V	IT IS ALSO CONFIGURED AS 8M X 1			NOT SPECIFIED	NOT SPECIFIED			4.9 mm			1.8
MX25L1606EZNI-12G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		25 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	1	Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel			TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	86 MHz	5 mm	Not Qualified	SPI		16777216 bit	2.7 V			e3			NOR TYPE	.00002 Amp	6 mm			3
MX25L6433FMI-08Q	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		17 mA	8388608 words	3.3			8	SMALL OUTLINE	SOP16,.4	2		20	1.27 mm	85 Cel		8MX8	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.52 mm		SPI		67108864 bit	2.65 V	ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	10.3 mm			3.3
MX25R1635FZNIH0	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			4194304 words	1.8			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		4MX4	4M	-40 Cel					DUAL		R-PDSO-N8		3.6 V	.8 mm		80 MHz	5 mm				16777216 bit	1.65 V	IT IS ALSO CONFIGURED AS 16M X 1			NOT SPECIFIED	NOT SPECIFIED			6 mm			3
MX25U25645GXDI00	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY, THIN PROFILE		4			1 mm	85 Cel		32MX8	32M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm				268435456 bit	1.65 V	IT CAN ALSO BE CONFIGURED AS 128M X 2 AND 256M X 1		e1					8 mm			1.8
MX25U6432FZBI02	Macronix	FLASH	INDUSTRIAL	8	HSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		25 mA	8388608 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG	SOLCC8,.12,32	2		20	.8 mm	85 Cel		8MX8	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		2 V	.6 mm		133 MHz	3 mm				67108864 bit	1.65 V	64MX1BIT					NOR TYPE	.000005 Amp	4 mm			1.8
MX25V1635FZNI	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			4194304 words	3			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		4MX4	4M	-40 Cel					DUAL		R-PDSO-N8		3.6 V	.8 mm		80 MHz	5 mm				16777216 bit	2.3 V	ALSO IT CAN BE CONFIGURED AS 16M X 1 BIT			NOT SPECIFIED	NOT SPECIFIED			6 mm			3
MX29F800CBTI-70G	Macronix	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	50 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	Matte Tin (Sn)	YES	DUAL		R-PDSO-G48	3	5.5 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.00005 Amp	18.4 mm		70 ns	5	YES
MX25L1606EM1S-12G	Macronix	FLASH		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		25 mA	2097152 words	3			8	SMALL OUTLINE	SOP8,.25	1		20	1.27 mm			2MX8	2M						DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	86 MHz	3.9 mm		SPI		16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	4.9 mm			3
MX25U3235FZNI-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		25 mA	8388608 words	1.8		1.8	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	2	Flash Memories	10	1.27 mm	85 Cel		8MX4	8M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified	SPI		33554432 bit	1.65 V	CAN BE ORGANISED AS 32 MBIT X 1		e3			NOR TYPE	.00002 Amp	6 mm			1.8
MX25U51245GZ4I54	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			67108864 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		4			1.27 mm	85 Cel		64MX8	64M	-40 Cel			Tin (Sn)		DUAL		R-PDSO-N8		2 V	.8 mm		166 MHz	6 mm				536870912 bit	1.65 V	IT CAN ALSO CONFIGURED AS 256M X 2 AND 512M X 1		e3					8 mm			1.8
MX25U6432FZNI02	Macronix	FLASH	INDUSTRIAL	8	HSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		25 mA	8388608 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG	SOLCC8,.25	2		20	1.27 mm	85 Cel		8MX8	8M	-40 Cel			Tin (Sn)		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		2 V	.8 mm		133 MHz	5 mm				67108864 bit	1.65 V	64MX1BIT		e3			NOR TYPE	.000005 Amp	6 mm			1.8
MX25V4035FZUI	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			1048576 words	3			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		1MX4	1M	-40 Cel					DUAL		R-PDSO-N8		3.6 V	.8 mm		108 MHz	5 mm				4194304 bit	2.3 V	ALSO IT CAN BE CONFIGURED AS 4M X 1 BIT			NOT SPECIFIED	NOT SPECIFIED			6 mm			3
MX29GL128FHXFI-70G	Macronix	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm	Not Qualified			134217728 bit	2.7 V		8/16		40	260	NOR TYPE	.00003 Amp	13 mm	YES	70 ns	3	YES
MX29LV640EBTI-70G	Macronix	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	85 Cel		4MX16	4M	-40 Cel			Tin (Sn)		DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK		e3					18.4 mm		70 ns	3
MX30LF1G18AC-TI	Macronix	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		128KX8	128K	-40 Cel			TIN		DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm				1048576 bit	2.7 V			e3			SLC NAND TYPE		18.4 mm			3
MX25L12833FZ2I-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	4		20	1.27 mm	85 Cel		16MX8	16M	-40 Cel			TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		134217728 bit	2.7 V	IT CAN ALSO BE CONFIGURED AS 64M X 2 AND 128M X 1		e3			NOR TYPE	.00005 Amp	8 mm			3
MX25L12872FM2I-10G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			16777216 words	3			8	SMALL OUTLINE		4			1.27 mm	85 Cel		16MX8	16M	-40 Cel					DUAL		R-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.23 mm				134217728 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 64M X 2 AND 128M X 1			NOT SPECIFIED	NOT SPECIFIED			5.28 mm			3
MX25L25645GZ2I-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		25 mA	33554432 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-XDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	120 MHz	6 mm		SPI		268435456 bit	2.7 V			e3			NOR TYPE	.00002 Amp	8 mm			3
MX25L3233FZBI-08Q	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		17 mA	4194304 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,32	4		20	.8 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	133 MHz	3 mm		SPI		33554432 bit	2.65 V	ALSO ORGANISED AS 32MX1			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	4 mm			3
MX25L3233FZBI-08QTR	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		17 mA	4194304 words	3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,32	4		20	.8 mm	85 Cel		4MX8	4M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	133 MHz	3 mm		SPI		33554432 bit	2.65 V	16MX2BIT MEMORYCONFIGURATION IS ALSO AVAILABLE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	4 mm			3.3
MX25LM51245GMI00/TR	Macronix	FLASH																																																			NOT SPECIFIED	NOT SPECIFIED						3
MX25U6435FZNI-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		25 mA	16777216 words	1.8		1.8	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	2	Flash Memories	10	1.27 mm	85 Cel		16MX4	16M	-40 Cel			TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified	SPI		67108864 bit	1.65 V	CAN BE ORGANISED AS 64 MBIT X 1		e3			NOR TYPE	.00002 Amp	6 mm			1.8
MX29GL128FHT2I-70G	Macronix	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	MATTE TIN	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm			14 mm	Not Qualified			134217728 bit	2.7 V		8/16	e3			NOR TYPE	.00003 Amp	18.4 mm	YES	70 ns	3	YES
MX25L1606EXCI-12G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		25 mA	2097152 words	3		3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1	Flash Memories	20	1 mm	85 Cel		2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	86 MHz	6 mm	Not Qualified	SPI		16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	8 mm			3
MX25UM51245GXDI00	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, THIN PROFILE		1			1 mm	85 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24		2 V	1.2 mm		200 MHz	6 mm				536870912 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			1.8
MX25L25645GM2I-10G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		25 mA	33554432 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	120 MHz	5.23 mm		SPI		268435456 bit	2.7 V			e3			NOR TYPE	.00002 Amp	5.28 mm			3
MX29GL128FHXFI-70GTR	Macronix	FLASH																																																										3
MX29LV040CQI-70G	Macronix	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	30 mA	524288 words	3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel		512KX8	512K	-40 Cel	8	YES	Tin (Sn)		QUAD		R-PQCC-J32	3	3.6 V	3.55 mm			11.43 mm	Not Qualified			4194304 bit	2.7 V			e3	40	260	NOR TYPE	.000005 Amp	14.05 mm	YES	70 ns	3	YES
MX25L51245GXDI-10G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			134217728 words	3			4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		128MX4	128M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		104 MHz	6 mm				536870912 bit	2.7 V	CAN BE ORGNISED AS 512 MBIT X 1			NOT SPECIFIED	NOT SPECIFIED			8 mm			2.7
MX25L25635FZ2I-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		20 mA	67108864 words	3		3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	2	Flash Memories	10	1.27 mm	85 Cel		64MX4	64M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified	SPI		268435456 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1		e3			NOR TYPE	.00002 Amp	8 mm			3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.