8 Other Function Memory ICs 385

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length	Maximum Access Time
ST25DV16K-JFR6S3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	16384 words	3.3	1	SMALL OUTLINE		1.27 mm	85 Cel	16KX1	16K	-40 Cel		DUAL	R-PDSO-G8		5.5 V	1.75 mm	3.9 mm	16384 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	4.9 mm
ST25DV04K-JFR6C3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS	4096 words	3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		.5 mm	85 Cel	4KX1	4K	-40 Cel		DUAL	R-PDSO-N8		5.5 V	.6 mm	2 mm	4096 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	3 mm
M24SR04-YMF5/2	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS	4096 words	3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		.5 mm	80 Cel	4KX1	4K	-25 Cel		DUAL	R-PDSO-N8		5.5 V	.8 mm	2 mm	4096 bit	2.7 V				3 mm
M24SR04-GMC5/2	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS	4096 words	3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		.5 mm	80 Cel	4KX1	4K	-25 Cel		DUAL	R-PDSO-N8		5.5 V	.6 mm	2 mm	4096 bit	2.4 V				3 mm
M24SR02-YMN7T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	256 words	3.3	8	SMALL OUTLINE		1.27 mm	85 Cel	256X8	256	-40 Cel		DUAL	R-PDSO-G8		5.5 V	1.75 mm	3.9 mm	2048 bit	2.7 V				4.9 mm
M24SR64-YMF6T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS	8192 words	3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		.5 mm	85 Cel	8KX8	8K	-40 Cel		DUAL	R-PDSO-N8		5.5 V	.8 mm	2 mm	65536 bit	2.7 V				3 mm
M24SR16-YMF7T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS	2048 words	3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		.5 mm	85 Cel	2KX8	2K	-40 Cel		DUAL	R-PDSO-N8		5.5 V	.8 mm	2 mm	16384 bit	2.7 V				3 mm
M24SR04-YMN6/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	4096 words	3.3	1	SMALL OUTLINE		1.27 mm	85 Cel	4KX1	4K	-40 Cel		DUAL	R-PDSO-G8		5.5 V	1.75 mm	3.9 mm	4096 bit	2.7 V				4.9 mm
M24SR04-GDW5T/2	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	524288 words	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		.65 mm	80 Cel	512KX8	512K	-25 Cel		DUAL	R-PDSO-G8		5.5 V	1.2 mm	3 mm	4194304 bit	2.4 V				4.4 mm
M24SR04-GMF5/2	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS	4096 words	3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		.5 mm	80 Cel	4KX1	4K	-25 Cel		DUAL	R-PDSO-N8		5.5 V	.8 mm	2 mm	4096 bit	2.4 V				3 mm
M24SR16-YMN7T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	2048 words	3.3	8	SMALL OUTLINE		1.27 mm	85 Cel	2KX8	2K	-40 Cel		DUAL	R-PDSO-G8		5.5 V	1.75 mm	3.9 mm	16384 bit	2.7 V				4.9 mm
M24SR04-YMN5T/2	STMicroelectronics	MEMORY CIRCUIT	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS	512 words	3.3	8	SMALL OUTLINE		1.27 mm	85 Cel	512X8	512	-25 Cel		DUAL	R-PDSO-G8		5.5 V	1.75 mm	3.9 mm	4096 bit	2.7 V				4.9 mm
M24SR04-YDW5T/2	STMicroelectronics	MEMORY CIRCUIT	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS	512 words	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		.65 mm	85 Cel	512X8	512	-25 Cel		DUAL	R-PDSO-G8		5.5 V	1.2 mm	3 mm	4096 bit	2.7 V				4.4 mm
M24SR04-YDW6/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	4096 words	3.3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		.65 mm	85 Cel	4KX1	4K	-40 Cel		DUAL	R-PDSO-G8		5.5 V	1.2 mm	3 mm	4096 bit	2.7 V				4.4 mm
M24SR04-YMF6/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS	4096 words	3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		.5 mm	85 Cel	4KX1	4K	-40 Cel		DUAL	R-PDSO-N8		5.5 V	.8 mm	2 mm	4096 bit	2.7 V				3 mm
M24SR04-YMF7/2	STMicroelectronics	MEMORY CIRCUIT		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS	4096 words	3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		.5 mm		4KX1	4K			DUAL	R-PDSO-N8		5.5 V	.8 mm	2 mm	4096 bit	2.7 V				3 mm
ST25DV04K-JFR6T3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	4096 words	3.3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		.65 mm	85 Cel	4KX1	4K	-40 Cel		DUAL	R-PDSO-G8		5.5 V	1.2 mm	3 mm	4096 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	4.4 mm
M24SR04-YMC7T/2	STMicroelectronics	MEMORY CIRCUIT		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	512 words	3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		.5 mm		512X8	512			DUAL	R-PDSO-N8		5.5 V	.6 mm	2 mm	4096 bit	2.7 V				3 mm
ST25DV64K-JFR6S3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	65536 words	3.3	1	SMALL OUTLINE		1.27 mm	85 Cel	64KX1	64K	-40 Cel		DUAL	R-PDSO-G8		5.5 V	1.75 mm	3.9 mm	65536 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	4.9 mm
M24SR04-YMF5T/2	STMicroelectronics	MEMORY CIRCUIT	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	512 words	3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		.5 mm	85 Cel	512X8	512	-25 Cel		DUAL	R-PDSO-N8		5.5 V	.8 mm	2 mm	4096 bit	2.7 V				3 mm
M24SR04-GMN5T/2	STMicroelectronics	CRYPTORF MEMORY	COMMERCIAL EXTENDED	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	524288 words	3.3	8	SMALL OUTLINE	SOP8,.25	1.27 mm	80 Cel	512KX8	512K	-25 Cel		DUAL	R-PDSO-G8		5.5 V	1.75 mm	3.9 mm	4194304 bit	2.4 V				4.9 mm	900 ns
M24SR02-YMC7T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS	256 words	3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		.5 mm	85 Cel	256X8	256	-40 Cel		DUAL	R-PDSO-N8		5.5 V	.6 mm	2 mm	2048 bit	2.7 V				3 mm
M24SR04-YMN7/2	STMicroelectronics	MEMORY CIRCUIT		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	4096 words	3.3	1	SMALL OUTLINE		1.27 mm		4KX1	4K			DUAL	R-PDSO-G8		5.5 V	1.75 mm	3.9 mm	4096 bit	2.7 V				4.9 mm
ST25DV64K-IER6C3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS	65536 words	3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		.5 mm	85 Cel	64KX1	64K	-40 Cel		DUAL	R-PDSO-N8		5.5 V	.6 mm	2 mm	65536 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	3 mm
ST25DV16K-IER6C3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS	16384 words	3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		.5 mm	85 Cel	16KX1	16K	-40 Cel		DUAL	R-PDSO-N8		5.5 V	.6 mm	2 mm	16384 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	3 mm
M24SR04-GMN5/2	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	4096 words	3.3	1	SMALL OUTLINE		1.27 mm	80 Cel	4KX1	4K	-25 Cel		DUAL	R-PDSO-G8		5.5 V	1.75 mm	3.9 mm	4096 bit	2.4 V				4.9 mm
M24SR16-YDW7T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	2048 words	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		.65 mm	85 Cel	2KX8	2K	-40 Cel		DUAL	R-PDSO-G8		5.5 V	1.2 mm	3 mm	16384 bit	2.7 V				4.4 mm
SLE66R35RMCC8	Infineon Technologies	CRYPTO MEMORY		8		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD		1024 words		8				70 Cel	1KX8	1K	-25 Cel		QUAD	R-XQMA-N8		3.3 V			8192 bit
FM25V10-PG	Infineon Technologies		INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	131072 words		8				85 Cel	128KX8	128K	-40 Cel	PURE TIN	DUAL	R-PDIP-T8	1	3.6 V			1048576 bit	2 V			260
SLE66R35E7HMCC8	Infineon Technologies	CRYPTO MEMORY		8		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD		1024 words		8				70 Cel	1KX8	1K	-25 Cel		QUAD	R-XQMA-N8					8192 bit		EEPROM
SLE66R35E7MCC8	Infineon Technologies	CRYPTO MEMORY		8		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD		1024 words		8				70 Cel	1KX8	1K	-25 Cel		QUAD	R-XQMA-N8					8192 bit		EEPROM
SLE66R35IMCC8	Infineon Technologies	CRYPTO MEMORY		8		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD		1024 words		8				70 Cel	1KX8	1K	-25 Cel		QUAD	R-XQMA-N8		3.3 V			8192 bit
CY15B128Q-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	16384 words	3.3	8	SMALL OUTLINE		1.27 mm	85 Cel	16KX8	16K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.6 V	1.727 mm	3.898 mm	131072 bit	2 V			260	4.889 mm
CY15B016J-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	2048 words	3.3	8	SMALL OUTLINE		1.27 mm	85 Cel	2KX8	2K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.6 V	1.727 mm	3.8985 mm	16384 bit	2.7 V			260	4.889 mm
CY15E004J-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	512 words	5	8	SMALL OUTLINE		1.27 mm	85 Cel	512X8	512	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	5.5 V	1.727 mm	3.8985 mm	4096 bit	4.5 V			260	4.889 mm
CY15E064J-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	8192 words	5	8	SMALL OUTLINE		1.27 mm	85 Cel	8KX8	8K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	5.5 V	1.727 mm	3.8985 mm	65536 bit	4.5 V			260	4.889 mm
CY15B004Q-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	512 words	3	8	SMALL OUTLINE		1.27 mm	85 Cel	512X8	512	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.6 V	1.727 mm	3.8985 mm	4096 bit	2.7 V			260	4.889 mm
CY15B016J-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	2048 words	3.3	8	SMALL OUTLINE		1.27 mm	85 Cel	2KX8	2K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.6 V	1.727 mm	3.8985 mm	16384 bit	2.7 V			260	4.889 mm
CY15E016Q-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	2048 words	5	8	SMALL OUTLINE		1.27 mm	85 Cel	2KX8	2K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	5.5 V	1.727 mm	3.8985 mm	16384 bit	4.5 V			260	4.889 mm
CY15B064Q-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	8192 words	3.3	8	SMALL OUTLINE		1.27 mm	85 Cel	8KX8	8K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.65 V	1.727 mm	3.8985 mm	65536 bit	2.7 V			260	4.889 mm
CY15B016Q-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	2048 words	3.3	8	SMALL OUTLINE		1.27 mm	85 Cel	2KX8	2K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.6 V	1.727 mm	3.8985 mm	16384 bit	2.7 V			260	4.889 mm
CY15B004Q-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	512 words	3	8	SMALL OUTLINE		1.27 mm	85 Cel	512X8	512	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.6 V	1.727 mm	3.8985 mm	4096 bit	2.7 V			260	4.889 mm
CY15B064J-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	8192 words	3.3	8	SMALL OUTLINE		1.27 mm	85 Cel	8KX8	8K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.65 V	1.727 mm	3.8985 mm	65536 bit	2.7 V			260	4.889 mm
CY15E004Q-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	512 words	5	8	SMALL OUTLINE		1.27 mm	85 Cel	512X8	512	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	5.5 V	1.727 mm	3.8985 mm	4096 bit	4.5 V			260	4.889 mm
CY15E064Q-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	8192 words	5	8	SMALL OUTLINE		1.27 mm	85 Cel	8KX8	8K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	5.5 V	1.727 mm	3.8985 mm	65536 bit	4.5 V			260	4.889 mm
CY15E016J-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	2048 words	5	8	SMALL OUTLINE		1.27 mm	85 Cel	2KX8	2K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	5.5 V	1.727 mm	3.8985 mm	16384 bit	4.5 V			260	4.889 mm
CY15B256Q-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	32768 words	3.3	8	SMALL OUTLINE		1.27 mm	85 Cel	32KX8	32K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.6 V	1.727 mm	3.898 mm	262144 bit	2 V			260	4.889 mm
CY15E016Q-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	2048 words	5	8	SMALL OUTLINE		1.27 mm	85 Cel	2KX8	2K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	5.5 V	1.727 mm	3.8985 mm	16384 bit	4.5 V			260	4.889 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.