8 Other Function Memory ICs 385

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time
EPCQ4ASI8N	Intel	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	524288 words		3			8	SMALL OUTLINE	SOP8,.25		20	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G8	3	3.6 V	1.75 mm	100 MHz	3.9 mm		4194304 bit	2.7 V	e3	30	260	NOR TYPE	.00005 Amp	4.9 mm
CY15B102Q-SXET	Infineon Technologies	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING		SYNCHRONOUS	5 mA	262144 words		3.3		2.5/3.3	8	SMALL OUTLINE	SOP8,.3	SRAMs		1.27 mm	125 Cel		256KX8	256K	-40 Cel	PURE TIN	DUAL		R-PDSO-G8	3	3.6 V	2.03 mm		5.23 mm	Not Qualified	2097152 bit	2 V			260		.00075 Amp	5.28 mm
CY15B102Q-SXE	Infineon Technologies	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING		SYNCHRONOUS	5 mA	262144 words		3.3		2.5/3.3	8	SMALL OUTLINE	SOP8,.3	SRAMs		1.27 mm	125 Cel		256KX8	256K	-40 Cel	PURE TIN	DUAL		R-PDSO-G8	3	3.6 V	2.03 mm		5.23 mm	Not Qualified	2097152 bit	2 V		30	260		.00075 Amp	5.28 mm
ST25DV04K-IER6T3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		4096 words		3.3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		4KX1	4K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.2 mm		3 mm		4096 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED			4.4 mm
ST25DV64K-IER6S3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		65536 words		3.3			1	SMALL OUTLINE				1.27 mm	85 Cel		64KX1	64K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.75 mm		3.9 mm		65536 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED			4.9 mm
M24SR64-YDW6T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		8192 words		3.3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		8KX8	8K	-40 Cel		DUAL		R-PDSO-G8	1	5.5 V	1.2 mm		3 mm		65536 bit	2.7 V						4.4 mm
47L16-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words			EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm		3.9 mm		16384 bit	2.7 V	e3	40	260			4.9 mm	400 ns
47L16-I/ST	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words			EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			.65 mm	85 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm		3 mm		16384 bit	2.7 V	e3	40	260			4.4 mm	400 ns
ST25DV16K-IER6S3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		16384 words		3.3			1	SMALL OUTLINE				1.27 mm	85 Cel		16KX1	16K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.75 mm		3.9 mm		16384 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED			4.9 mm
ST25DV64K-IER6T3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		65536 words		3.3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		64KX1	64K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.2 mm		3 mm		65536 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED			4.4 mm
MR25H10CDFR	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		SYNCHRONOUS	27 mA	131072 words		3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	SRAMs		1.27 mm	85 Cel		128KX8	128K	-40 Cel	MATTE TIN	DUAL		R-PDSO-N8	3	3.6 V	.9 mm		5 mm	Not Qualified	1048576 bit	2.7 V	e3	30	260		.000115 Amp	6 mm
MB85RS256BPNF-G-JNE1	Fujitsu	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	6 mA	32768 words		3.3		3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs		1.27 mm	85 Cel		32KX8	32K	-40 Cel		DUAL		R-PDSO-G8		3.6 V	1.75 mm		3.9 mm	Not Qualified	262144 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	5.05 mm
ST25DV04K-IER6S3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		4096 words		3.3			1	SMALL OUTLINE				1.27 mm	85 Cel		4KX1	4K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.75 mm		3.9 mm		4096 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED			4.9 mm
M24SR64-YMN6T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		8192 words		3.3			8	SMALL OUTLINE				1.27 mm	85 Cel		8KX8	8K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.75 mm		3.9 mm		65536 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED			4.9 mm
ST25DV16K-IER6T3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		16384 words		3.3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		16KX1	16K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.2 mm		3 mm		16384 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED			4.4 mm
47L16-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words			EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	125 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm		3.9 mm		16384 bit	2.7 V	e3	40	260			4.9 mm	400 ns
47L16T-I/ST	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words			EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			.65 mm	85 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm		3 mm		16384 bit	2.7 V	e3	40	260			4.4 mm	400 ns
47L16-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words			EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			.65 mm	125 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm		3 mm		16384 bit	2.7 V	e3	40	260			4.4 mm	400 ns
MR25H10CDF	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		SYNCHRONOUS	27 mA	131072 words		3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	SRAMs		1.27 mm	85 Cel		128KX8	128K	-40 Cel	MATTE TIN	DUAL		R-PDSO-N8	3	3.6 V	.9 mm		5 mm	Not Qualified	1048576 bit	2.7 V	e3	30	260		.000115 Amp	6 mm
MR25H256ACDF	Everspin Technologies	SPI BUS SERIAL EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		SYNCHRONOUS		32768 words		3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		32KX8	32K	-40 Cel		DUAL		R-PDSO-N8	3	3.6 V	.9 mm		5 mm		262144 bit	2.7 V						6 mm
47L16T-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words			EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm		3.9 mm		16384 bit	2.7 V	e3	40	260			4.9 mm	400 ns
ST25DV04K-IER6C3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		SYNCHRONOUS		4096 words		3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	85 Cel		4KX1	4K	-40 Cel		DUAL		R-PDSO-N8		5.5 V	.6 mm		2 mm		4096 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED			3 mm
MR25H10MDF	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		SYNCHRONOUS		131072 words		3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel		128KX8	128K	-40 Cel	MATTE TIN	DUAL		R-PDSO-N8	3	3.6 V	.9 mm		5 mm		1048576 bit	3 V	e3	30	260			6 mm
EPCQ32ASI8N	Intel	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	4194304 words		3			8	SMALL OUTLINE	SOP8,.25		20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel		DUAL		R-PDSO-G8		3.6 V	1.75 mm	100 MHz	3.9 mm		33554432 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	4.9 mm
47L64-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		8192 words		3.3	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		8KX8	8K	-40 Cel		DUAL	1	R-PDSO-G8		3.6 V	1.75 mm		3.9 mm		65536 bit	2.7 V						4.9 mm	550 ns
47L16T-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words			EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	125 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm		3.9 mm		16384 bit	2.7 V	e3	40	260			4.9 mm	400 ns
MB85RS256BPNF-G-JNERE1	Fujitsu	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	6 mA	32768 words		3.3		3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs		1.27 mm	85 Cel		32KX8	32K	-40 Cel		DUAL		R-PDSO-G8		3.6 V	1.75 mm		3.9 mm	Not Qualified	262144 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	5.05 mm
47C16-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words		5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm		3.9 mm		16384 bit	4.5 V	e3	40	260			4.9 mm	400 ns
47L16-E/P	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS		2048 words			EEPROM+SRAM		8	IN-LINE	DIP8,.3			2.54 mm	125 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T8		3.6 V	5.334 mm		7.62 mm		16384 bit	2.7 V	e3					9.271 mm	400 ns
47L16-I/P	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS		2048 words			EEPROM+SRAM		8	IN-LINE	DIP8,.3			2.54 mm	85 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T8		3.6 V	5.334 mm		7.62 mm		16384 bit	2.7 V	e3					9.271 mm	400 ns
MR25H256CDC	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	HSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		SYNCHRONOUS		32768 words		3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG	SOLCC8,.25	SRAMs		1.27 mm	85 Cel		32KX8	32K	-40 Cel		DUAL		R-PDSO-N8	3	3.6 V	1.05 mm		5 mm	Not Qualified	262144 bit	2.7 V					.00001 Amp	6 mm
47C16T-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words		5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm		3.9 mm		16384 bit	4.5 V	e3	40	260			4.9 mm	400 ns
AT88SC0104CA-SH-T	Microchip Technology	CRYPTO MEMORY		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		128 words					8	SMALL OUTLINE	SOP8,.25			1.27 mm	85 Cel		128X8	128	-40 Cel	MATTE TIN	DUAL		R-PDSO-G8		3.6 V	1.75 mm		3.9 mm		1024 bit	2.7 V	e3					4.9 mm
MR25H10CDC	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		SYNCHRONOUS	27 mA	131072 words		3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	SRAMs		1.27 mm	85 Cel		128KX8	128K	-40 Cel		DUAL		R-PDSO-N8		3.6 V	1 mm		5 mm	Not Qualified	1048576 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED		.000115 Amp	6 mm
MR20H40CDFR	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		SYNCHRONOUS	46.5 mA	524288 words		3.3		3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	SRAMs		1.27 mm	85 Cel		512KX8	512K	-40 Cel		DUAL		R-PDSO-N8	3	3.6 V	.9 mm		5 mm	Not Qualified	4194304 bit	3 V					.00075 Amp	6 mm
MR25H256CDF	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		SYNCHRONOUS		32768 words		3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		32KX8	32K	-40 Cel	MATTE TIN	DUAL		R-PDSO-N8	3	3.6 V	.9 mm		5 mm		262144 bit	2.7 V	e3	30	260			6 mm
M30082040054X0IWAY	Renesas Electronics	MEMORY CIRCUIT		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		SYNCHRONOUS		1048576 words		3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			1.27 mm	85 Cel		1MX8	1M	-40 Cel	TIN	DUAL		R-PDSO-N8	3	3.6 V	.8 mm		5 mm		8388608 bit	2.7 V	e3		260			6 mm
CY15B104QSN-108SXIES	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		524288 words		3			8	SMALL OUTLINE				1.27 mm	85 Cel		512KX8	512K	-40 Cel		DUAL		R-PDSO-G8		3.6 V	2.03 mm		5.23 mm		4194304 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED			5.23 mm
47C04T-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	125 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm		3.9 mm		4096 bit	4.5 V	e3	40	260			4.9 mm	400 ns
47L04-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words			EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm		3.9 mm		4096 bit	2.7 V	e3	40	260			4.9 mm	400 ns
CY15B256Q-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		32768 words		3.3			8	SMALL OUTLINE				1.27 mm	85 Cel		32KX8	32K	-40 Cel	PURE TIN	DUAL		R-PDSO-G8	3	3.6 V	1.727 mm		3.898 mm		262144 bit	2 V			260			4.889 mm
47C04-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm		3.9 mm		4096 bit	4.5 V	e3	40	260			4.9 mm	400 ns
AT88SC0204C-MJ	Microchip Technology	CRYPTO MEMORY	COMMERCIAL	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		SYNCHRONOUS		256 words					8	UNCASED CHIP	DIE OR CHIP				70 Cel		256X8	256	0 Cel	Nickel/Gold (Ni/Au)	UPPER	1	R-XUUC-N8	1	5.5 V					2048 bit	2.7 V	e4						35 ns
AT88SC25616C-SU	Microchip Technology	CRYPTO MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		32768 words					8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		32KX8	32K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.75 mm		3.9 mm		262144 bit	2.7 V	e3					4.925 mm	35 ns
M24SR64-YMC6T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		SYNCHRONOUS		8192 words		3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	85 Cel		8KX8	8K	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-N8	1	5.5 V	.6 mm		2 mm		65536 bit	2.7 V	e4	30	260			3 mm
47C04-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	125 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm		3.9 mm		4096 bit	4.5 V	e3	40	260			4.9 mm	400 ns
XC17S30PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	10 mA	247968 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	247968X1	247968	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL		R-PDIP-T8	1	5.5 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	247968 bit	4.5 V	e0	30	225		.00005 Amp	9.3599 mm
47C04T-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			.65 mm	125 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.2 mm		3 mm		4096 bit	4.5 V	e3	40	260			4.4 mm	400 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.