8 Other Function Memory ICs 385

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
47C04T-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		512X8	512	-40 Cel	MATTE TIN		DUAL	1		R-PDSO-G8	3	5.5 V	1.75 mm			3.9 mm			4096 bit	4.5 V		e3	40	260		4.9 mm	400 ns
47L04-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words			EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			.65 mm	125 Cel		512X8	512	-40 Cel	MATTE TIN		DUAL	1		R-PDSO-G8	1	3.6 V	1.2 mm			3 mm			4096 bit	2.7 V		e3	40	260		4.4 mm	400 ns
AT88SC25616C-MJ	Microchip Technology	CRYPTO MEMORY	COMMERCIAL	8	XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED		SYNCHRONOUS		32768 words					8	MICROELECTRONIC ASSEMBLY	MODULE,8LEAD,.46				70 Cel		32KX8	32K	0 Cel	Nickel/Gold (Ni/Au)		UNSPECIFIED	1		R-XXMA-X8		5.5 V							262144 bit	2.7 V		e4					35 ns
AT88SC25616C-MJTG	Microchip Technology	CRYPTO MEMORY	COMMERCIAL	8	XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED		SYNCHRONOUS		32768 words					8	MICROELECTRONIC ASSEMBLY	MODULE,8LEAD,.46				70 Cel		32KX8	32K	0 Cel	MATTE TIN		UNSPECIFIED	1		R-XXMA-X8		5.5 V							262144 bit	2.7 V							35 ns
M24SR64-YDW8T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		65536 words					1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	105 Cel		64KX1	64K	-40 Cel			DUAL			R-PDSO-G8		5.5 V	1.2 mm			2.9 mm			65536 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		4.3 mm
M24SR64-YMN8T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		65536 words					1	SMALL OUTLINE				1.27 mm	105 Cel		64KX1	64K	-40 Cel			DUAL			R-PDSO-G8		5.5 V	1.75 mm			3.9 mm			65536 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		4.9 mm
47C04-I/ST	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			.65 mm	85 Cel		512X8	512	-40 Cel	MATTE TIN		DUAL	1		R-PDSO-G8	1	5.5 V	1.2 mm			3 mm			4096 bit	4.5 V		e3	40	260		4.4 mm	400 ns
M30162040108X0IWAY	Renesas Electronics	MEMORY CIRCUIT		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		SYNCHRONOUS		2097152 words		3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			1.27 mm	85 Cel		2MX8	2M	-40 Cel	TIN		DUAL			R-PDSO-N8	3	3.6 V	.8 mm			5 mm			16777216 bit	2.7 V		e3		260		6 mm
CY15B108QN-20LPXCES	Infineon Technologies	MEMORY CIRCUIT	COMMERCIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		SYNCHRONOUS		1048576 words		3.3			8	SMALL OUTLINE, VERY THIN PROFILE				.65 mm	70 Cel		1MX8	1M	0 Cel			DUAL			R-PDSO-N8		3.6 V	.55 mm			3.23 mm			8388608 bit	1.8 V						3.28 mm
M30082040108X0PWAY	Renesas Electronics	MEMORY CIRCUIT		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		SYNCHRONOUS		1048576 words		3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			1.27 mm	105 Cel		1MX8	1M	-40 Cel	TIN		DUAL			R-PDSO-N8	3	3.6 V	.8 mm			5 mm			8388608 bit	2.7 V		e3		260		6 mm
MB85AS4MTPF-G-BCERE1	Fujitsu	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		524288 words		3.3			8	SMALL OUTLINE	SOP8,.3			1.27 mm	85 Cel		512KX8	512K	-40 Cel			DUAL			R-PDSO-G8		3.6 V	1.73 mm			5.3 mm			4194304 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED		5.85 mm
MR25H256ACDFR	Everspin Technologies	SPI BUS SERIAL EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		SYNCHRONOUS		32768 words		3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		32KX8	32K	-40 Cel			DUAL			R-PDSO-N8	3	3.6 V	.9 mm			5 mm			262144 bit	2.7 V						6 mm
47C04-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			.65 mm	125 Cel		512X8	512	-40 Cel	MATTE TIN		DUAL	1		R-PDSO-G8	1	5.5 V	1.2 mm			3 mm			4096 bit	4.5 V		e3	40	260		4.4 mm	400 ns
47L16T-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words			EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			.65 mm	125 Cel		2KX8	2K	-40 Cel	MATTE TIN		DUAL	1		R-PDSO-G8	1	3.6 V	1.2 mm			3 mm			16384 bit	2.7 V		e3	40	260		4.4 mm	400 ns
AT88SC0104CA-SH	Microchip Technology	CRYPTO MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		128 words				3/3.3	8	SMALL OUTLINE	SOP8,.23	EEPROMs		1.27 mm	85 Cel		128X8	128	-40 Cel			DUAL	1		R-PDSO-G8		3.6 V	1.75 mm			3.9 mm	Not Qualified		1024 bit	2.7 V						4.9 mm	250 ns
MR25H256MDC	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	8	HSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD		SYNCHRONOUS		32768 words		3.3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG	SOLCC8,.25	SRAMs		1.27 mm	125 Cel		32KX8	32K	-40 Cel			DUAL			R-PDSO-N8		3.6 V	1.05 mm			5 mm	Not Qualified		262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.00001 Amp	6 mm
MR44V100AMAZAATL	Lapis Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		131072 words		3.3			8	SMALL OUTLINE, LOW PROFILE				1.27 mm	85 Cel		128KX8	128K	-40 Cel			DUAL			R-PDSO-G8		3.6 V	1.65 mm			3.9 mm			1048576 bit	1.8 V						4.9 mm
MR45V032AMAZBATL	Lapis Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		4096 words		3.3			8	SMALL OUTLINE, LOW PROFILE				1.27 mm	85 Cel		4KX8	4K	-40 Cel			DUAL			R-PDSO-G8		3.6 V	1.65 mm			3.9 mm			32768 bit	2.7 V						4.9 mm
AT88SC25616C-SU-T	Microchip Technology	CRYPTO MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		32768 words					8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		32KX8	32K	-40 Cel	Matte Tin (Sn)		DUAL	1		R-PDSO-G8		5.5 V	1.75 mm			3.9 mm			262144 bit	2.7 V		e3				4.925 mm	35 ns
MR44V064BMAZAATL	Lapis Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		8192 words		3.3			8	SMALL OUTLINE, LOW PROFILE				1.27 mm	85 Cel		8KX8	8K	-40 Cel			DUAL			R-PDSO-G8		3.6 V	1.65 mm			3.9 mm			65536 bit	1.8 V						4.9 mm
AT88SC018-SU-CM-T	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		4096 words					1	SMALL OUTLINE	SOP8,.25			1.27 mm	85 Cel		4KX1	4K	-40 Cel	MATTE TIN		DUAL			R-PDSO-G8		3.6 V	1.75 mm			3.9 mm	Not Qualified		4096 bit	2.7 V		e3				4.925 mm
XC17S150XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	5 mA	1040128 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	1040128X1	1040128	0 Cel	TIN LEAD		DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		1040128 bit	3 V		e0	30	225	.00005 Amp	9.3599 mm
XC17S40PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	10 mA	329312 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	329312X1	329312	-40 Cel	Tin/Lead (Sn85Pb15)		DUAL			R-PDIP-T8	1	5.5 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		329312 bit	4.5 V		e0	30	225	.00005 Amp	9.3599 mm
CY8C20142-SX1I	Cypress Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words		3			1	SMALL OUTLINE				1.27 mm	85 Cel		2KX1	2K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8	3	5.25 V	1.727 mm			3.9 mm	Not Qualified		2048 bit	2.4 V	SRAM IS ORGANISED AS 512MB	e4	20	260		4.889 mm
XC17S20PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	10 mA	178144 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	178144X1	178144	0 Cel	Tin/Lead (Sn85Pb15)		DUAL			R-PDIP-T8	1	5.25 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		178144 bit	4.75 V		e0	30	225	.00005 Amp	9.3599 mm
MR45V064BMAZAATL	Lapis Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		8192 words		3.3			8	SMALL OUTLINE, LOW PROFILE				1.27 mm	85 Cel		8KX8	8K	-40 Cel			DUAL			R-PDSO-G8		3.6 V	1.65 mm			3.9 mm			65536 bit	1.8 V						4.9 mm
AT88SC0104C-SU	Atmel	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	1024 words		3.3		3/5	1	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		1KX1	1K	-40 Cel	MATTE TIN	1011CCCC	DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles		3.9 mm	Not Qualified	I2C	1024 bit	2.7 V		e3			.0001 Amp	4.925 mm
CY15B004J-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words		3.3			8	SMALL OUTLINE				1.27 mm	85 Cel		512X8	512	-40 Cel	PURE TIN		DUAL			R-PDSO-G8	3	3.65 V	1.727 mm			3.8985 mm			4096 bit	2.7 V				260		4.889 mm
MR45V200BRAZAARL	Lapis Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS		262144 words		3.3			8	IN-LINE				2.54 mm	85 Cel		256KX8	256K	-40 Cel			DUAL			R-PDIP-T8		3.6 V				7.62 mm			2097152 bit	2.7 V						9.2 mm
XC17S10XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	5 mA	95752 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	95752X1	95752	0 Cel	TIN LEAD		DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		95752 bit	3 V		e0	30	225	.00005 Amp	9.3599 mm
XC17S30XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	5 mA	249168 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	249168X1	249168	-40 Cel	TIN LEAD		DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		249168 bit	3 V		e0	30	225	.00005 Amp	9.3599 mm
47L04T-I/ST	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words			EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			.65 mm	85 Cel		512X8	512	-40 Cel	MATTE TIN		DUAL	1		R-PDSO-G8	1	3.6 V	1.2 mm			3 mm			4096 bit	2.7 V		e3	40	260		4.4 mm	400 ns
AT88SC0104C-SH-T	Microchip Technology	CRYPTO MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		128 words					8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		128X8	128	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	1		R-PDSO-G8		5.5 V	1.75 mm			3.9 mm			1024 bit	2.7 V		e4				4.925 mm	35 ns
AT88SC0104CA-Y6H-T	Microchip Technology	CRYPTO MEMORY	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		SYNCHRONOUS		128 words				3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	EEPROMs		.5 mm	85 Cel		128X8	128	-40 Cel			DUAL	1		R-XDSO-N8		3.6 V	.6 mm			2 mm	Not Qualified		1024 bit	2.7 V						3 mm	250 ns
AT88SC018-SU-CN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		4096 words					1	SMALL OUTLINE	SOP8,.25			1.27 mm	85 Cel		4KX1	4K	-40 Cel	MATTE TIN		DUAL			R-PDSO-G8		3.6 V	1.75 mm			3.9 mm	Not Qualified		4096 bit	2.7 V		e3				4.925 mm
AT88SC0204CA-SH-T	Microchip Technology	CRYPTO MEMORY		8	SOP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		GULL WING		SYNCHRONOUS		256 words					8	SMALL OUTLINE	SOP8,.25			1.27 mm	85 Cel		256X8	256	-40 Cel	MATTE TIN		DUAL			R-PDSO-G8		3.6 V	1.75 mm			3.9 mm			2048 bit	2.7 V		e3				4.9 mm
AT88SC0404CA-SH	Microchip Technology	CRYPTO MEMORY	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words		3.3			8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		512X8	512	-40 Cel			DUAL	1		R-PDSO-G8		3.6 V	1.75 mm			3.9 mm			4096 bit	2.7 V						4.9 mm	250 ns
AT88SC0808CA-SH	Microchip Technology	CRYPTO MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		1024 words				3/3.3	8	SMALL OUTLINE	SOP8,.23	EEPROMs		1.27 mm	85 Cel		1KX8	1K	-40 Cel			DUAL	1		R-PDSO-G8		3.6 V	1.75 mm			3.9 mm	Not Qualified		8192 bit	2.7 V						4.9 mm	250 ns
USBF129T-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING		SYNCHRONOUS		524288 words					8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		512KX8	512K	-40 Cel	MATTE TIN		DUAL	1		R-PDSO-G8		3.6 V	1.75 mm			3.9 mm			4194304 bit	2.7 V		e3				4.9 mm
DLPR100DWC	Texas Instruments	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES				GULL WING				2097152 words				2.5/3.3	8	SMALL OUTLINE	SOP8,.25	OTP ROMs		1.27 mm	85 Cel		2MX8	2M	-40 Cel			DUAL			R-PDSO-G8	3						Not Qualified		16777216 bit				30	260	.00005 Amp
DS1652	Analog Devices	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE						5		5		IN-LINE	DIP8,.3	Other Memory ICs		2.54 mm	70 Cel				0 Cel	TIN LEAD		DUAL			R-PDIP-T8							Not Qualified					e0
DS1651	Analog Devices	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE						5		5		IN-LINE	DIP8,.3	Other Memory ICs		2.54 mm	70 Cel				0 Cel	TIN LEAD		DUAL			R-PDIP-T8							Not Qualified					e0
DS1652BS	Analog Devices	MEMORY CIRCUIT	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING						5		5		SMALL OUTLINE	SOP8,.25	Other Memory ICs		1.27 mm	70 Cel				0 Cel	TIN LEAD		DUAL			R-PDSO-G8							Not Qualified					e0
DS1651S	Analog Devices	MEMORY CIRCUIT	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING						5		5		SMALL OUTLINE	SOP8,.25	Other Memory ICs		1.27 mm	70 Cel				0 Cel	TIN LEAD		DUAL			R-PDSO-G8							Not Qualified					e0
DS1652SB	Analog Devices	MEMORY CIRCUIT	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		64 words		5			1	SMALL OUTLINE				1.27 mm	85 Cel		64X1	64	-25 Cel	TIN LEAD		DUAL			R-PDSO-G8	1	5.5 V	2.13 mm			5.285 mm	Not Qualified		64 bit	2.7 V		e0				5.31 mm
DS1652B	Analog Devices	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE						5		5		IN-LINE	DIP8,.3	Other Memory ICs		2.54 mm	70 Cel				0 Cel	TIN LEAD		DUAL			R-PDIP-T8							Not Qualified					e0
N36RW02DTPT3G	Onsemi	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1			GULL WING				64 words					32	SMALL OUTLINE	SOP8,.25			1.27 mm	105 Cel		64X32	64	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8		10 V	1.75 mm			3.9 mm			2048 bit	1.8 V						4.9 mm
N36RW02DWPT3G	Onsemi	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1			GULL WING				64 words					32	SMALL OUTLINE	SOP8,.25			1.27 mm	105 Cel		64X32	64	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8		10 V	1.75 mm			3.9 mm			2048 bit	1.8 V						4.9 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.