8 Other Function Memory ICs 385

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length
CY15V102QN-50SXEES	Infineon Technologies	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SYNCHRONOUS		262144 words		1.8		8	SMALL OUTLINE			1.27 mm	125 Cel		256KX8	256K	-40 Cel		DUAL	R-PDSO-G8		1.89 V	2.03 mm		5.23 mm		2097152 bit	1.71 V		NOT SPECIFIED	NOT SPECIFIED		5.23 mm
CY15B064J-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		8192 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		8KX8	8K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.65 V	1.727 mm		3.8985 mm		65536 bit	2.7 V			260		4.889 mm
CY15E004J-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		512 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		512X8	512	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	5.5 V	1.727 mm		3.8985 mm		4096 bit	4.5 V			260		4.889 mm
CY15B128Q-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		16384 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		16KX8	16K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.6 V	1.727 mm		3.898 mm		131072 bit	2 V			260		4.889 mm
CY15E064J-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		8192 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		8KX8	8K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	5.5 V	1.727 mm		3.8985 mm		65536 bit	4.5 V			260		4.889 mm
CY15E064Q-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		8192 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		8KX8	8K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	5.5 V	1.727 mm		3.8985 mm		65536 bit	4.5 V			260		4.889 mm
CY15E016J-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		2048 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		2KX8	2K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	5.5 V	1.727 mm		3.8985 mm		16384 bit	4.5 V			260		4.889 mm
CY15B004J-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		512 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		512X8	512	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.65 V	1.727 mm		3.8985 mm		4096 bit	2.7 V			260		4.889 mm
CY15E004Q-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		512 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		512X8	512	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	5.5 V	1.727 mm		3.8985 mm		4096 bit	4.5 V			260		4.889 mm
CY15B064Q-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		8192 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		8KX8	8K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.65 V	1.727 mm		3.8985 mm		65536 bit	2.7 V			260		4.889 mm
CY15B016Q-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		2048 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		2KX8	2K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.6 V	1.727 mm		3.8985 mm		16384 bit	2.7 V			260		4.889 mm
DS1652S	Maxim Integrated	MEMORY CIRCUIT	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING					5	5		SMALL OUTLINE	SOP8,.25	Other Memory ICs	1.27 mm	70 Cel				0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G8						Not Qualified			e0
DS2436Z/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS		256 words			2.4/10	1	SMALL OUTLINE	SOP8,.25	Other Memory ICs	1.27 mm	85 Cel		256X1	256	-40 Cel	TIN LEAD	DUAL	R-PDSO-G8		10 V	1.75 mm		3.9 mm	Not Qualified	256 bit	2.4 V	e0				4.9 mm
DS2436Z	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS		256 words			2.4/10	1	SMALL OUTLINE	SOP8,.25	Other Memory ICs	1.27 mm	85 Cel		256X1	256	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	1	10 V	1.75 mm		3.9 mm	Not Qualified	256 bit	2.4 V	e0	20	245		4.9 mm
DS2436Z+	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS		256 words			2.4/10	1	SMALL OUTLINE	SOP8,.25	Other Memory ICs	1.27 mm	85 Cel		256X1	256	-40 Cel	MATTE TIN	DUAL	R-PDSO-G8	1	10 V	1.75 mm		3.9 mm	Not Qualified	256 bit	2.4 V	e3	30	260		4.9 mm
DS2436Z+T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS		256 words			2.4/10	1	SMALL OUTLINE	SOP8,.25	Other Memory ICs	1.27 mm	85 Cel		256X1	256	-40 Cel	MATTE TIN	DUAL	R-PDSO-G8		10 V	1.75 mm		3.9 mm	Not Qualified	256 bit	2.4 V	e3	30	260		4.9 mm
XC17S150XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	5 mA	1040128 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	1040128X1	1040128	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	1040128 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC1736DDDG8M	Xilinx	MEMORY CIRCUIT	MILITARY	8	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS		36288 words		5		1	IN-LINE			2.54 mm	125 Cel		36288X1	36288	-55 Cel		DUAL	R-GDIP-T8		5.5 V	5.08 mm		7.62 mm	Not Qualified	36288 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED		10.16 mm
XC17S05VO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	10 mA	53984 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	53984X1	53984	0 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	5.25 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	53984 bit	4.75 V	e0	30	225	.00005 Amp	4.9 mm
XC17S100XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	5 mA	781248 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	781248X1	781248	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	781248 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC1765DDDG8M	Xilinx	MEMORY CIRCUIT	MILITARY	8	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS		65536 words		5		1	IN-LINE			2.54 mm	125 Cel		64KX1	64K	-55 Cel	MATTE TIN	DUAL	R-GDIP-T8		5.5 V	5.08 mm		7.62 mm	Not Qualified	65536 bit	4.5 V	e3				10.16 mm
XC17S05XLVO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	5 mA	54544 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	54544X1	54544	0 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	54544 bit	3 V	e0	30	225	.00005 Amp	4.9 mm
XC17S05XLPDG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS		54544 words		3.3		1	IN-LINE			2.54 mm	85 Cel		54544X1	54544	-40 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		7.62 mm	Not Qualified	54544 bit	3 V	e3	30	250		9.3599 mm
XC17S40PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	10 mA	329312 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	329312X1	329312	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	5.25 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	329312 bit	4.75 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S05XLVOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		54544 words		3.3		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		54544X1	54544	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	54544 bit	3 V	e3	30	260		4.9 mm
XC17S20VO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	10 mA	178144 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	178144X1	178144	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	5.5 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	178144 bit	4.5 V	e0	30	225	.00005 Amp	4.9 mm
XC17S20XLVO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	5 mA	179160 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	179160X1	179160	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	179160 bit	3 V	e0	30	225	.00005 Amp	4.9 mm
XC17S30VO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	10 mA	247968 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	247968X1	247968	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	5.25 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	247968 bit	4.75 V	e0	30	225	.00005 Amp	4.9 mm
XC17S05VOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		53984 words		5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		53984X1	53984	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	5.5 V	1.2 mm		3.9 mm	Not Qualified	53984 bit	4.5 V	e3	30	260		4.9 mm
XC17S50XLPDG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS		559232 words		3.3		1	IN-LINE			2.54 mm	70 Cel		559232X1	559232	0 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		7.62 mm	Not Qualified	559232 bit	3 V	e3	30	250		9.3599 mm
XC17S30PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	10 mA	247968 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	247968X1	247968	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	5.25 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	247968 bit	4.75 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S05PDG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS		53984 words		5		1	IN-LINE			2.54 mm	70 Cel		53984X1	53984	0 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	5.25 V	4.5974 mm		7.62 mm	Not Qualified	53984 bit	4.75 V	e3	30	250		9.3599 mm
XC17S10XLVOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	5 mA	95752 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	DIP8,.3	OTP ROMs	1.27 mm	85 Cel	3-STATE	95752X1	95752	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	95752 bit	3 V	e3	30	260	.00005 Amp	4.9 mm
XC17S30XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	5 mA	249168 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	249168X1	249168	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	249168 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S30XLVOG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	5 mA	249168 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	249168X1	249168	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	249168 bit	3 V	e3	30	260	.00005 Amp	4.9 mm
XC17S20XLVOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		179160 words		3.3		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		179160X1	179160	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	179160 bit	3 V	e3	30	260		4.9 mm
XC17S30XLPDG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	5 mA	249168 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	249168X1	249168	0 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	249168 bit	3 V	e3	30	250	.00005 Amp	9.3599 mm
XC17S30VOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		247968 words		5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		247968X1	247968	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	5.5 V	1.2 mm		3.9 mm	Not Qualified	247968 bit	4.5 V	e3	30	260		4.9 mm
XC17S30PDG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS		247968 words		5		1	IN-LINE			2.54 mm	70 Cel		247968X1	247968	0 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	5.25 V	4.5974 mm		7.62 mm	Not Qualified	247968 bit	4.75 V	e3	30	250		9.3599 mm
XC17S30XLPDG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS		249168 words		3.3		1	IN-LINE			2.54 mm	85 Cel		249168X1	249168	-40 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		7.62 mm	Not Qualified	249168 bit	3 V	e3	30	250		9.3599 mm
XC17S05XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	5 mA	54544 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	54544X1	54544	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	54544 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S30XLVO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	5 mA	249168 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	249168X1	249168	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	249168 bit	3 V	e0	30	225	.00005 Amp	4.9 mm
XC17S05XLVOG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		54544 words		3.3		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		54544X1	54544	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	54544 bit	3 V	e3	30	260		4.9 mm
XC17S50XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	5 mA	559232 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	559232X1	559232	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	559232 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S40PDG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS		329312 words		5		1	IN-LINE			2.54 mm	70 Cel		329312X1	329312	0 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	5.25 V	4.5974 mm		7.62 mm	Not Qualified	329312 bit	4.75 V	e3	30	250		9.3599 mm
XC17S10XLPDG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	5 mA	95752 words	COMMON	3.3	3.3	1	IN-LINE	TSOP8,.25	OTP ROMs	2.54 mm	70 Cel	3-STATE	95752X1	95752	0 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	95752 bit	3 V	e3	30	250	.00005 Amp	9.3599 mm
XC17S05VO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	10 mA	53984 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	53984X1	53984	-40 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	5.5 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	53984 bit	4.5 V	e0	30	225	.00005 Amp	4.9 mm
XC17S10VOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		95008 words		5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		95008X1	95008	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	5.5 V	1.2 mm		3.9 mm	Not Qualified	95008 bit	4.5 V	e3	30	260		4.9 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.