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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
79R3020-33J	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND		80 mA			5		5		CHIP CARRIER	LDCC68,1.0SQ	Other Memory ICs	1.27 mm	70 Cel				0 Cel	TIN LEAD	QUAD	S-PQCC-J68	1					Not Qualified				e0	20	225
79R3020-12GM	Renesas Electronics	MEMORY CIRCUIT	MILITARY	68	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG					5		5		GRID ARRAY	PGA68,11X11	Other Memory ICs	2.54 mm	125 Cel				-55 Cel	TIN LEAD	PERPENDICULAR	S-XPGA-P68						Not Qualified				e0
UPD46128953F1-E12X-EB1	Renesas Electronics		OTHER	127	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL		60 mA	4194304 words	COMMON	1.8		1.8	32	GRID ARRAY, FINE PITCH	BGA127,14X14,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM	S-PBGA-B127				83 MHz		Not Qualified	134217728 bit
M66223FP	Renesas Electronics	MEMORY CIRCUIT		80	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS		4096 words		5			16	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm			4KX16	4K			QUAD	S-PQFP-G80			1.7 mm		12 mm		65536 bit							12 mm
IDT79R3020-33GB	Renesas Electronics	MEMORY CIRCUIT	MILITARY	68	PGA	SQUARE	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	PIN/PEG		80 mA			5		5		GRID ARRAY	PGA68,11X11	Other Memory ICs	2.54 mm	125 Cel				-55 Cel	TIN LEAD	PERPENDICULAR	S-XPGA-P68						Not Qualified				e0
79R3020-20J	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND		60 mA			5		5		CHIP CARRIER	LDCC68,1.0SQ	Other Memory ICs	1.27 mm	70 Cel				0 Cel	TIN LEAD	QUAD	S-PQCC-J68	1					Not Qualified				e0	20	225
79R3020-16G	Renesas Electronics		COMMERCIAL	68	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG		50 mA			5		5		GRID ARRAY	PGA68,11X11	Other Memory ICs	2.54 mm	70 Cel				0 Cel	Tin/Lead (Sn/Pb)	PERPENDICULAR	S-XPGA-P68						Not Qualified				e0
UPD487000GC-30	Renesas Electronics		COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING					3.3		3.3		FLATPACK	QFP100,.63SQ,20	Other Memory ICs	.5 mm	70 Cel				0 Cel	Tin/Lead (Sn/Pb)	QUAD	S-PQFP-G100						Not Qualified				e0					35 ns
79R3020-20G	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	68	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG		60 mA			5		5		GRID ARRAY	PGA68,11X11	Other Memory ICs	2.54 mm	70 Cel				0 Cel	TIN LEAD	PERPENDICULAR	S-XPGA-P68						Not Qualified				e0
79R3020-12G	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	68	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG					5		5		GRID ARRAY	PGA68,11X11	Other Memory ICs	2.54 mm	70 Cel				0 Cel	TIN LEAD	PERPENDICULAR	S-XPGA-P68						Not Qualified				e0
IDT79R3020-12GM	Renesas Electronics	MEMORY CIRCUIT	MILITARY	68	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG					5		5		GRID ARRAY	PGA68,11X11	Other Memory ICs	2.54 mm	125 Cel				-55 Cel	TIN LEAD	PERPENDICULAR	S-XPGA-P68						Not Qualified				e0
LR3220GC-25	Broadcom	MEMORY CIRCUIT	COMMERCIAL	180	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG		160 mA			5		5		GRID ARRAY	PGA180M,15X15	Other Memory ICs	2.54 mm	70 Cel				0 Cel	TIN LEAD	PERPENDICULAR	S-XPGA-P180						Not Qualified				e0
LR3220QC-25	Broadcom	MEMORY CIRCUIT	COMMERCIAL	184	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING		160 mA			5		5		FLATPACK	QFP184,1.26SQ,20	Other Memory ICs	.5 mm	70 Cel				0 Cel	Tin/Lead (Sn/Pb)	QUAD	S-PQFP-G184						Not Qualified				e0
LR3220GM-25	Broadcom	MEMORY CIRCUIT	MILITARY	180	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG		160 mA			5		5		GRID ARRAY	PGA180M,15X15	Other Memory ICs	2.54 mm	125 Cel				-55 Cel	Tin/Lead (Sn/Pb)	PERPENDICULAR	S-XPGA-P180						Not Qualified				e0
LR3220GM-33	Broadcom		MILITARY	180	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG		170 mA			5		5		GRID ARRAY	PGA180M,15X15	Other Memory ICs	2.54 mm	125 Cel				-55 Cel	Tin/Lead (Sn/Pb)	PERPENDICULAR	S-XPGA-P180						Not Qualified				e0
LR3220QC-33	Broadcom		COMMERCIAL	184	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING		170 mA			5		5		FLATPACK	QFP184,1.26SQ,20	Other Memory ICs	.5 mm	70 Cel				0 Cel	Tin/Lead (Sn/Pb)	QUAD	S-PQFP-G184						Not Qualified				e0
K522H1HACF-B050	Samsung	MEMORY CIRCUIT	OTHER	153	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL		25 mA			1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA153,14X14,20	Other Memory ICs	.5 mm	85 Cel				-25 Cel		BOTTOM	S-PBGA-B153						Not Qualified							.002 Amp
K5A3340YTC-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL		77 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified							.00001 Amp		80 ns
K5A3380YTC-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL		50 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified							.000015 Amp		70 ns
KAD060300B-TLLL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		HYBRID		BALL		40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified							.00002 Amp		70 ns
KAD050300B-TLLL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		HYBRID		BALL		40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified							.00002 Amp		70 ns
KAD100300B-TLLL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		HYBRID		BALL		40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified							.00002 Amp		70 ns
KAD080300B-TLLL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		HYBRID		BALL		40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified							.00002 Amp		70 ns
KAD050300B-TNNL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		HYBRID		BALL		40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified							.00002 Amp		80 ns
KBC00B7A0M-F4050	Samsung	MEMORY CIRCUIT	OTHER	111	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		16777216 words		2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B111		3.1 V	1.4 mm		11 mm	Not Qualified	268435456 bit	2.7 V	SRAM IS ORGANIZED AS 512K X 16; UTRAM IS ORGANIZED AS 4M X 16					11 mm
K5A3340YBC-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL		77 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified							.00001 Amp		70 ns
K5A3240YBC-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL		77 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified							.00001 Amp		80 ns
K5A3340YTC-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL		77 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified							.00001 Amp		70 ns
KAD090300B-TLLL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		HYBRID		BALL		40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified							.00002 Amp		70 ns
K5A3280YBC-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL		50 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified							.000015 Amp		80 ns
KAD060300B-TNNL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		HYBRID		BALL		40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified							.00002 Amp		80 ns
K5A3280YTC-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL		50 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified							.000015 Amp		80 ns
KAD090300B-TNNL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		HYBRID		BALL		40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified							.00002 Amp		80 ns
K5P2881BCM-F070	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		HYBRID		BALL		22 mA			2.6	FLASH+SRAM	2.6		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified							.000015 Amp		70 ns
K5A3380YBC-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL		50 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified							.000015 Amp		70 ns
K5P5781FCM-F055	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL		28 mA			2.8	FLASH+SRAM	2.8		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified							.000001 Amp		55 ns
K5A3240YTC-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL		77 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified							.00001 Amp		80 ns
KAD070300B-TNNL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		HYBRID		BALL		40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified							.00002 Amp		80 ns
K5A3240YBC-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL		77 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified							.00001 Amp		70 ns
KAD080300B-TNNL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		HYBRID		BALL		40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified							.00002 Amp		80 ns
KBC00B7A0M-D4050	Samsung	MEMORY CIRCUIT	OTHER	111	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		16777216 words		2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B111	2	3.1 V	1.4 mm		11 mm	Not Qualified	268435456 bit	2.7 V	SRAM IS ORGANIZED AS 512K X 16; UTRAM IS ORGANIZED AS 4M X 16	e1				11 mm
K5A3380YBC-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL		50 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified							.000015 Amp		80 ns
K5A3240YTC-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL		77 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified							.00001 Amp		70 ns
K5A3380YTC-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL		50 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified							.000015 Amp		80 ns
K5A3280YBC-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL		50 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified							.000015 Amp		70 ns
KAD070300B-TLLL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		HYBRID		BALL		40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified							.00002 Amp		70 ns
K5A3340YBC-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL		77 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified							.00001 Amp		80 ns
KS7308	Samsung	MEMORY CIRCUIT	COMMERCIAL	48	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		2048 words		5			10	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		2KX10	2K	0 Cel		QUAD	S-PQFP-G48		5.25 V	1.6 mm		7 mm	Not Qualified	20480 bit	4.75 V						7 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.