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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
ST25DV04K-JFR6D3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	12	HVSON	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SYNCHRONOUS		4096 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel	4KX1	4K	-40 Cel		DUAL	S-PDSO-N12		5.5 V	.6 mm		3 mm		4096 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		3 mm
CY8C20110-LDX2I	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	16	VQCCN	SQUARE		UNSPECIFIED	YES	1	CMOS		NO LEAD	SYNCHRONOUS		2048 words	3			1	CHIP CARRIER, VERY THIN PROFILE			.5 mm	85 Cel	2KX1	2K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	QUAD	S-XQCC-N16	3	5.25 V	.6 mm		3 mm	Not Qualified	2048 bit	2.4 V	SRAM IS ORGANISED AS 512MB	e4	20	260		3 mm
MR256A08BCMA35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	65 mA	32768 words	3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	32KX8	32K	-40 Cel		BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm		8 mm	Not Qualified	262144 bit	3 V					.007 Amp	8 mm	35 ns
MR256A08BMA35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	65 mA	32768 words	3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	32KX8	32K	0 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm		8 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.007 Amp	8 mm	35 ns
MR256A08BCMA35R	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	65 mA	32768 words	3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	32KX8	32K	-40 Cel		BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm		8 mm	Not Qualified	262144 bit	3 V					.007 Amp	8 mm	35 ns
MR256A08BMA35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	65 mA	32768 words	3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	32KX8	32K	0 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm		8 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.007 Amp	8 mm	35 ns
ST25DV64K-JFR6D3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	12	HVSON	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SYNCHRONOUS		65536 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel	64KX1	64K	-40 Cel		DUAL	S-PDSO-N12		5.5 V	.6 mm		3 mm		65536 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		3 mm
MR0D08BMA45R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	65 mA	131072 words	3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	70 Cel	128KX8	128K	0 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm		8 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.008 Amp	8 mm	45 ns
ST25DV16K-JFR6D3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	12	HVSON	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SYNCHRONOUS		16384 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel	16KX1	16K	-40 Cel		DUAL	S-PDSO-N12		5.5 V	.6 mm		3 mm		16384 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		3 mm
MR2A16AVMA35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		262144 words	3.3		3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	105 Cel	256KX16	256K	-40 Cel		BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm		8 mm	Not Qualified	4194304 bit	3 V			40	260	.028 Amp	8 mm	35 ns
MR2A16ACMA35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		262144 words	3.3		3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	256KX16	256K	-40 Cel		BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm		8 mm	Not Qualified	4194304 bit	3 V			40	260	.028 Amp	8 mm	35 ns
WSF512K16-39H2I	Microsemi	MEMORY CIRCUIT	INDUSTRIAL	66	PGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	ASYNCHRONOUS		524288 words	5			16	GRID ARRAY			2.54 mm	85 Cel	512KX16	512K	-40 Cel	GOLD	PERPENDICULAR	S-CPGA-P66		5.5 V	5.7 mm		35.2 mm	Not Qualified	8388608 bit	4.5 V	SRAM IS ORGANISED AS 512K X 16	e4				35.2 mm
MR256D08BMA45	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	65 mA	32768 words	3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	70 Cel	32KX8	32K	0 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm		8 mm	Not Qualified	262144 bit	3 V			40	260	.008 Amp	8 mm	45 ns
MT29C4G48MAZBAAKQ-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	Other Memory ICs	.5 mm	85 Cel	256MX16	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B168		1.9 V	.75 mm		12 mm	Not Qualified	4294967296 bit	1.7 V		e1				12 mm	25 ns
MR0A08BMA35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	65 mA	131072 words	3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	128KX8	128K	0 Cel		BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm		8 mm	Not Qualified	1048576 bit	3 V					.007 Amp	8 mm	35 ns
MT29C4G96MAZBACJG-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	168	VFBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	Other Memory ICs	.5 mm	85 Cel	256MX16	256M	-25 Cel		BOTTOM	S-PBGA-B168		1.95 V	.9 mm		12 mm	Not Qualified	4294967296 bit	1.7 V	MOBILE LPDDR DEVICE ALSO AVAILABLE		NOT SPECIFIED	NOT SPECIFIED		12 mm	25 ns
MT43A4G40200NFA-S15:A	Micron Technology	MEMORY CIRCUIT	OTHER	896	BGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		4294967296 words	1.2			4	GRID ARRAY			1 mm	105 Cel	4GX4	4G	0 Cel		BOTTOM	S-PBGA-B896		1.26 V	4.2 mm		31 mm		17179869184 bit	1.14 V	IT ALSO OPERATES AT LOGIC OPERATING TEMPERATURE 0 TO 110 DEG CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED		31 mm
MR0A16ACMA35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	165 mA	65536 words	3.3		3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	64KX16	64K	-40 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm		8 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.012 Amp	8 mm	35 ns
MR2A16AVMA35R	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		262144 words	3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.75 mm	105 Cel	256KX16	256K	-40 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm		8 mm		4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
MTFC2GMTEA-WT	Micron Technology		OTHER	153	FBGA	SQUARE		PLASTIC/EPOXY	YES				BALL						1.8/3.3,3/3.3		GRID ARRAY, FINE PITCH	BGA153,14X14,20	Other Memory ICs	.5 mm	85 Cel			-25 Cel		BOTTOM	S-PBGA-B153						Not Qualified	17179869184 bit
WSF512K32-27H2M	Microsemi	MEMORY CIRCUIT	MILITARY	66	PGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	ASYNCHRONOUS		524288 words	5			32	GRID ARRAY			2.54 mm	125 Cel	512KX32	512K	-55 Cel	GOLD	PERPENDICULAR	S-CPGA-P66		5.5 V	5.7 mm		35.2 mm	Not Qualified	16777216 bit	4.5 V	SRAM IS ORGANISED AS 512K X 32	e4				35.2 mm
MR0A16AMA35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	155 mA	65536 words	3.3		3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	64KX16	64K	0 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm		8 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.012 Amp	8 mm	35 ns
MTFC16GLTAM-WT	Micron Technology		OTHER	153	FBGA	SQUARE		PLASTIC/EPOXY	YES				BALL						1.8/3.3,3/3.3		GRID ARRAY, FINE PITCH	BGA153,14X14,20	Other Memory ICs	.5 mm	85 Cel			-25 Cel		BOTTOM	S-PBGA-B153						Not Qualified	137438953472 bit
MTFC32GLTDM-WT	Micron Technology		OTHER	153	FBGA	SQUARE		PLASTIC/EPOXY	YES				BALL						1.8/3.3,3/3.3		GRID ARRAY, FINE PITCH	BGA153,14X14,20	Other Memory ICs	.5 mm	85 Cel			-25 Cel		BOTTOM	S-PBGA-B153						Not Qualified	274877906944 bit
SAA4955HL	NXP Semiconductors	MEMORY CIRCUIT	COMMERCIAL	44	QFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	70 mA	245772 words	3.3		3.3	12	FLATPACK	QFP44,.47SQ,32	Other Memory ICs	.8 mm	70 Cel	245772X12	245772	0 Cel	Tin (Sn)	QUAD	S-PQFP-G44		3.6 V				Not Qualified	2949264 bit	3 V	IT ALSO REQUIRES 3 TO 5.5V SUPPLY	e3			.01 Amp		21 ns
WSF128K16-37G1UM	Microsemi	MEMORY CIRCUIT	MILITARY	68	QFP	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		GULL WING	ASYNCHRONOUS		131072 words	5			16	FLATPACK			1.27 mm	125 Cel	128KX16	128K	-55 Cel		QUAD	S-CQFP-G68		5.5 V	3.56 mm		23.88 mm		2097152 bit	4.5 V	SRAM IS ORGANISED AS 128K X 32					23.88 mm
CY8C20140-LDX2I	Cypress Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	16	VQCCN	SQUARE		UNSPECIFIED	YES	1	CMOS		NO LEAD	SYNCHRONOUS		2048 words	3			1	CHIP CARRIER, VERY THIN PROFILE			.5 mm	85 Cel	2KX1	2K	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	S-XQCC-N16	3	5.25 V	.6 mm		3 mm	Not Qualified	2048 bit	2.4 V	SRAM IS ORGANISED AS 512MB	e4	20	260		3 mm
CY8C20180-LDX2I	Cypress Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	16	VQCCN	SQUARE		UNSPECIFIED	YES	1	CMOS		NO LEAD	SYNCHRONOUS		2048 words	3			1	CHIP CARRIER, VERY THIN PROFILE			.5 mm	85 Cel	2KX1	2K	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	S-XQCC-N16	3	5.25 V	.6 mm		3 mm	Not Qualified	2048 bit	2.4 V	SRAM IS ORGANISED AS 512MB	e4	20	260		3 mm
MT29C4G48MAZBBAKB-48IT	Micron Technology	MEMORY CIRCUIT		168	VFBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words	1.8	FLASH+LPDDR		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20		.5 mm	85 Cel	256MX16	256M	-40 Cel		BOTTOM	S-PBGA-B168		1.95 V	.8 mm		12 mm		4294967296 bit	1.7 V	IT IS ALSO HAVING 2GBIT (X 32) LPDDR		NOT SPECIFIED	NOT SPECIFIED		12 mm
5962H1321201VXC	Defense Logistics Agency	MEMORY CIRCUIT	AUTOMOTIVE	76	QFF	SQUARE	1M Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT	SYNCHRONOUS		1048576 words	3.3			16	FLATPACK	QFL76,.1.2SQ		1.27 mm	125 Cel	1MX16	1M	-40 Cel		QUAD	S-CQFP-F76		3.6 V	4.713 mm		29.21 mm	Qualified	16777216 bit	3 V						29.21 mm
MT29C4G48MAZBAAKQ-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	168	VFBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	256MX16	256M	-25 Cel		BOTTOM	S-PBGA-B168		1.95 V	.75 mm		12 mm		4294967296 bit	1.7 V	MOBILE LPDDR DEVICE ALSO AVAILABLE		NOT SPECIFIED	NOT SPECIFIED		12 mm
NAND08GAH0FZC5E	Micron Technology		OTHER	153	FBGA	SQUARE		PLASTIC/EPOXY	YES		CMOS		BALL						1.8/3.3,3.3		GRID ARRAY, FINE PITCH	BGA153,14X14,20	Other Memory ICs	.5 mm	85 Cel			-25 Cel		BOTTOM	S-PBGA-B153						Not Qualified	8589934592 bit
MT29C4G96MAZAPCJG-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	256MX16	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B168		1.95 V	.9 mm		12 mm		4294967296 bit	1.7 V		e1				12 mm
SNC54AS870FH	Texas Instruments		MILITARY	28	QCCN	SQUARE		CERAMIC	YES		TTL	MIL-STD-883 Class B (Modified)	NO LEAD								CHIP CARRIER	LCC28,.45SQ	Other Memory ICs	1.27 mm	125 Cel			-55 Cel		QUAD	S-XQCC-N28						Not Qualified
SNJ54ALS871FK	Texas Instruments		MILITARY	28	QCCN	SQUARE		CERAMIC	YES		TTL	38535Q/M;38534H;883B	NO LEAD								CHIP CARRIER	LCC28,.45SQ	Other Memory ICs	1.27 mm	125 Cel			-55 Cel		QUAD	S-XQCC-N28						Not Qualified
SN54AS870FH	Texas Instruments		MILITARY	28	QCCN	SQUARE		CERAMIC	YES		TTL		NO LEAD								CHIP CARRIER	LCC28,.45SQ	Other Memory ICs	1.27 mm	125 Cel			-55 Cel		QUAD	S-XQCC-N28						Not Qualified
SNJ54AS871FH	Texas Instruments		MILITARY	28	QCCN	SQUARE		CERAMIC	YES		TTL	38535Q/M;38534H;883B	NO LEAD								CHIP CARRIER	LCC28,.45SQ	Other Memory ICs	1.27 mm	125 Cel			-55 Cel		QUAD	S-XQCC-N28						Not Qualified
TACT2152-25FN	Texas Instruments	MEMORY CIRCUIT	COMMERCIAL	28	QCCJ	SQUARE		PLASTIC/EPOXY	YES		CMOS		J BEND			2048 words	5		5	8	CHIP CARRIER	LDCC28,.5SQ	SRAMs	1.27 mm	70 Cel	2KX8	2K	0 Cel		QUAD	S-PQCC-J28						Not Qualified	16384 bit				NOT SPECIFIED	NOT SPECIFIED			25 ns
SN74ALS871FN3	Texas Instruments		COMMERCIAL	28	QCCJ	SQUARE		PLASTIC/EPOXY	YES		TTL		J BEND								CHIP CARRIER	LDCC28,.5SQ	Other Memory ICs	1.27 mm	70 Cel			0 Cel		QUAD	S-PQCC-J28
SNJ54HC670FK	Texas Instruments		MILITARY	20	QCCN	SQUARE		CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD						2/6		CHIP CARRIER	LCC20,.35SQ	Other Memory ICs	1.27 mm	125 Cel			-55 Cel		QUAD	S-XQCC-N20						Not Qualified
SN54HC670FK	Texas Instruments		MILITARY	20	QCCN	SQUARE		CERAMIC	YES		CMOS		NO LEAD						2/6		CHIP CARRIER	LCC20,.35SQ	Other Memory ICs	1.27 mm	125 Cel			-55 Cel		QUAD	S-XQCC-N20						Not Qualified
SN74AS8834GB	Texas Instruments	MEMORY CIRCUIT	COMMERCIAL	156	PGA	SQUARE		CERAMIC, METAL-SEALED COFIRED	NO	1	TTL		PIN/PEG	SYNCHRONOUS		64 words	5		2,5	40	GRID ARRAY	PGA156M,15X15MOD	Other Memory ICs	2.54 mm	70 Cel	64X40	64	0 Cel		PERPENDICULAR	S-CPGA-P156		5.5 V				Not Qualified	2560 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED
SN74LS170FN3	Texas Instruments		COMMERCIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES		TTL		J BEND				5		5		CHIP CARRIER	LDCC20,.4SQ	Other Memory ICs	1.27 mm	70 Cel			0 Cel		QUAD	S-PQCC-J20
5962-9564302QXA	Texas Instruments	VIDEO DRAM	MILITARY	68	PGA	SQUARE		CERAMIC	NO		CMOS	38535Q/M;38534H;883B	PIN/PEG		225 mA	262144 words	5		5	16	GRID ARRAY	PGA68,9X9	Other Memory ICs	2.54 mm	125 Cel	256KX16	256K	-55 Cel		PERPENDICULAR	S-XPGA-P68						Not Qualified	4194304 bit						.012 Amp		70 ns
SNJ54AS870FH	Texas Instruments		MILITARY	28	QCCN	SQUARE		CERAMIC	YES		TTL	38535Q/M;38534H;883B	NO LEAD								CHIP CARRIER	LCC28,.45SQ	Other Memory ICs	1.27 mm	125 Cel			-55 Cel		QUAD	S-XQCC-N28						Not Qualified
SN74ACT2151-22FN	Texas Instruments	MEMORY CIRCUIT	COMMERCIAL	28	QCCJ	SQUARE		PLASTIC/EPOXY	YES		CMOS		J BEND		125 mA	1024 words	5		5	12	CHIP CARRIER	LDCC28,.5SQ	SRAMs	1.27 mm	70 Cel	1KX12	1K	0 Cel		QUAD	S-PQCC-J28						Not Qualified	12288 bit				NOT SPECIFIED	NOT SPECIFIED	.105 Amp		22 ns
CC2544RHBR	Texas Instruments	MEMORY CIRCUIT	AUTOMOTIVE		HVQCCN	SQUARE		PLASTIC/EPOXY	YES				NO LEAD								CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	LCC32,.2SQ,20		.5 mm	125 Cel			-40 Cel	NICKEL PALLADIUM GOLD SILVER	QUAD	S-PQCC-N32	3	3.6 V	1 mm	2496 MHz	5 mm			2 V		e4	30	260		5 mm
TACT2153-28FN	Texas Instruments	MEMORY CIRCUIT	COMMERCIAL	28	QCCJ	SQUARE		PLASTIC/EPOXY	YES		CMOS		J BEND			1024 words				11	CHIP CARRIER	LDCC28,.5SQ	SRAMs	1.27 mm	70 Cel	1KX11	1K	0 Cel		QUAD	S-PQCC-J28						Not Qualified	11264 bit				NOT SPECIFIED	NOT SPECIFIED			25 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.