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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length	Maximum Access Time
M8803F3Y-15T1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING			131072 words	5			8	FLATPACK			.65 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQFP-G52	5.5 V	2.35 mm		10 mm	Not Qualified	1048576 bit	4.5 V					10 mm
PSD8131V70U1T	STMicroelectronics	MEMORY CIRCUIT		64		SQUARE	PLASTIC/EPOXY	YES			GULL WING								FLATPACK									QUAD	S-PQFP-G64					Not Qualified
M8803F2Y-15K1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND			131072 words	5			8	CHIP CARRIER			1.27 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQCC-J52	5.5 V	4.57 mm		19.1262 mm	Not Qualified	1048576 bit	4.5 V					19.1262 mm
DSM2150F5V-12T6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	80	TFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words	3.3			16	FLATPACK, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	256KX16	256K	-40 Cel		QUAD	S-PQFP-G80	3.6 V	1.2 mm		12 mm	Not Qualified	4194304 bit	3 V	ALSO CONTAINS 32K BYTE OF SECONDARY FLASH MEMORY				12 mm
PSD8131V70M1T	STMicroelectronics	MEMORY CIRCUIT		52		SQUARE	PLASTIC/EPOXY	YES			GULL WING								FLATPACK									QUAD	S-PQFP-G52					Not Qualified
PSD8131V90JT	STMicroelectronics	MEMORY CIRCUIT		54		SQUARE	PLASTIC/EPOXY	YES			J BEND								CHIP CARRIER									QUAD	S-PQCC-J54					Not Qualified
M8813F3Y-15K1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND			131072 words	5			8	CHIP CARRIER			1.27 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQCC-J52	5.5 V	4.57 mm		19.1262 mm	Not Qualified	1048576 bit	4.5 V					19.1262 mm
M8803F3Y-15K1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND			131072 words	5			8	CHIP CARRIER			1.27 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQCC-J52	5.5 V	4.57 mm		19.1262 mm	Not Qualified	1048576 bit	4.5 V					19.1262 mm
DSM2180F3V-15T6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS		131072 words	3.3			8	FLATPACK			.65 mm	85 Cel	128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	S-PQFP-G52	3.6 V	2.35 mm		10 mm	Not Qualified	1048576 bit	3 V		e4			10 mm
PSD8131V70MT	STMicroelectronics	MEMORY CIRCUIT		52		SQUARE	PLASTIC/EPOXY	YES			GULL WING								FLATPACK									QUAD	S-PQFP-G52					Not Qualified
PSD8131V12JT	STMicroelectronics	MEMORY CIRCUIT		54		SQUARE	PLASTIC/EPOXY	YES			J BEND								CHIP CARRIER									QUAD	S-PQCC-J54					Not Qualified
Z8038C1V	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	ASYNCHRONOUS	250 mA	128 words	5		5	8	CHIP CARRIER	LDCC44,.7SQ	FIFOs	1.27 mm	70 Cel	128X8	128	0 Cel	TIN LEAD	QUAD	S-PQCC-J44	5.25 V	4.7 mm	4 MHz	16.5862 mm	Not Qualified	1024 bit	4.75 V		e0			16.5862 mm
PSD8131V90MT	STMicroelectronics	MEMORY CIRCUIT		52		SQUARE	PLASTIC/EPOXY	YES			GULL WING								FLATPACK									QUAD	S-PQFP-G52					Not Qualified
DSM2180F3V-15K6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	ASYNCHRONOUS		131072 words	3.3			8	CHIP CARRIER			1.27 mm	85 Cel	128KX8	128K	-40 Cel	MATTE TIN	QUAD	S-PQCC-J52	3.6 V	4.57 mm		19.1262 mm	Not Qualified	1048576 bit	3 V		e3			19.1262 mm
Z8038AC6V	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	ASYNCHRONOUS	250 mA	128 words	5		5	8	CHIP CARRIER	LDCC44,.7SQ	FIFOs	1.27 mm	85 Cel	128X8	128	-40 Cel	TIN LEAD	QUAD	S-PQCC-J44	5.25 V	4.7 mm	6 MHz	16.5862 mm	Not Qualified	1024 bit	4.75 V		e0			16.5862 mm
DSM2190F4V-15K6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words	3.3			8	CHIP CARRIER			1.27 mm	85 Cel	256KX8	256K	-40 Cel	MATTE TIN	QUAD	S-PQCC-J52	3.6 V	4.57 mm		19.1262 mm	Not Qualified	2097152 bit	3 V	ALSO CONTAINS 32K X 8 SECONDARY FLASH MEMORY	e3			19.1262 mm
ST25DV04K-IER6D3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	12	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS		4096 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel	4KX1	4K	-40 Cel		DUAL	S-PDSO-N12	5.5 V	.6 mm		3 mm		4096 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED	3 mm
ST25DV16K-IER6D3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	12	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS		16384 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel	16KX1	16K	-40 Cel		DUAL	S-PDSO-N12	5.5 V	.6 mm		3 mm		16384 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED	3 mm
ST25DV64K-IER6D3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	12	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS		65536 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel	64KX1	64K	-40 Cel		DUAL	S-PDSO-N12	5.5 V	.6 mm		3 mm		65536 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED	3 mm
SAB-R3020-25-N	Infineon Technologies		COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND		70 mA		5		5		CHIP CARRIER	LDCC68,1.0SQ	Other Memory ICs	1.27 mm	70 Cel			0 Cel	Tin/Lead (Sn/Pb)	QUAD	S-PQCC-J68					Not Qualified				e0
SAB-R2020-16-N	Infineon Technologies		COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND		70 mA		5		5		CHIP CARRIER	LDCC68,1.0SQ	Other Memory ICs	1.27 mm	70 Cel			0 Cel	Tin/Lead (Sn/Pb)	QUAD	S-PQCC-J68					Not Qualified				e0
S72NS128RD0KHFG40	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.65 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B128	1.95 V	1.05 mm		12 mm	Not Qualified	134217728 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16				12 mm
S72NS256RD0AHBG43	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133	1.95 V	1 mm		8 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16				8 mm
S72NS128RD0AHBG40	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133	1.95 V	1 mm		8 mm	Not Qualified	134217728 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16				8 mm
S72XS128RD0AHBJD3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133	1.95 V	1 mm		8 mm	Not Qualified	134217728 bit	1.7 V					8 mm
S72NS256RD0AHBM40	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133	1.95 V	1 mm		8 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16				8 mm
S72NS256RD0AHBG40	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133	1.95 V	1 mm		8 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16				8 mm
S72NS256RD0KHFG43	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.65 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B128	1.95 V	1.05 mm		12 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16				12 mm
S72NS128RD0KHFL40	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.65 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B128	1.95 V	1.05 mm		12 mm	Not Qualified	134217728 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16				12 mm
S72XS256RD0AHBGD0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133	1.95 V	1 mm		8 mm	Not Qualified	268435456 bit	1.7 V					8 mm
S71GL064NB0BFW0K0	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL				3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	S-PBGA-B56					Not Qualified								90 ns
S72VS256RE0AHBJH3	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-40 Cel		BOTTOM	S-PBGA-B133	1.95 V	1 mm		8 mm		268435456 bit	1.7 V					8 mm
S72NS256RD0AHBL40	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133	1.95 V	1 mm		8 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16				8 mm
S72XS256RE0AHBH20	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-40 Cel		BOTTOM	S-PBGA-B133	1.95 V	1 mm		8 mm		268435456 bit	1.7 V					8 mm
S72NS256RD0KHFG40	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.65 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B128	1.95 V	1.05 mm		12 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16				12 mm
S72XS128RD0AHBHE3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133	1.95 V	1 mm		8 mm		134217728 bit	1.7 V					8 mm
S72NS256RD0KHFL03	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.65 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B128	1.95 V	1.05 mm		12 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16				12 mm
S72XS256RE0AHBJ20	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-40 Cel		BOTTOM	S-PBGA-B133	1.95 V	1 mm		8 mm		268435456 bit	1.7 V					8 mm
S72VS256RE0AHBHH3	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-40 Cel		BOTTOM	S-PBGA-B133	1.95 V	1 mm		8 mm		268435456 bit	1.7 V					8 mm
S72XS256RE0AHBHE0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133	1.95 V	1 mm		8 mm		268435456 bit	1.7 V					8 mm
S72NS512RE0AHGGC3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL			33554432 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	32MX16	32M	-25 Cel		BOTTOM	S-PBGA-B133					Not Qualified	536870912 bit
S72NS256RD0KHFL00	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.65 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B128	1.95 V	1.05 mm		12 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16				12 mm
S71GL032NA0BHW0F2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL				3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	S-PBGA-B56					Not Qualified								90 ns
S72NS256RD0AHBM03	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133	1.95 V	1 mm		8 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16				8 mm
S72XS128RD0AHBJD0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133	1.95 V	1 mm		8 mm	Not Qualified	134217728 bit	1.7 V					8 mm
S72XS256RE0AHBH23	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-40 Cel		BOTTOM	S-PBGA-B133	1.95 V	1 mm		8 mm		268435456 bit	1.7 V					8 mm
S72XS256RD0AHBHE3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133	1.95 V	1 mm		8 mm	Not Qualified	268435456 bit	1.7 V					8 mm
S72NS256RD0KHFM40	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.65 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B128	1.95 V	1.05 mm		12 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16				12 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.