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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time
S72NS512RE0KHFG43	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		33554432 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs		.65 mm	85 Cel		32MX16	32M	-25 Cel		BOTTOM	S-PBGA-B128		1.95 V	1.05 mm			12 mm	Not Qualified	536870912 bit	1.7 V	DRAM IS ORGANISED AS 16M X 16						12 mm
S72XS128RD0AHBHD0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		8388608 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm			8 mm		134217728 bit	1.7 V							8 mm
S72XS256RD0AHBJE0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		16777216 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs		.5 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm			8 mm	Not Qualified	268435456 bit	1.7 V							8 mm
S72XS128RD0AHBGD3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		8388608 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs		.5 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm			8 mm	Not Qualified	134217728 bit	1.7 V							8 mm
S72XS128RD0AHBH23	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		8388608 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-40 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm			8 mm		134217728 bit	1.7 V							8 mm
S72NS128RD0KHFM03	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		8388608 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs		.65 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B128		1.95 V	1.05 mm			12 mm	Not Qualified	134217728 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16						12 mm
S72XS256RD0AHBGD3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		16777216 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs		.5 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm			8 mm	Not Qualified	268435456 bit	1.7 V							8 mm
S72XS128RD0AHBJ20	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		8388608 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-40 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm			8 mm		134217728 bit	1.7 V							8 mm
S72NS128RD0AHBL40	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		8388608 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs		.5 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm			8 mm	Not Qualified	134217728 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16						8 mm
S72NS256RD0AHBM00	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		16777216 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs		.5 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm			8 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16						8 mm
S72VS256RE0AHBHH0	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		16777216 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		16MX16	16M	-40 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm			8 mm		268435456 bit	1.7 V							8 mm
S72XS128RD0AHBJH0	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		8388608 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-40 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm			8 mm		134217728 bit	1.7 V							8 mm
S72NS128RD0AHBM43	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		8388608 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs		.5 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm			8 mm	Not Qualified	134217728 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16						8 mm
S72XS256RE0AHBHD0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		16777216 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm			8 mm		268435456 bit	1.7 V							8 mm
S71GL064NB0BFW0P3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL						3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA56,8X8,32	Other Memory ICs		.8 mm	85 Cel				-25 Cel		BOTTOM	S-PBGA-B56							Not Qualified										90 ns
S72XS256RE0AHBHD3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		16777216 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm			8 mm		268435456 bit	1.7 V							8 mm
S72XS256RD0AHBJD0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		16777216 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs		.5 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm			8 mm	Not Qualified	268435456 bit	1.7 V							8 mm
S72NS256RD0KHFM00	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		16777216 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs		.65 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B128		1.95 V	1.05 mm			12 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16						12 mm
S72XS128RD0AHBGD0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		8388608 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs		.5 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm			8 mm	Not Qualified	134217728 bit	1.7 V							8 mm
S72XS256RD0AHBGE3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		16777216 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs		.5 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm			8 mm	Not Qualified	268435456 bit	1.7 V							8 mm
S72NS256RD0KHFG03	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		16777216 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs		.65 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B128		1.95 V	1.05 mm			12 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16						12 mm
S72XS128RD0AHBJE0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		8388608 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs		.5 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm			8 mm	Not Qualified	134217728 bit	1.7 V							8 mm
S72NS512RE0KHFG40	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		33554432 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs		.65 mm	85 Cel		32MX16	32M	-25 Cel		BOTTOM	S-PBGA-B128		1.95 V	1.05 mm			12 mm	Not Qualified	536870912 bit	1.7 V	DRAM IS ORGANISED AS 16M X 16						12 mm
S72NS128RD0AHBL43	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		8388608 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs		.5 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm			8 mm	Not Qualified	134217728 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16						8 mm
S72NS512RE0KHFL43	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		33554432 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs		.65 mm	85 Cel		32MX16	32M	-25 Cel		BOTTOM	S-PBGA-B128		1.95 V	1.05 mm			12 mm	Not Qualified	536870912 bit	1.7 V	DRAM IS ORGANISED AS 16M X 16						12 mm
S72XS256RE0AHBHE3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		16777216 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm			8 mm		268435456 bit	1.7 V							8 mm
S72VS256RE0AHBJH0	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		16777216 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		16MX16	16M	-40 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm			8 mm		268435456 bit	1.7 V							8 mm
S72XS128RD0AHBH13	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		8388608 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm			8 mm		134217728 bit	1.7 V							8 mm
S72XS256RD0AHBHD3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		16777216 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs		.5 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm			8 mm	Not Qualified	268435456 bit	1.7 V							8 mm
S72XS256RD0AHBJE3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		16777216 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs		.5 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm			8 mm	Not Qualified	268435456 bit	1.7 V							8 mm
S75WS256PEFKFFLW3	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		16777216 words		1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.65 mm	85 Cel		16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B128		1.95 V	1.15 mm			12 mm	Not Qualified	268435456 bit	1.7 V		e1					12 mm
S72NS256RD0KHFL40	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		16777216 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs		.65 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B128		1.95 V	1.05 mm			12 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16						12 mm
XCCACEM64BG388I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	388	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	240 mA	4194304 words		1.8		1.8,3.3	16	GRID ARRAY	BGA388,26X26,50	Flash Memories		1.27 mm	85 Cel		4MX16	4M	-40 Cel	TIN LEAD	BOTTOM	S-PBGA-B388		1.89 V	2.87 mm	1000000 Write/Erase Cycles	133 MHz	35 mm	Not Qualified	67108864 bit	1.71 V		e0			NOR TYPE		35 mm
XCCACEM16BG388I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	388	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	240 mA	1048576 words		1.8		1.8,3.3	16	GRID ARRAY	BGA388,26X26,50	Flash Memories	20	1.27 mm	85 Cel		1MX16	1M	-40 Cel		BOTTOM	S-PBGA-B388	1	1.89 V	2.87 mm	1000000 Write/Erase Cycles		35 mm	Not Qualified	16777216 bit	1.71 V					NOR TYPE		35 mm
XCCACEM32BG388I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	388	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	240 mA	2097152 words		1.8		1.8,3.3	16	GRID ARRAY	BGA388,26X26,50	Flash Memories	20	1.27 mm	85 Cel		2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	S-PBGA-B388	1	1.89 V	2.87 mm	1000000 Write/Erase Cycles		35 mm	Not Qualified	33554432 bit	1.71 V		e0			NOR TYPE		35 mm
XQR18V04VQ44N	Xilinx	CONFIGURATION MEMORY	OTHER	44	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		50 mA					2.5/3.3,3.3		FLATPACK	TQFP44,.47SQ,32	Flash Memories	10	.8 mm	100 Cel				-55 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3			2000 Write/Erase Cycles	20 MHz		Not Qualified	4194304 bit			e0	30	240	NOR TYPE	.02 Amp
79R3020-40J	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND			90 mA			5		5		CHIP CARRIER	LDCC68,1.0SQ	Other Memory ICs		1.27 mm	70 Cel				0 Cel	TIN LEAD	QUAD	S-PQCC-J68	1						Not Qualified				e0	20	225
UPD487000GC-40	Renesas Electronics		COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING						3.3		3.3		FLATPACK	QFP100,.63SQ,20	Other Memory ICs		.5 mm	70 Cel				0 Cel	Tin/Lead (Sn/Pb)	QUAD	S-PQFP-G100							Not Qualified				e0						45 ns
IDT79R3020-12G	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	68	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG						5		5		GRID ARRAY	PGA68,11X11	Other Memory ICs		2.54 mm	70 Cel				0 Cel	TIN LEAD	PERPENDICULAR	S-XPGA-P68							Not Qualified				e0
79R3020-25G	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	68	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG			70 mA			5		5		GRID ARRAY	PGA68,11X11	Other Memory ICs		2.54 mm	70 Cel				0 Cel	TIN LEAD	PERPENDICULAR	S-XPGA-P68							Not Qualified				e0
79R3020-33G	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	68	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG			80 mA			5		5		GRID ARRAY	PGA68,11X11	Other Memory ICs		2.54 mm	70 Cel				0 Cel	TIN LEAD	PERPENDICULAR	S-XPGA-P68							Not Qualified				e0
79R3020-16J	Renesas Electronics		COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND			50 mA			5		5		CHIP CARRIER	LDCC68,1.0SQ	Other Memory ICs		1.27 mm	70 Cel				0 Cel	TIN LEAD	QUAD	S-PQCC-J68	1						Not Qualified				e0	20	225
79R3020-25J	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND			70 mA			5		5		CHIP CARRIER	LDCC68,1.0SQ	Other Memory ICs		1.27 mm	70 Cel				0 Cel	TIN LEAD	QUAD	S-PQCC-J68	1						Not Qualified				e0	20	225
79R3020-40G	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	68	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG			90 mA			5		5		GRID ARRAY	PGA68,11X11	Other Memory ICs		2.54 mm	70 Cel				0 Cel	TIN LEAD	PERPENDICULAR	S-XPGA-P68							Not Qualified				e0
R8A66120FFA	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	48	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	150 mA	2097152 words		3.3		3.3	4	FLATPACK, LOW PROFILE, FINE PITCH	QFP48,.35SQ,20	Other Memory ICs		.5 mm	70 Cel		2MX4	2M	0 Cel		QUAD	S-PQFP-G48		3.6 V	1.7 mm			7 mm	Not Qualified	8388608 bit	3 V							7 mm	6 ns
M66287FP	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		786432 words		1.8			8	FLATPACK, LOW PROFILE, FINE PITCH				.5 mm	70 Cel		768KX8	768K	0 Cel		QUAD	S-PQFP-G100		1.98 V	1.7 mm			14 mm	Not Qualified	6291456 bit	1.62 V							14 mm
79R3020-33GB	Renesas Electronics	MEMORY CIRCUIT	MILITARY	68	PGA	SQUARE	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	PIN/PEG			80 mA			5		5		GRID ARRAY	PGA68,11X11	Other Memory ICs		2.54 mm	125 Cel				-55 Cel	TIN LEAD	PERPENDICULAR	S-XPGA-P68							Not Qualified				e0
UPD46128953F1-E15X-EB1	Renesas Electronics		OTHER	127	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL			55 mA	4194304 words	COMMON	1.8		1.8	32	GRID ARRAY, FINE PITCH	BGA127,14X14,32	Other Memory ICs		.8 mm	85 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM	S-PBGA-B127					66 MHz		Not Qualified	134217728 bit

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.