Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Sector Size (Words) | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Toggle Bit | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | No. of Sectors/Size | Command User Interface | Terminal Finish | I2C Control Byte | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Serial Bus Type | Boot Block | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | Page Size (words) | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Type | Maximum Standby Current | Interleaved Burst Length | Length | Common Flash Interface | Maximum Access Time | Programming Voltage (V) | Data Polling |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Micron Technology |
MEMORY CIRCUIT |
COMMERCIAL |
RECTANGULAR |
UNSPECIFIED |
1 |
CMOS |
ASYNCHRONOUS |
536870912000 words |
8 |
70 Cel |
500GX8 |
500G |
0 Cel |
4294967296000 bit |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
COMMERCIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
4140 mA |
268435456 words |
COMMON |
1.5 |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
70 Cel |
3-STATE |
256MX72 |
256M |
0 Cel |
DUAL |
R-PDMA-N240 |
667 MHz |
Not Qualified |
19327352832 bit |
.09 Amp |
||||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
COMMERCIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
4266 mA |
268435456 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
70 Cel |
3-STATE |
256MX72 |
256M |
0 Cel |
DUAL |
R-PDMA-N240 |
267 MHz |
Not Qualified |
19327352832 bit |
.5 ns |
||||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
67108864 words |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
64MX72 |
64M |
0 Cel |
DUAL |
R-PDMA-N184 |
166 MHz |
Not Qualified |
4831838208 bit |
.072 Amp |
.7 ns |
||||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
COMMERCIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
5832 mA |
2147483648 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
70 Cel |
3-STATE |
2GX72 |
2G |
0 Cel |
DUAL |
R-PDMA-N240 |
266 MHz |
Not Qualified |
154618822656 bit |
.576 Amp |
.5 ns |
|||||||||||||||||||||||||||||||||||||||||
Micron Technology |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
67108864 words |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
64MX72 |
64M |
0 Cel |
DUAL |
R-PDMA-N184 |
133 MHz |
Not Qualified |
4831838208 bit |
.072 Amp |
.75 ns |
|||||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
COMMERCIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2763 mA |
134217728 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
70 Cel |
3-STATE |
128MX72 |
128M |
0 Cel |
DUAL |
R-PDMA-N240 |
400 MHz |
Not Qualified |
9663676416 bit |
.126 Amp |
.4 ns |
|||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
67108864 words |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
64MX72 |
64M |
0 Cel |
DUAL |
R-PDMA-N184 |
133 MHz |
Not Qualified |
4831838208 bit |
.072 Amp |
.75 ns |
||||||||||||||||||||||||||||||||||||||||||
Micron Technology |
MEMORY CIRCUIT |
COMMERCIAL |
66 |
LFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
95 mA |
2097152 words |
FLASH+SRAM |
1.8/2 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA66,8X12,32 |
Other Memory ICs |
.8 mm |
70 Cel |
2MX16 |
2M |
0 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B66 |
2.2 V |
1.4 mm |
8 mm |
Not Qualified |
33554432 bit |
1.65 V |
ALSO CONTAINS 256K X 16 SRAM |
e0 |
.000001 Amp |
12 mm |
95 ns |
|||||||||||||||||||||||||||||||||||
Micron Technology |
MEMORY CIRCUIT |
COMMERCIAL |
144 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
16777216 words |
3.3 |
16 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
16MX16 |
16M |
0 Cel |
DUAL |
R-XDMA-N144 |
3.6 V |
Not Qualified |
268435456 bit |
3 V |
FLASH MEMORY IS ORGANISED AS 4M X 64 |
|||||||||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
COMMERCIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
4266 mA |
268435456 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
70 Cel |
3-STATE |
256MX72 |
256M |
0 Cel |
DUAL |
R-PDMA-N240 |
267 MHz |
Not Qualified |
19327352832 bit |
.5 ns |
||||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
67108864 words |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
64MX72 |
64M |
0 Cel |
DUAL |
R-PDMA-N184 |
133 MHz |
Not Qualified |
4831838208 bit |
.072 Amp |
.75 ns |
||||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
33554432 words |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N184 |
133 MHz |
Not Qualified |
2415919104 bit |
.036 Amp |
.75 ns |
||||||||||||||||||||||||||||||||||||||||||
Micron Technology |
MEMORY CIRCUIT |
COMMERCIAL |
66 |
LFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
95 mA |
2097152 words |
FLASH+SRAM |
1.8/2 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA66,8X12,32 |
Other Memory ICs |
.8 mm |
70 Cel |
2MX16 |
2M |
0 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B66 |
2.2 V |
1.4 mm |
8 mm |
Not Qualified |
33554432 bit |
1.65 V |
ALSO CONTAINS 256K X 16 SRAM |
e0 |
.000001 Amp |
12 mm |
110 ns |
|||||||||||||||||||||||||||||||||||
|
Micron Technology |
COMMERCIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2070 mA |
67108864 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
55 Cel |
3-STATE |
64MX72 |
64M |
0 Cel |
DUAL |
R-PDMA-N240 |
200 MHz |
Not Qualified |
4831838208 bit |
.045 Amp |
.6 ns |
|||||||||||||||||||||||||||||||||||||||||
Micron Technology |
VIDEO DRAM |
COMMERCIAL |
40 |
TSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
170 mA |
262144 words |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP40/44,.46,32 |
Other Memory ICs |
.8 mm |
70 Cel |
256KX8 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G40 |
Not Qualified |
2097152 bit |
e0 |
.01 Amp |
80 ns |
|||||||||||||||||||||||||||||||||||||||||||
Micron Technology |
MEMORY CIRCUIT |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
60 mA |
65536 words |
5 |
5 |
4 |
IN-LINE |
DIP24,.4 |
Other Memory ICs |
2.54 mm |
70 Cel |
64KX4 |
64K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T24 |
Not Qualified |
262144 bit |
e0 |
.002 Amp |
120 ns |
|||||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
COMMERCIAL |
200 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
4050 mA |
67108864 words |
COMMON |
2.6 |
2.6 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM200,24 |
Other Memory ICs |
.6 mm |
70 Cel |
3-STATE |
64MX72 |
64M |
0 Cel |
DUAL |
R-PDMA-N200 |
200 MHz |
Not Qualified |
4831838208 bit |
.045 Amp |
.7 ns |
|||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
COMMERCIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
5040 mA |
134217728 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
55 Cel |
3-STATE |
128MX72 |
128M |
0 Cel |
DUAL |
R-PDMA-N240 |
333 MHz |
Not Qualified |
9663676416 bit |
.09 Amp |
.45 ns |
|||||||||||||||||||||||||||||||||||||||||
Micron Technology |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
67108864 words |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
64MX72 |
64M |
0 Cel |
DUAL |
R-PDMA-N184 |
133 MHz |
Not Qualified |
4831838208 bit |
.072 Amp |
.75 ns |
|||||||||||||||||||||||||||||||||||||||||||
Micron Technology |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
33554432 words |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N184 |
133 MHz |
Not Qualified |
2415919104 bit |
.036 Amp |
.75 ns |
|||||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
COMMERCIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
5400 mA |
134217728 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
70 Cel |
3-STATE |
128MX72 |
128M |
0 Cel |
DUAL |
R-PDMA-N240 |
400 MHz |
Not Qualified |
9663676416 bit |
.126 Amp |
||||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
3780 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
133 MHz |
Not Qualified |
1207959552 bit |
.036 Amp |
5.4 ns |
|||||||||||||||||||||||||||||||||||||||||
Micron Technology |
MEMORY CIRCUIT |
COMMERCIAL |
40 |
TSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
130 mA |
262144 words |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP40/44,.46,32 |
Other Memory ICs |
.8 mm |
70 Cel |
256KX8 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G40 |
Not Qualified |
2097152 bit |
e0 |
.01 Amp |
100 ns |
|||||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
5040 mA |
134217728 words |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
128MX72 |
128M |
0 Cel |
DUAL |
R-PDMA-N184 |
133 MHz |
Not Qualified |
9663676416 bit |
.09 Amp |
.75 ns |
|||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
COMMERCIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1260 mA |
67108864 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
70 Cel |
3-STATE |
64MX72 |
64M |
0 Cel |
DUAL |
R-PDMA-N240 |
333 MHz |
Not Qualified |
4831838208 bit |
.063 Amp |
.45 ns |
|||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
COMMERCIAL |
244 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
3177 mA |
536870912 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM244,24 |
Other Memory ICs |
.6 mm |
70 Cel |
3-STATE |
512MX72 |
512M |
0 Cel |
DUAL |
R-PDMA-N244 |
333 MHz |
Not Qualified |
38654705664 bit |
.144 Amp |
.45 ns |
|||||||||||||||||||||||||||||||||||||||||
Micron Technology |
MEMORY CIRCUIT |
COMMERCIAL |
144 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
67108864 words |
3.3 |
16 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
64MX16 |
64M |
0 Cel |
DUAL |
R-XDMA-N144 |
3.6 V |
Not Qualified |
1073741824 bit |
3 V |
FLASH MEMORY IS ORGANISED AS 4M X 64 |
|||||||||||||||||||||||||||||||||||||||||||||||
Micron Technology |
MEMORY CIRCUIT |
COMMERCIAL |
144 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
33554432 words |
3.3 |
16 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
32MX16 |
32M |
0 Cel |
DUAL |
R-XDMA-N144 |
3.6 V |
Not Qualified |
536870912 bit |
3 V |
FLASH MEMORY IS ORGANISED AS 4M X 64 |
|||||||||||||||||||||||||||||||||||||||||||||||
Micron Technology |
VIDEO DRAM |
COMMERCIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
160 mA |
131072 words |
5 |
5 |
8 |
CHIP CARRIER |
LDCC52,.8SQ |
Other Memory ICs |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
S-PQCC-J52 |
Not Qualified |
1048576 bit |
e0 |
.001 Amp |
120 ns |
|||||||||||||||||||||||||||||||||||||||||||
Micron Technology |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
5040 mA |
134217728 words |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
128MX72 |
128M |
0 Cel |
DUAL |
R-PDMA-N184 |
133 MHz |
Not Qualified |
9663676416 bit |
.09 Amp |
.75 ns |
||||||||||||||||||||||||||||||||||||||||||
Micron Technology |
COMMERCIAL |
200 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
3690 mA |
67108864 words |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM200,24 |
Other Memory ICs |
.6 mm |
70 Cel |
3-STATE |
64MX72 |
64M |
0 Cel |
DUAL |
R-PDMA-N200 |
133 MHz |
Not Qualified |
4831838208 bit |
.072 Amp |
.75 ns |
||||||||||||||||||||||||||||||||||||||||||
Micron Technology |
MEMORY CIRCUIT |
COMMERCIAL |
144 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
33554432 words |
3.3 |
16 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
32MX16 |
32M |
0 Cel |
DUAL |
R-XDMA-N144 |
3.6 V |
Not Qualified |
536870912 bit |
3 V |
FLASH MEMORY IS ORGANISED AS 4M X 64 |
|||||||||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
COMMERCIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
33554432 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
55 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N240 |
267 MHz |
Not Qualified |
2415919104 bit |
.045 Amp |
.5 ns |
||||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
3150 mA |
67108864 words |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
64MX72 |
64M |
0 Cel |
DUAL |
R-PDMA-N184 |
133 MHz |
Not Qualified |
4831838208 bit |
.045 Amp |
.75 ns |
|||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
COMMERCIAL |
244 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2520 mA |
134217728 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM244,24 |
Other Memory ICs |
.6 mm |
70 Cel |
3-STATE |
128MX72 |
128M |
0 Cel |
DUAL |
R-PDMA-N244 |
333 MHz |
Not Qualified |
9663676416 bit |
.063 Amp |
||||||||||||||||||||||||||||||||||||||||||
Micron Technology |
MEMORY CIRCUIT |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
131072 words |
5 |
5 |
8 |
IN-LINE |
DIP40,.6 |
Other Memory ICs |
2.54 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T40 |
Not Qualified |
1048576 bit |
e0 |
.001 Amp |
100 ns |
||||||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
COMMERCIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
6840 mA |
268435456 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
55 Cel |
3-STATE |
256MX72 |
256M |
0 Cel |
DUAL |
R-PDMA-N240 |
200 MHz |
Not Qualified |
19327352832 bit |
.6 ns |
||||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
COMMERCIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
3960 mA |
134217728 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
70 Cel |
3-STATE |
128MX72 |
128M |
0 Cel |
DUAL |
R-PDMA-N240 |
200 MHz |
Not Qualified |
9663676416 bit |
.126 Amp |
.6 ns |
|||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
COMMERCIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2493 mA |
268435456 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
70 Cel |
3-STATE |
256MX72 |
256M |
0 Cel |
DUAL |
R-PDMA-N240 |
266 MHz |
Not Qualified |
19327352832 bit |
.5 ns |
||||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
COMMERCIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2520 mA |
67108864 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
55 Cel |
3-STATE |
64MX72 |
64M |
0 Cel |
DUAL |
R-PDMA-N240 |
333 MHz |
Not Qualified |
4831838208 bit |
260 |
.045 Amp |
.45 ns |
||||||||||||||||||||||||||||||||||||||||
Micron Technology |
MEMORY CIRCUIT |
COMMERCIAL |
24 |
ZIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
60 mA |
65536 words |
5 |
5 |
4 |
IN-LINE |
ZIP24,.1 |
Other Memory ICs |
1.27 mm |
70 Cel |
64KX4 |
64K |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-XZIP-T24 |
Not Qualified |
262144 bit |
e0 |
.004 Amp |
100 ns |
|||||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
4140 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
143 MHz |
Not Qualified |
1207959552 bit |
.036 Amp |
5.4 ns |
|||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
33554432 words |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N184 |
133 MHz |
Not Qualified |
2415919104 bit |
.036 Amp |
.75 ns |
||||||||||||||||||||||||||||||||||||||||||
Micron Technology |
MEMORY CIRCUIT |
COMMERCIAL |
40 |
TSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
220 mA |
262144 words |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP40/44,.46,32 |
Other Memory ICs |
.8 mm |
70 Cel |
256KX8 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G40 |
Not Qualified |
2097152 bit |
e0 |
.01 Amp |
60 ns |
|||||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
COMMERCIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
5400 mA |
134217728 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
70 Cel |
3-STATE |
128MX72 |
128M |
0 Cel |
DUAL |
R-PDMA-N240 |
400 MHz |
Not Qualified |
9663676416 bit |
.126 Amp |
.4 ns |
|||||||||||||||||||||||||||||||||||||||||
Micron Technology |
VIDEO DRAM |
COMMERCIAL |
40 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
160 mA |
262144 words |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ40,.44 |
Other Memory ICs |
1.27 mm |
70 Cel |
256KX4 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J40 |
Not Qualified |
1048576 bit |
e0 |
.001 Amp |
120 ns |
|||||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
COMMERCIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
4230 mA |
134217728 words |
COMMON |
1.5 |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
70 Cel |
3-STATE |
128MX72 |
128M |
0 Cel |
DUAL |
R-PDMA-N240 |
533 MHz |
Not Qualified |
9663676416 bit |
.09 Amp |
Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.
One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.
Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.
Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.