COMMERCIAL Other Function Memory ICs 1,473

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
M372F0404BF0-C600	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		600 mA	4194304 words	NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M		DUAL	R-PDMA-N168					Not Qualified	301989888 bit				.03 Amp		60 ns
M372F0400CZ0-50	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1620 mA	4194304 words	NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M		DUAL	R-PDMA-N168					Not Qualified	301989888 bit				.03 Amp		50 ns
KM4232W259Q-80	Samsung	VIDEO DRAM	COMMERCIAL	120	QFP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		170 mA	262144 words			5	5	32	FLATPACK	QFP120,.63X.87,20	Other Memory ICs	.5 mm	70 Cel		256KX32	256K	Tin/Lead (Sn/Pb)	QUAD	R-PQFP-G120					Not Qualified	8388608 bit			e0	.01 Amp		80 ns
KMM372F3280AS3-7	Samsung		COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2440 mA	33554432 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	R-PDMA-N168		41.91 mm			Not Qualified	2415919104 bit				.03 Amp		70 ns
KMM374S823AT-G8	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1530 mA	8388608 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M		DUAL	R-PDMA-N168			125 MHz		Not Qualified	603979776 bit				.018 Amp		6 ns
M372E0803BT0-C5	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1080 mA	8388608 words		COMMON	5	5	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M		DUAL	R-PDMA-N168					Not Qualified	603979776 bit				.03 Amp		50 ns
KMM372F3200AK2-7	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2440 mA	33554432 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	R-PDMA-N168		50.8 mm			Not Qualified	2415919104 bit				.03 Amp		70 ns
KMM374S1620AT-G0	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2250 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M		DUAL	R-PDMA-N168			100 MHz		Not Qualified	1207959552 bit				.036 Amp		7 ns
M372V3200BB4-C500	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2260 mA	33554432 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	R-PDMA-N168		50.8 mm			Not Qualified	2415919104 bit				.03 Amp		50 ns
KMM372F3280AS2-5	Samsung		COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2800 mA	33554432 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	R-PDMA-N168		50.8 mm			Not Qualified	2415919104 bit				.03 Amp		50 ns
KMM374S1623AT-G0	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1485 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M		DUAL	R-PDMA-N168			100 MHz		Not Qualified	1207959552 bit				.036 Amp		7 ns
M372F0400CZ0-60	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1440 mA	4194304 words	NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M		DUAL	R-PDMA-N168					Not Qualified	301989888 bit				.03 Amp		60 ns
KS7308	Samsung	MEMORY CIRCUIT	COMMERCIAL	48	LFQFP		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		2048 words			5		10	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		2KX10	2K		QUAD	S-PQFP-G48	5.25 V	1.6 mm		7 mm	Not Qualified	20480 bit	4.75 V				7 mm
KMM372V213AK-6	Samsung		COMMERCIAL	168	DIMM	2048	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		900 mA	2097152 words	NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	2MX72	2M		DUAL	R-PDMA-N168		25.4 mm			Not Qualified	150994944 bit				.05 Amp		60 ns
M372E0803BJ0-C5	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1080 mA	8388608 words		COMMON	5	5	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M		DUAL	R-PDMA-N168					Not Qualified	603979776 bit				.03 Amp		50 ns
KMM372F3200AS3-6	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2620 mA	33554432 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	R-PDMA-N168		41.91 mm			Not Qualified	2415919104 bit				.03 Amp		60 ns
KMM372V3200AS3-5	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2800 mA	33554432 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	R-PDMA-N168		41.91 mm			Not Qualified	2415919104 bit				.03 Amp		50 ns
M372E0883BT0-C5	Samsung		COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		900 mA	8388608 words		COMMON	5	5	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M		DUAL	R-PDMA-N168					Not Qualified	603979776 bit				.03 Amp		50 ns
KM424C256P-8	Samsung	VIDEO DRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			262144 words			5	5	4	IN-LINE	DIP28,.4	Other Memory ICs	2.54 mm	70 Cel		256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28					Not Qualified	1048576 bit			e0			80 ns
KMM372V3200AK2-6	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2620 mA	33554432 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	R-PDMA-N168		50.8 mm			Not Qualified	2415919104 bit				.03 Amp		60 ns
KMM372F3280AK2-6	Samsung		COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2620 mA	33554432 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	R-PDMA-N168		50.8 mm			Not Qualified	2415919104 bit				.03 Amp		60 ns
MT9HVF12872PKY-80EE1	Micron Technology		COMMERCIAL	244	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3015 mA	134217728 words		COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM244,24	Other Memory ICs	.6 mm	70 Cel	3-STATE	128MX72	128M		DUAL	R-PDMA-N244			400 MHz		Not Qualified	9663676416 bit				.063 Amp
MT9VDVF3272G-262	Micron Technology		COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			33554432 words		COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	R-PDMA-N184			133 MHz		Not Qualified	2415919104 bit				.036 Amp		.75 ns
MT42C8128Z-12	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	40	ZIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE		110 mA	131072 words			5	5	8	IN-LINE	ZIP40,.1	Other Memory ICs	1.27 mm	70 Cel		128KX8	128K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T40					Not Qualified	1048576 bit			e0	.01 Amp		120 ns
MT42C256K16A1TG-6	Micron Technology	VIDEO DRAM	COMMERCIAL	70	TSSOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		220 mA	262144 words			5	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP70,.46	Other Memory ICs	.635 mm	70 Cel		256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G70					Not Qualified	4194304 bit			e0	.01 Amp		60 ns
MT42C8128DJ-15	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	40	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND			131072 words			5	5	8	SMALL OUTLINE	SOJ40,.44	Other Memory ICs	1.27 mm	70 Cel		128KX8	128K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J40					Not Qualified	1048576 bit			e0	.001 Amp		150 ns
MT42C8256DJ-10	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	40	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND		130 mA	262144 words			5	5	8	SMALL OUTLINE	SOJ40,.44	Other Memory ICs	1.27 mm	70 Cel		256KX8	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J40					Not Qualified	2097152 bit			e0	.01 Amp		100 ns
MT42C8257TG-8	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	40	TSOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		195 mA	262144 words			5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Other Memory ICs	.8 mm	70 Cel		256KX8	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40					Not Qualified	2097152 bit			e0	.01 Amp		80 ns
MT18HVF12872DY-80E	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2763 mA	134217728 words		COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	128MX72	128M		DUAL	R-PDMA-N240			400 MHz		Not Qualified	9663676416 bit				.126 Amp		.4 ns
MT18VDVF6472DG-335	Micron Technology		COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			67108864 words		COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	64MX72	64M		DUAL	R-PDMA-N184			167 MHz		Not Qualified	4831838208 bit				.072 Amp		.7 ns
MT18HTS25672PKY-667G1	Micron Technology		COMMERCIAL	244	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2808 mA	268435456 words		COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM244,24	Other Memory ICs	.6 mm	70 Cel	3-STATE	256MX72	256M		DUAL	R-PDMA-N244			333 MHz		Not Qualified	19327352832 bit						.45 ns
MT18HVF12872DY-53E	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2088 mA	134217728 words		COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	128MX72	128M		DUAL	R-PDMA-N240			266 MHz		Not Qualified	9663676416 bit				.126 Amp		.5 ns
MT9VDDT3272HG-40B	Micron Technology		COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			33554432 words		COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	70 Cel	3-STATE	32MX72	32M		DUAL	R-PDMA-N200			200 MHz		Not Qualified	2415919104 bit				.036 Amp		.7 ns
MT72HTS2G72PY-40EA1	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		5832 mA	2147483648 words		COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	2GX72	2G		DUAL	R-PDMA-N240			200 MHz		Not Qualified	154618822656 bit				.576 Amp		.6 ns
MT42C4065C-10	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	24	DIP		RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE		60 mA	65536 words			5	5	4	IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	70 Cel		64KX4	64K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24					Not Qualified	262144 bit			e0	.002 Amp		100 ns
MT36KSZF1G72LZ-1G4M1B2	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			1073741824 words		COMMON	1.35	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	1GX72	1G		DUAL	R-PDMA-N240			667 MHz		Not Qualified	77309411328 bit
MT18VDDF6472DY-262	Micron Technology		COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			67108864 words		COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	64MX72	64M		DUAL	R-PDMA-N184			133 MHz		Not Qualified	4831838208 bit				.072 Amp		.75 ns
MT36HTF25672Y-53E	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		7200 mA	268435456 words		COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	55 Cel	3-STATE	256MX72	256M		DUAL	R-PDMA-N240			267 MHz		Not Qualified	19327352832 bit						.5 ns
NP8P128A13TSM60E	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	56	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words			3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel		16MX8	16M		DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm		134217728 bit	2.7 V				18.4 mm
MT9VDDT3272AG-40BG4	Micron Technology		COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		4230 mA	33554432 words		COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	R-PDMA-N184			200 MHz		Not Qualified	2415919104 bit				.036 Amp		.7 ns
MT18LSDT1672AG-10A	Micron Technology		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2160 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M		DUAL	R-PDMA-N168			125 MHz		Not Qualified	1207959552 bit				.036 Amp		6 ns
MT8LSFT32128H-13EA1	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words			3.3		16	MICROELECTRONIC ASSEMBLY				70 Cel		64MX16	64M		DUAL	R-XDMA-N144	3.6 V				Not Qualified	1073741824 bit	3 V	FLASH MEMORY IS ORGANISED AS 4M X 64
MT43C4258DJ-12	Micron Technology	VIDEO DRAM	COMMERCIAL	40	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND		160 mA	262144 words			5	5	4	SMALL OUTLINE	SOJ40,.44	Other Memory ICs	1.27 mm	70 Cel		256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J40					Not Qualified	1048576 bit			e0	.001 Amp		120 ns
MT9LSDT872AG-10C	Micron Technology		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1890 mA	8388608 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M		DUAL	R-PDMA-N168			125 MHz		Not Qualified	603979776 bit				.018 Amp		6 ns
MT9VDVF3272Y-202	Micron Technology		COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			33554432 words		COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	R-PDMA-N184			125 MHz		Not Qualified	2415919104 bit				.036 Amp		.8 ns
MT144KSZQ8G72LZ-1G4E1A7	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		5976 mA			COMMON	1.35	1.35		MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE				DUAL	R-PDMA-N240			667 MHz		Not Qualified	618475290624 bit				2.592 Amp		.255 ns
MT18VDDF6472DY-40B	Micron Technology		COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			67108864 words		COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	64MX72	64M		DUAL	R-PDMA-N184			200 MHz		Not Qualified	4831838208 bit				.072 Amp		.7 ns
MT18VDDF12872DY-335J1	Micron Technology		COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		5220 mA	134217728 words		COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128MX72	128M		DUAL	R-PDMA-N184			166 MHz		Not Qualified	9663676416 bit				.09 Amp		.7 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.