Infineon Technologies Other Function Memory ICs 1,024

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
CY15B102Q-SXET	Infineon Technologies	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SYNCHRONOUS	5 mA	262144 words		3.3		2.5/3.3	8	SMALL OUTLINE	SOP8,.3	SRAMs	1.27 mm	125 Cel		256KX8	256K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.6 V	2.03 mm	5.23 mm	Not Qualified	2097152 bit	2 V				260	.00075 Amp	5.28 mm
CY15B102Q-SXE	Infineon Technologies	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SYNCHRONOUS	5 mA	262144 words		3.3		2.5/3.3	8	SMALL OUTLINE	SOP8,.3	SRAMs	1.27 mm	125 Cel		256KX8	256K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.6 V	2.03 mm	5.23 mm	Not Qualified	2097152 bit	2 V			30	260	.00075 Amp	5.28 mm
FM33256B-G	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	14	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		32768 words			EEPROM+FLASH		8	SMALL OUTLINE	SOP14,.23		1.27 mm	85 Cel		32KX8	32K	-40 Cel	PURE TIN	DUAL	R-PDSO-G14	3	3.6 V	1.727 mm	3.8985 mm		262144 bit	2.7 V			30	260		8.6483 mm
FM33256B-GTR	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	14	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		32768 words			EEPROM+FLASH		8	SMALL OUTLINE	SOP14,.23		1.27 mm	85 Cel		32KX8	32K	-40 Cel	PURE TIN	DUAL	R-PDSO-G14	3	3.6 V	1.727 mm	3.8985 mm		262144 bit	2.7 V			30	260		8.6483 mm
CY8C20110-LDX2I	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	16	VQCCN		SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SYNCHRONOUS		2048 words		3			1	CHIP CARRIER, VERY THIN PROFILE			.5 mm	85 Cel		2KX1	2K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	QUAD	S-XQCC-N16	3	5.25 V	.6 mm	3 mm	Not Qualified	2048 bit	2.4 V	SRAM IS ORGANISED AS 512MB	e4	20	260		3 mm
FM31256-GTR	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	14	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		32768 words		3			8	SMALL OUTLINE	SOP14,.25		1.27 mm	85 Cel		32KX8	32K	-40 Cel	TIN	DUAL	R-PDSO-G14	3	5.5 V	1.727 mm	3.8985 mm		262144 bit	2.7 V	0.9ms TAA available @400khz and 3ms TAA available @ 100 khz	e3				8.6483 mm	550 ns
CY8C20110-SX2I	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	16	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		2048 words		3			1	SMALL OUTLINE			1.27 mm	85 Cel		2KX1	2K	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G16	3	5.25 V	1.727 mm	3.9 mm	Not Qualified	2048 bit	2.4 V	SRAM IS ORGANISED AS 512MB	e4	40	260		9.893 mm
S70KL1281DABHI020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm		134217728 bit	2.7 V						8 mm
S70KL1281DABHI023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm		134217728 bit	2.7 V						8 mm
S27KL0641DABHI020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words		3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		8MX8	8M	-40 Cel		BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm		67108864 bit	2.7 V						8 mm
S27KL0641DABHB020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		8388608 words		3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		8MX8	8M	-40 Cel		BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm		67108864 bit	2.7 V						8 mm
CY15B104QSN-108SXIES	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		524288 words		3			8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K	-40 Cel		DUAL	R-PDSO-G8		3.6 V	2.03 mm	5.23 mm		4194304 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		5.23 mm
CY8C20110-SX2IT	Infineon Technologies	MEMORY CIRCUIT																																3
S27KL0641DABHV023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words		3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		8MX8	8M	-40 Cel		BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm		67108864 bit	2.7 V						8 mm
CY15B256Q-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		32768 words		3.3			8	SMALL OUTLINE			1.27 mm	85 Cel		32KX8	32K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.6 V	1.727 mm	3.898 mm		262144 bit	2 V				260		4.889 mm
S27KS0641DPBHI023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words		1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		8MX8	8M	-40 Cel		BOTTOM	R-PBGA-B24	3	1.95 V	1 mm	6 mm		67108864 bit	1.7 V						8 mm
S70KS1281DPBHI020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24	3	1.95 V	1 mm	6 mm		134217728 bit	1.7 V						8 mm
IRMCF171TR	Infineon Technologies	MEMORY CIRCUIT																																3
S27KS0641DPBHV023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words		1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		8MX8	8M	-40 Cel		BOTTOM	R-PBGA-B24	3	1.95 V	1 mm	6 mm		67108864 bit	1.7 V						8 mm
CY15B108QN-20LPXCES	Infineon Technologies	MEMORY CIRCUIT	COMMERCIAL	8	VSON		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SYNCHRONOUS		1048576 words		3.3			8	SMALL OUTLINE, VERY THIN PROFILE			.65 mm	70 Cel		1MX8	1M	0 Cel		DUAL	R-PDSO-N8		3.6 V	.55 mm	3.23 mm		8388608 bit	1.8 V						3.28 mm
FM25L256-GC	Infineon Technologies
S27KS0641DPBHI020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words		1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		8MX8	8M	-40 Cel		BOTTOM	R-PBGA-B24	3	1.95 V	1 mm	6 mm		67108864 bit	1.7 V						8 mm
S27KL0641DABHB023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		8388608 words		3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		8MX8	8M	-40 Cel		BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm		67108864 bit	2.7 V						8 mm
S71KL512SC0BHV003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24	3		1 mm	6 mm		536870912 bit		HYPER RAM IS ORGANISED AS 8MX8					8 mm
CY15B004J-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		512 words		3.3			8	SMALL OUTLINE			1.27 mm	85 Cel		512X8	512	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.65 V	1.727 mm	3.8985 mm		4096 bit	2.7 V				260		4.889 mm
SLE66R32SMCC8	Infineon Technologies	MEMORY CIRCUIT					RECTANGULAR	UNSPECIFIED	NO				UNSPECIFIED									MICROELECTRONIC ASSEMBLY										UNSPECIFIED	R-XXMA-X					Not Qualified
HYM72V1635GS-50	Infineon Technologies		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		NO LEAD		2520 mA	16777216 words	COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M	0 Cel		DUAL	R-PDMA-N168			38.1 mm		Not Qualified	1207959552 bit						.03 Amp		50 ns
SLE5536S-BDM3	Infineon Technologies
SLE66C160S	Infineon Technologies
SLE66R16SNB	Infineon Technologies	MEMORY CIRCUIT					UNSPECIFIED	UNSPECIFIED	YES				NO LEAD									UNCASED CHIP										UPPER	X-XUUC-N					Not Qualified
SLE55R08LM	Infineon Technologies
SLE88CX642S	Infineon Technologies
SP000953288	Infineon Technologies	MEMORY CIRCUIT
SLE66C162P-T85M5	Infineon Technologies
SLE66CX640P-T85M5	Infineon Technologies
SLE5536SE-BDM3	Infineon Technologies
SLE66R32PC	Infineon Technologies	MEMORY CIRCUIT	OTHER	2	DIE		UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SYNCHRONOUS		4096 words					8	UNCASED CHIP				70 Cel		4KX8	4K	-25 Cel		UPPER	X-XUUC-N2					Not Qualified	32768 bit
SLE66C164PM5	Infineon Technologies
SLE5536SE-BD-V3M3	Infineon Technologies
SLE66R32PMCC8IXHSA2	Infineon Technologies	MEMORY CIRCUIT
SLE55R01LM	Infineon Technologies
SLE66R01PNBX1SA1	Infineon Technologies	MEMORY CIRCUIT	OTHER	2	DIE		UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SYNCHRONOUS		38 words					32	UNCASED CHIP				70 Cel		38X32	38	-25 Cel		UPPER	X-XUUC-N2						1216 bit
SLE5536EM3	Infineon Technologies
SLE66C320S-M6	Infineon Technologies
SAB-R3020-25-N	Infineon Technologies		COMMERCIAL	68	QCCJ		SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND		70 mA			5		5		CHIP CARRIER	LDCC68,1.0SQ	Other Memory ICs	1.27 mm	70 Cel				0 Cel	Tin/Lead (Sn/Pb)	QUAD	S-PQCC-J68					Not Qualified				e0
SLE66R16SMCC2	Infineon Technologies	MEMORY CIRCUIT					RECTANGULAR	UNSPECIFIED	NO				UNSPECIFIED									MICROELECTRONIC ASSEMBLY										UNSPECIFIED	R-XXMA-X					Not Qualified
SLE66C160S-M4	Infineon Technologies
SLE66C162PM5	Infineon Technologies

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.