Infineon Technologies Other Function Memory ICs 1,024

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish I2C Control Byte Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Interleaved Burst Length Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

CY15E004Q-SXA

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SYNCHRONOUS

512 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

512X8

512

-40 Cel

PURE TIN

DUAL

R-PDSO-G8

3

5.5 V

1.727 mm

3.8985 mm

4096 bit

4.5 V

260

4.889 mm

CY15E064Q-SXA

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SYNCHRONOUS

8192 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

8KX8

8K

-40 Cel

PURE TIN

DUAL

R-PDSO-G8

3

5.5 V

1.727 mm

3.8985 mm

65536 bit

4.5 V

260

4.889 mm

CY15E016J-SXA

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SYNCHRONOUS

2048 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

2KX8

2K

-40 Cel

PURE TIN

DUAL

R-PDSO-G8

3

5.5 V

1.727 mm

3.8985 mm

16384 bit

4.5 V

260

4.889 mm

CY15B256Q-SXAT

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SYNCHRONOUS

32768 words

3.3

8

SMALL OUTLINE

1.27 mm

85 Cel

32KX8

32K

-40 Cel

PURE TIN

DUAL

R-PDSO-G8

3

3.6 V

1.727 mm

3.898 mm

262144 bit

2 V

260

4.889 mm

CY15E016Q-SXA

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SYNCHRONOUS

2048 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

2KX8

2K

-40 Cel

PURE TIN

DUAL

R-PDSO-G8

3

5.5 V

1.727 mm

3.8985 mm

16384 bit

4.5 V

260

4.889 mm

CY15V102QN-50SXEES

Infineon Technologies

MEMORY CIRCUIT

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SYNCHRONOUS

262144 words

1.8

8

SMALL OUTLINE

1.27 mm

125 Cel

256KX8

256K

-40 Cel

DUAL

R-PDSO-G8

1.89 V

2.03 mm

5.23 mm

2097152 bit

1.71 V

NOT SPECIFIED

NOT SPECIFIED

5.23 mm

CY15B064J-SXAT

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SYNCHRONOUS

8192 words

3.3

8

SMALL OUTLINE

1.27 mm

85 Cel

8KX8

8K

-40 Cel

PURE TIN

DUAL

R-PDSO-G8

3

3.65 V

1.727 mm

3.8985 mm

65536 bit

2.7 V

260

4.889 mm

CY15E004J-SXAT

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SYNCHRONOUS

512 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

512X8

512

-40 Cel

PURE TIN

DUAL

R-PDSO-G8

3

5.5 V

1.727 mm

3.8985 mm

4096 bit

4.5 V

260

4.889 mm

CY15B128Q-SXAT

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SYNCHRONOUS

16384 words

3.3

8

SMALL OUTLINE

1.27 mm

85 Cel

16KX8

16K

-40 Cel

PURE TIN

DUAL

R-PDSO-G8

3

3.6 V

1.727 mm

3.898 mm

131072 bit

2 V

260

4.889 mm

CY15E064J-SXA

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SYNCHRONOUS

8192 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

8KX8

8K

-40 Cel

PURE TIN

DUAL

R-PDSO-G8

3

5.5 V

1.727 mm

3.8985 mm

65536 bit

4.5 V

260

4.889 mm

CY15E064Q-SXAT

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SYNCHRONOUS

8192 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

8KX8

8K

-40 Cel

PURE TIN

DUAL

R-PDSO-G8

3

5.5 V

1.727 mm

3.8985 mm

65536 bit

4.5 V

260

4.889 mm

CY15E016J-SXAT

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SYNCHRONOUS

2048 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

2KX8

2K

-40 Cel

PURE TIN

DUAL

R-PDSO-G8

3

5.5 V

1.727 mm

3.8985 mm

16384 bit

4.5 V

260

4.889 mm

CY15B004J-SXAT

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SYNCHRONOUS

512 words

3.3

8

SMALL OUTLINE

1.27 mm

85 Cel

512X8

512

-40 Cel

PURE TIN

DUAL

R-PDSO-G8

3

3.65 V

1.727 mm

3.8985 mm

4096 bit

2.7 V

260

4.889 mm

CY15E004Q-SXAT

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SYNCHRONOUS

512 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

512X8

512

-40 Cel

PURE TIN

DUAL

R-PDSO-G8

3

5.5 V

1.727 mm

3.8985 mm

4096 bit

4.5 V

260

4.889 mm

CY15B064Q-SXAT

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SYNCHRONOUS

8192 words

3.3

8

SMALL OUTLINE

1.27 mm

85 Cel

8KX8

8K

-40 Cel

PURE TIN

DUAL

R-PDSO-G8

3

3.65 V

1.727 mm

3.8985 mm

65536 bit

2.7 V

260

4.889 mm

CY15B016Q-SXA

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SYNCHRONOUS

2048 words

3.3

8

SMALL OUTLINE

1.27 mm

85 Cel

2KX8

2K

-40 Cel

PURE TIN

DUAL

R-PDSO-G8

3

3.6 V

1.727 mm

3.8985 mm

16384 bit

2.7 V

260

4.889 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.