Infineon Technologies Other Function Memory ICs 1,024

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length	Maximum Access Time
S72NS256ND0AFW722	Infineon Technologies
S71NS256PC0ZJEJR2	Infineon Technologies
S72NS128ND0AJW120	Infineon Technologies
S72XS128RD0AHBJ20	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-40 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm		134217728 bit	1.7 V					8 mm
S75WS256PEFJF5VS0	Infineon Technologies	MEMORY CIRCUIT	OTHER	115	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B115	3	1.95 V	1.4 mm	9 mm	Not Qualified	268435456 bit	1.7 V		e1	40	260	12 mm
S71NS256PC0ZJETW0	Infineon Technologies
S71NS256NB0BJWVN1	Infineon Technologies	MEMORY CIRCUIT	OTHER	60	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-25 Cel	Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)	BOTTOM	R-PBGA-B60	3	1.95 V	1.2 mm	10 mm	Not Qualified	268435456 bit	1.7 V		e2	40	260	11 mm
S71NS256PC0ZHETW0	Infineon Technologies
S71KL256SC0BHA003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	33554432 words	3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	32MX8	32M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm	6 mm		268435456 bit		HYPER RAM IS ORGANISED AS 8MX8				8 mm
S71KS512SC0BHV003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	67108864 words	1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm	6 mm		536870912 bit		HYPER RAM IS ORGANISED AS 8MX8				8 mm
S71NS128NA0BJWMD0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1			7.7 mm
S71NS256PC0ZHETW2	Infineon Technologies
S72NS128RD0AHBL40	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm	Not Qualified	134217728 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16				8 mm
S72NS128RD0AJBGG0	Infineon Technologies
S72NS256ND0AFW7J0	Infineon Technologies
STK14CC8-RF25I	Infineon Technologies
S71KS512SC0BHI003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	67108864 words	1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm	6 mm		536870912 bit		HYPER RAM IS ORGANISED AS 8MX8				8 mm
S72NS256RD0AHBM00	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16				8 mm
S72VS256RE0AHBHH0	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-40 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm		268435456 bit	1.7 V					8 mm
S72XS128RD0AHBJH0	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-40 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm		134217728 bit	1.7 V					8 mm
S72NS128RD0AHBM43	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm	Not Qualified	134217728 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16				8 mm
S72WS01GSF0YHM153	Infineon Technologies	MEMORY CIRCUIT	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	33554432 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA186,13X17,25	Other Memory ICs	.65 mm	85 Cel	32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B186		1.95 V	1.2 mm	11 mm	Not Qualified	536870912 bit	1.7 V	512 MBIT SDRAM				13 mm	100 ns
S72NS128RD0AJBLG0	Infineon Technologies
S71GL032N40BHW0P0	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B56		3.1 V	1.2 mm	7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 256K X 16				9 mm
S70KS1281DPBHA023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	16777216 words	1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	8 mm
S72WS01GSF0YHMJ30	Infineon Technologies	MEMORY CIRCUIT	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	33554432 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA186,13X17,25	Other Memory ICs	.65 mm	85 Cel	32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B186		1.95 V	1.2 mm	11 mm	Not Qualified	536870912 bit	1.7 V	512 MBIT SDRAM				13 mm	100 ns
S71GL064NA0BHW0Z3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	4194304 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	67108864 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260	9 mm	90 ns
S70KL1281DABHV033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		3.6 V	1 mm	6 mm		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	8 mm
S71GL064NA0BHWOF3	Infineon Technologies
S71KL512SC0BHA003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	67108864 words	3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm	6 mm		536870912 bit		HYPER RAM IS ORGANISED AS 8MX8				8 mm
S71NS128NA0BJWSF0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1			9.2 mm
S71NS128NA0BJWMD2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1			7.7 mm
S72NS256ND0AFW732	Infineon Technologies
S71NS256PC0ZJETS0	Infineon Technologies
S72XS256RE0AHBHD0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm		268435456 bit	1.7 V					8 mm
S71NS256PB0ZHETV3	Infineon Technologies
S71GL064NB0BFW0P3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	S-PBGA-B56					Not Qualified								90 ns
S98WS064RBOHW0013	Infineon Technologies	MEMORY CIRCUIT	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B88		1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V					10 mm
S70KS1281DPBHV023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24	3	1.95 V	1 mm	6 mm		134217728 bit	1.7 V					8 mm
S72NS128RD0AHBLC3	Infineon Technologies
S71GL064NA0BHWOF2	Infineon Technologies
S70KS1281DPBHA020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	16777216 words	1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	8 mm
S72WS01GSF0YHMJ52	Infineon Technologies	MEMORY CIRCUIT	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	33554432 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA186,13X17,25	Other Memory ICs	.65 mm	85 Cel	32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B186		1.95 V	1.2 mm	11 mm	Not Qualified	536870912 bit	1.7 V	512 MBIT SDRAM				13 mm	100 ns
S71NS256PB0ZHEJR3	Infineon Technologies
S72XS01GSF0YHMG53	Infineon Technologies	MEMORY CIRCUIT	OTHER	186			PLASTIC/EPOXY	YES		CMOS					1.8	FLASH+SDRAM	1.8			BGA186,13X17,25	Other Memory ICs		85 Cel			-25 Cel								Not Qualified
S71NS128NA0BJWMZ2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1			7.7 mm
S71KS512SC0BHA000	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	67108864 words	1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm	6 mm		536870912 bit		HYPER RAM IS ORGANISED AS 8MX8				8 mm
S70KL1281DABHI033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		3.6 V	1 mm	6 mm		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	8 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.