Infineon Technologies Other Function Memory ICs 1,024

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	No. of Words	Sequential Burst Length	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Interleaved Burst Length	Length	Maximum Access Time
S71NS128PB0ZHEJR3	Infineon Technologies
S71NS256PC0ZHETS2	Infineon Technologies
S72NS128ND0AJW1K2	Infineon Technologies
S71NS128NA0BJWMF0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1				7.7 mm
S71KS512SC0BHI000	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	67108864 words			1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm		6 mm		536870912 bit		HYPER RAM IS ORGANISED AS 8MX8					8 mm
S71GL032NA0BFW0U2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	2097152 words			3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm		7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260		9 mm	90 ns
S70KL1281DABHA033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	16777216 words			3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		3.6 V	1 mm		6 mm		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S72NS256RD0KHFL43	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.65 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B128		1.95 V	1.05 mm		12 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16					12 mm
S72XS128RD0AHBGE0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm		8 mm	Not Qualified	134217728 bit	1.7 V						8 mm
S71NS128PC0ZHETS2	Infineon Technologies
S72NS512RE0AHGLC3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	FBGA		SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL		33554432 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel		32MX16	32M	-25 Cel		BOTTOM	S-PBGA-B133						Not Qualified	536870912 bit
S71NS256PB0ZHETW3	Infineon Technologies
S72NS512RE0AHGGC0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	FBGA		SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL		33554432 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel		32MX16	32M	-25 Cel		BOTTOM	S-PBGA-B133						Not Qualified	536870912 bit
S70KS1281DGBHA030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	16777216 words			1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm		6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S72NS128RD0AHBM40	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm		8 mm	Not Qualified	134217728 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16					8 mm
S71NS256PC0ZHETW3	Infineon Technologies
SM2603T-7.5	Infineon Technologies		COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING		8388608 words	1,2,4,8,FP	COMMON			2.5/3.3,3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	8MX8	8M	0 Cel		DUAL	R-PDSO-G54				133 MHz		Not Qualified	67108864 bit						1,2,4,8		4.5 ns
S72NS256RD0AHBLC0	Infineon Technologies
S72NS256RD0AJBGG0	Infineon Technologies
S72NS128RD0AJBMG3	Infineon Technologies
S71NS128NA0BJWSP2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1				9.2 mm
S71NS128NA0BJWMZ3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1				7.7 mm
S71NS128PB0ZHETV2	Infineon Technologies
S71NS128NA0BJWSZ0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1				9.2 mm
S71NS256PB0ZHETS3	Infineon Technologies
S72NS256RD0AHBGC3	Infineon Technologies
S71KS512SC0BHV000	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	67108864 words			1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24	3		1 mm		6 mm		536870912 bit		HYPER RAM IS ORGANISED AS 8MX8					8 mm
S71NS128NC0BJWRN1	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)	BOTTOM	R-PBGA-B56	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V		e2	40	260		9.2 mm
S70KL1281DABHB020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	16777216 words			3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		3.6 V	1 mm		6 mm		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S72NS128RD0AHBMC3	Infineon Technologies
S72WS01GSF0YHMJ32	Infineon Technologies	MEMORY CIRCUIT	OTHER	186	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	33554432 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA186,13X17,25	Other Memory ICs	.65 mm	85 Cel		32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B186		1.95 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.7 V	512 MBIT SDRAM					13 mm	100 ns
S70KS1281DGBHA033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	16777216 words			1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm		6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S71XS256RD0ZHEC40	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		16X16	16	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm		8 mm	Not Qualified	256 bit	1.7 V	PSRAM IS ORGANIZED AS 8M X 16					9.2 mm
S71GL128PC0HH31Y2	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B84		3.1 V	1.2 mm		8 mm	Not Qualified	134217728 bit	2.7 V						11.6 mm
S71NS256PB0ZJETW0	Infineon Technologies
STK14CB16-TF25	Infineon Technologies
S72NS128RD0AHBG43	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm		8 mm	Not Qualified	134217728 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16					8 mm
S71NS128PC0ZJETS3	Infineon Technologies
S72NS128ND0AJW122	Infineon Technologies
S72XS128RD0AHBJ10	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words			1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm		8 mm		134217728 bit	1.7 V						8 mm
S75WS256PEFJF5VS3	Infineon Technologies	MEMORY CIRCUIT	OTHER	115	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words			1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B115	3	1.95 V	1.4 mm		9 mm	Not Qualified	268435456 bit	1.7 V		e1	40	260		12 mm
S72XS128RD0AHBH20	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words			1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-40 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm		8 mm		134217728 bit	1.7 V						8 mm
S72XS128RD0AHBH10	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words			1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm		8 mm		134217728 bit	1.7 V						8 mm
S71GL032N40BHW0K3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B56		3.1 V	1.2 mm		7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 256K X 16					9 mm
S71NS128NB0BJWRN1	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)	BOTTOM	R-PBGA-B56	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V		e2	40	260		9.2 mm
S98NS128PB0HW0013	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words			1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,10X14,20	Other Memory ICs	.5 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V						9.2 mm
S72XS128RD0AHBGE3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm		8 mm	Not Qualified	134217728 bit	1.7 V						8 mm
S71NS256PB0ZJETV2	Infineon Technologies

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.