Infineon Technologies Other Function Memory ICs 1,024

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length	Maximum Access Time
S71NS128NA0BJWSM0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1			9.2 mm
S72VS256RE0AHBHH3	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-40 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm		268435456 bit	1.7 V					8 mm
S72NS128ND0AFW132	Infineon Technologies
S71NS128NA0BJWMD3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1			7.7 mm
S71NS128PB0ZHEJR2	Infineon Technologies
S98WS064RBOHI0010	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B88		1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V					10 mm
S72XS256RE0AHBHE0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm		268435456 bit	1.7 V					8 mm
S72NS512RE0AHGGC3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL		33554432 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	32MX16	32M	-25 Cel		BOTTOM	S-PBGA-B133					Not Qualified	536870912 bit
S70KL1281DABHB033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	16777216 words	3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		3.6 V	1 mm	6 mm		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	8 mm
S72NS512RD0KHFM00	Infineon Technologies
S72NS256RD0KHFL00	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.65 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B128		1.95 V	1.05 mm	12 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16				12 mm
S70KL1281DABHA030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	16777216 words	3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		3.6 V	1 mm	6 mm		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	8 mm
S70KL1281DABHA023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	16777216 words	3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		3.6 V	1 mm	6 mm		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	8 mm
S70KS1281DPBHB020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	16777216 words	1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	8 mm
S71KL512SC0BHA000	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	67108864 words	3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm	6 mm		536870912 bit		HYPER RAM IS ORGANISED AS 8MX8				8 mm
S71GL032NA0BHW0F2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	S-PBGA-B56					Not Qualified								90 ns
S72NS256RD0AHBM03	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16				8 mm
S72XS128RD0AHBJD0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm	Not Qualified	134217728 bit	1.7 V					8 mm
S71NS128PC0ZJETW2	Infineon Technologies
S72NS256ND0AJW7J2	Infineon Technologies
S72XS256RE0AHBH23	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-40 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm		268435456 bit	1.7 V					8 mm
S71NS128PB0ZJETS3	Infineon Technologies
S72NS128ND0AFW1J3	Infineon Technologies
S72XS256RD0AHBHE3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm	Not Qualified	268435456 bit	1.7 V					8 mm
STK14CB16-TF25I	Infineon Technologies
S71KL512SC0BHV000	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	67108864 words	3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24	3		1 mm	6 mm		536870912 bit		HYPER RAM IS ORGANISED AS 8MX8				8 mm
S71NS256PC0ZHETS0	Infineon Technologies
S71GL064NB0BFW0U3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	67108864 bit	2.7 V	PSRAM IS ORGANIZED AS 2M X 16	e1	40	260	9 mm
S72NS512RE0AJGGG0	Infineon Technologies
S71NS256PB0ZHETS2	Infineon Technologies
S71GL064NA0BHWOF0	Infineon Technologies
S71NS256PC0ZJETW3	Infineon Technologies
S71NS128PB0ZHEJR0	Infineon Technologies
S71NS128NA0BJWSE2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1			9.2 mm
S71NS128NA0BJWSF2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1			9.2 mm
S72NS128ND0AJW1J2	Infineon Technologies
S72WS01GSF0YHM150	Infineon Technologies	MEMORY CIRCUIT	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	33554432 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA186,13X17,25	Other Memory ICs	.65 mm	85 Cel	32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B186		1.95 V	1.2 mm	11 mm	Not Qualified	536870912 bit	1.7 V	512 MBIT SDRAM				13 mm	100 ns
S71NS128NA0BJWMF3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1			7.7 mm
S72NS512RD0AHGM03	Infineon Technologies
S71NS128NA0BJWSN2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1			9.2 mm
S71NS256RD0AHKJL0	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES				BALL			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA56,10X14,20	Other Memory ICs	.5 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B56					Not Qualified
S71NS128NA0BJWMM3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1			7.7 mm
S70KL1281DABHB030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	16777216 words	3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		3.6 V	1 mm	6 mm		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	8 mm
S72NS256RD0AHBMC3	Infineon Technologies
S72NS256RD0KHFM40	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.65 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B128		1.95 V	1.05 mm	12 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16				12 mm
S71GL128PC0HH31Y0	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B84		3.1 V	1.2 mm	8 mm	Not Qualified	134217728 bit	2.7 V					11.6 mm
S71NS128PC0ZJETV2	Infineon Technologies
S71GL064NB0BFW0P0	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	S-PBGA-B56					Not Qualified								90 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.