Infineon Technologies Other Function Memory ICs 1,024

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
S71VS064RB0AHTCL3	Infineon Technologies	MEMORY CIRCUIT	OTHER	52			PLASTIC/EPOXY	YES		CMOS						1.8	FLASH+PSRAM	1.8			BGA52,6X10,20	Other Memory ICs		85 Cel			-25 Cel								Not Qualified
S71WS064JA0BFW2A1	Infineon Technologies	MEMORY CIRCUIT	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA80,8X10,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B80					Not Qualified							.00005 Amp		55 ns
S71WS128JC0BFIAA1	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel		BOTTOM	R-PBGA-B84					Not Qualified							.00005 Amp		55 ns
S71WS256JC0BFWTA1	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B84					Not Qualified							.00005 Amp		55 ns
CY7C1374B-166AC	Infineon Technologies
S27KS0641DPBHV020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words	1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	8MX8	8M	-40 Cel		BOTTOM	R-PBGA-B24	3	1.95 V	1 mm	6 mm		67108864 bit	1.7 V						8 mm
CY7C1374B-133BGC	Infineon Technologies
S27KS0641DGBHI033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words	1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	8MX8	8M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		67108864 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S71WS256ND0BFWE22	Infineon Technologies
CY7C1336-10	Infineon Technologies
AM49DL322BGB70IS	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3				Not Qualified				e0		260	.000005 Amp		70 ns
S71WS064JB0BAW2A1	Infineon Technologies	MEMORY CIRCUIT	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA80,8X10,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B80					Not Qualified							.00005 Amp		55 ns
CY7C915NC	Infineon Technologies
MB84VP24491HK-70	Infineon Technologies
CY7C1088-25	Infineon Technologies
S71WS128PC0HF3SL0	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL				1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B84	3				Not Qualified				e1	40	260			80 ns
S71WS064JB0BFI2Y2	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA80,8X10,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel		BOTTOM	R-PBGA-B80					Not Qualified							.00005 Amp		55 ns
S71VS064RB0AHT843	Infineon Technologies
S27KS0641DPBHA023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		8388608 words	1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	8MX8	8M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		67108864 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S71WS256ND0BFWE23	Infineon Technologies
AM49DL324BGB85IT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3				Not Qualified				e0		260	.000005 Amp		85 ns
S71WS512PC0HF3S22	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL				1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B84	3				Not Qualified				e1	40	260			80 ns
AM49DL324BGT70IT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3				Not Qualified				e0		260	.000005 Amp		70 ns
S71WS256PD0HF3HR2	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL				1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B84	3				Not Qualified				e1	40	260			80 ns
S27KL0641DABHA020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		8388608 words	3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	8MX8	8M	-40 Cel		BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm		67108864 bit	2.7 V						8 mm
CY7B157A24LMB	Infineon Technologies
S71WS256ND0BAWE22	Infineon Technologies
S71WS512PC0HF3S23	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL				1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B84	3				Not Qualified				e1	40	260			80 ns
S71VS128RB0AHK8L2	Infineon Technologies
S71WS512PC0HF3S20	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL				1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B84	3				Not Qualified				e1	40	260			80 ns
S71WS256PD0HF3HL0	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL				1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B84	3				Not Qualified				e1	40	260			80 ns
CY62256VL55ZRC	Infineon Technologies
S71WS128JA0BAWAA1	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B84					Not Qualified							.00005 Amp		55 ns
S27KS0641DPBHB023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		8388608 words	1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	8MX8	8M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		67108864 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
AM49DL322BGT70IT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3				Not Qualified				e0		260	.000005 Amp		70 ns
SLE66R35RC	Infineon Technologies	CRYPTO MEMORY				UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD			1024 words				8					70 Cel	1KX8	1K	-25 Cel		UPPER	X-XUUC-N		3.3 V				8192 bit
SLE66R35RNB	Infineon Technologies	CRYPTO MEMORY				UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD			1024 words				8					70 Cel	1KX8	1K	-25 Cel		UPPER	X-XUUC-N		3.3 V				8192 bit
SLE66R35IC	Infineon Technologies	CRYPTO MEMORY				UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD			1024 words				8					70 Cel	1KX8	1K	-25 Cel		UPPER	X-XUUC-N		3.3 V				8192 bit
SLE66R35E7HMCC8	Infineon Technologies	CRYPTO MEMORY		8		RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD			1024 words				8					70 Cel	1KX8	1K	-25 Cel		QUAD	R-XQMA-N8						8192 bit		EEPROM
SLE66R35E7MCC8	Infineon Technologies	CRYPTO MEMORY		8		RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD			1024 words				8					70 Cel	1KX8	1K	-25 Cel		QUAD	R-XQMA-N8						8192 bit		EEPROM
SLE66R35IMCC8	Infineon Technologies	CRYPTO MEMORY		8		RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD			1024 words				8					70 Cel	1KX8	1K	-25 Cel		QUAD	R-XQMA-N8		3.3 V				8192 bit
SLE66R35RMCC2	Infineon Technologies	CRYPTO MEMORY		2		RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD			1024 words				8					70 Cel	1KX8	1K	-25 Cel		DUAL	R-XDMA-N2		3.3 V				8192 bit
SLE66R35E7HNB	Infineon Technologies	CRYPTO MEMORY				UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD			1024 words				8					70 Cel	1KX8	1K	-25 Cel		UPPER	X-XUUC-N						8192 bit		EEPROM
SLE66R35E7HC	Infineon Technologies	CRYPTO MEMORY				UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD			1024 words				8					70 Cel	1KX8	1K	-25 Cel		UPPER	X-XUUC-N						8192 bit		EEPROM
SLE66R35INB	Infineon Technologies	CRYPTO MEMORY				UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD			1024 words				8					70 Cel	1KX8	1K	-25 Cel		UPPER	X-XUUC-N		3.3 V				8192 bit
SLE44C80S-V5-T85-M4	Infineon Technologies
SLE25C04D	Infineon Technologies
SLE44R35SMCC2-2-2	Infineon Technologies

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.