Infineon Technologies Other Function Memory ICs 1,024

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
SLE44C80U-T85-M5	Infineon Technologies
SLE4436EM3	Infineon Technologies
SLE4406SEM3	Infineon Technologies
SLE44C80S-V5-F7-M4	Infineon Technologies
SLE66CX160P-T85M5	Infineon Technologies
SLA25C04D	Infineon Technologies
SLE44C80S-M4	Infineon Technologies
SLE25C04S	Infineon Technologies
SLE66CX160P-F7M5	Infineon Technologies
SLE44C80U-M5	Infineon Technologies
SLE44R35TC	Infineon Technologies
SLE66CX160PM5	Infineon Technologies
SDA2526A2G	Infineon Technologies
SLE66CX160S-M6	Infineon Technologies
SLE44C80S-V5-M4	Infineon Technologies
SLE44R35TMCC2-2-1	Infineon Technologies
SLE44C80U-V5-M5	Infineon Technologies
SLE4466M2	Infineon Technologies
SLE4406SM3	Infineon Technologies
SLA25C04S	Infineon Technologies
SLE44C80U-V5-T85-M5	Infineon Technologies
SLE44R35SMCC2-2-1	Infineon Technologies
SLE44C80S-T85-M4	Infineon Technologies
SDE25X26-5	Infineon Technologies
SLE66CX160S-T85-M6	Infineon Technologies
SLE66CX160S-V5-M6	Infineon Technologies
SDA25X26-5A2G	Infineon Technologies
SLE4436M3	Infineon Technologies
SDA9251X	Infineon Technologies		COMMERCIAL	28	SOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING		100 mA				5		5		SMALL OUTLINE	SOP28,.45	Other Memory ICs	1.27 mm	70 Cel				0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G28						Not Qualified				e0			.005 Amp			25 ns
SLE66CX160S-V5-T85-M6	Infineon Technologies
SLE66CX160S-V5-F7-M6	Infineon Technologies
SDA25X16-5A2G	Infineon Technologies
S71KL512SC0BHB003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		67108864 words			3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24	3		1 mm		6 mm		536870912 bit		HYPER RAM IS ORGANISED AS 8MX8						8 mm
SM2404T-7.5	Infineon Technologies		COMMERCIAL	50	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING		240 mA	1048576 words	1,2,4,8,FP	COMMON			2.5/3.3,3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel		DUAL	R-PDSO-G50				133 MHz		Not Qualified	16777216 bit						.002 Amp	1,2,4,8		4.5 ns
S71KL256SC0BHB003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		33554432 words			3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		32MX8	32M	-40 Cel		BOTTOM	R-PBGA-B24	3		1 mm		6 mm		268435456 bit		HYPER RAM IS ORGANISED AS 8MX8						8 mm
SM2402T-10	Infineon Technologies		COMMERCIAL	44	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING		160 mA	4194304 words	1,2,4,8,FP	COMMON			2.5/3.3,3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	4MX4	4M	0 Cel		DUAL	R-PDSO-G44				100 MHz		Not Qualified	16777216 bit						.002 Amp	1,2,4,8		5 ns
S71GL064NA0BFW0U2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words			3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm		7 mm	Not Qualified	67108864 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260			9 mm	90 ns
S71NS128NA0BJWSD0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					9.2 mm
STK14CC8-RF25	Infineon Technologies
S72NS512RE0AHGG43	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel		32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B133		1.95 V	1 mm		10 mm	Not Qualified	536870912 bit	1.7 V	DRAM IS ORGANISED AS 16M X 16						11 mm
S72NS128RD0KHFG40	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.65 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B128		1.95 V	1.05 mm		12 mm	Not Qualified	134217728 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16						12 mm
S72NS256RD0AHBG43	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm		8 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16						8 mm
S71NS128NA0BJWME0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					7.7 mm
S72NS128RD0AHBG40	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm		8 mm	Not Qualified	134217728 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16						8 mm
S71NS128PC0ZHETV3	Infineon Technologies
S72XS128RD0AHBJD3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm		8 mm	Not Qualified	134217728 bit	1.7 V							8 mm
S72NS256RD0AHBM40	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm		8 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16						8 mm
S71XS256RD0ZHEC42	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		16X16	16	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm		8 mm	Not Qualified	256 bit	1.7 V	PSRAM IS ORGANIZED AS 8M X 16						9.2 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.