Infineon Technologies Other Function Memory ICs 1,024

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length	Maximum Access Time
S71NS128PB0ZHETS2	Infineon Technologies
S72NS256RD0AHBG40	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16				8 mm
S71GL032NA0BFW0Z2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260	9 mm	90 ns
S72NS256RD0KHFG43	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.65 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B128		1.95 V	1.05 mm	12 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16				12 mm
S72NS128RD0KHFL40	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.65 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B128		1.95 V	1.05 mm	12 mm	Not Qualified	134217728 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16				12 mm
S72NS256RD0AJBMG3	Infineon Technologies
S72XS256RD0AHBGD0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm	Not Qualified	268435456 bit	1.7 V					8 mm
S72NS128ND0AFW1K2	Infineon Technologies
S71NS128PB0ZHETW0	Infineon Technologies
S71NS256PC0ZHETS3	Infineon Technologies
S72NS512RD0AHGM00	Infineon Technologies
S71GL064NB0BFW0K0	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	S-PBGA-B56					Not Qualified								90 ns
S72VS256RE0AHBJH3	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-40 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm		268435456 bit	1.7 V					8 mm
S71NS256PB0ZHETV2	Infineon Technologies
S71GL128PC0HH31Y3	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B84		3.1 V	1.2 mm	8 mm	Not Qualified	134217728 bit	2.7 V					11.6 mm
S72NS256ND0AJW7K2	Infineon Technologies
S72NS512RE0AJGLG0	Infineon Technologies
S72NS256RD0AHBL40	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16				8 mm
S71KL256SC0BHA000	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	33554432 words	3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	32MX8	32M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm	6 mm		268435456 bit		HYPER RAM IS ORGANISED AS 8MX8				8 mm
S72NS128ND0AFW1J2	Infineon Technologies
S72XS256RE0AHBH20	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-40 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm		268435456 bit	1.7 V					8 mm
S70KS1281DABHA033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	16777216 words	1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	8 mm
S75WS256PEFJF5VS2	Infineon Technologies	MEMORY CIRCUIT	OTHER	115	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B115	3	1.95 V	1.4 mm	9 mm	Not Qualified	268435456 bit	1.7 V		e1	40	260	12 mm
STK14CB16-RF25	Infineon Technologies
S71NS128NA0BJWMN0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1			7.7 mm
S72NS256RD0KHFG40	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.65 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B128		1.95 V	1.05 mm	12 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16				12 mm
S71NS256RC0AHKJL3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,10X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	8 mm	Not Qualified	268435456 bit	1.7 V	PSRAM IS ORGANISED AS 64 MB(4 MB X 16-BIT)				9.2 mm
S72XS128RD0AHBHE3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm		134217728 bit	1.7 V					8 mm
S71NS256PC0ZHEJR2	Infineon Technologies
S71NS128NA0BJWME2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1			7.7 mm
S72NS256ND0AJW7J3	Infineon Technologies
S71NS256NC0BJWVN1	Infineon Technologies	MEMORY CIRCUIT	OTHER	60	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-25 Cel	Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)	BOTTOM	R-PBGA-B60	3	1.95 V	1.2 mm	10 mm	Not Qualified	268435456 bit	1.7 V		e2	40	260	11 mm
S71NS256PB0ZJETS3	Infineon Technologies
S72NS512RD0AHGG00	Infineon Technologies
S71NS128NA0BJWMN2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1			7.7 mm
S71NS128PB0ZHETS3	Infineon Technologies
S72NS256RD0KHFL03	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.65 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B128		1.95 V	1.05 mm	12 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16				12 mm
S70KS1281DABHB033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	16777216 words	1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	8 mm
S71NS128NA0BJWMF2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1			7.7 mm
S98WS064RBOHI0023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B88		1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V					10 mm
S71NS128NA0BJWSZ3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1			9.2 mm
S72XS256RE0AHBJ20	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-40 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm		268435456 bit	1.7 V					8 mm
S71GL032N40BHW0P3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B56		3.1 V	1.2 mm	7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 256K X 16				9 mm
S71NS256PB0ZHETV0	Infineon Technologies
S72NS256ND0AFW7J2	Infineon Technologies
S71GL032NA0BHW0U3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260	9 mm	90 ns
S70KS1281DABHB030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	16777216 words	1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	8 mm
S71NS256RD0AHKJL3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES				BALL			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA56,10X14,20	Other Memory ICs	.5 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B56					Not Qualified

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.