Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Sector Size (Words) | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Toggle Bit | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | No. of Sectors/Size | Command User Interface | Terminal Finish | I2C Control Byte | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Serial Bus Type | Boot Block | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | Page Size (words) | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Type | Maximum Standby Current | Interleaved Burst Length | Length | Common Flash Interface | Maximum Access Time | Programming Voltage (V) | Data Polling |
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Infineon Technologies |
MEMORY CIRCUIT |
INDUSTRIAL |
24 |
VBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
AEC-Q100 |
BALL |
SYNCHRONOUS |
8388608 words |
1.8 |
8 |
GRID ARRAY, VERY THIN PROFILE |
1 mm |
85 Cel |
8MX8 |
8M |
-40 Cel |
BOTTOM |
R-PBGA-B24 |
1.95 V |
1 mm |
6 mm |
67108864 bit |
1.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
8 mm |
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Infineon Technologies |
MEMORY CIRCUIT |
INDUSTRIAL |
73 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
40 mA |
3 |
FLASH+PSRAM |
3 |
GRID ARRAY, FINE PITCH |
BGA73,10X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B73 |
3 |
Not Qualified |
e0 |
260 |
.000005 Amp |
85 ns |
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Infineon Technologies |
MEMORY CIRCUIT |
OTHER |
84 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
1.8 |
FLASH+PSRAM |
1.8 |
GRID ARRAY, FINE PITCH |
BGA84,10X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-25 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B84 |
3 |
Not Qualified |
e1 |
40 |
260 |
80 ns |
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Infineon Technologies |
CRYPTO MEMORY |
2 |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
1024 words |
8 |
70 Cel |
1KX8 |
1K |
-25 Cel |
DUAL |
R-XDMA-N2 |
3.3 V |
8192 bit |
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Infineon Technologies |
MEMORY CIRCUIT |
INDUSTRIAL |
73 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
40 mA |
3 |
FLASH+PSRAM |
3 |
GRID ARRAY, FINE PITCH |
BGA73,10X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B73 |
3 |
Not Qualified |
e0 |
260 |
.000005 Amp |
70 ns |
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Infineon Technologies |
MEMORY CIRCUIT |
INDUSTRIAL |
24 |
VBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
8388608 words |
1.8 |
8 |
GRID ARRAY, VERY THIN PROFILE |
1 mm |
85 Cel |
8MX8 |
8M |
-40 Cel |
BOTTOM |
R-PBGA-B24 |
1.95 V |
1 mm |
6 mm |
67108864 bit |
1.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
8 mm |
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Infineon Technologies |
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Infineon Technologies |
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Infineon Technologies |
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Infineon Technologies |
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Infineon Technologies |
MEMORY CIRCUIT |
INDUSTRIAL |
84 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
60 mA |
1.8 |
FLASH+PSRAM |
1.8 |
GRID ARRAY, FINE PITCH |
BGA84,10X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-40 Cel |
BOTTOM |
R-PBGA-B84 |
Not Qualified |
.00005 Amp |
55 ns |
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Infineon Technologies |
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Infineon Technologies |
MEMORY CIRCUIT |
INDUSTRIAL |
24 |
VBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
8388608 words |
1.8 |
8 |
GRID ARRAY, VERY THIN PROFILE |
1 mm |
85 Cel |
8MX8 |
8M |
-40 Cel |
BOTTOM |
R-PBGA-B24 |
1.95 V |
1 mm |
6 mm |
67108864 bit |
1.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
8 mm |
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Infineon Technologies |
MEMORY CIRCUIT |
OTHER |
56 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
1.8 |
FLASH+PSRAM |
1.8 |
GRID ARRAY, FINE PITCH |
BGA56,10X14,20 |
Other Memory ICs |
.5 mm |
85 Cel |
-25 Cel |
BOTTOM |
R-PBGA-B56 |
Not Qualified |
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Infineon Technologies |
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Infineon Technologies |
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Infineon Technologies |
MEMORY CIRCUIT |
INDUSTRIAL |
24 |
VBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
AEC-Q100 |
BALL |
SYNCHRONOUS |
8388608 words |
1.8 |
8 |
GRID ARRAY, VERY THIN PROFILE |
1 mm |
85 Cel |
8MX8 |
8M |
-40 Cel |
BOTTOM |
R-PBGA-B24 |
1.95 V |
1 mm |
6 mm |
67108864 bit |
1.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
8 mm |
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Infineon Technologies |
MEMORY CIRCUIT |
OTHER |
84 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
1.8 |
FLASH+PSRAM |
1.8 |
GRID ARRAY, FINE PITCH |
BGA84,10X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-25 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B84 |
3 |
Not Qualified |
e1 |
40 |
260 |
80 ns |
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Infineon Technologies |
MEMORY CIRCUIT |
INDUSTRIAL |
73 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
40 mA |
3 |
FLASH+PSRAM |
3 |
GRID ARRAY, FINE PITCH |
BGA73,10X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B73 |
3 |
Not Qualified |
e0 |
260 |
.000005 Amp |
70 ns |
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Infineon Technologies |
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Infineon Technologies |
MEMORY CIRCUIT |
OTHER |
56 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
1.8 |
FLASH+PSRAM |
1.8 |
GRID ARRAY, FINE PITCH |
BGA56,10X14,20 |
Other Memory ICs |
.5 mm |
85 Cel |
-25 Cel |
BOTTOM |
R-PBGA-B56 |
Not Qualified |
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Infineon Technologies |
MEMORY CIRCUIT |
INDUSTRIAL |
80 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
60 mA |
1.8 |
FLASH+PSRAM |
1.8 |
GRID ARRAY, FINE PITCH |
BGA80,8X10,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-40 Cel |
BOTTOM |
R-PBGA-B80 |
Not Qualified |
.00005 Amp |
55 ns |
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Infineon Technologies |
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Infineon Technologies |
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Infineon Technologies |
MEMORY CIRCUIT |
INDUSTRIAL |
80 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
60 mA |
1.8 |
FLASH+PSRAM |
1.8 |
GRID ARRAY, FINE PITCH |
BGA80,8X10,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-40 Cel |
BOTTOM |
R-PBGA-B80 |
Not Qualified |
.00005 Amp |
55 ns |
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Infineon Technologies |
MEMORY CIRCUIT |
OTHER |
52 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
4194304 words |
1.8 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.5 mm |
85 Cel |
4MX16 |
4M |
-25 Cel |
BOTTOM |
R-PBGA-B52 |
1.95 V |
1 mm |
5 mm |
67108864 bit |
1.7 V |
6 mm |
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Infineon Technologies |
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Infineon Technologies |
MEMORY CIRCUIT |
INDUSTRIAL |
24 |
VBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
8388608 words |
1.8 |
8 |
GRID ARRAY, VERY THIN PROFILE |
1 mm |
85 Cel |
8MX8 |
8M |
-40 Cel |
BOTTOM |
R-PBGA-B24 |
1.95 V |
1 mm |
6 mm |
67108864 bit |
1.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
8 mm |
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Infineon Technologies |
MEMORY CIRCUIT |
OTHER |
84 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
60 mA |
1.8 |
FLASH+PSRAM |
1.8 |
GRID ARRAY, FINE PITCH |
BGA84,10X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-25 Cel |
BOTTOM |
R-PBGA-B84 |
Not Qualified |
.00005 Amp |
55 ns |
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Infineon Technologies |
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Infineon Technologies |
MEMORY CIRCUIT |
OTHER |
80 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
60 mA |
1.8 |
FLASH+PSRAM |
1.8 |
GRID ARRAY, FINE PITCH |
BGA80,8X10,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-25 Cel |
BOTTOM |
R-PBGA-B80 |
Not Qualified |
.00005 Amp |
55 ns |
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Infineon Technologies |
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Infineon Technologies |
MEMORY CIRCUIT |
OTHER |
84 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
1.8 |
FLASH+PSRAM |
1.8 |
GRID ARRAY, FINE PITCH |
BGA84,10X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-25 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B84 |
3 |
Not Qualified |
e1 |
40 |
260 |
80 ns |
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Infineon Technologies |
MEMORY CIRCUIT |
INDUSTRIAL |
56 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
4194304 words |
3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
.8 mm |
85 Cel |
4MX16 |
4M |
-40 Cel |
BOTTOM |
R-PBGA-B56 |
3.6 V |
1.2 mm |
7 mm |
67108864 bit |
2.7 V |
PSEUDO STATIC RAM IS ORGANISED AS 2M X 16 |
NOT SPECIFIED |
NOT SPECIFIED |
9 mm |
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Infineon Technologies |
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Infineon Technologies |
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Infineon Technologies |
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Infineon Technologies |
MEMORY CIRCUIT |
OTHER |
84 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
1.8 |
FLASH+PSRAM |
1.8 |
GRID ARRAY, FINE PITCH |
BGA84,10X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-25 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B84 |
3 |
Not Qualified |
e1 |
40 |
260 |
80 ns |
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Infineon Technologies |
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Infineon Technologies |
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Infineon Technologies |
MEMORY CIRCUIT |
OTHER |
84 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
1.8 |
FLASH+PSRAM |
1.8 |
GRID ARRAY, FINE PITCH |
BGA84,10X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-25 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B84 |
3 |
Not Qualified |
e1 |
40 |
260 |
80 ns |
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Infineon Technologies |
MEMORY CIRCUIT |
INDUSTRIAL |
73 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
40 mA |
3 |
FLASH+PSRAM |
3 |
GRID ARRAY, FINE PITCH |
BGA73,10X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B73 |
3 |
Not Qualified |
e0 |
260 |
.000005 Amp |
70 ns |
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Infineon Technologies |
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Infineon Technologies |
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Infineon Technologies |
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Infineon Technologies |
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Infineon Technologies |
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Infineon Technologies |
Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.
One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.
Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.
Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.