Infineon Technologies Other Function Memory ICs 1,024

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
S71NS128PC0ZHEJR3	Infineon Technologies
S98NS128PB0HW0010	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words			1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,10X14,20	Other Memory ICs	.5 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V							9.2 mm
S71NS128NA0BJWMW0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					7.7 mm
S72NS512RE0KHFG43	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.65 mm	85 Cel		32MX16	32M	-25 Cel		BOTTOM	S-PBGA-B128		1.95 V	1.05 mm		12 mm	Not Qualified	536870912 bit	1.7 V	DRAM IS ORGANISED AS 16M X 16						12 mm
S71KL256SC0BHV003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words			3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		32MX8	32M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm		6 mm		268435456 bit		HYPER RAM IS ORGANISED AS 8MX8						8 mm
S71GL064NA0BHW0U2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words			3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm		7 mm	Not Qualified	67108864 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260			9 mm	90 ns
S71NS128PB0ZJETS2	Infineon Technologies
S71NS128NA0BJWRN1	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)	BOTTOM	R-PBGA-B56	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V		e2	40	260			9.2 mm
S72XS128RD0AHBHD0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm		8 mm		134217728 bit	1.7 V							8 mm
S71XS256RD0ZHEC03	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		16X16	16	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm		8 mm	Not Qualified	256 bit	1.7 V	PSRAM IS ORGANIZED AS 8M X 16						9.2 mm
S71GL064NA0BHW0Z0	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words			3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm		7 mm	Not Qualified	67108864 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260			9 mm	90 ns
SM2604T-7.5	Infineon Technologies		COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			4194304 words	1,2,4,8,FP	COMMON			2.5/3.3,3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel		DUAL	R-PDSO-G54				133 MHz		Not Qualified	67108864 bit							1,2,4,8		4.5 ns
S72XS256RD0AHBJE0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm		8 mm	Not Qualified	268435456 bit	1.7 V							8 mm
S71GL032N40BHW0K0	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B56		3.1 V	1.2 mm		7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 256K X 16						9 mm
S71NS128NA0BJWME3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					7.7 mm
S72NS256ND0AFW720	Infineon Technologies
S72WS01GSF0YHM152	Infineon Technologies	MEMORY CIRCUIT	OTHER	186	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA186,13X17,25	Other Memory ICs	.65 mm	85 Cel		32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B186		1.95 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.7 V	512 MBIT SDRAM						13 mm	100 ns
S70KL1281DABHA020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		16777216 words			3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		3.6 V	1 mm		6 mm		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm
S72XS128RD0AHBGD3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm		8 mm	Not Qualified	134217728 bit	1.7 V							8 mm
S71KL256SC0BHI003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words			3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		32MX8	32M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm		6 mm		268435456 bit		HYPER RAM IS ORGANISED AS 8MX8						8 mm
S71GL032NA0BHW0Z2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		2097152 words			3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm		7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260			9 mm	90 ns
S71XS256RD0ZHEC43	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		16X16	16	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm		8 mm	Not Qualified	256 bit	1.7 V	PSRAM IS ORGANIZED AS 8M X 16						9.2 mm
S98WS064RBOHW0023	Infineon Technologies	MEMORY CIRCUIT	OTHER	88	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		4194304 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B88		1.95 V	1.2 mm		8 mm	Not Qualified	67108864 bit	1.7 V							10 mm
S71NS128NA0BJWSY2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					9.2 mm
S72NS512RE0AJGGG3	Infineon Technologies
S71NS128NA0BJWSD2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					9.2 mm
S72XS128RD0AHBH23	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-40 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm		8 mm		134217728 bit	1.7 V							8 mm
S71KL512SC0BHB000	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		67108864 words			3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24	3		1 mm		6 mm		536870912 bit		HYPER RAM IS ORGANISED AS 8MX8						8 mm
S71NS128PC0ZHEJR0	Infineon Technologies
S71NS128NA0BJWMW3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					7.7 mm
S70KS1281DGBHV033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words			1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm		6 mm		134217728 bit	1.7 V							8 mm
S71KL256SC0BHI000	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words			3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		32MX8	32M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm		6 mm		268435456 bit		HYPER RAM IS ORGANISED AS 8MX8						8 mm
S70KS1281DABHV033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words			1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm		6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm
S72NS128RD0KHFM03	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.65 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B128		1.95 V	1.05 mm		12 mm	Not Qualified	134217728 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16						12 mm
S71NS128PC0ZJETW3	Infineon Technologies
S72XS256RD0AHBGD3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm		8 mm	Not Qualified	268435456 bit	1.7 V							8 mm
S71NS128NA0BJWMY3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					7.7 mm
S70KS1281DABHI030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words			1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm		6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm
S72NS256RD0AHBLC3	Infineon Technologies
SM2403T-10	Infineon Technologies		COMMERCIAL	44	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING		160 mA	2097152 words	1,2,4,8,FP	COMMON			2.5/3.3,3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	2MX8	2M	0 Cel		DUAL	R-PDSO-G44				100 MHz		Not Qualified	16777216 bit						.002 Amp	1,2,4,8		5 ns
S71NS256PB0ZHEJR0	Infineon Technologies
S71NS128NA0BJWMP0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					7.7 mm
S71NS128PC0ZJETS2	Infineon Technologies
S71NS064NA0BJWUN0	Infineon Technologies
S98WS064RBOHW0020	Infineon Technologies	MEMORY CIRCUIT	OTHER	88	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		4194304 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B88		1.95 V	1.2 mm		8 mm	Not Qualified	67108864 bit	1.7 V							10 mm
S71NS128NA0BJWSD3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					9.2 mm
S71NS128PB0ZHETS0	Infineon Technologies
S71NS128PB0ZHETV3	Infineon Technologies

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.