Infineon Technologies Other Function Memory ICs 1,024

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
S72XS256RE0AHBHD3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words			1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm		8 mm		268435456 bit	1.7 V							8 mm
S72NS256ND0AJW723	Infineon Technologies
SM2603T-10	Infineon Technologies		COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			8388608 words	1,2,4,8,FP	COMMON			2.5/3.3,3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	8MX8	8M	0 Cel		DUAL	R-PDSO-G54				100 MHz		Not Qualified	67108864 bit							1,2,4,8		4.7 ns
S71GL032NA0BHW0U0	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		2097152 words			3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm		7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260			9 mm	90 ns
S72NS512NE0ZJW723	Infineon Technologies
S71XS256RD0ZHEC00	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		16X16	16	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm		8 mm	Not Qualified	256 bit	1.7 V	PSRAM IS ORGANIZED AS 8M X 16						9.2 mm
S72NS128ND0AFW120	Infineon Technologies
S72NS512NE0ZJW7J2	Infineon Technologies
S72NS512RE0AJGG00	Infineon Technologies
S72XS256RD0AHBJD0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm		8 mm	Not Qualified	268435456 bit	1.7 V							8 mm
S72NS128ND0AJW1J3	Infineon Technologies
SM2402T-7.5	Infineon Technologies		COMMERCIAL	44	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING		240 mA	4194304 words	1,2,4,8,FP	COMMON			2.5/3.3,3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	4MX4	4M	0 Cel		DUAL	R-PDSO-G44				133 MHz		Not Qualified	16777216 bit						.002 Amp	1,2,4,8		4.5 ns
S70KS1281DGBHI030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words			1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm		6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm
S71NS064NA0BJWUN2	Infineon Technologies
S71GL032N40BHW0P2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B56		3.1 V	1.2 mm		7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 256K X 16						9 mm
S72NS256RD0KHFM00	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.65 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B128		1.95 V	1.05 mm		12 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16						12 mm
S72NS512RE0AHGL43	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel		32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B133		1.95 V	1 mm		10 mm	Not Qualified	536870912 bit	1.7 V	DRAM IS ORGANISED AS 16M X 16						11 mm
S72XS128RD0AHBGD0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm		8 mm	Not Qualified	134217728 bit	1.7 V							8 mm
S71NS128NA0BJWSZ2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					9.2 mm
SM2604T-6	Infineon Technologies		COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			4194304 words	1,2,4,8,FP	COMMON			2.5/3.3,3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel		DUAL	R-PDSO-G54				166 MHz		Not Qualified	67108864 bit							1,2,4,8		4.3 ns
S72NS512RE0AJGL03	Infineon Technologies
S72XS256RD0AHBGE3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm		8 mm	Not Qualified	268435456 bit	1.7 V							8 mm
S72NS256RD0KHFG03	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.65 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B128		1.95 V	1.05 mm		12 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16						12 mm
S72NS128ND0AJW1J0	Infineon Technologies
S70KS1281DGBHB030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		16777216 words			1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm		6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm
S72NS256ND0AFW733	Infineon Technologies
S71NS128PB0ZHETW2	Infineon Technologies
S72NS128RD0AHBMC0	Infineon Technologies
S72NS512NE0ZJW7K3	Infineon Technologies
S71NS128NA0BJWMZ0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					7.7 mm
S72NS128RD0AJBMG0	Infineon Technologies
S72NS512RE0AJGLG3	Infineon Technologies
S72NS256RD0AJBMG0	Infineon Technologies
S70KS1281DGBHV030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words			1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm		6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm
S70KS1281DGBHI033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words			1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm		6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm
S72XS128RD0AHBJE0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm		8 mm	Not Qualified	134217728 bit	1.7 V							8 mm
S72NS128RD0AJBGG3	Infineon Technologies
S72NS512RE0KHFG40	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.65 mm	85 Cel		32MX16	32M	-25 Cel		BOTTOM	S-PBGA-B128		1.95 V	1.05 mm		12 mm	Not Qualified	536870912 bit	1.7 V	DRAM IS ORGANISED AS 16M X 16						12 mm
S71NS512PD0ZHEUR3	Infineon Technologies
S71NS128PB0ZHETV0	Infineon Technologies
S72NS512NE0ZJW7J3	Infineon Technologies
S72XS01GSF0YHMG50	Infineon Technologies	MEMORY CIRCUIT	OTHER	186				PLASTIC/EPOXY	YES		CMOS								1.8	FLASH+SDRAM	1.8			BGA186,13X17,25	Other Memory ICs		85 Cel				-25 Cel									Not Qualified
S71NS128PB0ZJEJR2	Infineon Technologies
S72NS128RD0AJBLG3	Infineon Technologies
S72NS128RD0AHBL43	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm		8 mm	Not Qualified	134217728 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16						8 mm
S71GL032NA0BHW0Z0	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		2097152 words			3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm		7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260			9 mm	90 ns
S71NS128PC0ZHEJR2	Infineon Technologies
S71NS256PC0ZHETV3	Infineon Technologies

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.