Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Sector Size (Words) | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Toggle Bit | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | No. of Sectors/Size | Command User Interface | Terminal Finish | I2C Control Byte | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Serial Bus Type | Boot Block | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | Page Size (words) | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Type | Maximum Standby Current | Interleaved Burst Length | Length | Common Flash Interface | Maximum Access Time | Programming Voltage (V) | Data Polling |
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Renesas Electronics |
MEMORY CIRCUIT |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SYNCHRONOUS |
524288 words |
1.8 |
8 |
SMALL OUTLINE |
SOP8,.3 |
1.27 mm |
85 Cel |
512KX8 |
512K |
-40 Cel |
TIN |
DUAL |
R-PDSO-G8 |
3 |
2 V |
2.16 mm |
5.18 mm |
4194304 bit |
1.71 V |
e3 |
260 |
5.23 mm |
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Renesas Electronics |
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Renesas Electronics |
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Renesas Electronics |
MEMORY CIRCUIT |
OTHER |
85 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
HYBRID |
BALL |
35 mA |
FLASH+SRAM |
1.8,3.3 |
GRID ARRAY, FINE PITCH |
BGA85,10X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-25 Cel |
BOTTOM |
R-PBGA-B85 |
Not Qualified |
.00001 Amp |
85 ns |
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Renesas Electronics |
COMMERCIAL |
28 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
80 mA |
5 |
5 |
IN-LINE |
ZIP28,.1 |
Other Memory ICs |
1.27 mm |
70 Cel |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T28 |
Not Qualified |
e0 |
.08 Amp |
18 ns |
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|
Renesas Electronics |
MEMORY CIRCUIT |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SYNCHRONOUS |
524288 words |
1.8 |
8 |
SMALL OUTLINE |
SOP8,.3 |
1.27 mm |
105 Cel |
512KX8 |
512K |
-40 Cel |
TIN |
DUAL |
R-PDSO-G8 |
3 |
2 V |
2.16 mm |
5.18 mm |
4194304 bit |
1.71 V |
e3 |
260 |
5.23 mm |
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Renesas Electronics |
VIDEO DRAM |
COMMERCIAL |
40 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
205 mA |
262144 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ40,.44 |
Other Memory ICs |
1.27 mm |
70 Cel |
256KX8 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J40 |
Not Qualified |
2097152 bit |
e0 |
.0002 Amp |
70 ns |
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Renesas Electronics |
MEMORY CIRCUIT |
COMMERCIAL |
77 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
HYBRID |
BALL |
45 mA |
FLASH+SRAM |
2.6/3 |
GRID ARRAY, FINE PITCH |
BGA77,8X14,32 |
Other Memory ICs |
.8 mm |
70 Cel |
-20 Cel |
BOTTOM |
R-PBGA-B77 |
Not Qualified |
.00001 Amp |
100 ns |
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Renesas Electronics |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
40 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
Other Memory ICs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
Not Qualified |
262144 bit |
e0 |
.0005 Amp |
150 ns |
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Renesas Electronics |
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Renesas Electronics |
INDUSTRIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
IN-LINE |
DIP24,.6 |
Other Memory ICs |
2.54 mm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T24 |
Not Qualified |
e0 |
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Renesas Electronics |
MEMORY CIRCUIT |
COMMERCIAL |
112 |
DIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
820 mA |
524288 words |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
DIMM112 |
Other Memory ICs |
1.27 mm |
70 Cel |
512KX32 |
512K |
0 Cel |
DUAL |
R-PDMA-N112 |
Not Qualified |
16777216 bit |
.008 Amp |
70 ns |
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Renesas Electronics |
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Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
55 mA |
65536 words |
COMMON |
3.3,5 |
32 |
FLATPACK |
QFP100,.55X.8 |
Other Memory ICs |
.635 mm |
70 Cel |
3-STATE |
64KX32 |
64K |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
R-PQFP-G100 |
Not Qualified |
2097152 bit |
e0 |
.0001 Amp |
6 ns |
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Renesas Electronics |
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Renesas Electronics |
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Renesas Electronics |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
Other Memory ICs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
Not Qualified |
262144 bit |
e0 |
.0001 Amp |
120 ns |
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Renesas Electronics |
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Renesas Electronics |
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Renesas Electronics |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2280 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
1207959552 bit |
.036 Amp |
8.5 ns |
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Renesas Electronics |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1980 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
1207959552 bit |
.036 Amp |
8 ns |
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Renesas Electronics |
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Renesas Electronics |
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Renesas Electronics |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1324 mA |
4194304 words |
COMMON |
5 |
5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
4MX72 |
4M |
0 Cel |
DUAL |
R-PDMA-N168 |
25.4 mm |
Not Qualified |
301989888 bit |
.082 Amp |
80 ns |
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|
Renesas Electronics |
MEMORY CIRCUIT |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SYNCHRONOUS |
524288 words |
3 |
8 |
SMALL OUTLINE |
SOP8,.3 |
1.27 mm |
105 Cel |
512KX8 |
512K |
-40 Cel |
TIN |
DUAL |
R-PDSO-G8 |
3 |
3.6 V |
2.16 mm |
5.18 mm |
4194304 bit |
2.7 V |
e3 |
260 |
5.23 mm |
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Renesas Electronics |
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Renesas Electronics |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
65 mA |
8192 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
Other Memory ICs |
2.54 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
Not Qualified |
65536 bit |
e0 |
120 ns |
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Renesas Electronics |
MEMORY CIRCUIT |
COMMERCIAL |
77 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
HYBRID |
BALL |
45 mA |
FLASH+SRAM |
2.6/3 |
GRID ARRAY, FINE PITCH |
BGA77,8X14,32 |
Other Memory ICs |
.8 mm |
70 Cel |
-20 Cel |
BOTTOM |
R-PBGA-B77 |
Not Qualified |
.00001 Amp |
90 ns |
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Renesas Electronics |
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Renesas Electronics |
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Renesas Electronics |
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Renesas Electronics |
MEMORY CIRCUIT |
OTHER |
48 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
HYBRID |
BALL |
70 mA |
FLASH+SRAM |
3/3.3 |
GRID ARRAY |
BGA48,6X8,40 |
Other Memory ICs |
1 mm |
85 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B48 |
Not Qualified |
e0 |
.00002 Amp |
100 ns |
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|
Renesas Electronics |
MEMORY CIRCUIT |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
512 words |
3.3 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
.5 mm |
85 Cel |
512X8 |
512 |
-40 Cel |
Matte Tin (Sn) |
DUAL |
R-PDSO-N8 |
3.6 V |
.8 mm |
2 mm |
4096 bit |
2.2 V |
e3 |
30 |
260 |
3 mm |
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Renesas Electronics |
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Renesas Electronics |
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Renesas Electronics |
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Renesas Electronics |
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Renesas Electronics |
MEMORY CIRCUIT |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
524288 words |
1.8 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.25 |
1.27 mm |
105 Cel |
512KX8 |
512K |
-40 Cel |
TIN |
DUAL |
R-PDSO-N8 |
3 |
2 V |
.8 mm |
5 mm |
4194304 bit |
1.71 V |
e3 |
260 |
6 mm |
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Renesas Electronics |
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Renesas Electronics |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
60 mA |
5 |
5 |
IN-LINE |
DIP24,.4 |
Other Memory ICs |
2.54 mm |
70 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T24 |
Not Qualified |
e0 |
.06 Amp |
40 ns |
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Renesas Electronics |
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Renesas Electronics |
MEMORY CIRCUIT |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
160 mA |
262144 words |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ28,.44 |
Other Memory ICs |
1.27 mm |
70 Cel |
256KX4 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J28 |
Not Qualified |
1048576 bit |
e0 |
.004 Amp |
80 ns |
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Renesas Electronics |
MEMORY CIRCUIT |
COMMERCIAL |
40 |
TSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
200 mA |
262144 words |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP40/44,.46,32 |
Other Memory ICs |
.8 mm |
70 Cel |
256KX8 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G40 |
Not Qualified |
2097152 bit |
e0 |
.001 Amp |
80 ns |
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Renesas Electronics |
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Renesas Electronics |
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Renesas Electronics |
MEMORY CIRCUIT |
COMMERCIAL |
61 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
1048576 words |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
.8 mm |
70 Cel |
1MX16 |
1M |
-20 Cel |
BOTTOM |
R-PBGA-B61 |
3 V |
1.2 mm |
7 mm |
Not Qualified |
16777216 bit |
2.6 V |
SRAM CONFIGURATION IS 256K X 16 |
9 mm |
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Renesas Electronics |
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Renesas Electronics |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
990 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
603979776 bit |
.018 Amp |
8 ns |
Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.
One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.
Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.
Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.