Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Sector Size (Words) | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Toggle Bit | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | No. of Sectors/Size | Command User Interface | Terminal Finish | I2C Control Byte | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Serial Bus Type | Boot Block | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | Page Size (words) | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Type | Maximum Standby Current | Interleaved Burst Length | Length | Common Flash Interface | Maximum Access Time | Programming Voltage (V) | Data Polling |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba |
VIDEO DRAM |
COMMERCIAL |
40 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
45 mA |
131072 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ40,.44 |
Other Memory ICs |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J40 |
Not Qualified |
1048576 bit |
e0 |
.01 Amp |
120 ns |
|||||||||||||||||||||||||||||||||||||||||||
Toshiba |
COMMERCIAL |
168 |
DIMM |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1180 mA |
2097152 words |
NO |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
2MX72 |
2M |
0 Cel |
DUAL |
R-PDMA-N168 |
25.4 mm |
Not Qualified |
150994944 bit |
.0145 Amp |
60 ns |
|||||||||||||||||||||||||||||||||||||||||
Toshiba |
MEMORY CIRCUIT |
OTHER |
48 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
HYBRID |
BALL |
60 mA |
FLASH+SRAM |
3/3.3 |
GRID ARRAY |
BGA48,6X8,40 |
Other Memory ICs |
1 mm |
85 Cel |
-25 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B48 |
Not Qualified |
e0 |
.00003 Amp |
100 ns |
||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
MEMORY CIRCUIT |
OTHER |
48 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
40 mA |
131072 words |
3 |
FLASH+SRAM |
3/3.3 |
8 |
GRID ARRAY, LOW PROFILE |
BGA48,6X8,40 |
Other Memory ICs |
1 mm |
85 Cel |
128KX8 |
128K |
-20 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1.6 mm |
10 mm |
Not Qualified |
1048576 bit |
2.7 V |
e0 |
.00003 Amp |
14 mm |
100 ns |
|||||||||||||||||||||||||||||||||||
Toshiba |
COMMERCIAL |
32 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
70 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP32,.8,20 |
Other Memory ICs |
.5 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
Not Qualified |
1048576 bit |
e0 |
.0002 Amp |
80 ns |
|||||||||||||||||||||||||||||||||||||||||
Toshiba |
MEMORY CIRCUIT |
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
MEMORY CIRCUIT |
OTHER |
48 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
HYBRID |
BALL |
40 mA |
FLASH+SRAM |
3/3.3 |
GRID ARRAY |
BGA48,6X8,40 |
Other Memory ICs |
1 mm |
85 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B48 |
Not Qualified |
e0 |
.00003 Amp |
100 ns |
||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
MEMORY CIRCUIT |
INDUSTRIAL |
69 |
LFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
50 mA |
2097152 words |
3 |
FLASH+SRAM |
3/3.3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA69,10X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
2MX16 |
2M |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B69 |
3.6 V |
1.4 mm |
9 mm |
Not Qualified |
33554432 bit |
2.7 V |
USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 256K X 16 OR 512K X 8 |
e0 |
12 mm |
70 ns |
|||||||||||||||||||||||||||||||||||
Toshiba |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
60 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
3 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
Not Qualified |
1048576 bit |
e0 |
.0001 Amp |
100 ns |
|||||||||||||||||||||||||||||||||||||||||
Toshiba |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
60 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
Not Qualified |
1048576 bit |
e0 |
.0002 Amp |
100 ns |
|||||||||||||||||||||||||||||||||||||||||
Toshiba |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
MEMORY CIRCUIT |
OTHER |
69 |
LFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
50 mA |
2097152 words |
3 |
FLASH+SRAM |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA69,10X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
2MX16 |
2M |
-30 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B69 |
3.3 V |
1.4 mm |
9 mm |
Not Qualified |
33554432 bit |
2.67 V |
USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 512K X 16 OR 1M X 8 |
e0 |
12 mm |
90 ns |
|||||||||||||||||||||||||||||||||||
Toshiba |
MEMORY CIRCUIT |
OTHER |
48 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
HYBRID |
BALL |
40 mA |
FLASH+SRAM |
3/3.3 |
GRID ARRAY |
BGA48,6X8,40 |
Other Memory ICs |
1 mm |
85 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B48 |
Not Qualified |
e0 |
.00003 Amp |
100 ns |
||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
MEMORY CIRCUIT |
OTHER |
48 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
HYBRID |
BALL |
40 mA |
FLASH+SRAM |
3/3.3 |
GRID ARRAY |
BGA48,6X8,40 |
Other Memory ICs |
1 mm |
85 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B48 |
Not Qualified |
e0 |
.00003 Amp |
100 ns |
||||||||||||||||||||||||||||||||||||||||||||||||
|
Toshiba |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
2/6 |
SMALL OUTLINE |
SOP16,.3 |
Other Memory ICs |
1.27 mm |
85 Cel |
-40 Cel |
DUAL |
R-PDSO-G16 |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
COMMERCIAL |
32 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
60 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP32,.8,20 |
Other Memory ICs |
.5 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
Not Qualified |
1048576 bit |
e0 |
.0002 Amp |
80 ns |
|||||||||||||||||||||||||||||||||||||||||
Toshiba |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
70 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
3 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
Not Qualified |
1048576 bit |
e0 |
.0001 Amp |
80 ns |
|||||||||||||||||||||||||||||||||||||||||
Toshiba |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
70 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.5 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
3 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
Not Qualified |
1048576 bit |
e0 |
.0001 Amp |
80 ns |
|||||||||||||||||||||||||||||||||||||||||
Toshiba |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
MEMORY CIRCUIT |
OTHER |
48 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
HYBRID |
BALL |
40 mA |
FLASH+SRAM |
3/3.3 |
GRID ARRAY |
BGA48,6X8,40 |
Other Memory ICs |
1 mm |
85 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B48 |
Not Qualified |
e0 |
.00003 Amp |
100 ns |
||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
60 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
Other Memory ICs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
Not Qualified |
1048576 bit |
e0 |
.0002 Amp |
100 ns |
|||||||||||||||||||||||||||||||||||||||||
Toshiba |
VIDEO DRAM |
COMMERCIAL |
40 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
45 mA |
131072 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ40,.44 |
Other Memory ICs |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J40 |
Not Qualified |
1048576 bit |
e0 |
.01 Amp |
120 ns |
|||||||||||||||||||||||||||||||||||||||||||
Toshiba |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1630 mA |
4194304 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
4MX72 |
4M |
0 Cel |
DUAL |
R-PDMA-N168 |
25.4 mm |
Not Qualified |
301989888 bit |
.019 Amp |
60 ns |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
60 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.5 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
Not Qualified |
1048576 bit |
e0 |
.0002 Amp |
100 ns |
|||||||||||||||||||||||||||||||||||||||||
Toshiba |
COMMERCIAL |
32 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
60 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP32,.8,20 |
Other Memory ICs |
.5 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
Not Qualified |
1048576 bit |
e0 |
.0002 Amp |
100 ns |
|||||||||||||||||||||||||||||||||||||||||
Toshiba |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
MEMORY CIRCUIT |
OTHER |
48 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
40 mA |
1048576 words |
3 |
FLASH+SRAM |
3/3.3 |
8 |
GRID ARRAY, LOW PROFILE |
BGA48,6X8,40 |
Other Memory ICs |
1 mm |
85 Cel |
1MX8 |
1M |
-20 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1.6 mm |
10 mm |
Not Qualified |
8388608 bit |
2.7 V |
SRAM IS CONFIGURED AS 128 K X 8 |
e0 |
.00004 Amp |
12 mm |
100 ns |
||||||||||||||||||||||||||||||||||
Toshiba |
MEMORY CIRCUIT |
OTHER |
48 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
HYBRID |
BALL |
40 mA |
FLASH+SRAM |
3/3.3 |
GRID ARRAY |
BGA48,6X8,40 |
Other Memory ICs |
1 mm |
85 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B48 |
Not Qualified |
e0 |
.00003 Amp |
100 ns |
||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
MEMORY CIRCUIT |
OTHER |
48 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
1048576 words |
3 |
8 |
GRID ARRAY, LOW PROFILE |
1 mm |
85 Cel |
1MX8 |
1M |
-20 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1.6 mm |
10 mm |
Not Qualified |
8388608 bit |
2.7 V |
SRAM IS CONFIGURED AS 128 K X 8 |
e0 |
12 mm |
|||||||||||||||||||||||||||||||||||||||||
Toshiba |
MEMORY CIRCUIT |
OTHER |
48 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
40 mA |
1048576 words |
3 |
FLASH+SRAM |
3/3.3 |
8 |
GRID ARRAY, LOW PROFILE |
BGA48,6X8,40 |
Other Memory ICs |
1 mm |
85 Cel |
1MX8 |
1M |
-20 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1.6 mm |
10 mm |
Not Qualified |
8388608 bit |
2.7 V |
SRAM IS CONFIGURED AS 128 K X 8 |
e0 |
.00004 Amp |
12 mm |
100 ns |
||||||||||||||||||||||||||||||||||
Toshiba |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
MEMORY CIRCUIT |
OTHER |
48 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
HYBRID |
BALL |
40 mA |
FLASH+SRAM |
3/3.3 |
GRID ARRAY |
BGA48,6X8,40 |
Other Memory ICs |
1 mm |
85 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B48 |
Not Qualified |
e0 |
.00003 Amp |
100 ns |
||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
MEMORY CIRCUIT |
OTHER |
69 |
LFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
50 mA |
2097152 words |
3 |
FLASH+SRAM |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA69,10X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
2MX16 |
2M |
-30 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B69 |
3.3 V |
1.4 mm |
9 mm |
Not Qualified |
33554432 bit |
2.67 V |
USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 512K X 16 OR 1M X 8 |
e0 |
12 mm |
90 ns |
|||||||||||||||||||||||||||||||||||
Toshiba |
COMMERCIAL |
32 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
50 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP32,.8,20 |
Other Memory ICs |
.5 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
Not Qualified |
1048576 bit |
e0 |
.0002 Amp |
100 ns |
|||||||||||||||||||||||||||||||||||||||||
Toshiba |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
MEMORY CIRCUIT |
OTHER |
48 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
1048576 words |
3 |
8 |
GRID ARRAY, LOW PROFILE |
1 mm |
85 Cel |
1MX8 |
1M |
-20 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1.6 mm |
10 mm |
Not Qualified |
8388608 bit |
2.7 V |
SRAM IS CONFIGURED AS 256 K X 8 |
e0 |
12 mm |
|||||||||||||||||||||||||||||||||||||||||
Toshiba |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
55 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G28 |
Not Qualified |
262144 bit |
e0 |
.0001 Amp |
85 ns |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
MEMORY CIRCUIT |
OTHER |
48 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
HYBRID |
BALL |
60 mA |
FLASH+SRAM |
3/3.3 |
GRID ARRAY |
BGA48,6X8,40 |
Other Memory ICs |
1 mm |
85 Cel |
-25 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B48 |
Not Qualified |
e0 |
.00003 Amp |
100 ns |
||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
VIDEO DRAM |
COMMERCIAL |
40 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
140 mA |
262144 words |
5 |
5 |
8 |
IN-LINE |
ZIP40,.1 |
Other Memory ICs |
1.27 mm |
70 Cel |
256KX8 |
256K |
0 Cel |
ZIG-ZAG |
R-PZIP-T40 |
Not Qualified |
2097152 bit |
.01 Amp |
80 ns |
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Toshiba |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
60 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.5 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
3 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
Not Qualified |
1048576 bit |
e0 |
.0001 Amp |
100 ns |
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Toshiba |
MEMORY CIRCUIT |
OTHER |
48 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
1048576 words |
3 |
16 |
GRID ARRAY, LOW PROFILE |
1 mm |
85 Cel |
1MX16 |
1M |
-20 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1.6 mm |
10 mm |
Not Qualified |
16777216 bit |
2.7 V |
SRAM IS CONFIGURED AS 256 K X 8 |
e0 |
14 mm |
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Toshiba |
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|
Toshiba |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
2/6 |
SMALL OUTLINE |
SOP16,.3 |
Other Memory ICs |
1.27 mm |
85 Cel |
-40 Cel |
DUAL |
R-PDSO-G16 |
Not Qualified |
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Toshiba |
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Toshiba |
VIDEO DRAM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
50 mA |
131072 words |
5 |
5 |
8 |
IN-LINE |
DIP40,.6 |
Other Memory ICs |
2.54 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T40 |
Not Qualified |
1048576 bit |
e0 |
.01 Amp |
100 ns |
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|
Toshiba |
OTHER |
69 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
55 mA |
8388608 words |
COMMON |
1.8,3 |
16 |
GRID ARRAY, FINE PITCH |
BGA69,10X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
3-STATE |
8MX16 |
8M |
-25 Cel |
BOTTOM |
R-PBGA-B69 |
Not Qualified |
134217728 bit |
.000003 Amp |
75 ns |
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Toshiba |
Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.
One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.
Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.
Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.