Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Sector Size (Words) | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Toggle Bit | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | No. of Sectors/Size | Command User Interface | Terminal Finish | I2C Control Byte | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Serial Bus Type | Boot Block | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | Page Size (words) | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Type | Maximum Standby Current | Interleaved Burst Length | Length | Common Flash Interface | Maximum Access Time | Programming Voltage (V) | Data Polling |
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Toshiba |
COMMERCIAL |
168 |
DIMM |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1000 mA |
2097152 words |
NO |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
2MX72 |
2M |
0 Cel |
DUAL |
R-PDMA-N168 |
25.4 mm |
Not Qualified |
150994944 bit |
.0145 Amp |
70 ns |
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Toshiba |
MEMORY CIRCUIT |
OTHER |
48 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
HYBRID |
BALL |
40 mA |
FLASH+SRAM |
3/3.3 |
GRID ARRAY |
BGA48,6X8,40 |
Other Memory ICs |
1 mm |
85 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B48 |
Not Qualified |
e0 |
.00003 Amp |
100 ns |
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Toshiba |
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Toshiba |
VIDEO DRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
262144 words |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ28,.44 |
Other Memory ICs |
1.27 mm |
70 Cel |
256KX4 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J28 |
Not Qualified |
1048576 bit |
e0 |
.01 Amp |
100 ns |
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Toshiba |
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Toshiba |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
VIDEO DRAM |
COMMERCIAL |
40 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
160 mA |
262144 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ40,.44 |
Other Memory ICs |
1.27 mm |
70 Cel |
256KX8 |
256K |
0 Cel |
DUAL |
R-PDSO-J40 |
Not Qualified |
2097152 bit |
.01 Amp |
70 ns |
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Toshiba |
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Toshiba |
VIDEO DRAM |
COMMERCIAL |
28 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
262144 words |
5 |
5 |
4 |
IN-LINE |
ZIP28,.1 |
Other Memory ICs |
1.27 mm |
70 Cel |
256KX4 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T28 |
Not Qualified |
1048576 bit |
e0 |
.01 Amp |
120 ns |
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Toshiba |
COMMERCIAL |
72 |
SIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
720 mA |
4194304 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
4MX36 |
4M |
0 Cel |
SINGLE |
R-PSMA-N72 |
17.78 mm |
Not Qualified |
150994944 bit |
.009 Amp |
70 ns |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
45 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
Other Memory ICs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
Not Qualified |
262144 bit |
e0 |
.0001 Amp |
100 ns |
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Toshiba |
MEMORY CIRCUIT |
OTHER |
48 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
40 mA |
262144 words |
3 |
FLASH+SRAM |
3/3.3 |
8 |
GRID ARRAY, LOW PROFILE |
BGA48,6X8,40 |
Other Memory ICs |
1 mm |
85 Cel |
256KX8 |
256K |
-20 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1.6 mm |
10 mm |
Not Qualified |
2097152 bit |
2.7 V |
e0 |
.00003 Amp |
14 mm |
100 ns |
|||||||||||||||||||||||||||||||||||
Toshiba |
VIDEO DRAM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
45 mA |
131072 words |
5 |
5 |
8 |
IN-LINE |
DIP40,.6 |
Other Memory ICs |
2.54 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T40 |
Not Qualified |
1048576 bit |
e0 |
.01 Amp |
120 ns |
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Toshiba |
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Toshiba |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
70 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
Not Qualified |
1048576 bit |
e0 |
.0002 Amp |
80 ns |
|||||||||||||||||||||||||||||||||||||||||
Toshiba |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
60 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.5 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
Not Qualified |
1048576 bit |
e0 |
.0002 Amp |
100 ns |
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Toshiba |
MEMORY CIRCUIT |
INDUSTRIAL |
5 |
DIE |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
32768 words |
1 |
UNCASED CHIP |
85 Cel |
32KX1 |
32K |
-40 Cel |
TIN LEAD |
UPPER |
R-XUUC-N5 |
5.5 V |
Not Qualified |
32768 bit |
2.7 V |
e0 |
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Toshiba |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
70 mA |
131072 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
Other Memory ICs |
2.54 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T32 |
Not Qualified |
1048576 bit |
e0 |
.0002 Amp |
80 ns |
|||||||||||||||||||||||||||||||||||||||||
Toshiba |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
55 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
Other Memory ICs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
Not Qualified |
262144 bit |
e0 |
.0001 Amp |
85 ns |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
60 mA |
131072 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
Other Memory ICs |
2.54 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T32 |
Not Qualified |
1048576 bit |
e0 |
.0002 Amp |
100 ns |
|||||||||||||||||||||||||||||||||||||||||
|
Toshiba |
INDUSTRIAL |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
2/6 |
IN-LINE |
DIP16,.3 |
Other Memory ICs |
2.54 mm |
85 Cel |
-40 Cel |
DUAL |
R-PDIP-T16 |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
VIDEO DRAM |
COMMERCIAL |
40 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
140 mA |
262144 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ40,.44 |
Other Memory ICs |
1.27 mm |
70 Cel |
256KX8 |
256K |
0 Cel |
DUAL |
R-PDSO-J40 |
Not Qualified |
2097152 bit |
.01 Amp |
80 ns |
|||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
45 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G28 |
Not Qualified |
262144 bit |
e0 |
.0001 Amp |
100 ns |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
MEMORY CIRCUIT |
OTHER |
48 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
40 mA |
2097152 words |
3 |
FLASH+SRAM |
3/3.3 |
8 |
GRID ARRAY, LOW PROFILE |
BGA48,6X8,40 |
Other Memory ICs |
1 mm |
85 Cel |
2MX8 |
2M |
-20 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1.6 mm |
10 mm |
Not Qualified |
16777216 bit |
2.7 V |
e0 |
.00003 Amp |
14 mm |
100 ns |
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Toshiba |
MEMORY CIRCUIT |
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Toshiba |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
VIDEO DRAM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
50 mA |
131072 words |
5 |
5 |
8 |
IN-LINE |
DIP40,.6 |
Other Memory ICs |
2.54 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T40 |
Not Qualified |
1048576 bit |
e0 |
.01 Amp |
100 ns |
|||||||||||||||||||||||||||||||||||||||||||
Toshiba |
MEMORY CIRCUIT |
OTHER |
48 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
1048576 words |
3 |
8 |
GRID ARRAY, LOW PROFILE |
1 mm |
85 Cel |
1MX8 |
1M |
-20 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1.6 mm |
10 mm |
Not Qualified |
8388608 bit |
2.7 V |
SRAM IS CONFIGURED AS 128 K X 8 |
e0 |
12 mm |
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Toshiba |
MEMORY CIRCUIT |
OTHER |
65 |
LFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
50 mA |
1048576 words |
3 |
FLASH+SRAM |
3/3.3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA65,10X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
1MX16 |
1M |
-20 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B65 |
3.6 V |
1.4 mm |
9 mm |
Not Qualified |
16777216 bit |
2.7 V |
SRAM IS ORGANISED AS 256K X 16 |
e0 |
12 mm |
100 ns |
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Toshiba |
VIDEO DRAM |
COMMERCIAL |
40 |
ZIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
160 mA |
262144 words |
5 |
5 |
8 |
IN-LINE |
ZIP40,.1 |
Other Memory ICs |
1.27 mm |
70 Cel |
256KX8 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T40 |
Not Qualified |
2097152 bit |
e0 |
.01 Amp |
70 ns |
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Toshiba |
MEMORY CIRCUIT |
OTHER |
65 |
LFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
50 mA |
1048576 words |
3 |
FLASH+SRAM |
3/3.3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA65,10X12,32 |
Other Memory ICs |
.8 mm |
85 Cel |
1MX16 |
1M |
-20 Cel |
BOTTOM |
R-PBGA-B65 |
3.6 V |
1.4 mm |
9 mm |
Not Qualified |
16777216 bit |
2.7 V |
SRAM IS ORGANISED AS 128K X 16 |
12 mm |
100 ns |
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Toshiba |
MEMORY CIRCUIT |
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Toshiba |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
COMMERCIAL |
32 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
70 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP32,.8,20 |
Other Memory ICs |
.5 mm |
70 Cel |
YES |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
Not Qualified |
1048576 bit |
e0 |
.0002 Amp |
80 ns |
||||||||||||||||||||||||||||||||||||||||
Toshiba |
MEMORY CIRCUIT |
OTHER |
48 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
40 mA |
524288 words |
3 |
FLASH+SRAM |
3/3.3 |
16 |
GRID ARRAY, LOW PROFILE |
BGA48,6X8,40 |
Other Memory ICs |
1 mm |
85 Cel |
512KX16 |
512K |
-20 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1.6 mm |
10 mm |
Not Qualified |
8388608 bit |
2.7 V |
SRAM IS ORGANISED AS 128K X 8; FLASH MEMORY IS ORGANISED AS 1M X 8 |
e0 |
.00003 Amp |
12 mm |
100 ns |
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Toshiba |
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Toshiba |
MEMORY CIRCUIT |
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
MEMORY CIRCUIT |
OTHER |
48 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
HYBRID |
BALL |
40 mA |
FLASH+SRAM |
3/3.3 |
GRID ARRAY |
BGA48,6X8,40 |
Other Memory ICs |
1 mm |
85 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B48 |
Not Qualified |
e0 |
.00003 Amp |
100 ns |
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|
Toshiba |
MEMORY CIRCUIT |
OTHER |
224 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
EEPROM+SDRAM |
1.8,3/3.3 |
GRID ARRAY, FINE PITCH |
BGA224,14X20,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-30 Cel |
BOTTOM |
R-PBGA-B224 |
Not Qualified |
.01 Amp |
35 ns |
||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
COMMERCIAL |
72 |
SIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
738 mA |
8388608 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
8MX36 |
8M |
0 Cel |
SINGLE |
R-PSMA-N72 |
29.21 mm |
Not Qualified |
301989888 bit |
.018 Amp |
70 ns |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1450 mA |
4194304 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
4MX72 |
4M |
0 Cel |
DUAL |
R-PDMA-N168 |
25.4 mm |
Not Qualified |
301989888 bit |
.019 Amp |
70 ns |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
MEMORY CIRCUIT |
OTHER |
48 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
40 mA |
2097152 words |
3 |
FLASH+SRAM |
3/3.3 |
8 |
GRID ARRAY, LOW PROFILE |
BGA48,6X8,40 |
Other Memory ICs |
1 mm |
85 Cel |
2MX8 |
2M |
-20 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1.6 mm |
10 mm |
Not Qualified |
16777216 bit |
2.7 V |
e0 |
.00003 Amp |
14 mm |
100 ns |
|||||||||||||||||||||||||||||||||||
Toshiba |
COMMERCIAL |
32 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
60 mA |
131072 words |
COMMON |
3/5 |
8 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP32,.8,20 |
Other Memory ICs |
.5 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
2.7 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
Not Qualified |
1048576 bit |
e0 |
.000025 Amp |
80 ns |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
70 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
Not Qualified |
1048576 bit |
e0 |
.0002 Amp |
80 ns |
|||||||||||||||||||||||||||||||||||||||||
Toshiba |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
20 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
IN-LINE |
DIP32,.6 |
Other Memory ICs |
2.54 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
3 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T32 |
Not Qualified |
1048576 bit |
e0 |
.0001 Amp |
80 ns |
Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.
One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.
Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.
Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.